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1. 发明专利

JP2014172155A Polishing device and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2014172155A
公开(公告)日：2014-09-22
申请号：JP2013049686
申请日：2013-03-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MATSUO NAONORI , MOCHIZUKI NOBUHIRO , TAKATO CHIKAKO , DAIHO TADASHI
IPC分类号： B24B37/00 , B24B37/34 , H01L21/304
CPC分类号： B24B37/005 , B24B49/12 , B24B57/02
摘要： PROBLEM TO BE SOLVED: To provide a polishing device and a polishing method in which polishing capability of a polishing liquid supplied can be utilized sufficiently by reserving the polishing liquid having sufficient polishing capability after being used for polishing without drainage by a polishing liquid reservoir structure provided on a polishing pad, and a maximum polishing capability with a minimum polishing liquid supply can be obtained by measuring the polishing capability of the polishing liquid and draining quickly the polishing liquid in which the polishing capability is lowered.SOLUTION: A polishing equipment comprises a polishing liquid reservoir structure 10 which reserves a polishing liquid by damming up the polishing liquid on a polishing pad 2, a polishing liquid sensor S which measures a physical quantity relating to freshness of the polishing liquid reserved in the polishing liquid reservoir structure 10, a freshness measurement device 5 which calculates the freshness of the reserved polishing liquid from the physical quantity measured by the polishing liquid sensor S, and a freshness control device 6 which implements control of a polishing liquid supply state and/or control of a polishing liquid reserve state based on the freshness of the polishing liquid obtained by the freshness measurement device 5.
摘要翻译：要解决的问题：提供一种抛光装置和抛光方法，其中通过在抛光使用后抛光所用的研磨液被抛光液储存结构而不需排水，可以充分利用所提供的研磨液的研磨能力，并且通过测量抛光液的研磨能力并迅速排出抛光能力降低的抛光液，可以获得具有最小抛光液体供应的最大抛光能力。抛光设备包括抛光液体储存结构10，其通过在抛光垫2上剔除抛光液来保留抛光液;测量与抛光液储存结构10中保留的研磨液的新鲜度有关的物理量的抛光液传感器S，计算新鲜度的装置5 根据由研磨液传感器S测定的物理量的预定研磨液，以及基于研磨液的新鲜度进行研磨液供给状态的控制和/或控制研磨液储存状态的新鲜度调节装置6 由新鲜度测量装置5获得。

2. 发明专利

JP2014161938A Method for acquiring slide distance distribution on dresser polishing member, method for acquiring slide vector distribution on dresser polishing member, and polishing device 有权
标题翻译：用于获取DRESSER抛光构件上的滑动距离分布的方法，用于在滚筒抛光构件上获取滑动矢量分布的方法和抛光装置
公开(公告)号：JP2014161938A
公开(公告)日：2014-09-08
申请号：JP2013033660
申请日：2013-02-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIMANO TAKAHIRO , TANIGAWA MUTSUMI , MATSUO NAONORI , YAMAGUCHI KUNIAKI , WATANABE KAZUHIDE
IPC分类号： B24B53/00 , B24B37/00
CPC分类号： B24B53/005 , B24B53/017 , B24B53/02
摘要： PROBLEM TO BE SOLVED: To provide a method for acquiring a profile of a high-precision polishing member.SOLUTION: The present method comprises the steps of: multiplying a relative speed of a dresser and a polishing member by a contact time of both to calculate an increment in a slide distance of a dresser; multiplying the calculated increment in the slide distance by at least one correction coefficient to correct the increment in the slide distance; repeatedly adding the corrected increment in the slide distance with a time lapse to calculate the slide distance; and generating a slide distance distribution of the dresser from the obtained slide distance and the position of a calculated point of the slide distance. The at least one correction coefficient includes an uneven correction coefficient established with respect to the calculated point of the slide distance. The uneven correction coefficient is a correction coefficient for making a difference between a scraped quantity at salients and a scraped quantity at recesses formed on the surface of the polishing member, on a profile of the polishing member.
摘要翻译：要解决的问题：提供一种用于获取高精度抛光构件的轮廓的方法。解决方案：本方法包括以下步骤：将修整器和抛光构件的相对速度乘以两者的接触时间以计算修整器的滑动距离的增加; 将计算出的滑动距离的增量乘以至少一个校正系数，以校正滑动距离的增量; 反复添加校正的滑块距离增量，计算滑动距离; 以及从获得的滑动距离和计算出的滑动距离的位置的位置产生修整器的滑动距离分布。所述至少一个校正系数包括相对于计算出的滑动距离的点而建立的不均匀校正系数。不均匀校正系数是用于在抛光构件的轮廓上形成在抛光构件的表面上形成的凹部处的凹部处的刮削量和刮削量之间的差的校正系数。

