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1. 发明专利

JPH0722339A FORMATION OF THIN FILM 失效
公开(公告)号：JPH0722339A
公开(公告)日：1995-01-24
申请号：JP16564493
申请日：1993-07-05
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , HIMORI SHINJI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/205 , C23C16/04 , C23C16/34 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PURPOSE:To provide a method of forming a thin film, which is capable of performing a film formation of a high directional property even if a groove formed in the surface of a semiconductor substrate is formed into a tapered form in a high aspect ratio. CONSTITUTION:A method of forming a thin film is performed in a constitution having a process, in which the interior of a film-forming chamber, wherein a semiconductor substrate 1 with a groove formed in its surface is housed, is evacuated at a pressure of 10 Torr or lower and thereafter, TiCl4, hydrogen, nitrogen and NF3 gas are introduced in the film-forming chamber, then, a process, in which these gases are brought into a plasma state to form selectively a TiN thin film 2 excepting the sidewall part of the groove.

2. 发明专利

JPH07302786A APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH07302786A
公开(公告)日：1995-11-14
申请号：JP11358794
申请日：1994-04-28
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , NAITO YUKIO , NAGASEKI KAZUYA , HIROSE KEIZO
IPC分类号： C23C16/52 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To perform a fine treatment on a material to be treated in a high- density plasma atmosphere without inflicting damage on the material to be treated in a plasma treater having a power slit style. CONSTITUTION:An upper electrode 21 and a susceptor 5, which is grounded independently of a treating container 21, are provided in opposition to each other upward and downward in the container 2. A 380kHz power from a high-frequency power supply 41 is applied to two electrodes shifting a phase by 180 deg. via a transformer 42. A 13.56MHz power from a high-frequency power supply 51 is applied to the electrode 21. As control of the density of plasma is conducted by the high-frequency power from the power supply 51 and the energy of ions is controlled by the high-frequency power from the power supply 41, a high-selectivity plasma treatment is performed on a wafer W without inflicting damage on the wafer W.

3. 发明专利

JPH0955374A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0955374A
公开(公告)日：1997-02-25
申请号：JP14218896
申请日：1996-05-13
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： KOSHIISHI AKIRA , OGASAWARA MASAHIRO , HIROSE KEIZO , NAGASEKI KAZUYA
IPC分类号： H05H1/46 , C23C16/50 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus by which the diffusion of a plasma is suppressed effectively when a substrate to be treated is treated with the plasma in a plasma atmosphere, by which a highly fine treatment can be executed at a high vacuum degree and a high plasma density and, at the same time, which prevents the inside wall of a treatment container from being sputtered by the plasma. SOLUTION: A lower-side insulator 13 is installed around a susceptor 6 to be used as a lower-part electrode, and an upper-side insulator 31 is installed around an upper-part electrode 21. The outer end part 31a of the upper insulator 31 is situated at the outside of the lower-side insulator 13, and it is situated in a position which is lower than the surface of a wafer W. A narrowest gap L between the lower-side insulator 13 and the upper-side insulator 31 is made narrower than a gap G between the electrodes. Since the diffusion of a plasma generated between the electrodes is suppressed so as not to be diffused to side parts as it is, the inside wall of a treatment container 3 is not sputtered.

4. 发明专利

JPH08264515A PLASMA TREATMENT DEVICE, PROCESSING DEVICE AND ETCHING DEVICE 失效
公开(公告)号：JPH08264515A
公开(公告)日：1996-10-11
申请号：JP12086995
申请日：1995-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , C23C16/507 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To perform fine working on a subject to be treatment by preventing diffusion of plasma generated between counter electrodes and improving plasma density. CONSTITUTION: High-frequency from a high-frequency power source 51 is applied on a top electrode 21, and the high-frequency from a high-frequency power source 52 is applied on a susceptor 5. In the vicinity of the circumference of the top electrode 21, an almost cylinder-shaped grounding electrode 27 is provided so as to surround the space between the electrodes. Each high-frequency power source is controlled by a phase controller 57, and high-frequencies with 180 deg. different current phases are applied to the top electrode 21 and the susceptor 5, respectively.

