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1. 发明专利

JP2014179428A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2014179428A
公开(公告)日：2014-09-25
申请号：JP2013051933
申请日：2013-03-14
申请人： Toshiba Corp , 株式会社東芝 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , OCHIAI TAKAO , YAKUSHIJI KEI , KONOFUJI MAKOTO , KUBOTA HITOSHI , YUASA SHINJI , NOZAKI TAKAYUKI , FUKUSHIMA AKIO
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/10 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To improve characteristics of a magnetoresistive element.SOLUTION: A magnetoresistive element of the present embodiment includes: a first magnetic layer 10 having a variable magnetization direction; a second magnetic layer 11 having an invariable magnetization direction; and a non-magnetic layer 12 provided between the first and second magnetic layers 10, 11 and including a MgFeO film. The MgFeO film contains at least one selected from among Ti, V, Mn and Cu.
摘要翻译：要解决的问题：提高磁阻元件的特性。本实施例的磁阻元件包括：具有可变磁化方向的第一磁性层10; 具有不变磁化方向的第二磁性层11; 以及设置在第一和第二磁性层10,11之间并包括MgFeO膜的非磁性层12。 MgFeO膜含有选自Ti，V，Mn和Cu中的至少一种。

2. 发明专利

JP2014179425A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2014179425A
公开(公告)日：2014-09-25
申请号：JP2013051806
申请日：2013-03-14
申请人： Toshiba Corp , 株式会社東芝 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SHIMOMURA NAOHARU , KITAGAWA EIJI , AMANO MINORU , SAIDA DAISUKE , YAKUSHIJI KEI , NOZAKI TAKAYUKI , YUASA SHINJI , FUKUSHIMA AKIO , IMAMURA HIROSHI , KUBOTA HITOSHI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/155 , G11C11/165 , G11C11/1673 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory capable of avoiding the occurence of a read disturb and having a margin for dispersion and fluctuation of a pulse width of writing and reading.SOLUTION: A magnetic memory includes at least one MTJ element having: a magnetic lamination structure 25 having a first magnetic layer 22 in which the orientation of magnetization is fixed, a second magnetic layer 24 in which the orientation of magnetization is variable, and a tunnel barrier layer 23 provided between the first magnetic layer 22 and the second magnetic layer 24; a first electrode 21 provided on an opposite side to the tunnel barrier layer 23 with respect to the first magnetic layer 22; a second electrode 26 provided on an opposite side to the tunnel barrier layer 23 with respect to the second magnetic layer 24; an insulating film 27 provided on a side face of the magnetic lamination structure; and a control electrode 28 provided on a side face of the magnetic lamination structure 25 via the insulating film 27 and to which a voltage is applied in reading. The voltage applied to the control electrode 28 in reading is a voltage set so as to increase an energy barrier of magnetization reversal of the second magnetic layer 24.
摘要翻译：要解决的问题：提供一种能够避免读取干扰的发生并且具有用于分散和写入和读取的脉冲宽度的波动的余量的磁存储器。解决方案：磁存储器包括至少一个MTJ元件，其具有：磁性层压结构25具有磁化取向固定的第一磁性层22，磁化取向可变的第二磁性层24和设置在第一磁性层22和第二磁性层之间的隧道势垒层23 层24; 相对于第一磁性层22设置在与隧道势垒层23相反的一侧的第一电极21; 相对于第二磁性层24设置在与隧道势垒层23相反的一侧的第二电极26; 设置在磁性层叠结构的侧面上的绝缘膜27; 以及经由绝缘膜27设置在磁性层压结构体25的侧面上并在其中施加电压的控制电极28。在读取中施加到控制电极28的电压是设定为增加第二磁性层24的磁化反转的能量势垒的电压。

