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1. 发明专利

JP2004327604A Semiconductor device, its manufacturing method, and semiconductor module 有权
公开(公告)号：JP2004327604A
公开(公告)日：2004-11-18
申请号：JP2003118531
申请日：2003-04-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MOCHIZUKI KAZUHIRO , OBE ISAO , TAGAMI TOMONORI , TAKUBO CHISAKI , TANAKA KENICHI
IPC分类号： H01L21/331 , H01L21/60 , H01L21/8222 , H01L23/12 , H01L25/04 , H01L25/18 , H01L27/082 , H01L29/417 , H01L29/423 , H01L29/737
CPC分类号： H01L27/0823 , H01L29/41708 , H01L29/42304 , H01L29/7371 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/16152 , H01L2924/19105 , H01L2924/00 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor device suitable for a small power amplifier module which restrains high frequency property variation at a low cost. SOLUTION: In a monolithic microwave integrated circuit (MMIC) using a hetero-junction bipolar transistor (HBT), via holes are arranged on an emitter, a base and a collector, respectively, and one of them is arranged on a position which faces the HBT at a rear surface of the MMIC. Surface electrodes of an MMIC substrate side in the via holes which are arranged on positions except the position which faces the HBT at the rear surface of the MMIC are arranged being in contact with the MMIC substrate, respectively. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2017116474A 加速度センサ、受振器および地震探査システム审中-公开
公开(公告)号：JP2017116474A
公开(公告)日：2017-06-29
申请号：JP2015254352
申请日：2015-12-25
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： KAMADA YUDAI , ISOBE ATSUSHI , SAKUMA NORIYUKI , SHIODA TAKASHI , TAKUBO CHISAKI
IPC分类号： G01P15/13 , G01C9/06 , G01P15/08 , G01P15/125 , G01V1/18 , G01V1/28
CPC分类号： G01P15/08 , G01P15/125 , G01P15/13 , G01V1/18 , G01V1/28
摘要：【課題】高感度で低消費電力な加速度センサ、受振器および地震探査システムを提供する。【解決手段】加速度センサは、回転軸14に対して変位可能な質量体11を備える。質量体11は、第1可動部21と、第1可動部21より面積が大きい第2可動部22と、を有する。加速度センサは、第1可動部21の第1対称領域23に対向配置された第1ACサーボ制御用電極33と、第2可動部22の第2対称領域24に対向配置された第2ACサーボ制御用電極34と、第2可動部22の非対称領域25に対向配置されたDCサーボ制御用電極35と、を有する。そして、第1可動部21と第1ACサーボ制御用電極33とによって第1ACサーボ容量素子(43)が形成され、第2可動部22と第2ACサーボ制御用電極34とによって第2ACサーボ容量素子(44)が形成され、第2可動部22とDCサーボ制御用電極35とによってDCサーボ容量素子45が形成される。【選択図】図1

3. 发明专利

JP2012042228A Micro-electromechanical system and manufacturing method thereof 有权
标题翻译：微机电系统及其制造方法
公开(公告)号：JP2012042228A
公开(公告)日：2012-03-01
申请号：JP2010181108
申请日：2010-08-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKUBO CHISAKI , TEI KIGEN
IPC分类号： G01P15/125 , G01C19/56 , G01C19/5747 , G01C19/5769 , G01P15/18
CPC分类号： G01P15/125 , B81B3/001 , G01C19/5747 , G01P15/0802 , G01P2015/0814 , G01P2015/0837 , G01P2015/0874 , G01P2015/088 , G02B26/0841 , G02B26/105 , H01G5/18 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L27/13 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technology capable of restricting that a movable section composing micro-electromechanical system (MEMS) is firmly fixed to other members.SOLUTION: Projection forming holes 111 are prepared so as to penetrate a support substrate 112S, and polysilicon films 114 which are conductive materials, are buried into the projection forming holes 111 through silicon oxide films 113, and projection parts 115 are formed by making a part of the polysilicon films 114 protrude toward a movable part 101 side from the projection forming holes 111. Namely, the projection parts 115 are formed by making the polysilicon films 114 protrude to the movable part 101 side from the projection forming holes 111.
摘要翻译：要解决的问题：提供能够限制组成微机电系统（MEMS）的可移动部分牢固地固定到其他部件的技术。＆lt; P＆gt;解决方案：制备突出形成孔111以穿透支撑衬底112S，并且作为导电材料的多晶硅膜114通过氧化硅膜113埋入突出形成孔111中，并且突出部115由使多晶硅膜114的一部分从突起形成孔111朝向可动部101侧突出。即，通过使多晶硅膜114从突出形成孔111突出到可动部101侧而形成突起部115。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011196966A Inertia sensor 审中-公开
标题翻译： INERTIA传感器
公开(公告)号：JP2011196966A
公开(公告)日：2011-10-06
申请号：JP2010067202
申请日：2010-03-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHOJI MINAMI , TAKUBO CHISAKI , GOTO YASUSHI , TEI KIGEN , YAMANAKA KIYOKO , TAKANO HIDEAKI
IPC分类号： G01P15/125 , B81B3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To solve the problem of a risk wherein a displacement amount of a movable mass body cannot be measured appropriately because of disturbance vibrations and shock in a high-sensitivity (narrow gap) capacitance type inertia sensor capable of moving a detection electrode without fixing the detection electrode to a substrate.SOLUTION: A fixed section (25A) is provided opposite to a movable detection electrode (21A), and the movable detection electrode (21A) is displaced and then fixed mechanically.
摘要翻译：要解决的问题为了解决由于能够移动检测电极的高灵敏度（窄间隙）电容型惯性传感器中的干扰振动和冲击而不能适当地测量可移动质量体的位移量的风险的问题而不将检测电极固定到基板上。解决方案：固定部分（25A）设置成与可动检测电极（21A）相对，并且可移动检测电极（21A）移位，然后机械地固定。

