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1. 发明专利

JP2014211440A 表面検査装置およびその方法有权
标题翻译：用于表面检查的装置和方法
公开(公告)号：JP2014211440A
公开(公告)日：2014-11-13
申请号：JP2014113696
申请日：2014-06-02
申请人：株式会社日立製作所 , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/88 , G01B11/02 , G01B11/30 , G01N21/84 , G01N21/956 , H01L21/027
CPC分类号： G01B11/02 , G01B11/30 , G01N21/84 , G01N21/88 , G01N21/95 , H01L21/30
摘要：【課題】半導体製造や磁気ヘッド製造において、被加工対象物(例えば、半導体基板上の絶縁膜)に対してCMPなどの研磨または研削加工を施した際、その表面に生じる様々な形状を有するスクラッチと付着する異物とを弁別して検査することができるようにした表面検査装置およびその方法を提供することにある。【解決手段】本発明は、研磨または研削された絶縁膜の表面に発生したスクラッチや異物に対してほぼ同じ光束で落射照明と斜方照明とを行い、該落射照明時と斜方照明時との間において浅いスクラッチと異物とから発生する散乱光強度の変化を検出することによって浅いスクラッチと異物とを弁別し、さらに、前記落射照明時における散乱光の指向性を検出することによって線状スクラッチと異物とを弁別することを特徴とする表面検査方法およびその装置である。【選択図】図1
摘要翻译：要解决的问题：提供一种表面检查装置和表面检查方法，该表面检查装置和表面检查方法可以鉴别出附着在外部材料上的处理物体（例如，半导体基板上的绝缘体膜）的表面上出现的各种形状的划痕在半导体制造和磁头制造中对被处理物进行抛光或研磨处理（例如CMP）进行检查。本发明的表面检查方法对划痕和外来物进行表面照明和倾斜照明在具有大致相等的光通量的抛光或接地绝缘体膜的表面上发生的材料，并且检测由外部光照时间和倾斜照明时间之间的浅划痕和异物产生的散射光的强度变化，从而区分来自异物的浅划痕。该方法通过检测外照射时间中的散射光的方向性来进一步鉴别异物的线性划痕。还提供了该方法的设备。

