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1. 发明专利

JP2010232499A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010232499A
公开(公告)日：2010-10-14
申请号：JP2009079633
申请日：2009-03-27
申请人： Tohoku Univ , Toshiba Corp , 国立大学法人東北大学 , 株式会社東芝
发明人： NISHIYAMA KATSUYA , FENG WU , MIZUKAMI NARUMI , MIYAZAKI TERUNOBU , YODA HIROAKI , KAI TADASHI , KISHI TATSUYA , WATANABE DAISUKE , OKANE MIKIHIKO , ANDO YASUO , YOSHIKAWA MASATOSHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , DAIBO TADAOMI , NAGAMINE MAKOTO
IPC分类号： H01L43/08 , H01F10/12 , H01F10/28 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element for a spin injection writing system which is stable to heat, and makes low-current magnetization inversion possible, and a magnetic memory using the element. SOLUTION: The magnetoresistive element includes a base layer 12, a first magnetic layer 13 whose magnetization direction is variable, and which has an axis of easy magnetization in a direction perpendicular to a film surface formed on the base layer, a first nonmagnetic layer 15 formed on the first magnetic layer, a second magnetic layer 17 whose direction of magnetization is fixed, and which has the axis of easy magnetization in a direction perpendicular to the film surface formed on the first nonmagnetic layer where the first magnetic layer contains a ferrimagnetic body layer in which a c-axis faces a direction perpendicular to the film surface, and which has a DO 22 structure or an L1 0 structure, and where the magnetization direction of the first magnetic layer becomes variable by a bidirectional current penetrating the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种对热稳定并使低电流磁化反转成为可能的自旋注入写入系统的磁阻元件和使用该元件的磁存储器。解决方案：磁阻元件包括基极层12，其磁化方向可变的第一磁性层13，其在垂直于形成在基底层上的膜表面的方向上具有容易磁化的轴，第一非磁性形成在第一磁性层上的层15，其磁化方向固定的第二磁性层17，并且在垂直于形成在第一非磁性层上的膜表面的方向上具有容易磁化的轴，其中第一磁性层含有亚铁磁体层，其中c轴面向与膜表面垂直的方向，并且具有DO 22 结构或L1 0 结构，并且其中磁化方向第一磁性层通过穿透第一磁性层，第一非磁性层和第二磁性层的双向电流而变化。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2014179447A Magnetic memory element 审中-公开
标题翻译：磁记忆元件
公开(公告)号：JP2014179447A
公开(公告)日：2014-09-25
申请号：JP2013052170
申请日：2013-03-14
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KISHI TATSUYA , TOKO MASARU , MURAYAMA AKIYUKI , HASHIMOTO YUTAKA , AIKAWA HISANORI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To secure a sufficient thermal disturbance constant even when a magnetic layer is minimized.SOLUTION: A magnetic memory element 10 comprises: a memory layer 12 having magnetic anisotropy in a direction perpendicular to a film surface and in which the magnetization direction is variable; a reference layer 14 having magnetic anisotropy in a direction perpendicular to the film surface and in which the magnetization direction is not variable; and a tunnel barrier layer 13 interposed between the memory layer 12 and the reference layer 14. The memory layer 12 is made from cobalt (Co) and iron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer 12.
摘要翻译：要解决的问题：即使当磁性层最小时也能确保足够的热扰动常数。解决方案：磁存储元件10包括：在垂直于膜表面的方向上具有磁各向异性的存储层12，其中磁化方向是可变的在垂直于膜表面的方向上具有磁各向异性且其磁化方向不变的参考层14; 以及介于存储层12和参考层14之间的隧道势垒层13.存储层12由钴（Co）和铁（Fe）制成。多个氧原子存在于存储层12的两个界面上。

