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1. 发明专利

JP2010237692A Photomask blank and method of manufacturing photomask 有权
标题翻译： PHOTOMASK BLANK和制造光电子的方法
公开(公告)号：JP2010237692A
公开(公告)日：2010-10-21
申请号：JP2010122341
申请日：2010-05-28
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/30 , G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed during dry etching processing on a light shield film as compared with a case wherein a conventional photomask blank having a light shield film is used, and to manufacture a mask with higher precision. SOLUTION: The present invention relates to a photomask blank as a material for a photomask provided with a mask pattern having, on a transparent substrate 1, a region which is transparent to exposure light and a region which is effectively opaque, the photomask blank having a light shield film 2 which is laminated on the transparent substrate 1 through or not through another film and can be etched by fluorine-based dry etching and made of metal or a metal compound, an etching mask film 4 which is formed on the light shield film 2 and made of metal or a metal compound having resistance to the fluorine-based dry etching, and an antireflective film 3 formed on the etching mask film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：与使用具有遮光膜的常规光掩模坯料相比，为了减轻由于在干蚀刻处理期间形成的图案的密度依赖性对遮光膜的图案尺寸的变化，并且制造具有更高精度的掩模。解决方案：本发明涉及一种光掩模坯料，其用作具有掩模图案的光掩模的材料，该掩模图案在透明基板1上具有对曝光光透明的区域和有效不透明的区域，光掩模空白具有通过或不通过另一膜层压在透明基板1上的遮光膜2，并且可以通过氟基干蚀刻被蚀刻，由金属或金属化合物制成;蚀刻掩模膜4，其形成在遮光膜2，具有耐氟基干蚀刻性的金属或金属化合物，以及形成在蚀刻掩模膜上的防反射膜3。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2007241135A Levenson type phase shift mask and method for manufacturing same 有权
标题翻译： LEVENSON型相移片及其制造方法
公开(公告)号：JP2007241135A
公开(公告)日：2007-09-20
申请号：JP2006066631
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： KOJIMA YOSUKE , CHIBA KAZUAKI , HARAGUCHI TAKASHI , YOSHIKAWA HIROKI , INAZUKI SADAOMI , KANEKO HIDEO , OKAZAKI SATOSHI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a Levenson type phase shift mask that can significantly improve CD (Critical Dimension) performance, and to provide a method for manufacturing the mask. SOLUTION: The Levenson type phase shift mask has an engraved portion in a substrate transparent to exposure light so as to control phases of transmitted light, and is characterized in that a light shielding film provided in a portion adjacent to the engraved portion of the substrate or in a peripheral portion of the substrate includes a film (A) made of a material which can be etched in an etching process using an etching gas essentially comprising a fluorine-based gas. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可显着提高CD（临界尺寸）性能的莱文森型相移掩模，并提供制造掩模的方法。解决方案：莱文森型相移掩模在对曝光光透明的基板中具有雕刻部分，以控制透射光的相位，其特征在于，设置在邻近雕刻部分的部分的遮光膜衬底或衬底的周边部分包括由使用基本上包含氟基气体的蚀刻气体在蚀刻工艺中可蚀刻的材料制成的膜（A）。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007241137A Halftone phase shift mask and method for manufacturing the same 有权
标题翻译： HONEFTONE相位移屏蔽及其制造方法
公开(公告)号：JP2007241137A
公开(公告)日：2007-09-20
申请号：JP2006066633
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： HARAGUCHI TAKASHI , FUKUSHIMA YUICHI , CHIBA KAZUAKI , KOJIMA YOSUKE , SAGA TADASHI , YOSHIKAWA HIROKI , INAZUKI SADAOMI , KANEKO HIDEO , OKAZAKI SATOSHI
IPC分类号： G03F1/29 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask that can significantly improve CD (critical dimension) performance, and to provide a method for manufacturing the mask.