2. 发明专利

JP2006201179A Surface inspection device and its method 有权
标题翻译：表面检测装置及其方法
公开(公告)号：JP2006201179A
公开(公告)日：2006-08-03
申请号：JP2006028261
申请日：2006-02-06
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA YOJI
IPC分类号： G01N21/956 , G01B11/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection device and its method where a scratch, having various shapes occurring on the surface of a processed object (for example, an insulating film on a semiconductor substrate) and an adhering foreign substance are discriminated and inspected, when the processed object is polished or ground through CMP or the like, in the manufacturing of semiconductors or of magnetic heads. SOLUTION: In the surface inspection method and its device, epi-illumination and oblique illumination are applied to the scratch and the foreign substance occurring on the surface of the polished or ground insulating film with substantially the same luminous flux, a shallow scratch and foreign substance are discriminated by detecting variation of the intensity of the scattered light generated from the shallow scratch and foreign substance between the epi-illumination and oblique illumination, and a linear scratch and foreign substance are discriminated, by detecting the directivity of the scattered light in the epi-illumination. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题：提供一种表面检查装置及其方法，其中在加工对象（例如半导体基板上的绝缘膜）的表面上出现各种形状的刮痕和附着的异物为通过CMP等对被处理物进行抛光或研磨时，在半导体或磁头的制造中进行鉴别和检查。解决方案：在表面检查方法及其装置中，外露照明和倾斜照明被施加到具有基本上相同的光通量的抛光或接地绝缘膜的表面上产生的划痕和异物，浅划痕通过检测从外部照明和倾斜照明之间的浅划痕和异物产生的散射光的强度的变化来区分外来物质，并且通过检测散射光的方向性来区分线性划痕和异物在epi照明。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008261893A Inspection apparatus 有权
标题翻译：检查装置
公开(公告)号：JP2008261893A
公开(公告)日：2008-10-30
申请号：JP2008205955
申请日：2008-08-08
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA YOJI
IPC分类号： G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection apparatus which enables an inspection discriminating between scratches, which are generated on a surface and have various shapes, and foreign substances sticking to the surface when a polishing or grinding like CMP etc. is performed on an object to be processed (for example, an insulation film on a semiconductor substrate) in semiconductor manufacture or magnetic head manufacture, and to provide its method. SOLUTION: The inspection apparatus is characterized by the followings. Epi illumination and oblique illumination with almost the same luminous flux are applied on the scratches and foreign substances generated on the polished or grinded surface of the insulation film. Discrimination between shallow scratches and the foreign substances is performed by detecting variations in the intensities of scattered light arising from the shallow scratches and foreign substances during the epi illumination and oblique illumination, further, discrimination between linear scratches and the foreign substances is performed by detecting the directivity of the scattered light during the epi illumination. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种表面检查装置，其能够进行检查，以区分在表面上产生并具有各种形状的划痕和当像CMP等的研磨或研磨时粘附到表面的异物在半导体制造或磁头制造中对被处理物体（例如，半导体衬底上的绝缘膜）进行，并提供其方法。
解决方案：检查装置的特征如下。 Epi照明和具有几乎相同光通量的倾斜照明被施加在在绝缘膜的抛光或研磨表面上产生的划痕和异物上。通过检测在epi照明和倾斜照明期间由浅刮痕和异物产生的散射光的强度的变化来进行浅痕迹和异物之间的区别，此外，通过检测线性划痕和异物来区分线性划痕在epi照明期间散射光的方向性。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2013174599A Device and method for surface inspection 有权
标题翻译：用于表面检查的装置和方法
公开(公告)号：JP2013174599A
公开(公告)日：2013-09-05
申请号：JP2013076050
申请日：2013-04-01
申请人： Hitachi Ltd , 株式会社日立製作所 , Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/956 , G01N21/88 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection device and a surface inspection method, which can discriminate scratches in various shapes occurring on a surface of a processed object (for example, an insulator film on a semiconductor substrate) from foreign materials attached to the processed object, and perform inspection when the processed object is subjected to polishing or grinding processing such as CMP, in semiconductor manufacturing and magnetic head manufacturing.SOLUTION: The surface inspection method of the present invention performs epi-illumination and oblique illumination on scratches and foreign materials occurring on a surface of a polished or ground insulator film with substantially equal light flux, and detects a change in intensity of scattered light generated from shallow scratches and the foreign materials between the epi-illumination time and the oblique illumination time to thereby discriminate the shallow scratches from the foreign materials. The method further discriminates linear scratches from the foreign materials by detecting the directivity of the scattered light in the epi-illumination time. The device for the method is also provided.
摘要翻译：要解决的问题：提供一种表面检查装置和表面检查方法，该表面检查装置和表面检查方法可以鉴别出附着在外部材料上的处理物体（例如，半导体基板上的绝缘体膜）的表面上出现的各种形状的划痕在半导体制造和磁头制造中对被处理物进行抛光或研磨处理（例如CMP）进行检查。本发明的表面检查方法对划痕和外来物进行表面照明和倾斜照明在具有大致相等的光通量的抛光或接地绝缘体膜的表面上发生的材料，并且检测由外部光照时间和倾斜照射时间之间的浅划痕和异物产生的散射光的强度变化，从而区分来自异物的浅划痕。该方法通过检测外照射时间中的散射光的方向性来进一步鉴别异物的线性划痕。还提供了该方法的设备。