5. 发明专利

JPH07111436A SURFACE ACOUSTIC WAVE DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH07111436A
公开(公告)日：1995-04-25
申请号：JP25396693
申请日：1993-10-12
申请人： HITACHI LTD
发明人： HINODE KENJI , TAKUBO CHISAKI , HONMA YOSHIO
IPC分类号： H03H9/145 , H03H9/25
摘要： PURPOSE:To prevent the loss of an element and to attain long service life by applying a chemical compound between a material for an interdigital electrode and a high melting point metal to a crystal grain border of the material for the interdigital electrode. CONSTITUTION:A grain boundary 11 forming a pure Al thin film is distributed onto a 36 rotation Y-cut Z propagation crystal substrate 2 by the resistance heat vapor-deposit method. The inside of the vapor deposition device is made vacuum and heat treatment is applied, then the crystal grains are grown and the grain boundary 12 is arranged to be penetrated in the broadwise direction of the film. The vapor-deposition device coats a tungsten W film 13. When the film is heat-treated under a nitrogen gas environment, a chemical compound region 15 is formed onto the Al grain particle boundary with priority. Thus, the service life is improved in the order of 3 digits with same input power and the durability is improved by 1 digit or over as input power giving the same service life in comparison with those of the usual crystal. Since the surface of the electrode is converted by a high melting point metal W and then heat treatment is conducted, they are reacted in the vicinity of the crystal grain boundary of the electrodes and the movement of atoms at an element operating temperature takes place through the crystal grain boundary and even when a metal W not reacted is removed, the metal atom movement is suppressed in the metal W remaining in the grain field to attain long service life.

6. 发明专利

JPH08111628A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH08111628A
公开(公告)日：1996-04-30
申请号：JP24750894
申请日：1994-10-13
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , TAKUBO CHISAKI
IPC分类号： H03H9/25 , H03H9/64
摘要： PURPOSE: To obtain the surface acoustic wave device with a low loss whose operating frequency is 4GHz or over. CONSTITUTION: A comb-line electrode 2 made of a metallic film whose major constituent is aluminum is formed on a θ deg. rotation Y-cut lithium niobate single crystal piezoelectric substrate 1 (-15

7. 发明专利

JPH10164007A SURFACE ACOUSTIC WAVE SIGNAL PROCESSOR FOR SPREAD SPECTRUM COMMUNICATION 失效
公开(公告)号：JPH10164007A
公开(公告)日：1998-06-19
申请号：JP31907796
申请日：1996-11-29
申请人： HITACHI LTD
发明人： HIKITA MITSUTAKA , TAKUBO CHISAKI , SHIBAGAKI NOBUHIKO , SAKIYAMA KAZUYUKI
IPC分类号： H03H9/145 , G06G7/195 , H03H9/42 , H03H9/72 , H04B1/707 , H04B1/7093 , H04J13/00
摘要： PROBLEM TO BE SOLVED: To eliminate the need of a replica generation circuit and to provide the output signal of a large level by independently inputting a spread spectrum signal and a non-modulation signal to a SAW(surface acoustic wave) delay element, taking products in an external mixer and weighting the output of the mixer in accordance with a code string. SOLUTION: Two transducers for SAW excitation 15 and 18 are formed on a piezoelectric substrate 1 and transducers 16-1, 16-2, 19-1 and 19-2 receiving excited SAW from them and inversely converting them into electric signals again are formed. For compensating phase fluctuation by a temperature, a second auxiliary delay element is prepared in addition to a first delay element. Phase delay from the reception transducers 19-1 and 19-2 when the continuous wave of a frequency (f) is inputted to the excitation transducer 18 of the second delay element is obtained. When the mixer is connected to both outputs and the difference (f3 =f1 -f2 ) of both frequencies is outputted, the temperature is compensated by the second auxiliary delay element.

