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1. 发明专利

JP2010237692A Photomask blank and method of manufacturing photomask 有权
标题翻译： PHOTOMASK BLANK和制造光电子的方法
公开(公告)号：JP2010237692A
公开(公告)日：2010-10-21
申请号：JP2010122341
申请日：2010-05-28
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/30 , G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed during dry etching processing on a light shield film as compared with a case wherein a conventional photomask blank having a light shield film is used, and to manufacture a mask with higher precision. SOLUTION: The present invention relates to a photomask blank as a material for a photomask provided with a mask pattern having, on a transparent substrate 1, a region which is transparent to exposure light and a region which is effectively opaque, the photomask blank having a light shield film 2 which is laminated on the transparent substrate 1 through or not through another film and can be etched by fluorine-based dry etching and made of metal or a metal compound, an etching mask film 4 which is formed on the light shield film 2 and made of metal or a metal compound having resistance to the fluorine-based dry etching, and an antireflective film 3 formed on the etching mask film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：与使用具有遮光膜的常规光掩模坯料相比，为了减轻由于在干蚀刻处理期间形成的图案的密度依赖性对遮光膜的图案尺寸的变化，并且制造具有更高精度的掩模。解决方案：本发明涉及一种光掩模坯料，其用作具有掩模图案的光掩模的材料，该掩模图案在透明基板1上具有对曝光光透明的区域和有效不透明的区域，光掩模空白具有通过或不通过另一膜层压在透明基板1上的遮光膜2，并且可以通过氟基干蚀刻被蚀刻，由金属或金属化合物制成;蚀刻掩模膜4，其形成在遮光膜2，具有耐氟基干蚀刻性的金属或金属化合物，以及形成在蚀刻掩模膜上的防反射膜3。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009294681A Photomask blank and photomask 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：JP2009294681A
公开(公告)日：2009-12-17
申请号：JP2009218431
申请日：2009-09-24
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/50 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank having a light-shielding film that can be etched without giving a large load on a resist during an etching process and has sufficient chemical stability against a mask cleaning process necessary in the manufacturing process of a photomask, and to provide a photomask having a mask pattern formed thereon by using the above blank. SOLUTION: The photomask blank is a binary mask blank having a light-shielding film comprising a single layer or two or more layers formed directly or with another film interposed on a transparent substrate, and an antireflection film further layered thereon, characterized in that: at least one layer constituting the light-shielding film contains silicon and a transition metal as the main component; the molar ratio of silicon to transition metal is (4 to 15):1 (atomic ratio); and the optical density in the light-shielding film and the antireflection film together to exposure light is not less than 2.5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有遮光膜的光掩模坯料，其可以在蚀刻过程中不会在抗蚀剂上施加大的负载而被蚀刻，并且具有足够的化学稳定性以抵抗制造过程中所需的掩模清洁过程的光掩模，并且通过使用上述坯料来提供其上形成有掩模图案的光掩模。解决方案：光掩模坯料是具有遮光膜的二进制掩模坯料，该遮光膜包括直接形成在其上的单层或两层或更多层，或者在透明基板上插入另一膜，以及其上层叠的防反射膜，其特征在于构成遮光膜的至少一层含有硅和过渡金属作为主要成分; 硅与过渡金属的摩尔比为（4〜15）：1（原子比）并且遮光膜和抗反射膜中的光密度与曝光光一起不小于2.5。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008268980A Method for manufacturing photomask 审中-公开
标题翻译：制造光电子的方法
公开(公告)号：JP2008268980A
公开(公告)日：2008-11-06
申请号：JP2008194460
申请日：2008-07-29
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask with which a fine photomask pattern can be formed with high accuracy. SOLUTION: A resist film 17 is formed on an antireflection layer 13 of a photomask substrate 11 where a light shielding layer 12 and a chromium compound antireflection layer 13 are successively layered. The resist film 17 is required to be relatively thin so as to prevent increase in an aspect ratio, and preferably having a thickness of not more than 350 nm, and preferably not less than 75 nm when the film is made of a general resist material. After the resist film 17 is processed to obtain a resist pattern, the chromium compound antireflection layer 13 is patterned by oxygen-containing chlorine-based dry etching ((Cl+O)-based etching), and subsequently, the light shielding layer 12 having etching durability so as not to substantially cause etching in the oxygen-containing chlorine-based dry etching ((Cl+O)-based etching) is patterned by fluorine-based dry etching (F-based etching). