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1. 发明专利

JP2014070245A Method for treating substrate carrying catalyst particles for plating treatment 有权
标题翻译：用于处理用于镀层处理的载体催化剂颗粒的方法
公开(公告)号：JP2014070245A
公开(公告)日：2014-04-21
申请号：JP2012216580
申请日：2012-09-28
申请人： Tanaka Kikinzoku Kogyo Kk , 田中貴金属工業株式会社 , Kansai Univ , 学校法人関西大学
发明人： NAKAMURA NORIAKI , YANAI JUNICHI , KUBO HITOSHI , OSHIMA YUSUKE , ISHIKAWA TOMOKO , NIIMIYABARA SHOZO , INOUE FUMIHIRO
IPC分类号： C23C18/16 , B01J23/44 , B01J37/02 , C23C18/18
CPC分类号： H05K3/422 , C23C18/1893 , C23C18/208 , C23C18/2086 , C23C18/30 , C23C18/34 , H05K3/387 , H05K3/389 , H05K3/426
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating method for carrying metal micro-particles to form a plated layer on a circuit pattern or a TSV in various substrates so that finer treatment than the prior art can be made to form a stable plated layer.SOLUTION: A substrate treating method for bringing a substrate and a colloidal solution containing metal particles into contact so as to carry metal particles to become a catalyst for forming a plated layer on the substrate, wherein the colloidal solution contains metal particles of Pd having a particle diameter of 0.6 nm to 4.0 nm, an interface distance of a (111) plane of 2.254 Å or more. This substrate surface before treated is enabled to enhance the binding power of Pd particles by forming an organic layer such as SAM.
摘要翻译：要解决的问题：提供一种用于承载金属微粒以在各种基板上的电路图案或TSV上形成镀层的基板处理方法，从而可以制造比现有技术更精细的处理以形成稳定的镀层。解决方案：一种基板处理方法，用于使基板和含有金属颗粒的胶体溶液接触以携带金属颗粒，以成为在基板上形成镀层的催化剂，其中胶体溶液含有具有颗粒的Pd的金属颗粒直径为0.6nm至4.0nm，（111）面的界面距离为2.254以上。处理前的该基板表面能够通过形成诸如SAM的有机层来增强Pd颗粒的结合力。

2. 发明专利

JP2012216722A Substrate intermediate, substrate and through via electrode formation method 有权
标题翻译：基板中间层，基板和通过电极形成方法
公开(公告)号：JP2012216722A
公开(公告)日：2012-11-08
申请号：JP2011082084
申请日：2011-04-01
申请人： Kansai Univ , Tanaka Kikinzoku Kogyo Kk , 学校法人関西大学 , 田中貴金属工業株式会社
发明人： NIIMIYABARA SHOZO , INOUE FUMIHIRO , YANAI JUNICHI , NAKAMURA NORIAKI
IPC分类号： H01L21/3205 , C23C18/28 , C23C18/34 , H01L21/288 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To manufacture a barrier layer uniformly with a high adhesion not at a high treatment temperature and at low cost when forming a through via electrode.SOLUTION: A through via electrode formation method comprises: forming a self-assembled monomolecular film 24 on an inner peripheral surface of a through via electrode formation hole 12 having a high aspect ratio and formed in a thickness direction of a silicon substrate 10; making the self-assembled monomolecular film absorb metal nanoparticles 14 in a high density to form a barrier layer by electroless plating by using the metal nanoparticles 14 as a catalyst; forming a seed layer on the barrier layer by electroless plating; and subsequently depositing a through via electrode material by electrolytic plating to fill the hole 12 to form a through via electrode.
摘要翻译：要解决的问题：在形成通孔电极时，以高处理温度和低成本地以高粘合力均匀地制造阻挡层。解决方案：通孔形成方法包括：在具有高纵横比的通孔电极形成孔12的内周面上形成自组装单分子膜24，并在硅衬底10的厚度方向上形成 ; 使得自组装单分子膜以高密度吸收金属纳米粒子14，通过使用金属纳米粒子14作为催化剂，通过化学镀来形成阻挡层; 通过化学镀在阻挡层上形成种子层; 随后通过电解电镀沉积通孔电极材料以填充孔12以形成通孔电极。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2014208395A 微小構造体、電子素子、及び微小構造体の製造方法审中-公开
标题翻译：微结构，电子元件和微结构的生产方法
公开(公告)号：JP2014208395A
公开(公告)日：2014-11-06
申请号：JP2014062638
申请日：2014-03-25
申请人：学校法人関西大学 , Kansai Univ , 学校法人関西大学
发明人： NIIMIYABARA SHOZO , SHIMIZU TOSHIHIRO , TADA YOSHIHIRO
IPC分类号： B82B1/00 , B81B1/00 , B82B3/00 , B82Y30/00 , B82Y40/00 , C25D5/00 , H01M4/134 , H01M4/1395 , H01M4/38
CPC分类号： Y02P70/54
摘要：【課題】単位体積あたり十分な表面積を有する微小構造体などを提供することを課題とする。【解決手段】基材の表面に形成され金属を含む微小構造体であって、一端が前記基材側に配され他端側へ向かうほど前記基材から離れるように配された第一棒状部と、該第一棒状部の一部から延びる第二棒状部とを備えていることを特徴とする微小構造体などを提供する。【選択図】図4
摘要翻译：要解决的问题：提供具有足够的每单位体积的表面积的微结构。解决方案：在基板的表面上形成微结构并且包括金属，并且设置有第一棒状部分，其中一个端部设置在基板的侧面，并且与另一端的侧面更接近地从基板分离，以及从第一杆状部分的一部分延伸的第二杆状部分。