3. 发明专利

JP2013251336A Magnetic storage element and manufacturing method of magnetic memory 审中-公开
标题翻译：磁记忆的磁性储存元件和制造方法
公开(公告)号：JP2013251336A
公开(公告)日：2013-12-12
申请号：JP2012123440
申请日：2012-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , AIKAWA HISANORI , TOKO MASARU , YODA HIROAKI , KISHI TATSUYA , IKEGAWA SUMIO
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
CPC分类号： H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To maintain the magnetization state of a magnetic storage element even when the magnetic storage element underwent a reflow process.SOLUTION: A magnetic storage element 20 includes: a storage layer 30; a first non-magnetic layer 31 provided adjacent to the storage layer 30; a reference layer 32 provided adjacent to the first non-magnetic layer 31 and including a ferrimagnetic material; a second non-magnetic layer 33 provided adjacent to the reference layer 32; and an adjustment layer 34 provided adjacent to the second non-magnetic layer 33. A manufacturing method of a magnetic memory 11 including the magnetic storage element 20 includes the steps of: packaging the magnetic memory 11 and forming a memory package 10; and joining the memory package 10 to a substrate 18 by reflow soldering. A reflow temperature in the reflow process is set to a temperature that is equal to or higher than a compensation temperature of the reference layer 32 and is equal to or lower than Neel temperature.
摘要翻译：要解决的问题：即使当磁存储元件经受回流处理时，也能保持磁存储元件的磁化状态。解决方案：磁存储元件20包括：存储层30; 与存储层30相邻设置的第一非磁性层31; 设置在第一非磁性层31附近并包括铁磁材料的参考层32; 与参考层32相邻设置的第二非磁性层33; 以及与第二非磁性层33相邻设置的调整层34.包括磁性存储元件20的磁性存储器11的制造方法包括以下步骤：包装磁性存储器11并形成存储器组件10; 并通过回流焊接将存储器封装10连接到衬底18。回流处理中的回流温度设定为等于或高于参考层32的补偿温度并且等于或低于Neel温度的温度。

4. 发明专利

JP2013247198A Magnetoresistive element and method for manufacturing the same 审中-公开
标题翻译：磁性元件及其制造方法
公开(公告)号：JP2013247198A
公开(公告)日：2013-12-09
申请号：JP2012118842
申请日：2012-05-24
申请人： Toshiba Corp , 株式会社東芝
发明人： MURAYAMA AKIYUKI , NAKAYAMA MASAHIKO , SEDO SATOSHI , KISHI TATSUYA , TOKO MASARU
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , H01L43/02
摘要： PROBLEM TO BE SOLVED: To prevent a short circuit between magnetic layers, as well as deterioration in magnetic characteristics of the magnetic layers.SOLUTION: A magnetoresistive element includes: a magnetic layer 12, an insulation layer 13 and a magnetic layer 14 which are laminated on a substrate electrode 11; and a re-adhering substance 16 formed on the side walls of the magnetic layers 12 and 14 in processing the magnetic layers 12 and 14. At least one element selected from the group consisting of He, C, F, Ne, Si, P, S, Cl, Ar, Ge, As, Kr and Sb is injected in the re-adhering substance 16 and end parts in the in-plane direction of the magnetic layers 12 and 14.
摘要翻译：要解决的问题：防止磁性层之间的短路，以及磁性层的磁特性的恶化。解决方案：磁阻元件包括：层压的磁性层12，绝缘层13和磁性层14 在基板电极11上; 以及在处理磁性层12和14时形成在磁性层12和14的侧壁上的再粘附物质16.至少一种选自He，C，F，Ne，Si，P，将S，Cl，Ar，Ge，As，Kr和Sb注入到再粘合物质16和磁性层12,14的面内方向的端部。