5. 发明专利

JP2009192541A Defect inspection device 有权
标题翻译：缺陷检查装置
公开(公告)号：JP2009192541A
公开(公告)日：2009-08-27
申请号：JP2009125763
申请日：2009-05-25
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection apparatus for discriminably inspecting a scratch having various shapes occurring on the surface and an adhering foreign substance, when polishing or grinding such as CMP (Chemical Mechanical Polishing) is applied to a workpiece (for example, an insulation film on a semiconductor substrate), in manufacturing a semiconductor or a magnetic head. SOLUTION: In this surface inspection method and apparatus, epi-illumination and slanting illumination are applied to the scratch and the foreign substance occurring on the surface of the polished or ground insulation film with substantially the same light flux, a shallow scratch and a foreign substance are discriminated by detecting variation of the scattered light intensity generated from the shallow scratch and foreign substance between the epi-illumination time and slanting illumination time. Further, a linear scratch and a foreign substance are discriminated by detecting the directivity of the scattered light during the epi-illumination. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种表面检查装置，用于区分地检查在表面上发生的各种形状的刮痕和粘附的异物，当将CMP（化学机械抛光）的抛光或研磨施加到工件上时例如半导体衬底上的绝缘膜），制造半导体或磁头时。解决方案：在这种表面检查方法和装置中，对抛光或接地绝缘膜的表面上产生的划痕和异物施加外照射和倾斜照明，具有基本上相同的光通量，浅划痕和通过检测在外部照射时间和倾斜照明时间之间从浅划痕和异物产生的散射光强度的变化来区分异物。此外，通过在外照明期间检测散射光的方向性来区分线性划痕和异物。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2005017145A Sample dimension measuring method and charged particle beam device 有权
标题翻译：样品尺寸测量方法和充电颗粒光束装置
公开(公告)号：JP2005017145A
公开(公告)日：2005-01-20
申请号：JP2003183715
申请日：2003-06-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： WATANABE KENJI , OTAKA TADASHI , NAKAGAKI AKIRA , SHISHIDO CHIE , TAKAHASHI MASAKAZU , TOYOSHIMA YUYA
IPC分类号： G01B11/24 , G01B15/04 , G01N21/47 , G01N23/225 , H01J37/28 , H01L21/66
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for efficiently executing two measurements by an optical measuring device and a scanning electron microscope. SOLUTION: This method and the device to be provided are characterized by calculating the mean value of dimension values of a plurality of characteristic objects, and calculating an offset value of the dimension value based on the difference between the calculated mean value and the dimension value of the characteristic object acquired when light is irradiated. When measuring the dimension of the first pattern on a semiconductor wafer, the second pattern other than the first pattern is irradiated with light, and its dimension is measured. When the dimension value is a prescribed value or more or exceeds the prescribed value, dimension measurement to the first pattern is executed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过光学测量装置和扫描电子显微镜有效地执行两次测量的方法和装置。解决方案：该方法和要提供的装置的特征在于计算多个特征对象的维度值的平均值，并且基于计算出的平均值和照射光时获得的特征物体的尺寸值。当测量半导体晶片上的第一图案的尺寸时，除了第一图案之外的第二图案用光照射，并测量其尺寸。当尺寸值为规定值以上或超过规定值时，执行对第一图案的尺寸测量。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004219343A Method of measuring three-dimensional profile of detailed pattern 有权
公开(公告)号：JP2004219343A
公开(公告)日：2004-08-05
申请号：JP2003008998
申请日：2003-01-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHISHIDO CHIE , NAKAGAKI AKIRA , TANAKA MAKI , WATANABE KENJI , TOYOSHIMA YUYA
IPC分类号： G01B15/00 , G01N21/956 , G06K9/00 , G06T7/00 , H01J37/22 , H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , G01N21/956 , G06T7/0004 , G06T2207/30148 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To measure the three-dimensional profile of an arbitrary detailed pattern on a semiconductor device. SOLUTION: The cross-sectional profile information of a test pattern is measured with an optical type measuring mechanism and the electron beam image of an arbitrary pattern is acquired with the electron microscope. By combining planar information and cross-sectional profile information of the arbitrary pattern acquired with the electron beam image, three-dimensional profile of the arbitrary pattern is measured. COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2004158478A Method and system for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和系统
公开(公告)号：JP2004158478A
公开(公告)日：2004-06-03
申请号：JP2002319833
申请日：2002-11-01
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAKAGAKI AKIRA , WATANABE KENJI , TOYOSHIMA YUYA , SHISHIDO CHIE , TAKAGI YUJI , TANAKA MAKI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/3205 , H01L21/66 , H01L23/544
CPC分类号： G03F7/70683 , H01L22/20 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method and a system by which a semiconductor device can be manufactured by making the high-speed evaluation of the manufacturing process of a hyperfine actual circuit pattern possible by utilizing a three-dimensional measuring technique using an optical scatterometric instrument. SOLUTION: In the method, the product of the semiconductor device is manufactured by forming a test pattern and an actual circuit pattern through a prescribed semiconductor manufacturing process. The semiconductor manufacturing process is evaluated with respect to the actual circuit pattern of the product by measuring the feature of the three-dimensional form of the test pattern formed in the product by using the optical scatterometric instrument. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以通过利用三维测量技术使超高精度实际电路图案的制造过程高速评估可以制造半导体器件的方法和系统，该三维测量技术使用光散射仪。解决方案：在该方法中，通过规定的半导体制造工艺形成测试图案和实际电路图案来制造半导体器件的产品。通过使用光学散射仪测量产品中形成的测试图案的三维形状的特征，对产品的实际电路图案进行半导体制造工艺的评估。版权所有（C）2004，JPO