4. 发明专利

JP2010058185A Array of autonomic responsive gel and production method of the same, and autonomic responsive material and production method of the same 有权
标题翻译：自动响应凝胶的阵列及其生产方法及其自动响应材料及其生产方法
公开(公告)号：JP2010058185A
公开(公告)日：2010-03-18
申请号：JP2008224157
申请日：2008-09-01
申请人： Kansai Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人関西大学 , 株式会社豊田中央研究所
发明人： KATO NAOHIKO , MOTOHIRO TOMOMI , NIIMIYABARA SHOZO , MANABE AKIRA
IPC分类号： B82B1/00 , B82B3/00 , C25D11/20
摘要： PROBLEM TO BE SOLVED: To provide an array of autonomic responsive gel in a nanometer unit and a production method of the array, and to provide an autonomic responsive material in a nanometer unit and a production method of the material.
SOLUTION: The array of autonomic responsive gel includes a porous anodized alumina and autonomic responsive gel present in the pores of the anodized alumina. The autonomic responsive material comprises an array of autonomic responsive gel using the porous anodized alumina used as a template and a fixation base, and a reaction matrix transmitting reaction diffusion.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供纳米单位的自主响应凝胶阵列和阵列的制备方法，并提供纳米单位的自主应答材料和材料的制备方法。解决方案：自主响应凝胶的阵列包括存在于阳极化氧化铝孔中的多孔阳极氧化铝和自发响应凝胶。自主响应材料包括使用用作模板的多孔阳极氧化的氧化铝和固定基的自主响应凝胶的阵列，以及透射反应扩散的反应基体。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012104611A Giant magnetoresistive element and method for manufacturing the same 审中-公开
标题翻译：大容量元件及其制造方法
公开(公告)号：JP2012104611A
公开(公告)日：2012-05-31
申请号：JP2010251196
申请日：2010-11-09
申请人： Kansai Univ , 学校法人関西大学
发明人： NIIMIYABARA SHOZO , SHIMIZU TOSHIHIRO , SHIOTANI YUICHI
IPC分类号： H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a giant magnetoresistive element which is capable of achieving a higher magnetoresistance ratio, and to provide a method for manufacturing the same.SOLUTION: A method for manufacturing a giant magnetoresistive element comprises the steps of: forming an insulating film with a thickness of 1 nm to 1 μm inclusive between a first electrode and a second electrode; and applying a predetermined voltage between the first electrode and the second electrode. At least one of the first electrode and the second electrode is formed of a magnetic material.
摘要翻译：要解决的问题：提供能够实现更高磁阻比的巨磁电阻元件，并提供其制造方法。解决方案：制造巨磁阻元件的方法包括以下步骤：在第一电极和第二电极之间形成厚度为1nm至1μm的绝缘膜; 以及在所述第一电极和所述第二电极之间施加预定的电压。第一电极和第二电极中的至少一个由磁性材料形成。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011068954A Electroless copper-plating solution, electroless copper-plating method, and method for forming of embedded wiring 有权
标题翻译：电镀铜溶液，电镀铜方法及嵌入式接线方法
公开(公告)号：JP2011068954A
公开(公告)日：2011-04-07
