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1. 发明专利

JP2005300553A Defect inspection device and method 有权
标题翻译：缺陷检查装置和方法
公开(公告)号：JP2005300553A
公开(公告)日：2005-10-27
申请号：JP2005172304
申请日：2005-06-13
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device and method, capable of improving detection sensitivity and throughput by realizing, at the detecting of defects, such as a foreign matter generated in a manufacturing process for forming a pattern on a substrate to produce an object, a linear high-efficiency lighting from a direction on which no diffracted light from the pattern is incident in order to reduce the diffracted light, and setting a threshold according to the dispersion of signals by patterns. SOLUTION: Scattered light, from the pattern that causes dispersion of signals, is reduced by a high-efficiency lighting optical system, lighting from a direction reducing the scattered light from the pattern, and the detection threshold is reduced by a means which sets the threshold, based on the dispersion of signals calculated each area within a chip, whereby improvement in the detection sensitivity and improvement in throughput are realized. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种缺陷检查装置和方法，其能够通过在检测诸如在用于在基板上形成图案的制造工艺中产生的异物等缺陷的检测来提高检测灵敏度和生产率为了产生物体，从不存在来自图案的衍射光入射的方向的线性高效照明，以便减少衍射光，并根据图案的信号色散设置阈值。解决方案：通过高效率照明光学系统减少来自引起信号色散的图案的散射光，从减少来自图案的散射光的方向进行照明，并且通过以下方式减少检测阈值：基于芯片内每个区域计算的信号的色散设置阈值，从而实现检测灵敏度的提高和吞吐量的提高。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004177284A Defect inspecting apparatus and defect inspection method 有权
公开(公告)号：JP2004177284A
公开(公告)日：2004-06-24
申请号：JP2002344327
申请日：2002-11-27
申请人： Hitachi Electronics Eng Co Ltd , Hitachi Ltd , 日立電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： UTO YUKIO , NOGUCHI MINORU , NISHIYAMA HIDETOSHI , OSHIMA YOSHIMASA , HAMAMATSU REI , JINGU TAKAHIRO , NAKADA TOSHIHIKO , WATANABE MASAHIRO
IPC分类号： G01N21/956 , G01N21/95 , G06T7/00
CPC分类号： G01N21/00 , G01N21/9501 , G06T7/0004 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To provide a defect inspecting apparatus and its method for sensitively and quickly inspecting defects, such as minute foreign particles, flaws, etc. of the order of 0.1μm on an inspection substrate, such as a wafer having a transparent thin film on a surface, a wafer having a circuit pattern, etc. SOLUTION: The defect inspecting apparatus is provided with an illumination optical system 10 for irradiating an illumination light flux on a surface of the inspection substrate 1 at a determined tilt angle and a detection optical system 200, having an upward detection optical system 20 for detecting upwardly reflected and scattered light which is emitted upwardly from the inspection substrate 1 and a lateral detection optical system 600 for detecting the lateral reflected scattered light emitted from the inspection substrate 1, in a direction inclined with respect to the direction for two-dimensionally intersecting the illumination light flux. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2003098111A METHOD FOR INSPECTING DEFECT AND APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003098111A
公开(公告)日：2003-04-03
申请号：JP2001288013
申请日：2001-09-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , HAMAMATSU REI , WATANABE KENJI , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01B11/30 , G01B11/24 , G01N21/956 , G06T1/00 , G06T7/60 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve the problem that it takes an enormous amount of time to analyze detected foreign objects when the number of detected objects by an inspecting apparatus is large, leading to a delay in taking countermeasures against failures of a manufacturing process while a total number of detected objects is outputted as the detected result of the foreign object defect-inspecting apparatus and the countermeasure against failures of the manufacturing process is taken by analyzing foreign objects/defects detected by the inspecting apparatus conventionally. SOLUTION: In the defect inspecting apparatus which inspects by an optical system, failure causes are related to sizes of foreign objects or defects in the result, and a data processing means points out the failure cause from statistics of the inspection result and displays information on the inspection result. A threshold where a semiconductor wafer or the like becomes defective is set for each region of the semiconductor wafer or the like, and a defect analysis is carried out by statistically evaluating foreign objects.

