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1. 发明专利

JPH0874031A PRODUCTION OF PHASE-SHIFT PHOTOMASK BLANK, PHASE-SHIFT PHOTOMASK BLANK AND PHASE-SHIFT PHOTOMASK 失效
公开(公告)号：JPH0874031A
公开(公告)日：1996-03-19
申请号：JP21479294
申请日：1994-09-08
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA MAE , SAITO YOSHIHIRO , YAMAMOTO TSUNEO , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , CHIBA AKIRA , MIYAZAKI JUNJI
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/68 , H01L21/027
摘要： PURPOSE: To provide a phase-shift photomask blank suitable to UV exposure and highly resistant to chemicals. CONSTITUTION: Gaseous nitrogen monoxide is added by 2.65-6vol.%, then a molybdenum silicide target is sputtered, and a molybdenum silicide oxynitride film is formed on a transparent substrate. This film is suitable to the phase-shift film in a KrF excimer laser wavelength and highly resistant to chemicals. Since the chemical resistance is especially improved when the proportion of the gaseoous nitrogen monoxide is low, the film is used as the protective film of the phase-shift film by adding 0.5-6vol.%. The process variation of the transmittance is reduced when the film is heat-treated at >=200 deg.C, and the transmittance is increased in the exposure wavelength.

2. 发明专利

JPH0831711A EXPOSURE METHOD USING ATTENUATION TYPE PHASE-SHIFT MASK 失效
公开(公告)号：JPH0831711A
公开(公告)日：1996-02-02
申请号：JP15841994
申请日：1994-07-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , G03F7/207 , H01L21/027 , G03F1/08
摘要： PURPOSE:To provide an exposure method using an attenuation type phase-shift mask capable of accurately exposing a specified pattern in the same process in all regions of a material to be exposed even when there is a stepped section in the material to be exposed. CONSTITUTION:The optimum value of the difference of a first distance h1 and a second distance h2 from the phase angle of exposure light transmitted through a second light transmission section 8 and a third light transmission section 10 and the hole size of the second light transmission section 8 and the third light transmission section 10. Accordingly, a resist film 14 can be exposured at the optimum place of a focus.

3. 发明专利

JPH07201700A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07201700A
公开(公告)日：1995-08-04
申请号：JP33710593
申请日：1993-12-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027
摘要： PURPOSE:To provide a method of manufacturing a semiconductor device capable of contriving to effectively performing a step of manufacturing a semiconductor device containing a reflection-preventing film. CONSTITUTION:This embodiment comprises a step of forming a wiring layer 4 composed of a metal material on a substrate 2; and a step of forming a reflection-preventing film 6 containing a compound having metal-silicon-oxygen using the same metal material as this wiring layer 4 on this wiring layer 4. Thus, the wiring layer 4 and reflection-preventing film 6 can be formed using the same device, and further the wiring layer 4 and reflection-preventing film 6 can be worked using the same etching material.

4. 发明专利

JPH0214512A RESIST REMOVAL APPARATUS FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0214512A
公开(公告)日：1990-01-18
申请号：JP16564588
申请日：1988-06-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA MASAYUKI , KAWAI AKIRA , MIYAZAKI JUNJI
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To reduce a defect of a pattern which is caused by a defect of a resist and by a dust particle and to enhance a yield of a product by adopting a constitution that a peripheral edge part of a wafer is immersed in a tank of a removal liquid. CONSTITUTION:A spin shaft 10 is arranged in a vertical direction by means of a driving shaft 13; a wafer 14 is fixed onto a vacuum chuck 11. Then, a resist 21 is dropped onto the wafer 14 from a resist discharge nozzle 20. Then, the shaft 10 is turned; the wafer 14 is set to a desired thickness. The number of revolutions is reduced; in succession, the shaft 10 is set in a horizontal direction by means of the driving shaft 13. Thereby, an outer peripheral edge of the wafer 14 can be immersed in a resist removal liquid 12a. On the other hand, a peripheral edge part of the wafer 14 which has been lifted from the resist removal liquid 12a can be dried immediately by N2 gas discharged from a nozzle 16. Accordingly, a problem that the resist removal liquid 12a drips to the central part of the resist 21 does not arise.

5. 发明专利

JPH01132123A METHOD FOR FORMING RESIST PATTERN 失效
公开(公告)号：JPH01132123A
公开(公告)日：1989-05-24
申请号：JP29134787
申请日：1987-11-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWAI AKIRA , KISHIMURA SHINJI , MIYAZAKI JUNJI , OGAWA SACHIKO
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To provide good resolution and prevent the thinning of the pattern width by forming an ion-implanted layer in the region of a flattened resist where a resist pattern is to be formed, and etching the flattened resist using the ion-implanted layer as a mask. CONSTITUTION:After applying a flattened resist 1 on a substrate 2, a patterning layer 6 is formed on the flattened resist 1, and the region where a resist pattern is to be formed is exposed. Then, by use of the patterning layer 6 as a mask, ions are implanted, so as to form an ion-implanted layer 8 in the region where the resist pattern is to be formed. Thereafter, the patterning layer 6 is removed, and by use of the ion-implanted layer 8 as a mask the flattened resist is etched, thereby forming a resist pattern 11 on the substrate 2. For instance, the ion implantation is of Si ions 7, and the concentration of the implantation is 10 ions/cm or more. The etching of the flattened resist 1 is performed by a O2 plasma reactive ion etching.