申请号：JP2009220867
申请日：2009-09-25
申请人： Kansai Univ , 学校法人関西大学
发明人： NIIMIYABARA SHOZO , INOUE FUMIHIRO
IPC分类号： C23C18/40 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/76898 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electroless copper-plating solution which can form an electroless copper-plated layer that is uniform even into the bottom of the hole regardless of the size of the inner diameter of the hole, an electroless copper-plating method, and a method for forming an embedded wiring, which can form reliable embedded wiring in the inner part of the hole by forming the electroless-copper-plated layer. SOLUTION: The electroless copper-plating solution contains a polyethylene glycol compound having a thiol group or a disulfide bond, and copper ions. Further, the electroless copper-plating method is characterized in that a substrate 1 with a hole 2 formed is dipped into the electroless copper-plating solution to form an electroless-copper-plated layer 6 at the inside of the hole. Further, the method for forming of embedded wiring is characterized in the substrate 1 with the hole 2 formed is dipped into the electroless copper-plating solution to form embedded wiring made of the electroless-copper-plated layer 6 at the inside of the hole. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种化学镀铜溶液，其可以形成即使进入孔的底部均匀均匀的无电镀铜层，而与孔的内径大小无关，化学镀铜并且通过形成无电镀铜层，可以在孔的内部形成可靠的嵌入布线，从而形成嵌入布线的方法。解决方案：化学镀铜溶液含有具有硫醇基或二硫键的聚乙二醇化合物和铜离子。此外，无电镀铜法的特征在于，将形成有孔2的基板1浸入无电镀铜溶液中，以在孔的内部形成化学镀铜层6。此外，嵌入布线的形成方法的特征在于，将形成有孔2的基板1浸入无电镀铜溶液中，以在孔的内部形成由无电解镀铜层6制成的嵌入布线。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2014044988A Resistance change type memory and preparing method therefor 审中-公开
标题翻译：电阻变化型存储器及其制备方法
公开(公告)号：JP2014044988A
公开(公告)日：2014-03-13
申请号：JP2012185077
申请日：2012-08-24
申请人： Kansai Univ , 学校法人関西大学
发明人： SHIMIZU TOSHIHIRO , NIIMIYABARA SHOZO
IPC分类号： H01L27/105 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a resistance change type memory and a preparing method therefore, in which preparation efficiency can be enhanced and in which high integration can be easily achieved.SOLUTION: A resistance change type memory includes: a long-shaped bit line; a long-shaped word line intersecting with the bit line; and an insulation layer interposed between the bit line and the word line. The insulation layer covers the peripheral surface of the word line at a position where the bit line and the word line are intersected with each other.
摘要翻译：要解决的问题：提供一种电阻变化型存储器及其制备方法，其中可以提高制备效率，并且可以容易地实现高集成度。解决方案：电阻变化型存储器包括：长形位线 ; 与位线相交的长字形字线; 以及插入在位线和字线之间的绝缘层。绝缘层在位线和字线彼此相交的位置处覆盖字线的外围表面。