5. 发明专利

JPH07183270A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH07183270A
公开(公告)日：1995-07-21
申请号：JP34757193
申请日：1993-12-24
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ARAKI YOICHI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/48
摘要： PURPOSE:To provide a plasma treatment device capable of suppressing a deposit of sputtered matter from an initial discharge electrode or a cathode electrode and further particles such as damaged pieces of a thermion releasing member to a body to be treated and of enhancing a manufacturing yield of the body to be treated. CONSTITUTION:This embodiment comprises: an initial discharge electrode 7 for initial-discharging inactive gas together with a ringlike cathode electrode 5; a thermion release member 11 provided on the opposed surface to the initial discharge electrode 7 of the cathode electrode and having the same specific inner radius as the cathode electrode 5; an intermediate electrode 12 provided on the side of a treatment chamber 4 of the cathode electrode 5 and having a smaller inner radius than that of the cathode electrode 5; and an anode electrode 13 provided on the side of the treatment chamber 4 of this intermediate electrode 12 and having a smaller inner radius than that of the cathode electrode 5, and the side of the cathode electrode 5 of the initial discharge electrode 7 is formed to be projected, curved, or tapered.

6. 发明专利

JPH06291063A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH06291063A
公开(公告)日：1994-10-18
申请号：JP9681793
申请日：1993-03-31
申请人： TOSHIBA CORP , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , OKUMURA KATSUYA , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： B01J19/08 , C23C16/48 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a surface treatment device utilizing plasma which can prevent the contamination of a substrate to be treated by sputtering the inner wall of a reaction container with ions inside plasma. CONSTITUTION:The device is provided with a reaction container 1 for introducing plasma source gas, a second DC voltage power supply 26 for controlling the potential of the reaction container 1, a support stage 3 which is provided inside the reaction container 1 and on which a substrate 2 to be treated is mounted, a first DC voltage power source 25 for controlling the potential of the support stage 3, a first vacuum container 6 for generating electrons, and an electrode and coils 15 and 17 for introducing an electron beam into a reaction container 1 for turning the plasma source gas into plasma.

7. 发明专利

JP2003234331A PLASMA ETCHING METHOD AND APPARATUS 审中-公开
公开(公告)号：JP2003234331A
公开(公告)日：2003-08-22
申请号：JP2002127051
申请日：2002-04-26
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HONDA MASANOBU , NAGASEKI KAZUYA , INASAWA KOICHIRO , MATSUYAMA SHOICHIRO , HAYASHI HISATAKA
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching method for etching an organic-based material film as an inorganic-based material film with a mask at a high etching rate, and at the same time for etching the inorganic-based material film by a high etching selection ratio. SOLUTION: A pair of electrodes 2 and 16 is oppositely arranged in a chamber 1, a high-frequency electric field is formed between the pair of electrodes 2 and 16 by applying high-frequency power to the electrode 2 while the electrode 2 supports a substrate W to be treated having an organic-based material film, at the same time, treatment gas is supplied into the chamber 1, the electric field allows the plasma of the treatment gas to be formed, and the frequency of the high-frequency power to be applied to the electrode 2 is set at 50 to 150 MHz when the organic-based material film of the substrate W to be treated is subjected to plasma etching by plasma with an inorganic-based material film as a mask. COPYRIGHT: (C)2003,JPO

8. 发明专利

JPH06151371A PLASMA DEVICE 失效
公开(公告)号：JPH06151371A
公开(公告)日：1994-05-31
申请号：JP32761892
申请日：1992-11-13
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NAGASEKI KAZUYA , HIROSE KEIZO , HAYASAKA NOBUO , OKANO HARUO , OKUMURA KATSUYA
IPC分类号： C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To positively draw reactive species out of a plasma and also perform a plasma processing having high performance without exerting bad influences on a body to be processed. CONSTITUTION:Within a processing chamber 3 in which electrons accelerated by an electron accelerating means 22 are emitted, and to which reactive gas is supplied, a susceptor 24 for holding a semiconductor wafer W is arranged. The susceptor 24 is connected with a high frequency power source RF for drawing a reaction kind. Thus, the reactive species is drawn out of a plasma excited by emitting electrons to the reactive gas, and a semiconductor wafer surface is processed by this reaction kind.

9. 发明专利

JP2002093776A HIGH SPEED ETCHING METHOD OF Si 失效
公开(公告)号：JP2002093776A
公开(公告)日：2002-03-29
申请号：JP2000280376
申请日：2000-09-14
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： MIMURA TAKANORI , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/308 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide a high speed etching method of Si realizing a higher etching rate as compared with the prior art. SOLUTION: A workpiece W to be treated having an Si part is placed in a treatment container 1 which can be held in vacuum and when Si of the article is subjected to high speed etching in plasma of etching gas generated in the treatment container 1, gas pressure in the treatment container is set in the range of 13 to 1333 Pa (100 mTorr to 10 Torr) at the time of generating plasma.

10. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

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