6. 发明专利

JPH0611825A PRODUCTION OF PHOTOMASK 失效
公开(公告)号：JPH0611825A
公开(公告)日：1994-01-21
申请号：JP3153493
申请日：1993-02-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI
IPC分类号： G03F1/28 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03F1/08
摘要： PURPOSE:To obtain the photomask which can dispose phase shift members always over the entire part of transfer patterns without troubles regardless of the shapes of the transfer patterns. CONSTITUTION:The phase shift member 13 is made into a multilayered lamination structure like first and second phase shift members 13A, 13B. The phase shift angles of light of the respective phase shift members 13A, 13B are so set as to be smaller than 180 deg. and to be 180 deg. in total. The end of the second phase shift member 13B on the upper side at the end E not adjacent to a light shielding member 12 projects to the outer side than the end of the first phase shift member 13A on the lower side and covers the top of a transparent substrate 11. The end of the second phase shift member 13B shown by a symbol E is tapered by executing a heat treatment. The high resolving power is obtd. by the principle of a phase shift method in the laminated part of the phase shift member 13 and the undesirable drop of the light intensity down to zero does not arise at the end E.

7. 发明专利

JPH04147142A PHOTOMASK AND ITS PRODUCTION 失效
公开(公告)号：JPH04147142A
公开(公告)日：1992-05-20
申请号：JP27263590
申请日：1990-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI , NAGATA KAZUSHI
IPC分类号： G03F1/28 , G03F1/34 , G03F1/68 , H01L21/027
摘要： PURPOSE:To perform a transfer with high resolution by setting the phase relation of a third phase region with respect to first and second phase regions so that a phase difference between the transmitting lights of the first and third phase regions and the second and third phase regions is the half of the phase difference between the transmitting lights of the first and second phase regions. CONSTITUTION:The first and second phase regions 15 and 16 are alternately arranged along line and row directions, so as to sandwich each of light shielding regions 2, and the third phase region 17 is arranged so as to be adjacent to these first and second regions 15 and 17. Then the phase relation is set so that the phase difference between first and second phase regions 15 and 16, and the third phase region 17 arranged so as to be adjacent to these first and second regions 15 and 17 is the half of the phase difference between the transmitting lights of the first and second phases 15 and 16. The attenuation action of light by an interference occurring on the boundary part of the third phase region 17 and the first and second phase regions 15 and 16, is weakened up to a degree the an influence is not given to the transfer of a pattern. Thus, the transfer can be performed with the high resolution.

8. 发明专利

JPH03261951A PHOTOMASK AND PRODUCTION THEREOF 失效
公开(公告)号：JPH03261951A
公开(公告)日：1991-11-21
申请号：JP5993090
申请日：1990-03-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI
IPC分类号： G03F1/29 , G03F1/70 , G03F1/80 , H01L21/027
摘要： PURPOSE:To allow transfer of transfer patterns with a high resolving power regardless of the shapes of the patterns by incorporating the phase parts formed of the parts where light shielding members are not provided at a prescribed width into a transparent substrate. CONSTITUTION:Protuberant parts 1a protuberated by a height D are selectively provided on the surface of the transparent substrate 1. The light shielding members 2 of the prescribed patterns are formed on the build-up parts 1a. The protuberant parts 1a of the transparent substrate 1 are formed larger by one size than the light shielding members 2 and project by the prescribed width W along the peripheral edge parts of the light shielding members 2. The projecting parts constitute the phase parts 3. A phase difference is, therefore, generated between the light which transmits the phase parts 3 of the transparent substrate 1 and the light which is not formed with the phase parts 3. The light rays spreading to the regions of the light shielding members 2 negate each other by interfering with each other. The transfer of the transfer patterns with the high resolving power is executed in this way regardless of the shape of the patterns.

9. 发明专利

JPH03261059A ION IMPLANTING DEVICE 失效
公开(公告)号：JPH03261059A
公开(公告)日：1991-11-20
申请号：JP5841090
申请日：1990-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHASHI TAKETO , OSAKI SABURO , MIYAZAKI JUNJI
IPC分类号： H01J37/08 , H01J37/317 , H01L21/265
摘要： PURPOSE:To improve uniformity of a quantity of ion implantation and prevent electrostatic breakdown of an insulating film by installing film for charge exchange in the middle of an ion beam route, and irradiating an ion beam having passed through this film to a semiconductor wafer. CONSTITUTION:A plurality of semiconductor wafers W are mounted on the disk 1 in an ion implantation chamber and rotatably operated at a high speed. An ion beam B passes through a metal film 6 arranged in the middle of its route and loses positive charge due to its charge exchange action so that it is neutralized and irradiates the wafer W. The current of the beam B is measured by an ammeter 7 connected to the film 6 to control a quantity of ion implantation.

10. 发明专利

JPH03172848A MANUFACTURE OF PHOTOMASK 失效
公开(公告)号：JPH03172848A
公开(公告)日：1991-07-26
申请号：JP31069589
申请日：1989-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI , NAGATA KAZUSHI
IPC分类号： G03F1/29 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To enable transfer high in resolution and precision irrespective of the form of pattern to be transferred by forming a light-shielding member specified in pattern on a transparent substrate, selectively etching parts free from the light-shielding member, then forming a transparent film on the whole surface, and anisotropically etching it. CONSTITUTION:After the light-shielding member 2 has been formed on the surface of the transparent substrate 1, the surface of the substrate 1 is etched to the prescribed depth d1, and the transparent film 4 is formed on the whole surface of the substrate 1. At that time, the film 4 is formed in a thickness of thicker than the other places by the sum of the thickness of the member 2 d2 and the etching depth d1 near the circumference 2a of the member 2. Then, all the film 4 is anisotropically etched until one of the member 2 or the substrate 1 is disclosed. The film 4 remains along the circumference 2a of the member 2 in a thickness of almost the same as the member 2, and the phase member 3 is selectively and self-matchingly formed, thus permitting the light intensity distribution of the projected image of the photomask to be sharpened and high resolution to be obtained.

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