8. 发明专利

JP2010222465A Array of autonomously responding gel, autonomously responding material, autonomously responding device, autonomously responding method and method for producing array of autonomously responding gel 有权
标题翻译：自动响应凝胶的阵列，自动响应材料，自动响应装置，自动响应方法和自动响应凝胶阵列的方法
公开(公告)号：JP2010222465A
公开(公告)日：2010-10-07
申请号：JP2009070922
申请日：2009-03-23
申请人： Kansai Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人関西大学 , 株式会社豊田中央研究所
发明人： KATO NAOHIKO , MOTOHIRO TOMOMI , NIIMIYABARA SHOZO , SHIRAKI YUSUKE , MANABE AKIRA
IPC分类号： C08F220/54 , B81B1/00 , C07F15/00 , C08F230/04
摘要： PROBLEM TO BE SOLVED: To provide an array of an autonomously responding gel autonomously responding by external stimulation, an autonomously responding material and a method for producing the array of the autonomously responding gel, and to provide an autonomously responding device to control autonomous response of the array of the autonomously responding gel by electric potential and an autonomously responding method. SOLUTION: The array of the autonomously responding gel has a plurality of protrusions formed of the autonomously responding gel and having a diameter of 1-1,000 μm and an axial height of 20-400 μm and an autonomously responding gel layer formed of the autonomously responding gel same as the material of the protrusions and connected with the protrusion at a part of the axial direction of the protrusion. The autonomously responding material contains a reaction substrate filled in spaces of the autonomously responding gel array. The array of the autonomously responding gel is produced by ultraviolet irradiation through a photomask. The autonomous response of the autonomously responding material is controlled by application of electric potential to the autonomously responding gel. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过外部刺激自主响应的自主响应凝胶的阵列，自主应答材料和用于产生自主响应凝胶阵列的方法，并提供自主响应的装置来控制自主通过电位对自发响应的凝胶阵列的响应和自主响应的方法。解决方案：自主响应的凝胶的阵列具有由自主响应的凝胶形成的多个突起，其直径为1-1000μm，轴向高度为20-400μm，并且自发响应的凝胶层由自主响应的凝胶与突起的材料相同，并且在突起的轴向的一部分处与突起连接。自主响应的材料包含填充在自主响应的凝胶阵列的空间中的反应基板。自发响应凝胶的阵列通过光掩模的紫外线照射产生。自主响应材料的自主反应是通过将电位施加到自主响应的凝胶来控制的。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010185113A Electroless copper-plating solution, electroless copper-plating method and method for forming embedded wiring 有权
标题翻译：电镀铜溶液，电镀铜方法及嵌入式布线方法
公开(公告)号：JP2010185113A
公开(公告)日：2010-08-26
申请号：JP2009030440
申请日：2009-02-12
申请人： Kansai Univ , 学校法人関西大学
发明人： NIIMIYABARA SHOZO , INOUE FUMIHIRO
IPC分类号： C23C18/40 , C23C18/16 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L23/52 , H05K3/40
摘要： PROBLEM TO BE SOLVED: To provide an electroless copper-plating solution which can form an electroless-copper-plated layer that is uniform even into the bottom of the hole regardless of the size of the inner diameter of the hole, an electroless copper-plating method, and a method for forming an embedded wiring, which can form reliable embedded wiring in the inner part of the hole by forming such an electroless-copper-plated layer.
SOLUTION: This electroless copper-plating method includes using the electroless copper-plating solution which contains 1-15 ppm chlorine ions. The plating solution also further contains 50-2,000 molecular weight of a sulfur-based organic compound such as bis-(3-sulfopropyl) disulfide, for example.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种化学镀铜溶液，其可以形成即使进入孔的底部均匀均匀的无电镀铜层，而不管孔的内径如何，化学镀铜电镀法和嵌入布线的形成方法，通过形成这种无电镀铜层，能够在孔的内部形成可靠的嵌入布线。解决方案：该无电镀铜方法包括使用含有1-15ppm氯离子的无电镀铜溶液。电镀液还含有50-2000分子量的硫基有机化合物，例如双（3-磺丙基）二硫化物。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010040965A Nanowire structure, nanowire aggregate, and manufacturing method therefor 有权
标题翻译：纳米结构，纳米复合材料及其制造方法
公开(公告)号：JP2010040965A
公开(公告)日：2010-02-18
申请号：JP2008205198
申请日：2008-08-08
申请人： Kansai Univ , 学校法人関西大学
发明人： NIIMIYABARA SHOZO , OYA YUICHI
IPC分类号： H01L21/3205 , B82B1/00 , B82B3/00 , H01L21/288 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a micro wiring structure which connects nanowires in a desired arrangement through the use of a self-assembly formation method. SOLUTION: A nanowire structure used for a micro wiring includes: a nanowire comprising a material selected from a metal material that does not contain gold and a semiconductor material and including end faces on both ends thereof; and gold layers formed on the end faces. Furthermore, the nanowire structure includes a DNA connected to the gold layer via a thiol radical. COPYRIGHT: (C)2010,JPO&INPIT

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