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造可以高精度地形成精细光掩模图案的光掩模的方法。解决方案：在遮光层12和铬化合物防反射层13依次层叠的光掩模基板11的防反射层13上形成抗蚀剂膜17。为了防止长宽比的增加，抗蚀剂膜17需要相对较薄，优选厚度不大于350nm，优选不小于75nm。在抗蚀剂膜17被加工以获得抗蚀剂图案之后，通过含氧氯基干蚀刻（（Cl + O）基蚀刻）对铬化合物抗反射层13进行构图，随后，遮光层12具有通过氟基干法蚀刻（F系蚀刻），对含氧氯系干法蚀刻（（Cl + O）系蚀刻）基本不进行蚀刻的蚀刻耐久性图案化。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2006146152A Photomask blank, photomask and method for manufacturing the same 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2006146152A
公开(公告)日：2006-06-08
申请号：JP2005220587
申请日：2005-07-29
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , FUKUSHIMA YUICHI
IPC分类号： G03F1/32 , G03F1/46 , G03F1/58 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高精度形成在其上的精细光掩模图案的光掩模，并且还提供用于光掩模的光掩模坯料。解决方案：可光屏蔽膜12形成在光学透明基板11的一个主平面上，其中可遮光膜12包括连续层叠的第一可遮光膜13和第二可遮光膜14。第一可遮光膜13是通过氟基（F系）干蚀刻基本上不被蚀刻的膜，主要由氧化铬，氮化铬，氮氧化铬等构成。第二光屏蔽膜14是主要由可以通过F-基干蚀刻蚀刻的含硅化合物，例如氧化硅，氮化硅，氮氧化硅，硅/过渡金属氧化物，硅 /过渡金属氮化物或硅/过渡金属氮氧化物。含硅化合物的组成为10〜95原子％的硅，0〜60at％的氧，0〜57at％的氮和0〜35at％的过渡金属，过渡金属为例如钼 MO）。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005284216A Target for forming film and method for manufacturing phase shift mask blank 审中-公开
标题翻译：用于形成膜的目标和制造相移膜掩模的方法
公开(公告)号：JP2005284216A
公开(公告)日：2005-10-13
申请号：JP2004102288
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI , SAGA TADASHI , OKADA KIMIHIRO , IWAKATA MASAHIDE , HARAGUCHI TAKASHI , FUKUSHIMA YUICHI
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： PROBLEM TO BE SOLVED: To provide a target for forming a film for manufacturing a halftone phase shift mask and its blank which can respond to shorter wavelengths of exposure light and have excellent chemical resistance, and to provide a method for manufacturing the halftone phase shift mask blank.
SOLUTION: The target for forming a film is used to manufacture a halftone phase shift mask blank which has a single-layer or multilayer semitransparent film having a controlled phase and transmittance on a transparent substrate and simultaneously contains a Si element, Mo element and Zr element as structural elements of at least one layer of the semitransparent film, and the target contains at least two elements of Mo and Zr, with 0.05 to 5 molar ratio of the content ratio (Zr/Mo). A halftone phase shift mask and its blank which can respond to shorter wavelengths of exposure light and have excellent chemical resistance and patterning accuracy can be easily obtained by the present invention.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造可以响应较短波长的曝光光并具有优异的耐化学性的半色调相移掩模及其空白的膜的形成目标，并且提供一种制造半色调的方法相移掩模空白。解决方案：用于形成膜的目标用于制造半色调相移掩模板，其具有在透明基板上具有受控相位和透射率的单层或多层半透明膜，并且同时含有Si元素，Mo元素和Zr元素作为至少一层半透明膜的结构元素，并且靶含有Mo和Zr的至少两种元素，含量比（Zr / Mo）为0.05-5摩尔％。通过本发明可以容易地获得能够对较短波长的曝光光进行响应且具有优异的耐化学性和图案精度的半色调相移掩模及其空白。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005156709A Phase shift mask blank, phase shift mask, method for manufacturing phase shift mask blank, and method for transferring pattern 有权
标题翻译：相位移屏蔽区域，相位移屏蔽，用于制造相位移动屏蔽空白的方法以及用于传送图案的方法
公开(公告)号：JP2005156709A
公开(公告)日：2005-06-16
申请号：JP2003392258
申请日：2003-11-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , FUKUSHIMA YUICHI , II TOSHIHIRO , SAGA TADASHI
IPC分类号： G03F1/26 , G03F1/32 , G03F1/60 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/14 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a phase shift mask blank which maintains a sufficient selection ratio for etching in one step of etching process, particularly in dry etching process, which can be etched in easy etching process, and which is advantageous from the viewpoint of facilities and yield in the manufacturing process of a phase shift mask. SOLUTION: The phase shift mask blank has a phase shift film and a transparent film on a transparent substrate. The phase shift film comprises a compound containing a first transition metal element, a second transition metal element different from the first transition metal element, and silicon, with