3. 发明专利

JP2012232366A Polishing method 有权
标题翻译：抛光方法
公开(公告)号：JP2012232366A
公开(公告)日：2012-11-29
申请号：JP2011101051
申请日：2011-04-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： ONO KATSUTOSHI , ISHII YU , MATSUO NAONORI , YAMAGUCHI KUNIAKI
IPC分类号： B24B37/015 , B24B37/00 , H01L21/304
CPC分类号： B24B37/015 , B24B37/042 , B24B37/105 , B24B57/02
摘要： PROBLEM TO BE SOLVED: To reduce the use amount of a polishing liquid without lowering a polishing rate.SOLUTION: This polishing method for polishing a substrate by slidably bringing the substrate into contact with the surface of a polishing pad while supplying a polishing liquid to the surface of the polishing pad includes a step of determining, in advance, a relationship between the supply flow rate of a polishing liquid and a polishing rate at a time when the substrate is polished without controlling the surface temperature of the polishing pad, and a relationship between the supply flow rate of a polishing liquid and a polishing rate at a time when the substrate is polished while controlling the surface temperature of the polishing pad at a predetermined temperature, and a step of continuously supplying the polishing liquid to the surface of the polishing pad while controlling the surface temperature of the polishing pad at the predetermined temperature to obtain a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined temperature so as to be higher than that at a time when the substrate is polished without controlling the surface temperature of the polishing pad.
摘要翻译：要解决的问题：减少抛光液的使用量而不降低抛光速率。解决方案：该抛光方法用于在将抛光液体提供给抛光垫的表面的同时可滑动地使衬底与抛光垫的表面接触而抛光衬底包括以下步骤：预先确定抛光液的供给流量和抛光基板抛光时的抛光速度，而不控制抛光垫的表面温度，以及抛光液的供给流量与抛光速度之间的关系，抛光衬底，同时将抛光垫的表面温度控制在预定温度;以及在将抛光垫的表面温度控制在预定温度的同时，将抛光液连续地供给到抛光垫的表面的步骤，以获得当抛光衬底被抛光同时控制抛光垫a的表面温度时，抛光速率更高使得预定温度高于抛光衬底时的温度，而不控制抛光垫的表面温度。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2006203027A Cmp method, cmp apparatus, and manufacturing method of semiconductor device 有权
标题翻译： CMP方法，CMP装置和半导体器件的制造方法
公开(公告)号：JP2006203027A
公开(公告)日：2006-08-03
申请号：JP2005013734
申请日：2005-01-21
申请人： Ebara Corp , National Institute Of Advanced Industrial & Technology , Nikon Corp , 株式会社ニコン , 株式会社荏原製作所 , 独立行政法人産業技術総合研究所
发明人： TAKADA SHOZO , MATSUO NAONORI , ISHIKAWA AKIRA
IPC分类号： H01L21/304 , B24B37/04 , C11D1/00 , C11D3/14 , C11D3/43 , C11D7/50
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： PROBLEM TO BE SOLVED: To provide a CMP method whereby the organic substances wherewith an interlayer insulating film is impregnated can be removed efficiently therefrom, after residual slurries and polishing residues present on the surface of a substrate are cleaned and removed therefrom by the cleaning liquid containing a surface active agent. SOLUTION: In the CMP method, when cleaning the surface of a substrate by the cleaning liquid containing a surface active agent to remove residual slurries and polishing residues therefrom, an interlayer insulating film 3 is