4. 发明专利

JP2003035680A Inspection method for semiconductor device 有权
标题翻译：半导体器件检测方法
公开(公告)号：JP2003035680A
公开(公告)日：2003-02-07
申请号：JP2001222405
申请日：2001-07-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI
IPC分类号： G01N23/225 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67271 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： PROBLEM TO BE SOLVED: To apply a technique for enhancing the operating efficiency of an inspection when various conditions required for the inspection are set in the technique for inspecting a fine circuit pattern by using an image formed by irradiating white light, laser beam or electron beam. SOLUTION: An inspection apparatus for a semiconductor device is provided with a function by which a plurality of parameters of the inspection apparatus can be automatically set by using design data on the semiconductor device.
摘要翻译：要解决的问题：在通过使用通过照射白光，激光束或电子束形成的图像来设置用于检查精细电路图案的技术中，在检查所需的各种条件下，应用用于提高检查的操作效率的技术。解决方案：一种用于半导体器件的检查装置具有通过使用半导体器件上的设计数据能够自动设置检查装置的多个参数的功能。

5. 发明专利

JP2002310932A METHOD AND SYSTEM OF MONITORING SEMICONDUCTOR DEVICE TREATMENT DEVICE 审中-公开
公开(公告)号：JP2002310932A
公开(公告)日：2002-10-23
申请号：JP2002026239
申请日：2002-02-04
申请人： HITACHI LTD
发明人： MORIOKA HIROSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , KENBO YUKIO
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a foreign-body inspection apparatus by which defects in large quantities can be prevented and by which a yield is maintained in the mass-production line of a semiconductor production process. SOLUTION: The method and the system are achieved in such a way that, in the mass production line of the semiconductor production process, the foreign-body inspection apparatus is miniaturized and that the foreign-body inspection apparatus is placed on a conveyance system between the input port and the output port of a treatment device in a semiconductor production line or between treatment devices. The apparatus which detects a foreign body on a repetitive pattern part on a wafer by a refractive index change-type lens array, a spatial filter and a pattern-information removal circuit is provided, and the foreign body on the wafer being conveyed can be inspected. In the mass production line of the semiconductor production process, the foreign body is monitored by a simple monitoring device, the weight of the production line is reduced, and the production cost of the production line can be reduced. Since the monitoring device can perform a real-time sampling operation, it is possible to prevent the defects in large quantities which are fatal to the yield, and an effect to ensure the yield stably is obtained.

6. 发明专利

JP2000105203A DEFECT INSPECTING DEVICE AND METHOD 失效
公开(公告)号：JP2000105203A
公开(公告)日：2000-04-11
申请号：JP20607899
申请日：1999-07-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01B11/30 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly and precisely inspect a defect such as a very small contaminant by calculating dispersion based on signals in a portion with the same circuit patterns formed or in its vicinity, and by extracting a signal indicating the defect such as the very small contaminant out of detected signals based on a threshold set on the basis of a result calculated hereinbefore. SOLUTION: An illumination optical system 100 having a laser beam 101, lenses 102-104, a beam splitter and the like has a precdribed inclination with respect to a main straight line group of a circuit pattern, and an inspected objective substrate 1 is irradiated subtantially orthogonally to a traveling direction of a substrate mounting table 304 for mounting the objective substrate 1. An inspecting optical system 200 detects reflected scattered light provided by a defect such as a contaminant existing on the substrate 1, using image sensors 205, 206 through lenses 201, 203 and a beam aplitter 204, to feed signals to a processing circuit 400. A threshold as a determination reference is set in a defect determining process in the circuit 400 based on a dispersion of the resulting signals, and the signal indicating the defect such as the contaminant is extracted, based on the set threshold.

7. 发明专利

JPH04152545A INSPECTION METHOD OF FOREIGN BODY 失效
公开(公告)号：JPH04152545A
公开(公告)日：1992-05-26
申请号：JP27625390
申请日：1990-10-17
申请人： HITACHI LTD
发明人： MORIOKA HIROSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , KENBO YUKIO , TANIGUCHI YUZO
IPC分类号： G01N21/88 , G01N21/00 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PURPOSE:To prevent defects in large quantities and to maintain a yield by installing a foreign-body monitor which measures, in real time, foreign bodies on a specimen while the specimen is being conveyed in a manufacturing apparatus. CONSTITUTION:At a method to inspect foreign bodies on the face of a specimen when a semiconductor or the like is manufactured, a foreign-body monitor which measures, in real time, the foreign bodies on the specimen 11 during the conveyance of the specimen 11 in a manufacturing apparatus is installed. For example, a product wafer 11 is irradiated with beams of light which is modulated by a pulse light-emitting operation from a high-angle illumination optical system 41 and a low-angle illumination optical system 42; their scattered lights are detected by using a detector 45 using a linear sensor through a polarization plate 44. In addition, their signals are demodulated respectively by using demodulators; a detection output H by means of the high-angle illumination optical system 41 and a detection output L by means of the low-angle illumination optical system 42 are obtained simultaneously. Individual data by repeating the detection output L on the axis of abscissas and by representing the detection output H on the axis of ordinates are classified by using a foreign-body and pattern discrimination curve 47. Thereby, foreign bodies 48 are discriminated from patterns 49.

