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1. 发明专利

JP2001015492A ETCHING DEVICE AND ETCHING MONITORING METHOD 失效
公开(公告)号：JP2001015492A
公开(公告)日：2001-01-19
申请号：JP18642299
申请日：1999-06-30
申请人： SHIBAURA MECHATRONICS CORP , TOSHIBA CORP
发明人： JINBO SADAYUKI , YOSHIMORI HIROAKI , FURUMITO NORISUKE
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching device and its monitoring method that can minimize the loss of an extremely expensive semiconductor element by rapidly finding the film quality change in an object to be etched and the fluctuations of process parameters caused by the failure in the etching device. SOLUTION: This etching device is provided with an etching chamber for etching a wafer by active gas due to plasma discharge, a photoelectric converter for detecting an electromagnetic field that is generated by plasma discharge generated in the etching chamber, and a means for obtaining a characteristic curve signal that successively has unstable, stable, descent, and flat regions, after discharge is started from the output of the photoelectric converter. Monitoring is made, so that a characteristic curve obtained by etching lies within virtual curves A and B with a width of ±Z conforming to a normal etching characteristic curve S, and it is judged that the process parameters have fluctuated, the device has failed, and the quality of an object to be etched is changed, when the characteristic curve deviates from the virtual curve, thus rapidly detecting the failure.

2. 发明专利

JP2002047586A METHOD AND APPARATUS FOR DETECTING END POINT OF ETCHING AND DRY ETCHING SYSTEM PROVIDED WITH THE SAME APPARATUS 失效
公开(公告)号：JP2002047586A
公开(公告)日：2002-02-15
申请号：JP2000229066
申请日：2000-07-28
申请人： SHIBAURA MECHATRONICS CORP
发明人： FURUMITO NORISUKE
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for detecting the end point of etching by which the end point of etching can be detected with high precision and to provide a dry etching system provided with the same apparatus. SOLUTION: In the method for detecting the end point of etching at the time of removing a thin film on the surface of the object S to be treated by dry etching, the intensity of radiant light beams emitted from the whole of the surface of the object S to be treated is detected by a first photosensor 5 at the time of etching, further, the local part in the surface of the object S to be treated in the process of the etching is irradiated with beams the interfering state thereby is detected by a second photosensor 7, and based on the change of the intensity of the radiant light beams and the change of the interfering state, the end point of the etching is detected.

3. 发明专利

JP2001358125A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001358125A
公开(公告)日：2001-12-26
申请号：JP2000178477
申请日：2000-06-14
申请人： SHIBAURA MECHATRONICS CORP
发明人： YOSHIMORI DAIKO , FURUMITO NORISUKE
IPC分类号： B01J19/00 , B01J19/08 , C23C14/52 , C23C16/511 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can detect occurrence of abnormalities, such as vacuum leaks, etc., at an early stage. SOLUTION: This plasma processing apparatus processes an object to be treated W, in a processing chamber 2 maintained in a vacuum atmosphere by utilizing a plasma generated by imparting energy to a processing gas. The device is provided with a photodetector 10 which detects the light emitted from the plasma, a spectroscope 11 which separates the light detected by means of the photodetector 10 into spectral components, and a monitoring means 12, having the function of displaying the luminous intensity distribution obtained by means of the spectroscope 11.

4. 发明专利

JP2012004294A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2012004294A
公开(公告)日：2012-01-05
申请号：JP2010137135
申请日：2010-06-16
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： MATSUI EMI , HAYASHI KONOSUKE , MATSUSHITA ATSUSHI , FURUMITO NORISUKE , TANIO TETSUJI
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which allow uniform etching even when a non-uniform in-plane distribution is present in thickness.SOLUTION: A substrate processing apparatus comprises: a mounting table 22 for holding and rotating a workpiece; an etchant supplying part 6 for supplying an etchant to the workpiece held on the mounting table 22; a measurement part 25 for measuring a thickness of the workpiece supplied with the etchant or a thickness of a film formed on the workpiece supplied with the etchant; and a controlling part 5 for controlling the mounting table 22, the etchant supplying part 6 and the measurement part 25. Based on a result of measurement by the measurement part 25, the controlling part 5 causes the etchant supplying part 6 to supply the etchant to a portion thicker than a predetermined range.
摘要翻译：要解决的问题：提供即使在厚度上存在不均匀的面内分布的情况下也能够均匀地进行蚀刻的基板处理装置和基板处理方法。解决方案：基板处理装置包括：用于保持和旋转工件的安装台22; 用于向保持在安装台22上的工件供应蚀刻剂的蚀刻剂供应部分6; 测量部件25，用于测量供应有蚀刻剂的工件的厚度或形成在被供给蚀刻剂的工件上形成的膜的厚度; 以及用于控制安装台22，蚀刻剂供给部6和测量部25的控制部5.基于测量部25的测量结果，控制部5使蚀刻剂供给部6将蚀刻剂供给到比预定范围厚的部分。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2003147553A METHOD AND DEVICE OF DETECTING END POINT OF ETCHING AND DRY ETCHING SYSTEM 审中-公开
公开(公告)号：JP2003147553A
公开(公告)日：2003-05-21
申请号：JP2001341961
申请日：2001-11-07
申请人： SHIBAURA MECHATRONICS CORP
发明人： FURUMITO NORISUKE
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a method of detecting the end point of etching which can detect the end point of etching with good accuracy and a device for the same and a dry etching system having this device. SOLUTION: The method of detecting the end point of etching which detects the end point of etching in removing the thin film on the surface of an object to be treated comprises detecting the light emission intensity of the radiation light released from the entire part of on the surface of the object S to be treated in etching, integrating the light emission intensity signals obtained in the above manner and detecting the end point of etching in accordance with the change in the light emission intensity signals and to integrated value.

6. 发明专利

JP2002190470A ETCHING APPARATUS 失效
公开(公告)号：JP2002190470A
公开(公告)日：2002-07-05
申请号：JP2000390834
申请日：2000-12-22
申请人： SHIBAURA MECHATRONICS CORP
发明人： FURUMITO NORISUKE
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain end point of optimum etching. SOLUTION: When the end point T3 as a reference of etching ending time is obtained from etching characteristics characteristic of etching by a plasma etching in an etching chamber 2, a specific wavelength light output of the spectrum of an object 10 to be etched is corrected, by the selected spectrum wavelength light output different from the specific output to decide the point T3.

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