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1. 发明专利

JP2011187184A Surface treatment device and surface treatment method 审中-公开
标题翻译：表面处理装置和表面处理方法
公开(公告)号：JP2011187184A
公开(公告)日：2011-09-22
申请号：JP2010048324
申请日：2010-03-04
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： MIYAMOTO TAKASHI , NAKANO HARUKA , WATANABE SHIGERU
IPC分类号： H05H1/24 , C23C26/00 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment device and a surface treatment method suppressing a fall in productivity and improving a surface treating effect. SOLUTION: The surface treatment device includes a conveying section for conveying a treated object in a predetermined direction; a treatment section for performing, to the treated object, at least one kind of treatment selected from a group consisting of plasma treatment, ultraviolet irradiation treatment and corona discharge treatment; a moving section for moving the treatment section; and a control section for controlling the moving section. The control section controls the moving section to move the treatment section in the conveying direction along a conveying surface of the conveying section when performing the treatment to the treated object conveyed in the predetermined direction, and controls relative speed between the treated object and the treatment section. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制生产率下降并提高表面处理效果的表面处理装置和表面处理方法。解决方案：表面处理装置包括用于沿预定方向输送被处理物体的输送部分; 对处理对象进行从由等离子体处理，紫外线照射处理和电晕放电处理等组成的组中的至少一种处理的处理部，用于移动处理部的移动部; 以及用于控制移动部的控制部。当对预定方向输送的处理对象进行处理时，控制部分控制移动部分沿输送方向沿输送方向移动处理部分，并控制处理对象与处理部分之间的相对速度。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010212639A Device and method for peeling resist 有权
标题翻译：用于剥离电阻的装置和方法
公开(公告)号：JP2010212639A
公开(公告)日：2010-09-24
申请号：JP2009060240
申请日：2009-03-12
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： WATANABE SHIGERU
IPC分类号： H01L21/027 , G03F7/42 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a device and method for peeling a resist suppressing influence on a base and improving peelability of the resist. SOLUTION: This device for peeling a resist is used for peeling a resist formed on a processing object. The device for peeling a resist includes: a cracking liquid supply means to supply a cracking liquid to the resist; a drying means to dry the cracking liquid supplied to the resist to cause a crack on the resist; and a peeling liquid supply means to supply a peeling liquid to the resist with the crack caused. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案：提供一种剥离抗蚀剂抑制对基材的影响的装置和方法，并提高抗蚀剂的剥离性。解决方案：用于剥离抗蚀剂的装置用于剥离形成在加工对象上的抗蚀剂。用于剥离抗蚀剂的装置包括：向抗蚀剂供给裂化液的裂化液供给装置; 干燥装置，用于干燥供应到抗蚀剂的裂化液，以在抗蚀剂上产生裂纹; 以及剥离液供给单元，其在产生裂缝的情况下向剥离剂供给剥离液。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010206068A Plasma processing apparatus, and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2010206068A
公开(公告)日：2010-09-16
申请号：JP2009051856
申请日：2009-03-05
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： WATANABE SHIGERU , TAKEISHI KOJI , SAKAI TETSUYA , MUTO MAKOTO , MATSUSHIMA DAISUKE , SHIRAHAMA YUKI , WATANABE DAISUKE
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method that can suppress an influence on an object to be processed and improve productivity when unnecessary matter is removed. SOLUTION: The plasma processing apparatus 1 includes a processing container 6 containing the object W to be processed and being capable of maintaining an atmosphere of pressure reduced below the atmospheric pressure, a pressure reducing means 3 of reducing the pressure in the processing container, a plasma generation chamber having a space communicating with the space wherein the object to be processed is stored and generating plasma, a plasma generating means 2 of making an electromagnetic wave act on the space wherein the plasma is generated to generate the plasma, a gas supply means 4 of supplying a process gas to the space wherein the plasma is generated, a removal liquid steam supply means 30 of supplying removal liquid steam to the space wherein the object to be processed is stored, and a first temperature control means 51 of controlling the temperature of the object to be processed so as to be a temperature or below at which the removal liquid stream condenses. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够抑制对待处理物体的影响的等离子体处理装置和等离子体处理方法，并且在不必要的物质被去除时提高生产率。解决方案：等离子体处理装置1包括容纳待处理对象物W并能够将压力降低到大气压以下的气氛的处理容器6，减小处理容器内的压力的减压装置3 等离子体产生室，其具有与待处理物体相互存储并产生等离子体的空间连通的空间;等离子体产生装置2，其使电磁波作用于产生等离子体的空间以产生等离子体;气体供给装置4，其向生成等离子体的空间供给处理气体;去除液体蒸汽供给装置30，其向被处理物体存储的空间供给去除液体蒸汽;第一温度控制装置51，被处理物的温度为除去液体流冷凝的温度以下。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2013059854A Dressing device, dressing method, and polishing device 审中-公开