the amount of the second transition metal element smaller than the amount of the first transition metal element and silicon. The transparent film comprises a compound containing a first transition metal element, a second transition metal element and silicon, with the amount of the first transition metal element and silicon smaller than the amount of the second transition metal element and is substantially transparent at the wavelength of exposure light and is disposed adjacent to the transparent substrate side of the phase shift film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种相移掩模坯料，其在蚀刻工艺的一个步骤中特别是在干蚀刻工艺中保持足够的蚀刻选择比，其可以在易蚀刻工艺中进行蚀刻，并且其优点在于在相移掩模的制造过程中的设备和产量的观点。解决方案：相移掩模空白在透明基板上具有相移膜和透明膜。相移膜包括含有第一过渡金属元素，不同于第一过渡金属元素的第二过渡金属元素和硅的化合物，第二过渡金属元素的量小于第一过渡金属元素的量，以及硅。透明膜包括含有第一过渡金属元素，第二过渡金属元素和硅的化合物，其中第一过渡金属元素和硅的量小于第二过渡金属元素的量，并且在波长为曝光光并且被设置在相移膜的透明基板侧附近。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2012003287A Method for manufacturing photo mask, and photo mask 有权
标题翻译：制造照相胶片的方法和照相胶片
公开(公告)号：JP2012003287A
公开(公告)日：2012-01-05
申请号：JP2011205807
申请日：2011-09-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/54 , G03F1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photo mask with higher accuracy compared with the case that a photomask blank having a conventional light shielding film is used in an etching process of a light shielding film, by reducing pattern size variance caused by density dependency of patterns to be formed.SOLUTION: A photo mask is manufactured from a photomask blank having a light shielding film laminated with or without another film on a transparent substrate and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; an anti-reflection film formed on the light shielding film and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; and an etching mask film with a film thickness of 2 to 30 nm formed on the anti-reflection film and composed of a metal or a metallic compound which has resistance to the fluorine-based dry etching. A manufacturing method of the photomask includes resist patterning, chlorine-based dry etching, and fluorine-based dry etching.
摘要翻译：解决问题的方法为了提供一种与遮光膜的蚀刻工艺中使用具有传统的遮光膜的光掩模坯料相比，通过减小图案尺寸的方法，以更高的精度制造光掩模的方法由形成的图案的密度依赖性引起的方差。解决方案：光掩模由具有在透明基板上层叠有或不具有另一膜的遮光膜的光掩模坯料制成，并且由能够通过氟基干蚀刻蚀刻的金属或金属化合物构成; 由遮光膜形成并由可通过氟基干蚀刻蚀刻的金属或金属化合物构成的抗反射膜; 以及形成在抗反射膜上的膜厚度为2〜30nm的蚀刻掩模膜，由具有耐氟基干蚀刻性的金属或金属化合物构成。光掩模的制造方法包括抗蚀剂图案化，氯基干蚀刻和氟基干蚀刻。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2006146151A Photomask blank, photomask and method for manufacturing the same 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2006146151A
公开(公告)日：2006-06-08
申请号：JP2005220562
申请日：2005-07-29
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , FUKUSHIMA YUICHI
IPC分类号： C23C14/06 , G03F1/32 , G03F1/58 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask.
SOLUTION: A light-shieldable film 12 is formed on an optical film 15 such as a halftone phase shift film formed on one principal surface of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is the film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal (such as molybdenum (Mo)) oxide, silicon/transition metal nitride or silicon/transition metal oxynitride.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高精度形成在其上的精细光掩模图案的光掩模，并且还提供用于光掩模的光掩模坯料。解决方案：可光屏蔽膜12形成在诸如形成在光学透明基板11的一个主表面上的半色调相移膜的光学膜15上，其中可遮光膜12包括第一可遮光膜薄膜13和第二可遮光薄膜14。第一可遮光膜13是通过氟基（F系）干蚀刻基本上不被蚀刻的膜，主要由氧化铬，氮化铬，氮氧化铬等构成。第二光屏蔽膜14是主要由可以通过F-基干蚀刻蚀刻的含硅化合物，例如氧化硅，氮化硅，氮氧化硅，硅/过渡金属（如氧化钼（Mo）），硅/过渡金属氮化物或硅/过渡金属氮氧化物。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005284213A Phase shift mask blank, phase shift mask and method for transferring pattern 有权
标题翻译：相位移屏蔽区域，相位移屏蔽和传输模式的方法
公开(公告)号：JP2005284213A
公开(公告)日：2005-10-13
申请号：JP2004102219
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI , SAGA TADASHI , OKADA KIMIHIRO , IWAKATA MASAHIDE , HARAGUCHI TAKASHI , FUKUSHIMA YUICHI
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a phase shift mask blank which can be easily processed to obtain transmittance, reflectance and a phase with higher accuracy, and to provide a phase shift mask using the blank and a method for transferring a pattern.
