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1. 发明专利

JPH07161685A DRY ETCHING METHOD 失效
公开(公告)号：JPH07161685A
公开(公告)日：1995-06-23
申请号：JP30772293
申请日：1993-12-08
申请人： HITACHI LTD , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANAKA SHIGEHISA , NISHIMURA SHINJI , TAKANO HIDEAKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable a micro-region to be selectively dry-etching high in controllability by a method wherein a micro-mask formed by selectively removing a part of a semiconductor multilayered structure composed of various semiconductor thin films formed on a semiconductor substrate is used. CONSTITUTION:A GaAs layer of multilayered structure and composed of a GaAs layer 1 and an AlGaAs layer 2 both grown on a GaAs substrate 4 is partially, selectively removed with etchant of hydrogen peroxide-ammonia for the formation of a comblike micro-mask 3. When an AlGaAs layer 8 grown on a GaAs substrate 7 is dry-etched through the comblike micro mask 3, only a radical hydrogen beam 6 passing through openings provided in the micro-mask 3 reaches the AlGaAs layer 8 to selectively etch a micro-region and reacts with AlGaAs, whereby micro holes 9 can be formed. By this setup, a micro- region can be selectively dry-etched high in controllability.

2. 发明专利

JPH07161636A SELECTIVE GROWING METHOD 失效
公开(公告)号：JPH07161636A
公开(公告)日：1995-06-23
申请号：JP30772393
申请日：1993-12-08
申请人： HITACHI LTD , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANAKA SHIGEHISA , NISHIMURA SHINJI , TAKANO HIDEAKI
IPC分类号： H01L21/203 , H01L29/06
摘要： PURPOSE:To accurately perform selective growing in a fine area by growing crystal by using a mask formed by selectively removing a part of a semiconductor multilayer structure formed of a plurality of semiconductor thin films of different types. CONSTITUTION:A part of a multilayer structure GaAs layer 2 formed by growing a GaAs layer 2 and an AlGaAs layer 1 on a substrate 4 is selectively removed and a comb-shaped extremely fine mask is formed. The Ga and As molecular beams 6 are applied on the GaAs substrate 7 from an Ga and As molecular beam source 5 using the mask, and molecular beam epitaxial growing is performed. Since only the molecular beams that pass through the opening reach the substrate, fine wires 8 that have extremely fine width are selectively crystal-grown in an extremely fine area depending on the shape of the opening. Then, a molecular beam is emitted from a source arranged in a direction different from the molecular beam 5 so as to bury the fine wire structure to form a quantum wire structure.

3. 发明专利

JPH07142386A SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07142386A
公开(公告)日：1995-06-02
申请号：JP28786793
申请日：1993-11-17
申请人： HITACHI LTD , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANAKA SHIGEHISA , NISHIMURA SHINJI , TAKANO HIDEAKI
IPC分类号： H01L21/20 , H01L21/02 , H01L27/12 , H01L27/15
摘要： PURPOSE:To provide a highly reliable semiconductor substrate which is free from characteristic deterioration and wherein two kinds of semiconductor substrates of different material qualities are bonded each other. CONSTITUTION:The title semiconductor substrate is formed by bonding an Si substrate 2 which is a first semiconductor substrate and a second semiconductor substrate (an InP substrate 3, a GaAs substrate 4) whose material quality differs from that of the substrate 2 by a thin film layer of a layer-like substance wherein layers are bonded each other by van der Waals force like GaSe 1, and a proper semiconductor element is provided on each substrate. As the thin film layer, layer-like chalcogen compound such as GaS, MoS2, MoSe2 or Se, Te, etc., are used in addition to the GaSe 1.

4. 发明专利

JPH09138375A SELF-HOLDING TYPE OPTICAL MODULATING ELEMENT 失效
公开(公告)号：JPH09138375A
公开(公告)日：1997-05-27
申请号：JP29647595
申请日：1995-11-15
申请人： HITACHI LTD
发明人： TAKANO HIDEAKI , KITAJIMA SHIGEKI , MATSUI YUICHI , INOUE HIROAKI
IPC分类号： G02F1/015 , H01S3/10
摘要： PROBLEM TO BE SOLVED: To reduce the power consumption regarding modulation state holding and give self-holding performance to even a small-sized element by connecting at least one electrode of an optical modulating element which controls light to a power source through a resistance switch. SOLUTION: The principle of an increase in resistance by the resistance switch 18 is applied when a modulation state is held. For the purpose, the electrode of the optical modulating element is connected to the driving power source 3 through the resistance switch 18. Namely, the resistance of the resistance switch 18 is made small to connect the electrode to the driving power source 3 and then when the state is held, the resistance of the resistance switch 18 is made large to disconnect the driving power source 3. Consequently, the rise/ fall time can be made longer than when the resistance becomes large. Therefore, the duty ratio of a pulse voltage needed to hold the modulation state is made less than 50% and the power consumption regarding the modulation state holding can be lowered.