标题翻译：连接装置，连接方法和抛光装置
公开(公告)号：JP2013059854A
公开(公告)日：2013-04-04
申请号：JP2012166066
申请日：2012-07-26
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： TSUCHIMOCHI TAKAAKI , MIYAMOTO TAKASHI , WATANABE SHIGERU
IPC分类号： B24B53/095 , B24B53/017 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To perform dressing while preventing the wear of a polishing pad and the contamination of a dresser.SOLUTION: Dressing liquid to be used in a dressing process for the polishing pad 1 is pure water mixed with fine bubbles. A dresser 10 is formed annular to perform the dressing process with the dressing liquid being supplied into an annular hollow portion. The dressing liquid containing the fine bubbles, supplied into the hollow portion of the dresser, stays in the hollow portion of the dresser for a fixed time, so that the fine bubbles in the dressing liquid adsorb and remove dust attached on the polishing pad 1, the dresser 10 and the like.
摘要翻译：要解决的问题：进行修整，同时防止抛光垫的磨损和修整器的污染。解决方案：用于抛光垫1的修整过程中的敷料液体是与微小气泡混合的纯水。修整器10形成为环状以进行修整过程，其中修整液被供应到环形中空部分中。供给到修整器的中空部分的含有微小气泡的敷料液固定在修整器的中空部分中，使得修整液中的微小气泡吸附并除去附着在抛光垫1上的灰尘，修整器10等。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011245612A Cleaning apparatus 有权
标题翻译：清洁装置
公开(公告)号：JP2011245612A
公开(公告)日：2011-12-08
申请号：JP2010228513
申请日：2010-10-08
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： HIROSE HARUMICHI , MAKINO TSUTOMU , MIYAMOTO TAKASHI , WATANABE SHIGERU
IPC分类号： B23Q11/00 , C02F1/24
CPC分类号： Y02P70/171
摘要： PROBLEM TO BE SOLVED: To provide a cleaning apparatus in which a larger amount of gas such as oxygen can be thoroughly spread in a used treating liquid.SOLUTION: The cleaning apparatus for cleaning the treating liquid used in a processing machine includes: a liquid storage tank 10; bubble production mechanisms 11, 21, 22 for producing bubbles in the used treating liquid and discharging the bubble-containing used treating liquid; and a supply part 26 for guiding the bubble-containing used treating liquid to be discharged from the bubble production mechanisms to the liquid storage tank 10 and supplying the guided bubble-containing used treating liquid to the liquid storage tank 10 while spouting the guided bubble-containing used treating liquid toward the bottom of the liquid storage tank.
摘要翻译：要解决的问题：提供一种清洗装置，其中较大量的气体如氧气可以在使用的处理液中充分地扩散。解决方案：用于清洗处理机中使用的处理液的清洁装置包括：液体储存罐10; 气泡生成机构11,21,22，用于在所使用的处理液中产生气泡并排出含气泡的废弃处理液; 以及用于将从气泡产生机构排出的含气泡的待处理液体引导到液体储存罐10并将引导的含气泡的废弃处理液供给到液体储存罐10同时喷射导气泡形成装置的供应部分26，含有使用过的处理液朝向储液罐的底部。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011129741A Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置和方法
公开(公告)号：JP2011129741A
公开(公告)日：2011-06-30
申请号：JP2009287371
申请日：2009-12-18
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： HIROSE HARUMICHI , TAKEISHI KOJI , MIYAMOTO TAKASHI , WATANABE SHIGERU , SAKAI TETSUYA , INOMATA SAIKO
IPC分类号： H01L21/304 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a compact apparatus for processing a substrate, along with a method of processing the substrate, capable of processing the substrate by efficiently producing liquid containing nano-bubbles which are minute air bubbles and supplying the liquid to the substrate.
SOLUTION: The substrate processing apparatus 1 includes a container 30 which is open upward, able to accommodate a liquid, divided into a first container section 41 and a second container section 42, and has at the bottom a passage 49 which allows the liquid to move from the first container section 41 to the second container section 42, a minute air bubble producing unit 40 which is disposed in the liquid L in the first container section 41 and mixes gas in the liquid L to produce the liquid L containing minute air bubbles in the first container section 41, and a pump 35 which moves the liquid L containing minute air bubbles in the first container section 41 through the passage 49 at the bottom into the second container section 42 and transfers the liquid L containing minute air bubbles from the second container section 42 to a substrate W.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于处理基板的紧凑装置以及加工基板的方法，能够通过有效地生产含有微小气泡并将液体供应的纳米气泡的液体来处理基板底物。解决方案：基板处理装置1包括容器30，容器30向上开口，能够容纳液体，分为第一容器部分41和第二容器部分42，并且在底部具有通道49，该通道允许液体从第一容器部分41移动到第二容器部分42;微小气泡产生单元40，其设置在第一容器部分41中的液体L中，并且混合液体L中的气体，以产生包含分钟的液体L 第一容器部分41中的气泡和将第一容器部分41中含有微小气泡的液体L通过底部的通道49移动到第二容器部分42中并将包含微小气泡的液体L移动的泵35 从第二容器部分42到衬底W.版权所有：（C）2011，JPO＆INPIT

