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1. 发明专利

JP2004177284A Defect inspecting apparatus and defect inspection method 有权
公开(公告)号：JP2004177284A
公开(公告)日：2004-06-24
申请号：JP2002344327
申请日：2002-11-27
申请人： Hitachi Electronics Eng Co Ltd , Hitachi Ltd , 日立電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： UTO YUKIO , NOGUCHI MINORU , NISHIYAMA HIDETOSHI , OSHIMA YOSHIMASA , HAMAMATSU REI , JINGU TAKAHIRO , NAKADA TOSHIHIKO , WATANABE MASAHIRO
IPC分类号： G01N21/956 , G01N21/95 , G06T7/00
CPC分类号： G01N21/00 , G01N21/9501 , G06T7/0004 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To provide a defect inspecting apparatus and its method for sensitively and quickly inspecting defects, such as minute foreign particles, flaws, etc. of the order of 0.1μm on an inspection substrate, such as a wafer having a transparent thin film on a surface, a wafer having a circuit pattern, etc. SOLUTION: The defect inspecting apparatus is provided with an illumination optical system 10 for irradiating an illumination light flux on a surface of the inspection substrate 1 at a determined tilt angle and a detection optical system 200, having an upward detection optical system 20 for detecting upwardly reflected and scattered light which is emitted upwardly from the inspection substrate 1 and a lateral detection optical system 600 for detecting the lateral reflected scattered light emitted from the inspection substrate 1, in a direction inclined with respect to the direction for two-dimensionally intersecting the illumination light flux. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2004184142A Defect inspection method and apparatus therefor 审中-公开
标题翻译：缺陷检查方法及其设备
公开(公告)号：JP2004184142A
公开(公告)日：2004-07-02
申请号：JP2002349357
申请日：2002-12-02
申请人： Hitachi Electronics Eng Co Ltd , Hitachi Ltd , 日立電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , NISHIYAMA HIDETOSHI , OSHIMA YOSHIMASA , JINGU TAKAHIRO , UTO YUKIO
IPC分类号： G01B11/30 , G01N21/956 , G06T1/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To efficiently separate a signal from a pattern from a signal from a defect, in a technique for inspecting a micro circuit pattern using an image formed by irradiation with a white light, a laser beam or an electron beam.
SOLUTION: This inspection apparatus for a semiconductor device is provided with a function for shielding selectively diffracted light of the circuit pattern existing on an object to be inspected.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地将信号与来自缺陷的信号分离，在使用通过用白光照射形成的图像，激光束或电子束的微电路图案的检查技术中。解决方案：该半导体装置的检查装置具有选择存在于待检查对象上的电路图案的衍射光的屏蔽功能。版权所有（C）2004，JPO＆NCIPI