5. 发明专利

JPH08162708A OPTICAL SEMICONDUCTOR AMPLIFIER 失效
公开(公告)号：JPH08162708A
公开(公告)日：1996-06-21
申请号：JP30184694
申请日：1994-12-06
申请人： HITACHI LTD
发明人： KANETAKE TATSURO , TAKANO HIDEAKI , OHIRA MASATERU , SUZUKI MAKOTO
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE: To obtain an optical semiconductor amplifier wherein a large saturated output value and a high gain are obtained satisfatorily and its optical coupling to such a transmission medium as an optical fiber is made easy. CONSTITUTION: An optical semiconductor amplifier which has an optical gain for the light of a wavelength to be used and has an optical waveguide including an active layer 15 having an identical structure over its whole region and varies the optical gain per unit length of the optical waveguide according to the traveling direction of the light.

6. 发明专利

JP2015015848A 自立電源システム有权
标题翻译：自动电源系统
公开(公告)号：JP2015015848A
公开(公告)日：2015-01-22
申请号：JP2013141840
申请日：2013-07-05
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： FUJIMORI TSUKASA , GOTO YASUSHI , KURATA HIDEAKI , TAKANO HIDEAKI
IPC分类号： H02J7/00 , H02J15/00
CPC分类号： H02J7/345 , H02J7/0013 , H02J7/0054 , H02J7/0055 , H02J7/0063 , H02J7/007 , H02J7/35 , H02J2007/0067
摘要：【課題】発電素子の発電量が小さい場合でも、発電制御回路を短時間で起動させ、負荷装置へ短時間で電力を供給すること。【解決手段】自立電源システム1は、発電素子2の発電効率を制御する発電制御回路4と、発電素子2で発電した電力を充電する蓄電素子群C1〜C6と、蓄電素子群の充電動作と放電動作を制御する充電制御回路5を備える。蓄電素子群は、発電制御回路4と充電制御回路5に電力を供給する1次蓄電素子C1と、負荷装置10に電力を供給する2次蓄電素子C2〜C5を有する。発電素子2で発電した電力は1次蓄電素子C1に優先して充電された後、1次蓄電素子C1から2次蓄電素子C2〜C5に充電される。1次蓄電素子C1の容量値は、2次蓄電素子C2〜C5の容量値よりも小さくする。【選択図】図1
摘要翻译：要解决的问题：即使在发电元件的发电量小的情况下，通过在短时间内激活发电控制电路，也能够在短时间内向负载装置供电。解决方案：自主供电系统1包括：用于控制发电元件2的发电效率的发电控制电路4; 对由发电元件2产生的电力进行充电的C1〜C6的蓄电元件组; 以及用于控制蓄电元件组的充电操作和放电操作的充电控制电路5。蓄电元件组包括：用于向发电控制电路4和充电控制电路5供电的主蓄电元件C1; 以及用于向负载装置10供电的二次蓄电元件C2〜C5。一次电力存储元件C1优先用发电元件2产生的电力充电，之后二次蓄电元件C2〜C5为从主蓄电元件C1充电。主蓄电元件C1的容量值被设定为小于二次蓄电元件C2〜C5的容量值。