3. 发明专利

JP2014053546A Voltage drive spintronics three-terminal element 审中-公开
标题翻译：电压驱动三角形三端元件
公开(公告)号：JP2014053546A
公开(公告)日：2014-03-20
申请号：JP2012198496
申请日：2012-09-10
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NOZAKI TAKAYUKI , MATSUMOTO TOSHIHARU , FUKUSHIMA AKIO , KUBOTA HITOSHI , YAKUSHIJI KEI , YUASA SHINJI , SUZUKI YOSHISHIGE , SEKIYA DAISUKE
IPC分类号： H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To obtain a voltage drive spintronics three terminal element which can be made extremely thin while reducing power consumption, and can produce a large signal output while ensuring stable operation at room temperature.SOLUTION: A voltage drive spintronics three terminal element has a multi-layer film structure sequentially consisting of a ferromagnetic magnetization fixed layer, a nonmagnetic spacer layer, and a ferromagnetic magnetization rotation layer, and exhibiting magneto-resistance effect, and has an electrode layer for voltage application covering any one of the upper surface, lower surface or side face of the magnetization rotation layer entirely, with an insulator layer interposed therebetween. A first terminal, i.e., an input terminal, is connected with the electrode layer for voltage application, a second terminal is connected with the magnetization rotation layer, and a third terminal is connected with magnetization fixed layer.
摘要翻译：要解决的问题：为了获得可以在降低功耗的同时制造得极薄的电压驱动自旋电子三端元件，并且可以在确保室温下稳定运行的同时产生大信号输出。解决方案：电压驱动自旋电子三端元件顺序地由铁磁性磁化固定层，非磁性间隔层和铁磁性磁化旋转层构成的多层膜结构，并具有磁阻效应，并且具有用于施加电压的电极层覆盖上表面，整个磁化旋转层的下表面或侧面，隔着绝缘体层。第一端子即输入端子与用于施加电压的电极层连接，第二端子与磁化旋转层连接，第三端子与磁化固定层连接。

4. 发明专利

JP2013045840A Electrical field ferromagnetic resonance excitation method and magnetic functional element using the same 有权
标题翻译：电磁场共振激发方法及使用其的磁性功能元件
公开(公告)号：JP2013045840A
公开(公告)日：2013-03-04
申请号：JP2011181654
申请日：2011-08-23
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NOZAKI TAKAYUKI , SUZUKI YOSHISHIGE
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , B82Y40/00 , G11B5/147 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/303 , H01L29/66984 , H01L43/08 , H03B15/006
摘要： PROBLEM TO BE SOLVED: To achieve a low power consumption electrical field ferromagnetic resonance excitation method using an electrical field as a driving force, and to provide a spin wave signal generation element, and a spin flow signal generation element using that method, and a logical element using them, and a high frequency detection element and a magnetic functional element such as a magnetic recorder and the like using this method.SOLUTION: For a laminate structure where an ultrathin film ferromagnetic layer 2 thin enough not to cause an electrical field shield effect by conduction electrons, and a magnetic anisotropy control layer 1 are laminated directly, and an insulation barrier layer 3 and an electrode layer 4 are arranged in order on the ultrathin film ferromagnetic layer side, a magnetic field having specific magnetic field application angle and magnetic field intensity is applied. A ferromagnetic resonance is excited efficiently in the ultrathin film ferromagnetic layer by applying an electrical field having a high frequency component of magnetic resonance frequency between the magnetic anisotropy control layer and the electrode layer.
摘要翻译：要解决的问题为了实现使用电场作为驱动力的低功耗电磁场铁磁共振激励方法，并提供自旋波信号生成元件，以及使用该方法的自旋流信号生成元件，以及使用它们的逻辑元件，以及使用该方法的高频检测元件和诸如磁记录器等的磁功能元件。解决方案：对于通过传导电子使薄膜铁氧体层2变薄而不产生电场屏蔽效应的层叠结构，和磁各向异性控制层1直接层压，并且将绝缘阻挡层3和电极层4依次布置在超薄膜铁磁层侧，施加具有特定磁场施加角和磁场强度的磁场。通过在磁各向异性控制层和电极层之间施加具有磁共振频率的高频分量的电场，在超薄膜铁磁层中有效激发铁磁共振。版权所有（C）2013，JPO＆INPIT

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