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1. 发明专利

JP2000208426A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000208426A
公开(公告)日：2000-07-28
申请号：JP985899
申请日：1999-01-18
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TAKANO SATOSHI , NOMURA HISASHI , SAKAI MASANORI
IPC分类号： H01L27/04 , H01L21/205 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, in which an estimating for an HSG film formation step can be carried out in a short time. SOLUTION: A sample 10 made of a polysilicon film 13 deposited on an Si substrate 11 is subjected to a sequence of processes with the same condition as an HSG film forming step on an amorphous silicon film. An increased quantity in film thickness of the polysilicon film 13 before and after the treatment is measured. On the basis of the increased quantity in film thickness, analogy estimation of film quality for an HSG film obtained in a treatment step, in which the HSG film is formed on a substrate with amorphous silicon deposited thereon, is carried out. In addition to this way, a sample with a silicon-based insulating film formed on its surface is subjected to an HSG treatment, and whether silicon is deposited on the insulating film or not is estimated on the basis of an increase in film thickness of the insulating film obtained by converting the thickness of the silicon film into that of the insulating film, thereby estimating base selectivity of the HSG.

2. 发明专利

JP2000195799A SEMICONDUCTOR TREATING METHOD 失效
公开(公告)号：JP2000195799A
公开(公告)日：2000-07-14
申请号：JP36632398
申请日：1998-12-24
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： WATANABE TOMOJI , TAKANO SATOSHI , SAKAI MASANORI , TAGAMI SATORU
IPC分类号： H01L21/205 , H01L21/285 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To reduce the variation in the film formation rate between wafers at an upper and lower stages and in the wafer plane by placing flat wall faces made of the same material down parallel on the tops of the wafers and flowing gases between the wafers and the wall faces of a tube to treat the wafers. SOLUTION: A reaction tube 2 is divided by a partition plate 61 vertically into an upper and lower spaces 62, 63 having approximately the same height. The upper inner wall of the tube 2 faces the upper surface of an upper stage wafer 3a, and the lower surface of the partition plate 61 faces parallel the upper surface of a lower stage wafer 3b. Gases react to deposit a film while they flow between the upper inner wall of the tube 2 and the upper surface of the upper stage wafer 3a and between the lower surface of the partition plate 61 and the upper surface of the lower stage wafer 3b, and then they exhaust from exhaust ports 5a, 5b. The walls facing the upper and lower stage wafers 3a, 3b are made of the same material and have the same surface roughness.

3. 发明专利

JP2000068220A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JP2000068220A
公开(公告)日：2000-03-03
申请号：JP23990498
申请日：1998-08-26
申请人： KOKUSAI ELECTRIC CO LTD
发明人： SAKAI MASANORI , ITAYA HIDEJI , TAKANO SATOSHI
IPC分类号： H01L21/683 , H01L21/22 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To improve the quality of products, and to extend maintenance cycle by preventing a film deposited and accumulated in a reaction tube from being peeled and deposited on a substrate. SOLUTION: In this semiconductor manufacturing device having a substrate susceptor 28 for horizontally holding a substrate 6 to be processed in a reaction chamber 2, a foreign matter shielding board 32 can be held at the upper part of the held position of the substrate to be processed by the substrate susceptor. Thus, even if a film deposited and accumulated in a reaction tube is peeled off at accumulating of a semiconductor film on the substrate to be processed in the reaction chamber, the peeled-off film can be prevented from being deposited on the substrate to be processed by the foreign matter shielding board.

4. 发明专利

JPH10144613A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH10144613A
公开(公告)日：1998-05-29
申请号：JP30285496
申请日：1996-11-14
申请人： KOKUSAI ELECTRIC CO LTD
发明人： NOMURA HISASHI , KASAHARA OSAMU , ITAYA HIDEJI , TAKANO SATOSHI , SAKAI MASANORI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To minimize the internal volume of gas exhaust tubes by a method wherein a reaction tube has a space part in which a treatment object substrate is placed and treated in its center, has two gas introducing tubes through which reactive gas is introduced and, further, has two gas exhaust tubes and valves are provided at positions closest to the reaction tube in the gas exhaust tubes. SOLUTION: A space part in which a treatment object substrate 2 is placed is formed in the center part of a reaction tube 1 which has a flat space. A heater 7 is provided around the reaction tube 1 to heat the inside of the reaction tube 1. Further, exhaust part flanges 6 are provided on both end parts of the reaction tube 1 and two gas introducing tubes 3 through which reactive gas is introduced are attached to the respective exhaust part flanges 6 and, further, two gas exhaust tubes 4 through which the reactive gas after the treatment of the substrate is exhausted are attached to the respective exhaust part flanges 6. Valves 13 and 14 are provided in the piping systems of the respective gas exhaust tubes 4. With this constitution, the backward diffusion of foreign substances through the respective gas exhaust tubes 4 can be suppressed and the foreign substances can be reduced and contamination can be avoided.