5. 发明专利

JP2013069862A Magnetoresistance effect element 审中-公开
标题翻译：磁阻效应元素
公开(公告)号：JP2013069862A
公开(公告)日：2013-04-18
申请号：JP2011207323
申请日：2011-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： MURAYAMA AKIYUKI , IKEGAWA SUMIO , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To inhibit malfunction of a magnetic memory.SOLUTION: A magnetoresistance effect element of an element comprises: a storage layer having perpendicular magnetic anisotropy and a variable magnetization direction; a reference layer having perpendicular magnetic anisotropy and an invariable magnetization direction; a non-magnetic layer 11 between the storage layer and the reference layer; and a shift adjustment layer having an invariable magnetization direction. The reference layer includes a first temperature dependence LM1 of magnetization and the shift adjustment layer includes a second temperature dependence LM2 of magnetization different from that of the reference layer. A leak field of the reference layer and a leak field of the shift adjustment layer are cancelled with each other under a memory operation temperature. A shift magnetic field caused by one of a leak field of the reference layer and a leak field of the shift adjustment layer is applied to magnetization of the storage layer under a mounting temperature.
摘要翻译：要解决的问题：抑制磁存储器的故障。解决方案：元件的磁阻效应元件包括：具有垂直磁各向异性和可变磁化方向的存储层; 具有垂直磁各向异性和不变磁化方向的参考层; 存储层和参考层之间的非磁性层11; 以及具有不变磁化方向的移位调整层。参考层包括磁化的第一温度依赖性LM1，移位调整层包括不同于参考层的磁化的第二温度依赖性LM2。参考层的泄漏场和位移调整层的泄漏场在存储器操作温度下相互抵消。在安装温度下，对存储层的磁化施加由参考层的泄漏场和移动调整层的泄漏场中的一个引起的移动磁场。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012094894A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012094894A
公开(公告)日：2012-05-17
申请号：JP2011286353
申请日：2011-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a leakage field applied to a memory layer as much as possible.SOLUTION: A magnetoresistance effect element comprises a ferromagnetic layer 10 having magnetic anisotropy in the direction perpendicular to the film surface, a first nonmagnetic layer 8 provided on the ferromagnetic layer, a reference layer 6 provided on the first nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, magnetization anti-parallel with the direction of magnetization of the ferromagnetic layer and a film thickness equal to 1/2.8-1/1.5 that of the ferromagnetic layer in the lamination direction, a second nonmagnetic layer 8 provided on the reference layer, and a memory layer 2 provided on the second nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, and direction of magnetization which changes by action of spin-polarized electrons.
摘要翻译：要解决的问题：尽可能减少施加到存储器层的泄漏场。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的铁磁层10，设置在铁磁层上的第一非磁性层8，设置在第一非磁性层上并具有磁性的参考层6 在垂直于膜表面的方向上的各向异性，与铁磁层的磁化方向平行的磁化强度和层叠方向上的铁磁层的磁化强度等于1 / 2.8-1 / 1.5的膜厚度，第二非磁性层 8，以及设置在第二非磁性层上并且在垂直于膜表面的方向上具有磁各向异性的存储层2以及由自旋极化电子的作用而改变的磁化方向。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2010080733A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010080733A
公开(公告)日：2010-04-08
申请号：JP2008248418
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To allow the reduction of an inversion current upon magnetization inversion of a recording layer. SOLUTION: A magnetoresistive element includes: a piezoelectric layer 11 wherein a lattice expands/contracts due to application of a voltage; a recording later 12 which is formed on the piezoelectric layer and has a magnetic anisotropy in a direction perpendicular to a layer surface and changes the direction of magnetization by action of spin-polarized electrons; a first nonmagnetic layer 13 provided on the recording layer, and a reference layer 14 which is provided on the first nonmagnetic layer and has a magnetic anisotropy in a direction perpendicular to the layer surface. A thermal disturbance resistance of the recording layer upon voltage application for reading is higher than that upon voltage application for writing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：允许在记录层的磁化反转时减小反转电流。解决方案：磁阻元件包括：压电层11，其中晶格由于施加电压而膨胀/收缩; 在压电层上形成的记录物12，在垂直于层面的方向上具有磁各向异性，并通过自旋极化电子的作用改变磁化方向; 设置在记录层上的第一非磁性层13和设置在第一非磁性层上并且在垂直于层表面的方向上具有磁各向异性的参考层14。电压施加时的记录层的热干扰电阻高于写入用电压时的耐热干扰性。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009081216A Magnetoresistance effect element and magnetic random access memory using the same 有权