SOLUTION: The halftone phase shift mask has an engraved portion in a substrate transparent to exposure light so as to control the phase of transmitted light, and is characterized in that a light shielding film provided in a portion adjacent to the engraved portion of the substrate or in a peripheral portion of the substrate includes a film (A) made of a material which can be etched in an etching process using an etching gas essentially comprising a fluorine-based gas.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以显着改善CD（临界尺寸）性能的半色调相移掩模，并提供制造掩模的方法。解决方案：半色调相移掩模具有在曝光中透明的基板上的雕刻部分，以便控制透射光的相位，并且其特征在于，设置在邻近雕刻部分的部分中的遮光膜衬底或衬底的周边部分包括由使用基本上包含氟基气体的蚀刻气体在蚀刻工艺中可蚀刻的材料制成的膜（A）。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007241065A Photomask blank and photomask 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：JP2007241065A
公开(公告)日：2007-09-20
申请号：JP2006065800
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/32 , G03F1/68
CPC分类号： G03F1/32 , G03F1/38 , G03F1/46 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank in which sufficient process accuracy and low dependence of pattern density can be obtained in an etching process, further, a phase shift film or a transparent substrate disposed below a light shielding film may be hardly damaged upon removing the light shielding film, and similar process accuracy can be obtained to that of a conventional one using a chromium-based light shielding film, and to provide a photomask produced by patterning the photomask blank. SOLUTION: The photomask blank comprises: an etching stopper layer composed of a monolayer or multilayer which has durability against fluorine-based dry etching and is removable by chlorine-containing dry etching, formed directly on a transparent substrate or with other layers interposed; a light shielding film composed of a monolayer comprising a material containing a transition metal and silicon or of a multilayer including one or more layers made of a material containing a transition metal and silicon, layered in contact with the etching stopper film; and an antireflection film composed of a monolayer or multilayer, laminated in contact with the light shielding film. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供在蚀刻工艺中可以获得足够的加工精度和图案密度的低依赖性的光掩模坯料，此外，设置在遮光膜下方的相移膜或透明基板可以是在去除遮光膜时几乎不损坏，并且可以获得与使用铬基遮光膜的常规方法相似的加工精度，并提供通过图案化光掩模坯料而制成的光掩模。光掩模坯料包括：由单层或多层组成的蚀刻阻挡层，其具有耐氟基干蚀刻的耐久性，并且可通过含氯干蚀刻除去，直接形成在透明基板上或与其它层插入 ; 由包含过渡金属和硅的材料的单层或由包含过渡金属和硅的材料制成的一层或多层的多层构成的遮光膜，其与蚀刻阻挡膜接触地层叠; 和由遮光膜层叠的单层或多层构成的防反射膜。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007241060A Photomask blank and method for manufacturing photomask 有权
标题翻译： PHOTOMASK BLANK及其制造方法
公开(公告)号：JP2007241060A
公开(公告)日：2007-09-20
申请号：JP2006065763
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/30 , G03F1/32 , G03F1/34 , G03F1/60 , G03F1/68 , G03F1/80 , H01L21/027
CPC分类号： G03F1/32 , C23F4/00 , G03F1/30 , G03F1/46 , G03F1/54 , G03F1/80 , Y10T428/31616
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing a photomask in which sufficient process accuracy with low dependence of pattern density is obtained in an etching process. SOLUTION: The photomask blank is a raw material of a photomask having a mask pattern including a transparent area to exposure light and an effectively opaque area formed on a transparent substrate 1, and has a light shielding film 2 comprising a metal or a metal compound that can be etched by fluorine-based dry etching, particularly a material containing a transition metal and silicon, and an etching mask film 4 comprising a metal or a metal compound having durability against fluorine-based dry etching, formed on the light shielding film. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供光掩模坯料和制造光掩模的方法，其中在蚀刻工艺中获得具有低图案密度依赖性的足够的加工精度。解决方案：光掩模坯料是具有掩模图案的光掩模的原料，掩模图案包括曝光光的透明区域和形成在透明基板1上的有效不透明区域，并且具有包含金属或可通过氟基干蚀刻特别是含有过渡金属和硅的材料进行蚀刻的金属化合物和形成在光屏蔽上形成的具有耐氟基干蚀刻耐久性的金属或金属化合物的蚀刻掩模膜4 电影。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2012032823A Method of manufacturing photomask blank and binary mask 有权
标题翻译：制造光电薄膜和二次阴影的方法
公开(公告)号：JP2012032823A
公开(公告)日：2012-02-16
申请号：JP2011205808
申请日：2011-09-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/54 , G03F1/46 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed and to manufacture a mask with higher precision.SOLUTION: A photomask blank comprises: a light shielding film 2 made of a metal or a metal compound which can be etched by fluorine-based dry etching laminated on a transparent substrate 1 through or not through the other film; an antireflection film 3 made of a metal or a metal compound which can be etched by fluorine-based dry etching formed on the light shielding film; and an etching mask film 4 made of a metal or a metal compound having durability against fluorine-based dry etching formed on the antireflection film, and is used as material for a binary mask in photolithography for forming a resist pattern with a width of 0.1 μm or less with light having an exposure wavelength of 250 nm in which the thickness of an etching mask film is 2 to 15 nm.