7. 发明专利

JP2013093397A Thermoelectric conversion composite material, thermoelectric conversion material paste using the same, and thermoelectric conversion module using the same 有权
标题翻译：热电转换复合材料，使用其的热电转换材料浆料和使用其的热电转换模块
公开(公告)号：JP2013093397A
公开(公告)日：2013-05-16
申请号：JP2011233584
申请日：2011-10-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： FUJIEDA TADASHI , SAWAI YUICHI , NAITO TAKASHI , AOYAGI TAKUYA , YAMAMOTO HIROTAKA , TAKANO HIDEAKI
IPC分类号： H01L35/14 , C01G31/02 , H01L35/16 , H01L35/18 , H01L35/22 , H01L35/32 , H02N11/00
CPC分类号： H02S40/44 , C03C3/122 , C03C3/21 , C03C8/08 , C03C8/14 , H01L35/16 , H01L35/22 , H01L35/32 , H01L35/34 , Y02E10/60
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion composite material which allows for manufacture of a thermoelectric conversion element exhibiting high characteristics even if a low cost process is used, and to provide a thermoelectric conversion material paste using the composite material, and a low cost high efficiency thermoelectric conversion module.SOLUTION: The composite thermoelectric conversion material is a thermoelectric conversion composite material produced by compounding a semiconductor thermoelectric conversion material and a binding material. The binding material is semiconductor glass of the same polarity as that of the semiconductor thermoelectric conversion material, and the semiconductor glass is lead-free glass containing vanadium oxide when the component is represented by an oxide, and having a softening point of 480°C or lower.
摘要翻译：要解决的问题：提供一种热电转换复合材料，其允许制造即使使用低成本工艺也具有高特性的热电转换元件，并且使用该复合材料提供热电转换材料浆料，以及一种低成本的高效热电转换模块。＆lt; P＆gt;解决方案：复合热电转换材料是通过配合半导体热电转换材料和结合材料制备的热电转换复合材料。结合材料是与半导体热电转换材料相同极性的半导体玻璃，当该组分由氧化物表示并且软化点为480℃时，半导体玻璃是含有氧化钒的无铅玻璃或降低。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013027183A Storage circuit 审中-公开
标题翻译：存储电路
公开(公告)号：JP2013027183A
公开(公告)日：2013-02-04
申请号：JP2011160442
申请日：2011-07-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ASAI KENGO , ISOBE ATSUSHI , OSADA KENICHI , GOTO YASUSHI , TAKANO HIDEAKI
IPC分类号： H02J7/00 , H01M10/44
CPC分类号： H02J7/34 , H01G5/38 , H01G5/40 , H01H59/0009
摘要： PROBLEM TO BE SOLVED: To provide a storage circuit with a power generation element, capable of achieving more stable power storage or a stable power supply system with at least two circuits.SOLUTION: The storage circuit (900) includes a first capacitor (C1) connected with a power generation element (300) through a first diode (D1) and a second capacitor (C2) connected with the power generation element through the second diode (D2) and a switch (S1). A conduction state of the switch is controlled by a potential difference (driving voltage V) between a second electrode and a third electrode so that a driving voltage obtained when the switch reaches a conductive state is larger than that obtained when the switch reaches a non-conductive state.
摘要翻译：要解决的问题：提供具有能够实现更稳定的蓄电的发电元件的存储电路或具有至少两个电路的稳定的电源系统。解决方案：存储电路（900）包括通过第一二极管（D1）与发电元件（300）连接的第一电容器（C1）和通过第二电容器连接到发电元件的第二电容器（C2）二极管（D2）和开关（S1）。开关的导通状态由第二电极和第三电极之间的电位差（驱动电压V）控制，使得当开关达到导通状态时获得的驱动电压大于当开关达到非导通状态时获得的驱动电压，导电状态。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011196966A Inertia sensor 审中-公开
标题翻译： INERTIA传感器
公开(公告)号：JP2011196966A
公开(公告)日：2011-10-06
申请号：JP2010067202
申请日：2010-03-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHOJI MINAMI , TAKUBO CHISAKI , GOTO YASUSHI , TEI KIGEN , YAMANAKA KIYOKO , TAKANO HIDEAKI
IPC分类号： G01P15/125 , B81B3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To solve the problem of a risk wherein a displacement amount of a movable mass body cannot be measured appropriately because of disturbance vibrations and shock in a high-sensitivity (narrow gap) capacitance type inertia sensor capable of moving a detection electrode without fixing the detection electrode to a substrate.SOLUTION: A fixed section (25A) is provided opposite to a movable detection electrode (21A), and the movable detection electrode (21A) is displaced and then fixed mechanically.
摘要翻译：要解决的问题为了解决由于能够移动检测电极的高灵敏度（窄间隙）电容型惯性传感器中的干扰振动和冲击而不能适当地测量可移动质量体的位移量的风险的问题而不将检测电极固定到基板上。解决方案：固定部分（25A）设置成与可动检测电极（21A）相对，并且可移动检测电极（21A）移位，然后机械地固定。

10. 发明专利

JP2010000556A Integrated micro electromechanical system and its manufacturing method 有权
标题翻译：一体化微机电系统及其制造方法
公开(公告)号：JP2010000556A
公开(公告)日：2010-01-07
申请号：JP2008160342
申请日：2008-06-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HANAOKA HIROKO , TAKANO HIDEAKI , FUJIMORI TSUKASA
IPC分类号： B81B3/00 , B81C1/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing technique providing a smaller and higher density integrated MEMS (Micro Electro Mechanical System) in integrated MEMS manufacturing technology for integrating a semiconductor integrated circuit and MEMS.
SOLUTION: The MEMS is formed on an integrated circuit that processes a MEMS sensor signal. The MEMS has an intermediate moving part 120 comprising a weight 121, a beam 122, and a surrounding void 123, the intermediate moving part being formed by etching of an upper side sacrifice layer 130 and a lower side sacrifice layer 110. The outermost hole of etching holes 141 (micro pores) contributing to forming an upper side void 131 is positioned on an inner side than the outermost hole of etching holes 124 or a void 123 contributing to forming a lower side void 111. The difference between the etching areas of the upper sacrifice layer and the lower side sacrifice layer is thereby made smaller, enabling to enhance etching accuracy and providing a downsizing and higher density.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造技术，在集成半导体集成电路和MEMS的集成MEMS制造技术中提供更小和更高密度的集成MEMS（微机电系统）。解决方案：MEMS处理MEMS传感器信号的集成电路上形成MEMS。 MEMS具有包括重物121，梁122和周围空间123的中间移动部分120，中间移动部分通过蚀刻上侧牺牲层130和下侧牺牲层110而形成。最外面的孔有助于形成上侧空隙131的蚀刻孔141（微孔）位于比蚀刻孔124的最外侧的孔的内侧或有助于形成下侧空隙111的空隙123的位置。从而能够使上牺牲层和下侧牺牲层更小，能够提高蚀刻精度，提供小型化和高密度化。版权所有（C）2010，JPO＆INPIT

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