3. 发明专利

JP2004177377A Inspecting method and inspecting apparatus 审中-公开
公开(公告)号：JP2004177377A
公开(公告)日：2004-06-24
申请号：JP2002347134
申请日：2002-11-29
申请人： Hitachi Electronics Eng Co Ltd , Hitachi Ltd , 日立電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , NISHIYAMA HIDETOSHI , OSHIMA YOSHIMASA , JINGU TAKAHIRO , UTO YUKIO
IPC分类号： G01B11/30 , G01N21/88 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/66
CPC分类号： G01N21/8806 , G01N21/94 , G01N21/9501 , G01N21/95623
摘要： PROBLEM TO BE SOLVED: To efficiently separate a signal from a pattern from a signal from a defect, in a technology of inspecting a micro circuit pattern using an image formed by irradiating with a white light, a laser beam, or an electronic beam.
SOLUTION: In this inspecting apparatus 91 of a semiconductor device, a space filter on which a Fourier transformation image of a circuit pattern on an inspected object is printed is disposed in a detection optical system 200, and a diffracted light of the circuit pattern existing on the inspected object is shielded selectively. Using the space filter on which the Fourier transformation image of the pattern on a wafer 1 is printed, a foreign matter and a defect can be detected with high accuracy and high sensitivity.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004093252A Defect inspection device and defect inspection method 有权
公开(公告)号：JP2004093252A
公开(公告)日：2004-03-25
申请号：JP2002252799
申请日：2002-08-30
申请人： Hitachi Electronics Eng Co Ltd , Hitachi Ltd , 日立電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , HAMAMATSU REI , OSHIMA YOSHIMASA , UTO YUKIO , JINGU TAKAHIRO , CHIKAMATSU SHUICHI , YAMASHITA HIROYUKI
IPC分类号： G01N21/956 , G06T1/00 , G06T7/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a device and a method capable of rapidly and accurately inspecting micro foreign matters and pattern defects occurring in a production process in a device manufacturing process in which circuit patterns are formed on a substrate such as a semiconductor device. SOLUTION: According to the inspected object, the angle of illumination radiated to the inspected object is optimized, and the magnification of a detection optical system detecting reflected scattered light from the inspected object is optimized to provide signals from an optical system. From the signals, foreign matters or defects in a plurality of detection pixel sizes are detected and, based on the features thereof, the foreign matters or defects are classified into categories. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2012181209A Defect classification method and apparatus therefor 有权
标题翻译：缺陷分类方法及其设备
公开(公告)号：JP2012181209A
公开(公告)日：2012-09-20
申请号：JP2012134507
申请日：2012-06-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIBUYA HISAE , MAEDA SHUNJI , HAMAMATSU REI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve such a problem that in defect classification of appearance examination, in spite of the needs of adjusting the purity or the accuracy or the both of an important defect to be target values or more, since teaching-type defect classification is conditionally set to improve a classification accuracy rate, it is impossible to respond to such needs.SOLUTION: A defect classification apparatus includes a feature amount extraction unit, a defect classification unit and a classification condition setting unit, the classification condition setting unit has a function for correspondingly teaching a feature amount of a defect and a class of accuracy and a function for designating the priority order of classification, and conditional setting is performed so as to improve an accuracy rate for the classification of high priority.
摘要翻译：要解决的问题：为了解决在外观检查的缺陷分类中的问题，尽管需要将纯度或精度或重要缺陷的两个调整为目标值以上，有条件地设置类型缺陷分类以提高分类准确率，不可能满足这种需求。解决方案：缺陷分类装置包括特征量提取单元，缺陷分类单元和分类条件设置单元，分类条件设置单元具有相应地教导缺陷的特征量和精度等级的功能，执行用于指定分类的优先级顺序的功能，并且执行条件设置，以便提高高优先级分类的准确率。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2003035680A Inspection method for semiconductor device 有权
标题翻译：半导体器件检测方法
公开(公告)号：JP2003035680A
公开(公告)日：2003-02-07
申请号：JP2001222405
申请日：2001-07-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI
IPC分类号： G01N23/225 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67271 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： PROBLEM TO BE SOLVED: To apply a technique for enhancing the operating efficiency of an inspection when various conditions required for the inspection are set in the technique for inspecting a fine circuit pattern by using an image formed by irradiating white light, laser beam or electron beam. SOLUTION: An inspection apparatus for a semiconductor device is provided with a function by which a plurality of parameters of the inspection apparatus can be automatically set by using design data on the semiconductor device.
摘要翻译：要解决的问题：在通过使用通过照射白光，激光束或电子束形成的图像来设置用于检查精细电路图案的技术中，在检查所需的各种条件下，应用用于提高检查的操作效率的技术。解决方案：一种用于半导体器件的检查装置具有通过使用半导体器件上的设计数据能够自动设置检查装置的多个参数的功能。

