专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2003075982A Method for producing levenson type phase shift mask 有权
标题翻译：用于生产LEVENSON型相移片的方法
公开(公告)号：JP2003075982A
公开(公告)日：2003-03-12
申请号：JP2001266816
申请日：2001-09-04
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： CHIBA KAZUAKI , TAKEOKA DAISUKE , TAKAHASHI HIROYUKI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a Levenson type phase shift mask having excellent balance of quantity of transmitted light and free of defects.
SOLUTION: A blank 10 with a light shielding film 21 and a regist layer 31 formed on a transparent substrate 11 is prepared, and a mask 20 having a light shielding pattern 21a and transmission regions 22 formed on the transparent substrate 11 is produced by carrying out a series of patterning procedures. A regist pattern 32a having openings 33 is formed on the light shielding pattern 21a of the mask 20, the edge parts of the light shielding pattern 21a are dry- etched to form a light shielding pattern 21b, the transparent substrate 11 is then dry-etched to form trenches 12 and the regist pattern 21a is removed to obtain the objective Levenson type phase shift mask (single trench system) 100 with the light shielding patterns 21a and 21b, the transmission regions 22 having a phase difference of 0° and shifters 12 having a phase difference of 180° formed on the transparent substrate 11.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有优异的透射光量平衡和无缺陷的莱文森型相移掩模的制造方法。解决方案：制备具有形成在透明基板11上的遮光膜21和注册层31的坯料10，并且通过执行在透明基板11上形成具有遮光图案21a和透明区域22的掩模20 一系列图案化程序。在掩模20的遮光图案21a上形成具有开口部33的引导图案32a，对该遮光图案21a的边缘部进行干法蚀刻以形成遮光图案21b，然后对该透明基板11进行干式蚀刻以形成沟槽12并且去除注册图案21a以获得具有遮光图案21a和21b的透光区域22，其相位差为0度的目标莱文森型相移掩模（单沟槽系统）100。以及相位差为180度的移位器12。形成在透明基板11上。

IPRDB

热门服务

关于我们

友情链接

联系方式