7. 发明专利

JP2009253133A Method of planarizing semiconductor wafer, local plasma treatment apparatus, and method of manufacturing semiconductor wafer 有权
标题翻译：平面化半导体滤波器的方法，局部等离子体处理装置及制造半导体滤波器的方法
公开(公告)号：JP2009253133A
公开(公告)日：2009-10-29
申请号：JP2008101137
申请日：2008-04-09
申请人： Covalent Materials Corp , Shibaura Mechatronics Corp , コバレントマテリアル株式会社 , 芝浦メカトロニクス株式会社
发明人： NAKANO HARUKA , WATANABE SHIGERU , HIROSE HARUMICHI , IWAMI MUNENORI , IVAN PETROV GANASHEV , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , SENSAI KOJI
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of planarizing a semiconductor wafer, a local plasma treatment apparatus, and a method of manufacturing a semiconductor wafer which can shorten the treatment time.
SOLUTION: In the method of planarizing a semiconductor wafer, an etching gas is excited by plasmas to produce a gas containing neutral active species and then the produced gas is locally supplied to the principal plane of the semiconductor wafer to locally etch the semiconductor wafer to planarize the semiconductor wafer. In the method, the in-plane surface of the semiconductor wafer is divided into a plurality of regions having a different profile of an etch rate, and a position to perform local etching is determined in each region so as to suppress a difference in profile of the etch rate among the plurality of regions.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种平面化半导体晶片的方法，局部等离子体处理装置以及可以缩短处理时间的半导体晶片的制造方法。解决方案：在平面化半导体晶片的方法中，通过等离子体激发蚀刻气体以产生含有中性活性物质的气体，然后将所产生的气体局部地供应到半导体晶片的主平面以局部蚀刻半导体晶片以使半导体晶片平坦化。在该方法中，半导体晶片的面内表面被划分为具有不同刻蚀速率的多个区域，并且在每个区域中确定执行局部蚀刻的位置，以便抑制轮廓的差异多个区域之间的蚀刻速率。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2014150284A Local plasma processing apparatus 有权
标题翻译：本地等离子体加工设备
公开(公告)号：JP2014150284A
公开(公告)日：2014-08-21
申请号：JP2014089983
申请日：2014-04-24
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社 , Globalwafers Japan Co Ltd , グローバルウェーハズ・ジャパン株式会社
发明人： NAKANO HARUKA , WATANABE SHIGERU , HIROSE HARUMICHI , IWAMI MUNENORI , IVAN PETROV GANASHEV , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , SENSAI KOJI
IPC分类号： H01L21/3065 , H01L21/304 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a local plasma processing apparatus in which the processing time can be suppressed.SOLUTION: A local plasma processing apparatus includes plasma generation means for exciting the etching gas by plasma, a mounting table for mounting a semiconductor wafer, and control means for controlling the relative position of the plasma generation means and the mounting table. The control means controls the relative position of the plasma generation means and mounting table so as to suppress the difference of profile of etching rate between a plurality of regions of the semiconductor wafer, divided into a plurality of regions where the profile of etching rate is different from each other.
摘要翻译：要解决的问题：提供可以抑制处理时间的局部等离子体处理装置。解决方案：局部等离子体处理装置包括用于通过等离子体激发蚀刻气体的等离子体产生装置，用于安装半导体晶片的安装台，以及用于控制等离子体产生装置和安装台的相对位置的控制装置。控制装置控制等离子体产生装置和安装台的相对位置，以便抑制半导体晶片的多个区域之间的蚀刻速率轮廓差异，划分成蚀刻速率不同的多个区域从彼此。