摘要翻译：要解决的问题：为了减少由于要形成的图案的密度依赖性而导致的图案尺寸的变化并且制造具有更高精度的掩模。解决方案：光掩模坯料包括：由金属或金属化合物制成的遮光膜2，其可以通过或不通过另一膜层压在透明基板1上的通过氟基干蚀刻进行蚀刻; 由金属或金属化合物制成的抗反射膜3，可以通过形成在遮光膜上的氟基干蚀刻进行蚀刻; 以及由抗反射膜形成的耐氟基干蚀刻耐久性的金属或金属化合物制成的蚀刻掩模膜4，作为用于形成宽度为0.1μm的抗蚀剂图案的光刻用二元掩模用材料以下的曝光波长为250nm的光，其中蚀刻掩模膜的厚度为2〜15nm。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012003287A Method for manufacturing photo mask, and photo mask 有权
标题翻译：制造照相胶片的方法和照相胶片
公开(公告)号：JP2012003287A
公开(公告)日：2012-01-05
申请号：JP2011205807
申请日：2011-09-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/54 , G03F1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photo mask with higher accuracy compared with the case that a photomask blank having a conventional light shielding film is used in an etching process of a light shielding film, by reducing pattern size variance caused by density dependency of patterns to be formed.SOLUTION: A photo mask is manufactured from a photomask blank having a light shielding film laminated with or without another film on a transparent substrate and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; an anti-reflection film formed on the light shielding film and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; and an etching mask film with a film thickness of 2 to 30 nm formed on the anti-reflection film and composed of a metal or a metallic compound which has resistance to the fluorine-based dry etching. A manufacturing method of the photomask includes resist patterning, chlorine-based dry etching, and fluorine-based dry etching.
摘要翻译：解决问题的方法为了提供一种与遮光膜的蚀刻工艺中使用具有传统的遮光膜的光掩模坯料相比，通过减小图案尺寸的方法，以更高的精度制造光掩模的方法由形成的图案的密度依赖性引起的方差。解决方案：光掩模由具有在透明基板上层叠有或不具有另一膜的遮光膜的光掩模坯料制成，并且由能够通过氟基干蚀刻蚀刻的金属或金属化合物构成; 由遮光膜形成并由可通过氟基干蚀刻蚀刻的金属或金属化合物构成的抗反射膜; 以及形成在抗反射膜上的膜厚度为2〜30nm的蚀刻掩模膜，由具有耐氟基干蚀刻性的金属或金属化合物构成。光掩模的制造方法包括抗蚀剂图案化，氯基干蚀刻和氟基干蚀刻。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2003075982A Method for producing levenson type phase shift mask 有权
标题翻译：用于生产LEVENSON型相移片的方法
公开(公告)号：JP2003075982A
公开(公告)日：2003-03-12
申请号：JP2001266816
申请日：2001-09-04
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： CHIBA KAZUAKI , TAKEOKA DAISUKE , TAKAHASHI HIROYUKI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a Levenson type phase shift mask having excellent balance of quantity of transmitted light and free of defects.