SOLUTION: The phase shift mask blank is a multilayer phase shift mask blank which has a film mainly having a light absorbing function on a substrate and has one or more layers of films mainly having a phase shift function thereon. The film having the light absorbing function contains a group 4A metal, with the metal content higher in the upper part of the film than in the lower part. When the phase shift mask blank is processed into a phase shift mask, the light absorbing film is easily detected during dry etching in a drying etching process and selectivity against a substrate is advantageously obtained, which results in high-accuracy processing. Thus, a mask having the transmittance and a phase shift with higher accuracy can be obtained, and thereby, a larger focal depth can be kept in photolithography using the mask.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以容易地处理以获得更高精度的透射率，反射率和相位的相移掩模坯料，并且提供使用坯料的相移掩模和用于转印图案的方法。解决方案：相移掩模空白是一种多层相移掩模坯料，其具有在基板上主要具有光吸收功能的膜，并且具有主要具有相移功能的一层或多层膜。具有光吸收功能的膜包含4A族金属，其上部的金属含量高于下部的金属含量。当相移掩模空白处理成相移掩模时，在干蚀刻工艺中的干蚀刻期间容易检测光吸收膜，有利地获得对基板的选择性，这导致高精度的处理。因此，可以获得具有更高精度的透射率和相移的掩模，从而可以使用掩模在光刻中保持较大的焦点深度。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005156700A Phase shift mask blank, phase shift mask, method for manufacturing phase shift mask blank, and method for transferring pattern 审中-公开
标题翻译：相位移屏蔽区域，相位移屏蔽，用于制造相位移动屏蔽空白的方法以及用于传送图案的方法
公开(公告)号：JP2005156700A
公开(公告)日：2005-06-16
申请号：JP2003392178
申请日：2003-11-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , FUKUSHIMA YUICHI , II TOSHIHIRO , SAGA TADASHI
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32
摘要： PROBLEM TO BE SOLVED: To provide a phase shift mask blank having little warpage, excellent chemical resistance and sufficient for practical use in relation to optical characteristics (transmittance, phase difference, reflectance, refractive index or the like) which can not be specified in a single layer film because of problems of film stress or chemical resistance.
SOLUTION: The phase shift mask blank has a phase shift multilayer film on a substrate. The phase shift multilayer film has a low stress layer comprising a compound containing metal and silicon and having ≤400 MPa film stress, and a chemical-resistant layer comprising a compound containing metal and silicon. The chemical-resistant layer is disposed in adjacent to the low stress layer so as to constitute the outermost surface layer of the phase shift multilayer film, and shows such property that when the layer is immersed in an APM (ammonia/hydrogen peroxide/water mixture) prepared by mixing 30 mass% aqueous ammonia, 30 mass% hydrogen peroxide aqueous solution and water by 1:1:8 volume ratio for one hour at 23°C, reduction in the film thickness is ≤1.0 nm.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供相对于不能够的光学特性（透射率，相位差，反射率，折射率等）而言，翘曲变小，耐化学性优异且足够实用的相移掩模坯料由于膜应力或耐化学性的问题，在单层膜中指定。解决方案：相移掩模空白在衬底上具有相移多层膜。相变多层膜具有包含含有金属和硅的化合物并且具有≤400MPa膜应力的低应力层和包含含金属和硅的化合物的耐化学性层。该耐化学层与低应力层相邻设置，以构成相移多层膜的最表面层，并且表现出当将该层浸入APM（氨/过氧化氢/水混合物）通过在23℃下将30质量％氨水，30质量％过氧化氢水溶液和水以1:1比例的体积比混合1小时制备，膜厚度的降低为≤1.0nm。版权所有（C）2005，JPO＆NCIPI

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