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    • 1. 发明专利
    • Inspection apparatus
    • 检查装置
    • JP2008261893A
    • 2008-10-30
    • JP2008205955
    • 2008-08-08
    • Hitachi High-Technologies CorpHitachi Ltd株式会社日立ハイテクノロジーズ株式会社日立製作所
    • ISHIMARU ICHIRONOGUCHI MINORUMORIYAMA ICHIROTANABE YOSHIKAZUHACHIKAKE YASUOKENBO YUKIOWATANABE KENJITSUCHIYAMA YOJI
    • G01N21/956
    • PROBLEM TO BE SOLVED: To provide a surface inspection apparatus which enables an inspection discriminating between scratches, which are generated on a surface and have various shapes, and foreign substances sticking to the surface when a polishing or grinding like CMP etc. is performed on an object to be processed (for example, an insulation film on a semiconductor substrate) in semiconductor manufacture or magnetic head manufacture, and to provide its method. SOLUTION: The inspection apparatus is characterized by the followings. Epi illumination and oblique illumination with almost the same luminous flux are applied on the scratches and foreign substances generated on the polished or grinded surface of the insulation film. Discrimination between shallow scratches and the foreign substances is performed by detecting variations in the intensities of scattered light arising from the shallow scratches and foreign substances during the epi illumination and oblique illumination, further, discrimination between linear scratches and the foreign substances is performed by detecting the directivity of the scattered light during the epi illumination. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种表面检查装置,其能够进行检查,以区分在表面上产生并具有各种形状的划痕和当像CMP等的研磨或研磨时粘附到表面的异物 在半导体制造或磁头制造中对被处理物体(例如,半导体衬底上的绝缘膜)进行,并提供其方法。

      解决方案:检查装置的特征如下。 Epi照明和具有几乎相同光通量的倾斜照明被施加在在绝缘膜的抛光或研磨表面上产生的划痕和异物上。 通过检测在epi照明和倾斜照明期间由浅刮痕和异物产生的散射光的强度的变化来进行浅痕迹和异物之间的区别,此外,通过检测线性划痕和异物来区分线性划痕 在epi照明期间散射光的方向性。 版权所有(C)2009,JPO&INPIT

    • 3. 发明专利
    • METHOD AND SYSTEM OF MONITORING SEMICONDUCTOR DEVICE TREATMENT DEVICE
    • JP2002310932A
    • 2002-10-23
    • JP2002026239
    • 2002-02-04
    • HITACHI LTD
    • MORIOKA HIROSHINOGUCHI MINORUOSHIMA YOSHIMASAKENBO YUKIO
    • G01N21/956H01L21/66
    • PROBLEM TO BE SOLVED: To provide a foreign-body inspection apparatus by which defects in large quantities can be prevented and by which a yield is maintained in the mass-production line of a semiconductor production process. SOLUTION: The method and the system are achieved in such a way that, in the mass production line of the semiconductor production process, the foreign-body inspection apparatus is miniaturized and that the foreign-body inspection apparatus is placed on a conveyance system between the input port and the output port of a treatment device in a semiconductor production line or between treatment devices. The apparatus which detects a foreign body on a repetitive pattern part on a wafer by a refractive index change-type lens array, a spatial filter and a pattern-information removal circuit is provided, and the foreign body on the wafer being conveyed can be inspected. In the mass production line of the semiconductor production process, the foreign body is monitored by a simple monitoring device, the weight of the production line is reduced, and the production cost of the production line can be reduced. Since the monitoring device can perform a real-time sampling operation, it is possible to prevent the defects in large quantities which are fatal to the yield, and an effect to ensure the yield stably is obtained.