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1. 发明专利

JPH06291063A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH06291063A
公开(公告)日：1994-10-18
申请号：JP9681793
申请日：1993-03-31
申请人： TOSHIBA CORP , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , OKUMURA KATSUYA , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： B01J19/08 , C23C16/48 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a surface treatment device utilizing plasma which can prevent the contamination of a substrate to be treated by sputtering the inner wall of a reaction container with ions inside plasma. CONSTITUTION:The device is provided with a reaction container 1 for introducing plasma source gas, a second DC voltage power supply 26 for controlling the potential of the reaction container 1, a support stage 3 which is provided inside the reaction container 1 and on which a substrate 2 to be treated is mounted, a first DC voltage power source 25 for controlling the potential of the support stage 3, a first vacuum container 6 for generating electrons, and an electrode and coils 15 and 17 for introducing an electron beam into a reaction container 1 for turning the plasma source gas into plasma.

2. 发明专利

JPH0722339A FORMATION OF THIN FILM 失效
公开(公告)号：JPH0722339A
公开(公告)日：1995-01-24
申请号：JP16564493
申请日：1993-07-05
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , HIMORI SHINJI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/205 , C23C16/04 , C23C16/34 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PURPOSE:To provide a method of forming a thin film, which is capable of performing a film formation of a high directional property even if a groove formed in the surface of a semiconductor substrate is formed into a tapered form in a high aspect ratio. CONSTITUTION:A method of forming a thin film is performed in a constitution having a process, in which the interior of a film-forming chamber, wherein a semiconductor substrate 1 with a groove formed in its surface is housed, is evacuated at a pressure of 10 Torr or lower and thereafter, TiCl4, hydrogen, nitrogen and NF3 gas are introduced in the film-forming chamber, then, a process, in which these gases are brought into a plasma state to form selectively a TiN thin film 2 excepting the sidewall part of the groove.

3. 发明专利

JPH08222553A PROCESSOR AND PROCESSING 失效
公开(公告)号：JPH08222553A
公开(公告)日：1996-08-30
申请号：JP5186395
申请日：1995-02-16
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： HIMORI SHINJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide uniform density of plasma for processing a target, by providing electron collecting means such that electrons migrating in a processing chamber migrate in a substantially horizontal direction to the processing surface of the target. CONSTITUTION: A processing section 3 has, on the orbital axis of electrons, an electron collecting means 25 for introducing accelerated electrons and collecting these electrons. A DC source voltage 37 is applied between an electron supply electrode 19 and the electron collecting means 25, such as, a collecting electrode, for collecting the electrons in the processing section 3. Thus, an electron beam for exciting a reactive gas, such as, Cl2 gas, can be stably collected by the collecting electrode 25 as the end side of the processing section 3 from the start side thereof. Therefore, the density of plasma generated by excitation of the Cl2 gas on an electron beam path can be made uniform on the start side and the end side.

4. 发明专利

JP2006186323A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2006186323A
公开(公告)日：2006-07-13
申请号：JP2005330251
申请日：2005-11-15
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIMORI SHINJI , IMAI NORIAKI , HORIGUCHI KATSUMI , NEZU TAKAAKI , MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HAYAMIZU TOSHIYASU , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA , SUGIYASU YOSHIKAZU
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of capacity coupling type capable of forming uniform plasma efficiently, with a high uniformity within field of plasma treatment, and hardly causing charge up damage. SOLUTION: A plasma processing apparatus of capacity coupling type 100 comprises a chamber 1 held in vacuum atmosphere; a first and a second electrodes 2, 18 one side of which holds a processed substrate W by being arranged to face each other inside the chamber 1; a plasma generating arrangement 10 generating a plasma of processing gas, by forming high frequency field between the first and the second electrodes 2, 18; and a component 25 grounded in direct current by being arranged at an outside location of the processed substrate W in a plasma generating region R in the chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI

5. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

6. 发明专利

JP2003297810A Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2003297810A
公开(公告)日：2003-10-17
申请号：JP2002101394
申请日：2002-04-03
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： HIMORI SHINJI , SAKAI ITSUKO
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23C16/509 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/32568
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of achieving uniformity in plasma density. SOLUTION: A plasma treatment vessel 2 in a plasma etching device 1 has a convex dome-shaped upper electrode 12 located above to close a recess 4 directed downwardly from the top of the plasma treatment vessel 2 and a lower electrode 14 positioned below the higher part of the upper electrode 12. The height of the upper electrode 12 relative to the lower electrode 14 increases going toward the middle from the exterior. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够实现等离子体密度均匀性的等离子体处理装置。解决方案：等离子体蚀刻装置1中的等离子体处理容器2具有位于上方的凸圆顶状上电极12，以封闭从等离子体处理容器2的顶部向下指向的凹部4和位于等离子体处理容器2的顶部的下电极14 上电极12的较高部分。上电极12相对于下电极14的高度从外部朝向中间增加。版权所有（C）2004，JPO

7. 发明专利

JP2010103465A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2010103465A
公开(公告)日：2010-05-06
申请号：JP2009075135
申请日：2009-03-25
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： UI AKIO , HAYASHI HISATAKA , KAMINATSUI KEN , HIMORI SHINJI , YAMADA NORIKAZU , OSE TAKESHI , ABE ATSUSHI
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32027 , H01J37/32045 , H01J37/32091 , H01J37/321 , H01J37/32137 , H01J37/32532 , H01J2237/3341 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67253 , H01L22/14 , H01L22/26
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, wherein the variation of incident energy of ions entering the substrate is suppressed while effectively suppressing a voltage change of a substrate on an electrode. SOLUTION: The substrate processing apparatus includes: a first electrode holding a substrate to be processed on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案：提供一种基板处理装置和基板处理方法，其中抑制了进入基板的离子的入射能量的变化，同时有效地抑制了电极上的基板的电压变化。基板处理装置包括：第一电极，其在第一电极的主表面上保持待加工基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加根据时间的流逝而减小的脉冲电压。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009187975A Plasma treatment apparatus of substrate and plasma treatment method thereof 有权
标题翻译：基质等离子体处理装置及其等离子体处理方法
公开(公告)号：JP2009187975A
公开(公告)日：2009-08-20
申请号：JP2008023066
申请日：2008-02-01
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： UI AKIO , TAMAOKI NAOKI , ICHIKAWA HISASHI , HAYASHI HISATAKA , KAMINATSUI KEN , HIMORI SHINJI , YAMADA NORIKAZU , OSE TAKESHI , ABE ATSUSHI
IPC分类号： H01L21/3065 , C23C16/509 , H01L21/205 , H05H1/46
CPC分类号： H01J37/32027 , H01J37/32045 , H01J37/32091
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus of a substrate, which can accurately process a substrate by increasing a radical species density suitable for substrate processing, can control ion radical energy to an energy value suitable for substrate processing and to a small band energy width, and can form an excellent embedded film, and to provide a plasma treatment method thereof.
SOLUTION: The plasma treatment apparatus includes: a substrate holding electrode 22 and an opposite electrode 23 which are disposed in a chamber 21; a high-frequency generator 27 for applying a high frequency of ≥50 MHz to the substrate holding electrode 22; a DC negative pulse generator 29 for applying a DC negative pulse voltage so that the voltage is superimposed over the high frequency; and a controller 30 for controlling so that the high frequency can be intermittently applied and the DC negative pulse voltage can be intermittently applied in response to a timing of turning ON/OFF the high frequency.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以通过增加适用于基板处理的自由基种类密度来精确地处理基板的基板的等离子体处理装置，可以将离子自由基能量控制到适合于基板处理的能量值，并且小的能带宽度，并且可以形成优良的嵌入膜，并提供其等离子体处理方法。解决方案：等离子体处理装置包括：设置在室21中的基板保持电极22和相对电极23; 高频发生器27，用于将≥50MHz的高频施加到衬底保持电极22; DC负脉冲发生器29，用于施加DC负脉冲电压，使得电压叠加在高频上; 以及控制器30，用于响应于打开/关闭高频的定时，间歇地施加高频率并且可以间歇地施加DC负脉冲电压。版权所有（C）2009，JPO＆INPIT

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