标题翻译： MAGNETORESISTANCE效应元件和磁性随机存取存储器使用它
公开(公告)号：JP2009081216A
公开(公告)日：2009-04-16
申请号：JP2007248251
申请日：2007-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KITAGAWA EIJI , DAIBO TADAOMI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a low-resistance magnetoresistance effect type element of a spin-injection writing system.
SOLUTION: A crystallization promoting film is formed to promote crystallization in contact with an interfacial magnetic film having an amorphous structure, thus promoting crystallization from the side of a tunnel barrier layer, and adjusting the interface between the tunnel barrier layer and the interfacial magnetic film layer. With this arrangement, it is possible to obtain the magnetoresistance effect element that has low resistance so as to obtain a desired current value, and has a high TMR ratio.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供自旋注入书写系统的低电阻磁阻效应型元件。解决方案：形成结晶促进膜以促进与具有无定形结构的界面磁性膜接触的结晶，从而促进从隧道势垒层侧的结晶，并调节隧道势垒层与界面之间的界面磁膜层。通过这种布置，可以获得具有低电阻以获得期望电流值并且具有高TMR比的磁阻效应元件。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008252037A Magnetoresistive element, and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008252037A
公开(公告)日：2008-10-16
申请号：JP2007094887
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To further reduce a writing current required for magnetization reversal. SOLUTION: A magnetoresistive element 10 is provided with a fixed layer 11 having a fixed magnetization direction; a free layer 13 having a magnetization direction variable due to energization in a direction perpendicular to a film surface; an assisting layer 15 having a magnetization direction variable due to energization in a direction perpendicular to the film surface, and assisting a change in magnetization direction of the free layer 13; an intermediate layer 12 provided between the fixed layer 11 and the free layer 13 and made of a non-magnetic body; and an intermediate layer 14 provided between the free layer 13 and the assisting layer 15 and made of a non-magnetic body. An energy barrier for magnetization reversal of the assisting layer 15 is smaller than an energy barrier for magnetization reversal of the free layer 13. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：进一步减少磁化反转所需的写入电流。解决方案：磁阻元件10设置有具有固定的磁化方向的固定层11; 自由层13，由于在与膜表面垂直的方向上通电而具有可变化的磁化方向; 辅助层15由于在垂直于膜表面的方向通电而具有可变化的磁化方向，并辅助自由层13的磁化方向的变化; 设置在固定层11和自由层13之间并由非磁性体制成的中间层12; 以及设置在自由层13和辅助层15之间并由非磁性体制成的中间层14。辅助层15的磁化反转的能量势垒小于自由层13的磁化反转的能量势垒。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008085170A Magnetoresistance effect-type element and magnetoresistance effect-type random access memory 有权
标题翻译：磁阻效应类型元素和磁阻效应类型随机访问存储器
公开(公告)号：JP2008085170A
公开(公告)日：2008-04-10
申请号：JP2006265201
申请日：2006-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KAI TADASHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F41/307 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect-type element capable of having a high TMR ratio by a low area resistance (RA) and capable of performing the writing with a low current. SOLUTION: This element contains a laminated film comprising: a magnetization free layer 6 having a magnetic layer in which the orientation of the magnetization is variable; a magnetization fixed layer 2 having a magnetic layer in which the orientation of the magnetization is fixed; an inter layer 4 provided between the magnetization free layer 6 and the magnetization fixed layer 2, wherein the inter layer 4 comprises: an oxide containing an element selected from Ca, Mg, Sr, Ba, Ti and Sc, and B; and by applying the current in the both direction to the magnetization free layer and magnetization fixed layer between which the inter layer is interposed, the inversion of the magnetization in the magnetization free layer 6 is possible. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过低面积电阻（RA）具有高TMR比并且能够以低电流执行写入的磁阻效应型元件。解决方案：该元件包含层压膜，包括：具有磁化层的磁化层的磁化自由层6，其中磁化的取向可变; 具有固定磁化取向的磁性层的磁化固定层2; 设置在磁化自由层6和磁化固定层2之间的中间层4，其中层间4包括：含有选自Ca，Mg，Sr，Ba，Ti和Sc的元素的氧化物，以及B; 并且通过将电流在两个方向上施加到其间插入的磁化自由层和磁化固定层，磁化自由层6中的磁化的反转是可能的。版权所有（C）2008，JPO＆INPIT

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