9. 发明专利

JP2010080969A Method and apparatus for observation of sample 有权
标题翻译：用于观察样品的方法和装置
公开(公告)号：JP2010080969A
公开(公告)日：2010-04-08
申请号：JP2009265869
申请日：2009-11-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OBARA KENJI , TAKAGI YUJI , SHIMODA ATSUSHI , NAKAGAKI AKIRA , ISOGAI SHIZUSHI , OZAWA YASUHIKO , BABA HIDEHARU , WATANABE KENJI , SHISHIDO CHIE
IPC分类号： H01L21/66 , G01N21/956 , H01J37/22
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for observation of a sample by which, upon detailed inspection of a defective part of the sample by means of magnification or the like, the amount of stage movement is reduced as little as possible to shorten image acquiring time thereby effectively observing defects. SOLUTION: The method for observation of the sample includes the steps of: acquiring a reference image not including a defect of the sample by imaging the sample on the basis of information of the defect of the sample detected by an inspection device; adjusting a position of the sample on the basis of the information of the defect of the sample detected by the inspection device so that the defect comes in sight of imaging; acquiring a defect image including the defect of the sample by imaging the sample whose position has been adjusted; detecting the defect in the defect image by comparing the reference image and the defect image; acquiring a magnified image of the defect by imaging a partial region including the detected defect in the sight of imaging; and displaying the magnified image of the defect on a screen. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于观察样品的方法和装置，通过这种方法和装置，通过借助于放大率等对样品的缺陷部分进行详细检查后，台架移动量减少到少至可能缩短图像获取时间，从而有效地观察缺陷。解决方案：用于观察样本的方法包括以下步骤：基于由检查装置检测到的样本的缺陷的信息，通过对样本进行成像来获取不包括样本缺陷的参考图像; 基于由检查装置检测到的样本的缺陷的信息来调整样本的位置，使得缺陷进入成像; 通过对已经调整了位置的样本进行成像来获取包括样本缺陷的缺陷图像; 通过比较参考图像和缺陷图像来检测缺陷图像中的缺陷; 通过在成像的视觉中成像包括检测到的缺陷的部分区域来获取缺陷的放大图像; 并在屏幕上显示缺陷的放大图像。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009092673A Review sem 有权
标题翻译： REVIEW SEM
公开(公告)号：JP2009092673A
公开(公告)日：2009-04-30
申请号：JP2008332085
申请日：2008-12-26
申请人： Hitachi Ltd , Renesas Eastern Japan Semiconductor Inc , 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
发明人： NOZOE MARI , NISHIYAMA HIDETOSHI , HIJIKATA SHIGEAKI , WATANABE KENJI , ABE KOJI
IPC分类号： G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device and method for observing, inspecting, and distinguishing inspected and detected surface irregularities, shape defects, foreign matters, further, electrical defects, or the like, quickly and precisely using an identical device by applying white light, laser beams, and electron beams to a substrate surface having a circuit pattern in a semiconductor device, or the like, and to move to a position to be observed, to capture an image, and to automatically perform classification. SOLUTION: When specifying the position to be observed on a sample and applying electron beams for forming an image, based on the position information of a defect inspected and detected by other inspection apparatus, observation of electrical defects that can be conducted with a potential contract by designating electron beam irradiation conditions, detectors, detection conditions, and the like, according to the types of defects to be observed. The acquired images are automatically classified by an image processing section, and the results are added to a defect file to output. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于使用相同的装置快速且精确地观察，检查和区分检查和检测的表面凹凸，形状缺陷，异物，进一步的电气缺陷等的检查装置和方法通过将白光，激光束和电子束施加到具有半导体装置等中的电路图案的基板表面，并且移动到要观察的位置，以捕获图像，并且自动执行分类。解决方案：当指定要在样品上观察的位置并施加用于形成图像的电子束时，基于由其他检查装置检查和检测的缺陷的位置信息，观察可以用根据要观察的缺陷的类型，通过指定电子束照射条件，检测器，检测条件等来进行潜在的合同。所获取的图像由图像处理部分自动分类，并将结果添加到缺陷文件以输出。版权所有（C）2009，JPO＆INPIT

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