7. 发明专利

JP2007212479A System and method for defect inspection 有权
标题翻译：缺陷检查系统与方法
公开(公告)号：JP2007212479A
公开(公告)日：2007-08-23
申请号：JP2007122717
申请日：2007-05-07
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , WATANABE TETSUYA
IPC分类号： G01N21/956 , G01B11/30
摘要： PROBLEM TO BE SOLVED: To provide a system and method for defect inspection which can discriminate various shaped scratches from adhered foreign substances, generated on the surface of any processed subject to be inspected, when implementing of grinding or polishing, such as Chemical Mechanical Polishing (CMP) on the processed subject (for example, insulating film on semiconductor substrate) is conducted, in the manufacturing of semiconductor or magnetic head. SOLUTION: The present invention is characterized in that epi-illumination and oblique illumination are applied by using almost the same luminous flux to scratches or foreign substances generated on surface of polished or ground insulating film to discriminate shallow scratches from foreign substances, based on correlation between the times of the epi-illumination and the oblique illumination, such as the intensity ratios of the scattered lights generated from both the shallow scratches and the foreign substances. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于缺陷检查的系统和方法，其可以在实施研磨或抛光时，例如化学品（例如化学品）中区分各种形状的划痕和被检查的待处理物体的表面上产生的附着异物在半导体或磁头的制造中，对加工对象（例如，半导体基板上的绝缘膜）进行机械抛光（CMP）。解决方案：本发明的特征在于，通过对抛光或接地绝缘膜的表面上产生的划痕或异物使用几乎相同的光通量来应用表面照明和倾斜照明，以区别基于异物的浅划痕关于外照明和倾斜照明的时间之间的相关性，例如由浅刮痕和异物产生的散射光的强度比。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006093172A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2006093172A
公开(公告)日：2006-04-06
申请号：JP2004272690
申请日：2004-09-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HAMAMATSU REI , NOGUCHI MINORU
IPC分类号： H01L21/66 , G01N21/956 , G01R31/302
摘要： PROBLEM TO BE SOLVED: To inspect the normal part of a semiconductor device which is formed with such a transparent film as an oxide film or the like on the surface thereof without missing defects while reducing the number of false detections even if images between dies are detected with different brightnesses.
SOLUTION: A semiconductor device manufacturing method manufactures a semiconductor device while monitoring the manufacturing process using information obtained from an inspection performed during the process of manufacturing the semiconductor device, on the mixing of foreign matters onto a substrate which is subjected to a predetermined processing. In the manufacturing method, the mixture of foreign matters onto the substrate is detected by imaging the substrate, obtaining the order of brightness of the image signals obtained from the imaging, and comparing adjacent images for each brightness order to obtain differences.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在其表面上检查形成有诸如氧化膜等的透明膜的半导体器件的正常部分，而不丢失缺陷，同时减少错误检测的数量，即使在以不同的亮度检测死亡。解决方案：一种半导体器件制造方法，其使用从在制造半导体器件的过程中执行的检查获得的信息来监测制造工艺，同时将异物混入到经受预定的衬底的衬底上处理。在制造方法中，通过对基板进行成像，获得从成像得到的图像信号的亮度的顺序，并对每个亮度顺序的相邻图像进行比较来检测异物在基板上的混合，从而获得差异。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2009103508A Defect classification method and device thereof 有权
标题翻译：缺陷分类方法及其设备
公开(公告)号：JP2009103508A
公开(公告)日：2009-05-14
申请号：JP2007273894
申请日：2007-10-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIBUYA HISAE , MAEDA SHUNJI , HAMAMATSU REI
IPC分类号： G01N21/956 , H01L21/66
CPC分类号： G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/9513 , G06T7/0004
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein, although adjustment is needed so that the purity or accuracy or both of an important defect become higher than each target value in detect classification of visual inspection, the need is not satisfied in teaching-type defect classification, because condition is set so that classification correct answer rate becomes enhanced on the average.
SOLUTION: This device includes a characteristic quantity extracting part, a defect classification part, and a classification condition setting part. The classification condition setting part has a function for teaching the characteristic quantity of a defect and the class of a correct answer, in association with each other and a function for designating the order of priority of classification, and sets a condition so that correct answer rate is enhanced in the classification having a high order of priority.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了解决这样的问题，尽管需要进行调整，使得在检查视觉分类中，纯度或精度或重要缺陷两者都高于每个目标值，但在教学中不需要满足类型缺陷分类，因为条件被设置为使得分类正确答案率平均增加。解决方案：该装置包括特征量提取部分，缺陷分类部分和分类条件设置部分。分类条件设定部具有将缺陷的特征量和正确答案的类别相互联系起来的功能和用于指定分类优先级顺序的功能，并且设定条件使得正确的答复率在具有高优先级的分类中得到增强。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2002261139A METHOD FOR MANUFACTURING SEMICONDUCTOR AND ITS SYSTEM 失效
公开(公告)号：JP2002261139A
公开(公告)日：2002-09-13
申请号：JP2001056539
申请日：2001-03-01
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , WATANABE KENJI , MAEDA SHUNJI , KUNI TOMOHIRO , HAMAMATSU REI , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI
IPC分类号： H01L21/66 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor and its system that can support high integration and high-speed by means of monitoring fluctuations due to process variations in a system LSI or the like. SOLUTION: A laser 23 is irradiated on a substrate 1 where a pattern or a film is formed, and variations among chips of reflected light levels fluctuating by fluctuation of process conditions is obtained in a chip group within a wafer, and this fluctuation is monitored within the wafer or among wafers, and thus control over the process conditions in a semiconductor manufacturing can be achieved.

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