8. 发明专利

JPH11112467A RF SIGNAL PROCESSOR FOR CDMA COMMUNICATION USING SAW 失效
公开(公告)号：JPH11112467A
公开(公告)日：1999-04-23
申请号：JP27079897
申请日：1997-10-03
申请人： HITACHI LTD
发明人： HIKITA MITSUTAKA , TAKUBO CHISAKI , ASAI KENGO , SHIBAGAKI NOBUHIKO , OKAZAKI KATSUNORI
IPC分类号： H03H9/42 , H03H9/72 , H04B1/707 , H04B1/708 , H04B1/7093 , H04J13/00
摘要： PROBLEM TO BE SOLVED: To demodulate the spread spectrum signal of high efficiency without requiring a generation circuit, or the like of a replica signal by inputting two high frequency signals to two surface acoustic wave(SAW) delay element, mixing respective output signal by a mixer and taking out the output signal of the frequency of difference. SOLUTION: Concerning a first delay element, a transducer 15 for SAW excitation and transducers 16-1 to 16-N for reception are formed at a piezoelectric substrate 1. Concerning a second delay element, a transducer 18 for SAW excitation and transducers 19-1 to 19-N for reception are formed at a piezoelectric substrate 1. The spread spectrum signal of a frequency fRF is inputted from a first input terminals 14. The nonmodulation continuous waves of a frequency fLO is inputted from a second input terminals 17. Each output signal from each delay element is mixed by mixers 20-1 to 20-N to obtain the output signals O(1) to O(N) of the frequency |fRF-fLO|of difference.

9. 发明专利

JP2000216707A SAW SIGNAL PROCESSOR AND SPREAD SPECTRUM COMMUNICATIONS EQUIPMENT 失效
公开(公告)号：JP2000216707A
公开(公告)日：2000-08-04
申请号：JP1800599
申请日：1999-01-27
申请人： HITACHI LTD
发明人： TAKUBO CHISAKI , HIKITA MITSUTAKA , ASAI KENGO , SHIBAGAKI NOBUHIKO
IPC分类号： H03H9/44 , H04B1/707 , H04B1/7073
摘要： PROBLEM TO BE SOLVED: To suppress multiple reflections for prevention of generation of ripples, to make output signal levels equal to improve the accuracy of an added value and to obtain an accurate output by providing the output terminal of each receiving transducer with an attenuator and connecting capacity between ground potential. SOLUTION: Reflection is eliminated, signal level is improved and the output level of each mixer 8 is made equal, by providing the output terminals of respective receiving transducers 4 and 7 of delay elements 11-1 and 11-2 for surface acoustic waves(SAW), respectively inputting a spread spectrum signal and a non-modulation signal f2 with attenuators 13 and 15 for matching to a mixer 8. Capacitors 14 and 16 are also connected to the output terminals of the respective transducers 4 and 7 to make them electrically grounded by grounding one end, multiple reflections between the transducers is suppressed, and ripples in a main lobe band are prevented. Furthermore, the differences in signal levels and phase rotations due to the path difference between excitation transducers 3 and 6 are reduced as much as possible, by adjusting the capacitors 14 and 16 and the attenuators 13 and 15.

10. 发明专利

JPH10126208A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH10126208A
公开(公告)日：1998-05-15
申请号：JP27926696
申请日：1996-10-22
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , ASAI KENGO , TAKUBO CHISAKI
IPC分类号： H03H9/25
摘要： PROBLEM TO BE SOLVED: To enable high-frequency operation and to obtain a good conforming article rate by the use of existing photolithography technique by specifying cut surfaces of lithium niobate single crystal and lithium tantalate single crystal. SOLUTION: For lithium niobate, an X-cut substrate of single crystal is so set that 95 =0.5μm at a high frequency of, for example, 2.4GHz. Then the existing photolithography technique can be used.

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