5. 发明专利

JP2000260712A APPARATUS FOR MANUFACTURING SEMICONDUCTOR 失效
公开(公告)号：JP2000260712A
公开(公告)日：2000-09-22
申请号：JP5791299
申请日：1999-03-05
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TAKANO SATOSHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To improve the product quality and the yield by suppressing uncontrollable film thickness growth and improving film thickness control accuracy, in a film forming process for manufacturing a semiconductor. SOLUTION: In a single-water processing semiconductor manufacturing apparatus having a substrate-receiving table 11, a residual component absorbing region Z is formed at least on the upstream side of a processed substrate 10 which is placed on the table 11, the upstream side being in the direction in which a reaction gas flows. The region Z is arranged so as to be included in a soaking region T. Residual components are adhered and deposited on the region Z, thereby preventing the residual components from depositing on the substrate 10 to be treated in the form of a film.

6. 发明专利

JP2000332215A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000332215A
公开(公告)日：2000-11-30
申请号：JP13681399
申请日：1999-05-18
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TAKANO SATOSHI
IPC分类号： G01B11/30 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To form clear production control standard by quantifying the quality of a HSG(hemispherical grain) film, after HSG treatment. SOLUTION: A surface form of a substrate W after HSG treatment is image- sensed with an image sensing means 20, and image data are obtained. Gradation of pixels constituting the image is expressed completely in two colors with a image processing means 23. A pixel of one color is made to correspond to a part, where the substrate surface is protruded by the HSG treatment, and a pixel of the other color is made to correspond to a part, where the substrate surface is recessed by the HSG treatment. On the basis of the ratio of pixels corresponding to the part where the substrate surface is protruded by the HSG treatment to the pixels of the whole image, an estimating means 24 estimates the ratio of parts where the substrate surface is protruded by the HSG treatment to the whole surface of the substrate.

7. 发明专利

JP2000323557A MANUFACTURE OF SEMICONDUCTOR AND APPARATUS THEREFOR 失效
公开(公告)号：JP2000323557A
公开(公告)日：2000-11-24
申请号：JP13448599
申请日：1999-05-14
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ITAYA HIDEJI , TAKANO SATOSHI , YAMAMOTO KATSUHIKO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To make the quality of processed substrate uniform by arranging two substrate for processing in a reaction chamber in such a way that their mirror surfaces are opposed to each other, and depositing semiconductor films thereon, whereby film forming processing conditions are made uniform for both the upper and lower substrate for processing. SOLUTION: A first wafer 12 is transferred into a substrate processing chamber unit 22, and placed on an upper plate 11 of a wafer support table 10 in such a way that a mirror surface 12a of the first wafer 12 faces downward on the plate 11. Further, concurrently with the inversion of the first wafer 12 in a substrate inverting chamber unit, a second wafer 12 is extracted from a wafer cassette using a robot arm, and the second wafer 12 is placed on a lower plate 11 of the table 10 in the unit 22 in such a way that a mirror surface 12a thereof faces upward. Thus, the mirrors 12a of the first and second wafers 12 are opposed to each other. Semiconductor films are deposited under this condition.

8. 发明专利

JPH11186167A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH11186167A
公开(公告)日：1999-07-09
申请号：JP34829197
申请日：1997-12-17
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TAKANO SATOSHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of particles due to back diffusion from a reaction chamber when the reaction chamber is evacuated. SOLUTION: A semiconductor manufacturing device is provided with a pump 2b which is connected to a reaction chamber 1 through piping and evacuates the chamber 1; a reactor line 4 which is connected to the reaction chamber 1 through the piping, is provided with a second change-over valve AV2, a flow regulator which regulates the flow rate of a reaction gas, and a first change- over valve AV1 from the reaction chamber 1 side, and supplies the reaction gas to the reaction chamber 1; and a bent line 5 which is connected between the second change-over valve AV2 of the reactor line 4 on the reaction chamber 1 side and the flow regulator through a pipeline connected with a third change- over valve AV3 and is also connected to a pump 2a for evacuation. The reaction chamber 1 is evacuated by closing the second change-over valve AV2 and opening the third change-over valve AV3 of the bent line 5.

9. 发明专利

JPH1154598A WAFER SUSCEPTOR 失效
公开(公告)号：JPH1154598A
公开(公告)日：1999-02-26
申请号：JP21183297
申请日：1997-08-06
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ITAYA HIDEJI , TAKANO SATOSHI
IPC分类号： H01L21/683 , H01L21/205 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To reduce the amount of friction between a wafer and a wafer support point upon thermal distortion of the wafer, by providing a plurality of wafer support points in positions shifted from a lattice direction as a wafer deformation start point direction. SOLUTION: Four wafer support points 14 provided on a wafer susceptor 13 comprise support pieces projected in a diametrical direction of an opening 15 inwardly, and the wafer support points 14 are provided in positions shifted from a deformation start point direction of a wafer 1. For example, the support points 14 are provided in respective positions at 0 deg., 90 deg., 180 deg. and 270 deg., from an orientation flat or notch 2 formed in [100] direction of an Si wafer, as a start point. As a result, the support points 14 are shifted from the lattice direction of the wafer 1, i.e., [011] direction 7 or [011] direction 8. Accordingly, the support points do not correspond to the deformation startpoint direction of the wafer 1. By this arrangement, upon elastic deformation of the wafer, the amount of friction of the wafer due to the wafer support points is reduced, thus occurrence of particles can be mitigated.

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