impregnated with organic substances present in the cleaning liquid containing the surface active agent. Therefore, the substrate is cleaned hereafter by an organic solvent or a solution containing the organic solvent to perform the cleaning and removing of the organic substances wherewith the interlayer insulating film 3 is impregnated. While the interlayer insulating film 3 is subjected to a hydrophobic processing, the cleaning and removing are not affected thereby because they use the organic solvent that the organic substances wherewith the interlayer insulating film 3 is impregnated are dissolved and they can be performed. Thereafter, the substrate 1 is dried, and the organic solvent or the solution containing the organic solvent stuck on its surface is removed therefrom. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种CMP方法，其中可以有效地除去其中浸渍有层间绝缘膜的有机物质，在残留的浆料和存在于基材表面上的抛光残余物被清洁和除去之后，通过含有表面活性剂的清洗液。解决方案：在CMP方法中，当通过含有表面活性剂的清洗液清洗基材的表面以除去残留的浆液并抛光残余物时，层间绝缘膜3浸渍在清洗液中存在的有机物质含有表面活性剂。因此，以下用有机溶剂或含有有机溶剂的溶液对基板进行清洗，进行浸渍层间绝缘膜3的有机物的清洗除去。在层间绝缘膜3进行疏水处理的同时，由于使用有机溶剂使层间绝缘膜3浸渍的有机物质溶解，因此清洗除去不受影响，可以进行。此后，将基板1干燥，除去粘附在其表面上的有机溶剂或含有有机溶剂的溶液。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2014172153A Method of measuring surface characteristics of abrasive pad 有权
标题翻译：测量磨料表面特性的方法
公开(公告)号：JP2014172153A
公开(公告)日：2014-09-22
申请号：JP2013049684
申请日：2013-03-12
申请人： Ebara Corp , 株式会社荏原製作所 , Kyushu Institute Of Technology , 国立大学法人九州工業大学
发明人： MATSUO NAONORI , KIMURA KEIICHI , SUZUKI YOSHITOMO , KHAJORNRUNGRUANG PANART , KUSHIDA TAKASHI
IPC分类号： B24B37/34 , B24B37/00 , B24B49/12 , B24B49/18 , G01B11/30 , H01L21/304
CPC分类号： G01N21/4738 , B24B37/20 , B24B49/12 , H01L21/30625 , H01L22/10
摘要： PROBLEM TO BE SOLVED: To provide a method of measuring surface characteristics of an abrasive pad which allows determining whether or not the surface characteristics of an abrasive pad are such as to achieve required polishing performance by measuring surface characteristics of the abrasive pad.SOLUTION: A method of measuring surface characteristics of an abrasive pad 2 for polishing a to-be-polished surface of a substrate by coming in sliding contact with the substrate comprises irradiating the abrasive pad 2 with a laser beam and receiving the scattered light reflected and/or scattered by the abrasive pad 2 through a light-receiving element 32 to obtain an intensity distribution corresponding to a space wavelength spectrum based on the surface characteristics of the abrasive pad 2 by means of optical Fourier transformation and calculating values representing the surface characteristics of the abrasive pad 2 on the basis of the intensity distribution corresponding to two different specified space wavelength ranges.
摘要翻译：要解决的问题：提供一种测量研磨垫的表面特性的方法，其允许确定研磨垫的表面特性是否通过测量研磨垫的表面特性来实现所需的抛光性能。解决方案：A 用于通过与基板滑动接触来抛光待抛光表面的研磨垫2的表面特性的方法包括用研磨垫2照射激光束并接收反射和/或散射的散射光通过研磨垫2通过光接收元件32，以通过光学傅立叶变换获得与基于磨料垫2的表面特性相对应的空间波长谱的强度分布，并计算代表磨料垫的表面特性的值 2基于对应于两个不同特征的强度分布确定的空间波长范围。