9. 发明专利

JP2013043239A Machining head, working machine and machining method 审中-公开
标题翻译：加工头，加工机及加工方法
公开(公告)号：JP2013043239A
公开(公告)日：2013-03-04
申请号：JP2011181548
申请日：2011-08-23
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： TOITA SHO , MIYAMOTO TAKASHI , WATANABE SHIGERU
IPC分类号： B24B41/047 , B24B37/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a machining head capable of effectively utilizing solution containing fine bubbles for machining the surface of a workpiece.SOLUTION: The machining head 100 for machining the surface of the workpiece W in the state that a rotating machining tool 10 contacts the surface of the workpiece W includes at least one flow path 25 provided inside the machining tool 10 for guiding a supplied liquid to be discharged to the vicinity of a site where the machining tool 10 contacts the workpiece W, the flow path 25 having restriction parts 255a-255h.

10. 发明专利

JP2012182441A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2012182441A
公开(公告)日：2012-09-20
申请号：JP2012017555
申请日：2012-01-31
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： WATANABE SHIGERU , ABE MASAYASU , HIROSE HARUMICHI , KONASE ATSUSHI , MIYAMOTO TAKASHI , TOITA SHO
IPC分类号： H01L21/304 , B08B3/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent the deterioration of the capacity of the substrate processing using fine air bubbles.SOLUTION: A substrate processing apparatus is provided with: a fine air bubble generating device 3 generating a process liquid S2 including fine air bubbles; a nozzle 5 discharging the process liquid S2 including the fine air bubbles; a pipeline 4b connecting the fine air bubble generating device 3 with the nozzle 5; and an exhaust mechanism removing the air bubbles adhered to an inner wall of the pipeline in the middle of the pipeline 4b. The exhaust mechanism is composed of an inner pipeline 41a, a space K formed between the inner pipeline 41a and an outer pipeline 41b, and a pump P2.
摘要翻译：要解决的问题：为了防止使用细小气泡的基板处理的容量的劣化。＆lt; P＆gt;解决方案：基板处理装置设置有：微细气泡发生装置3，其产生包括细小气泡的处理液体S2; 排出包括微细气泡的处理液体S2的喷嘴5; 将细气泡发生装置3与喷嘴5连接的管路4b; 以及排出机构，除去在管路4b的中央附着在管路内壁上的气泡。排气机构由内管41a，形成在内管41a和外管41b之间的空间K和泵P2构成。版权所有（C）2012，JPO＆INPIT

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