SOLUTION: A blank 10 with a light shielding film 21 and a regist layer 31 formed on a transparent substrate 11 is prepared, and a mask 20 having a light shielding pattern 21a and transmission regions 22 formed on the transparent substrate 11 is produced by carrying out a series of patterning procedures. A regist pattern 32a having openings 33 is formed on the light shielding pattern 21a of the mask 20, the edge parts of the light shielding pattern 21a are dry- etched to form a light shielding pattern 21b, the transparent substrate 11 is then dry-etched to form trenches 12 and the regist pattern 21a is removed to obtain the objective Levenson type phase shift mask (single trench system) 100 with the light shielding patterns 21a and 21b, the transmission regions 22 having a phase difference of 0° and shifters 12 having a phase difference of 180° formed on the transparent substrate 11.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有优异的透射光量平衡和无缺陷的莱文森型相移掩模的制造方法。解决方案：制备具有形成在透明基板11上的遮光膜21和注册层31的坯料10，并且通过执行在透明基板11上形成具有遮光图案21a和透明区域22的掩模20 一系列图案化程序。在掩模20的遮光图案21a上形成具有开口部33的引导图案32a，对该遮光图案21a的边缘部进行干法蚀刻以形成遮光图案21b，然后对该透明基板11进行干式蚀刻以形成沟槽12并且去除注册图案21a以获得具有遮光图案21a和21b的透光区域22，其相位差为0度的目标莱文森型相移掩模（单沟槽系统）100。以及相位差为180度的移位器12。形成在透明基板11上。

9. 发明专利

JP2005017488A Method for manufacturing phase shift mask, phase shift mask, and method for transferring pattern 审中-公开
标题翻译：用于制造相移片掩模的方法，相移片掩模和用于传送图案的方法
公开(公告)号：JP2005017488A
公开(公告)日：2005-01-20
申请号：JP2003179613
申请日：2003-06-24
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： FURUMIZO TORU , CHIBA KAZUAKI , MORITA MOTOHIKO , TAKAHASHI HIROYUKI , KONISHI TOSHIO , SASAKI ATSUSHI , YOSHII TAKASHI
IPC分类号： G03F1/29 , G03F1/32 , G03F1/36 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask for preventing the occurrence of a concave defect in a light transmitting part in the main pattern or in an auxiliary pattern by forming the main pattern and the auxiliary pattern in separated processes, to provide a phase shift mask, and to provide a method for transferring a pattern by using the phase shift mask.
SOLUTION: First, a main pattern 51a comprising an engraved transparent substrate 11 is formed in a phase shift mask blank 10 having a halftone phase shift film 21 consisting of MoSi or the like and a light shielding film 31 comprising a chromium film on a transparent substrate 11 such as a quartz substrate. Further, an auxiliary pattern 61 is formed, a halftone phase shift region 21a and a light shielding region 31 are formed to obtain the phase shift mask 100.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造用于通过将主图案和辅助图案形成在主图案或辅助图案中的光透射部分中发生凹陷缺陷的相移掩模的制造方法提供相移掩模，并提供通过使用相移掩模传送图案的方法。解决方案：首先，将具有雕刻的透明基板11的主图案51a形成在具有由MoSi等构成的半色调相移膜21的相移掩模板10和包含铬膜的遮光膜31上透明基板11，例如石英基板。此外，形成辅助图案61，形成半色调相移区域21a和遮光区域31以获得相移掩模100.版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2007147941A Photomask having focus monitor mark and transfer simulation method 有权
标题翻译：具有聚焦监测标记和转移模拟方法的光电子
公开(公告)号：JP2007147941A
公开(公告)日：2007-06-14
申请号：JP2005341581
申请日：2005-11-28
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： KOJIMA YOSUKE , CHIBA KAZUAKI , FURUMIZO TORU , SHIRASAKI MASANORI
IPC分类号： G03F1/44 , G03F1/68 , G03F1/84 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photomask that can accurately control a focus at a desired position within the photomask face in a transfer simulation of a photomask using a lithographic simulation microscope, and to provide a transfer simulation method on a photomask. SOLUTION: A main pattern of a photomask having a focus monitor mark capable of controlling a focus position can be subjected to a transfer simulation giving a just-focus and accurate contrast of transmitted light intensity, only by setting a focus controlling system 80 on a measurement stage of a lithographic simulation microscope, the system capable of giving a just-focus and accurate contrast of transmitted light intensity. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种光掩模，其可以使用光刻模拟显微镜在光掩模的转印模拟中精确地控制光掩模面内的期望位置处的焦点，并且在光掩模上提供转印模拟方法。解决方案：只有通过设置聚焦控制系统80，可以对具有能够控制聚焦位置的聚焦监视器标记的光掩模的主图案进行转印模拟，从而提供正确聚焦和准确的透射光强度对比度在光刻模拟显微镜的测量阶段，该系统能够提供透射光强度的正确对焦和准确的对比度。版权所有（C）2007，JPO＆INPIT

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