6. 发明专利

JP2012148376A Polishing method and polishing apparatus 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2012148376A
公开(公告)日：2012-08-09
申请号：JP2011009612
申请日：2011-01-20
申请人： Ebara Corp , 株式会社荏原製作所
发明人： ONO KATSUTOSHI , MATSUO NAONORI
IPC分类号： B24B37/015 , B24B37/00 , B24B37/013 , B24B49/14 , H01L21/304
CPC分类号： B24B37/015 , B24B37/10
摘要： PROBLEM TO BE SOLVED: To provide a polishing apparatus that polishes a surface to be polished of a substrate while maintaining sufficient polishing speed, and prevents the polished surface from including an unpolished part to obtain a desired polishing profile.SOLUTION: In the polishing method, gas is jetted toward a polishing pad 14a to control the temperature of the polishing pad 14a. During polishing, a jetted gas flow rate and gas jetting direction are PID-controlled to monitor a polishing state of the surface to be polished, and the temperature of the controlled polishing pad 14a is changed before and after a predetermined film thickness is reached.
摘要翻译：要解决的问题：提供一种抛光装置，其在保持足够的抛光速度的同时抛光基板的抛光表面，并且防止抛光表面包括未抛光部分以获得期望的抛光轮廓。解决方案：在抛光方法中，将气体朝向抛光垫14a喷射以控制抛光垫14a的温度。在抛光期间，喷射气体流量和气体喷射方向被PID控制，以监测待抛光表面的抛光状态，并且在达到预定膜厚度之前和之后改变受控抛光垫14a的温度。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2003011066A Polishing tool and manufacturing method therefor 审中-公开
标题翻译：抛光工具及其制造方法
公开(公告)号：JP2003011066A
公开(公告)日：2003-01-15
申请号：JP2001224182
申请日：2001-07-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HIROKAWA KAZUTO , HIYAMA HIROKUNI , WADA TAKETAKA , MATSUO NAONORI
IPC分类号： B24B37/00 , B24B37/20 , B24B37/24 , B24D3/00 , B24D3/02 , B24D3/28 , B24D3/32 , C08J5/14 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing tool capable of obtaining the stability in polishing speed and satisfactory difference in step characteristic and reducing a defect (scratch) occuring on a polishing face of an object to be polished of a semiconductor wafer for various objects to be polished. SOLUTION: This polishing tool polishing the object to be polished through abrasive grains 5 by sliding while pressing the object to be polished is mainly composed of thermoplastic resin 4. Butadiene stylene and a polybutadiene or acrylic rubber MBS resin are preferable as the thermoplastic resin. Here, the polishing tool is a fixed abrasive grain polishing tool containing abrasive grains in the polishing tool or a polishing pad containing non-fixed abrasive grains.
摘要翻译：要解决的问题：提供一种能够获得抛光速度的稳定性和令人满意的步进特性差的研磨工具，并且减少了用于各种物体的半导体晶片抛光对象的抛光面上产生的缺陷（划痕），抛光解决方案：该研磨工具主要由热塑性树脂4组成，通过滑动来研磨通过磨料5抛光的物体。作为热塑性树脂，优选丁二烯和聚丁二烯或丙烯酸橡胶MBS树脂。这里，抛光工具是在抛光工具中含有磨粒的固定磨粒抛光工具或含有非固定磨粒的抛光垫。

8. 发明专利

JP2015041700A 研磨パッドの表面粗さ測定方法有权
标题翻译：测量抛光垫表面粗糙度的方法
公开(公告)号：JP2015041700A
公开(公告)日：2015-03-02
申请号：JP2013172218
申请日：2013-08-22
申请人：株式会社荏原製作所 , Ebara Corp
发明人： MATSUO NAONORI
IPC分类号： H01L21/304 , B24B37/00 , B24B37/11 , B24B37/34 , B24B49/12 , B24B49/18
CPC分类号： B24B49/12 , B24B37/005 , B24B53/017 , G01B11/303
摘要：【課題】研磨性能と強い関連性を示す研磨パッドの表面粗さ指標を測定することができる研磨パッドの表面粗さ測定方法を提供する。【解決手段】研磨パッド2の表面粗さの測定方法であって、レーザー顕微鏡30を用いて研磨パッド表面の画像を取得する工程と、取得した画像内から平均高さより高さの大きな領域のみを選択する工程と、選択された領域のみから表面粗さを算出する工程と、からなる。【選択図】図2
摘要翻译：要解决的问题：提供一种测量抛光垫的表面粗糙度的方法，其可以测量抛光垫的表面粗糙度指数，这与抛光性能密切相关。解决方案：测量表面粗糙度的方法抛光垫2包括以下步骤：通过使用激光显微镜30获取抛光垫的表面的图像; 从所获取的图像中仅选择高于平均高度的区域; 并且仅从所选择的区域计算表面粗糙度。