8. 发明专利

JPH0456245A RISE OF MASS PRODUCTION IN SEMICONDUCTOR MANUFACTURING PROCESS, INSPECTION OF FOREIGN SUBSTANCE IN MASS PRODUCTION LINE AND DEVICE THEREOF 失效
公开(公告)号：JPH0456245A
公开(公告)日：1992-02-24
申请号：JP16574390
申请日：1990-06-26
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , KENBO YUKIO , MORIOKA HIROSHI , YAMAGUCHI HIROSHI , KONO MAKIKO , OSHIMA YOSHIMASA
IPC分类号： H01L21/66
摘要： PURPOSE:To maximize foreign substance detection, analysis and evaluation functions necessary at the rising time of mass production, to reduce a production line at the time of the mass production and to make possible a reduction in the cost of the manufacture of a semiconductor by a method wherein a detection, analysis and evaluation system for foreign substances at the rising time of the mass production is separated from a mass production line and results obtained by the system are monitored by a simple monitoring device only in the mass production line. CONSTITUTION:When the control situation of foreign substances on a material, in a process, on a device and in an environment is evaluated using sampling wafers 401 to 405 at the rising time of mass production in a semiconductor manufacturing process, a detection, analysis and evaluation system 1002 for the foreign substances at the rising time of the mass production is separated from a mass production line and results obtained by the system 1002 are fed-back to the mass production line and are monitored by a simple monitoring device 1001 only in the mass production line. For example, in the above foreign substance detection, analysis and evaluation system 1002, foreign substances on sampling wafers 401 to 405 are detected and thereafter, the kinds of the elements of the foreign substances are analyzed by an STM/ STS 603. The analyzed data is ready-stored in advance as data base and the data base is compared with data on an object to be analyzed. Thereby, the kinds of the elements of the foreign substances are decided.

9. 发明专利

JPH03102249A METHOD AND APPARATUS FOR DETECTING FOREIGN MATTER 失效
公开(公告)号：JPH03102249A
公开(公告)日：1991-04-26
申请号：JP23992889
申请日：1989-09-18
申请人： HITACHI LTD
发明人： KOIZUMI MITSUYOSHI , OSHIMA YOSHIMASA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/027 , H01L21/30
摘要： PURPOSE:To inspect the fine foreign matter on a sample at a high speed by discriminating the same from a pattern by alternately performing the first and second illuminations in a time sharing manner and detecting the scattering beam from an objective body in a time sharing manner in synchronous relation to both illuminations by one photoelectric converter. CONSTITUTION:An oblique illumination system L performing oblique illumination is constituted of a laser beam source 15 and a condensing lens 15b. A vertical illumination system H performing linear vertical illumination (second illumination) is constituted of a laser beam source 1, a condensing lens 21, a cylindrical lens 14, a translucent prism 3, a field lens 4 and an objective lens 6. Detection systems L, H are constituted of a shield plate 18, an image forming lens 16, a unidimensional solid-state imaging device (detector) 20 and a signal processing circuit 300. The scattering beams generated by the illumination systems L, H pass through the objective lens 6, the translucent prism 3 and the shield plate 18 to be formed into an image on the detector 20. The first and second illuminations are performed in a time sharing manner to emit beams in a pulsating manner and, by synchronously detecting the outputs VL, VH of the detector 20, scattering beams due to two kinds of illumination beams can be separated and detected.

10. 发明专利

JPH03102248A METHOD AND APPARATUS FOR DETECTING FOREIGN MATTER 失效
公开(公告)号：JPH03102248A
公开(公告)日：1991-04-26
申请号：JP23992789
申请日：1989-09-18
申请人： HITACHI LTD
发明人： KOIZUMI MITSUYOSHI , OSHIMA YOSHIMASA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/027 , H01L21/30
摘要： PURPOSE:To inspect the fine foreign matter on a sample at a high speed by discriminating the same from a pattern by mounting an optical system wherein the foreign matter on an objective body is emphasized by an oblique illumination means to be detected by the first photoelectric converter and the background on the objective body is emphasized by a vertical illumination means to be detected by the second photoelectric converter and a comparing means. CONSTITUTION:An oblique illumination system L is constituted of a laser beam source 15 and a condensing lens 15b and a vertical illumination system H is constituted of a laser beam source 1, a condensing lens 21, a cylindrical lens 14, a translucent prism 3, a field lens 4 and an objective lens 6. In a detection system L, the scattering beam reflected by a color separation prism 150 is formed into an image by an image forming lens 9 to be taken by a unidimensional solid-state imaging element 20H. A detection system H is constituted of a shield plate 18, an image forming lens 16 and a unidimensional solid-state imaging element 20H. The output signals VL, VH detected by the detectors 20L, 20H are taken out through an analogue comparing and dividing circuit 100, a binarization circuit 101 and an OR circuit 22. By this constitution, the fine foreign matter on an objective body with a pattern can be stably detected with high sensitivity.

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