9. 发明专利

JP2014172154A Apparatus for measurement of surface characteristics of an abrasive pad 有权
标题翻译：用于测量抛光垫表面特性的装置
公开(公告)号：JP2014172154A
公开(公告)日：2014-09-22
申请号：JP2013049685
申请日：2013-03-12
申请人： Ebara Corp , 株式会社荏原製作所 , Kyushu Institute Of Technology , 国立大学法人九州工業大学
发明人： MATSUO NAONORI , KIMURA KEIICHI , SUZUKI YOSHITOMO , KHAJORNRUNGRUANG PANART , KUSHIDA TAKASHI
IPC分类号： B24B37/11 , B24B37/00 , B24B49/12 , B24B49/18 , G01B11/30 , H01L21/304
CPC分类号： G01N21/4738 , B24B37/005 , G01B11/303
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for measurement of surface characteristics of an abrasive pad which allows accurate surface characteristics of an abrasive pad by suppressing effects due to various disturbances and a polishing apparatus provided with the apparatus for the measurement.SOLUTION: An apparatus for measurement of surface characteristics of an abrasive pad 2 for polishing a to-be-polished surface of a substrate W by coming in sliding contact with the substrate W includes a laser source 31 radiating a laser beam and a light-receiving element 35 which receives scattered light reflected and/or scattered by the abrasion pad 2 through the light-receiving element 35 and provides an intensity distribution corresponding to a space wavelength spectrum based on the surface characteristics of the abrasive pad 2 by means of optical Fourier transformation. The laser beam is applied at such an angle as not to reach the bottom part of pores formed in the surface of the abrasive pad 2.
摘要翻译：要解决的问题：提供一种用于测量研磨垫的表面特性的装置，其通过抑制由各种干扰引起的影响和具有测量装置的研磨装置，从而允许研磨垫的精确表面特性。解决方案：一种装置用于通过与基板W滑动接触来抛光衬底W的被抛光表面的研磨垫2的表面特性的测量包括：辐射激光束的激光源31和接收激光束的光接收元件35 通过光接收元件35由磨蚀垫2反射和/或散射的散射光，并且通过光学傅里叶变换提供与基于磨料垫2的表面特性相对应的空间波长谱的强度分布。激光束以不能到达形成在研磨垫2的表面中的孔的底部的角度施加。

10. 发明专利

JP2003068681A Method and apparatus for polishing 审中-公开
标题翻译：抛光方法和装置
公开(公告)号：JP2003068681A
公开(公告)日：2003-03-07
申请号：JP2001250678
申请日：2001-08-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MATSUO NAONORI
IPC分类号： B24B37/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for polishing a semiconductor substrate, such as wafer or the like, capable of simplifying a semiconductor manufacturing process by eliminating the nud for a cap film. SOLUTION: The method for polishing the semiconductor wafer 101, by bringing a polishing tool 121 into slidable contact therewith comprises a step of polishing a film on the wafer 101 in a dry state, without intermediary of moisture in the interface for bringing the wafer 101 into contact with the tool 121.
摘要翻译：要解决的问题：提供一种能够通过消除帽膜的裸体来简化半导体制造工艺的诸如晶片等的半导体衬底的抛光的方法和装置。解决方案：通过使抛光工具121与其滑动接触来研磨半导体晶片101的方法包括在干燥状态下抛光晶片101上的膜而不会在界面中引起晶片101进入的湿气的步骤与工具121接触。

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