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    • 3. 发明专利
    • Substrate processing method and substrate processing apparatus
    • 基板加工方法和基板加工装置
    • JP2006066891A
    • 2006-03-09
    • JP2005200309
    • 2005-07-08
    • Ebara CorpToshiba Corp株式会社東芝株式会社荏原製作所
    • SHIGETA ATSUSHITOYODA GENYANO HIROYUKIOISHI KUNIOITO KENYANAKANISHI MASAYUKIYAMAGUCHI KENJI
    • H01L21/304B24B9/00B24B37/013B24B37/04
    • PROBLEM TO BE SOLVED: To allow the peripheral portion of a semiconductor substrate to be polished by an appropriate amount without causing a lack of polishing or excessive polishing. SOLUTION: A substrate processing method is used to polish the peripheral portion of a semiconductor substrate 13. The substrate processing method comprises: a process of bringing the polishing surface of a polishing mechanism 20 into contact with the principal surface of the peripheral portion of the substrate 13, and pressing the polishing surface against the principal surface; a process of polishing the principal surface by rotating the substrate 13 with a motor 12, and detecting the polishing end point of the principal surface by monitoring the polished state of the principal surface; a process of stopping polishing of the principal surface when the polishing end point is detected, and determining the polishing time for a surface other than the principal surface, which is to be polished subsequently, on the basis of the polishing time for the principal surface which is determined when polishing is finished; and a process of polishing the surface for the determined polishing time. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了允许半导体衬底的周边部分被适当地抛光,而不会导致抛光不足或过度抛光。 解决方案:使用基板处理方法来抛光半导体基板13的周边部分。基板处理方法包括:使抛光机构20的抛光表面与周边部分的主表面接触的过程 并且将抛光表面压靠在主表面上; 通过用马达12旋转基板13来研磨主表面的过程,并且通过监测主表面的抛光状态来检测主表面的抛光终点; 在检测到研磨终点时停止主表面的研磨的处理,以及随后要研磨的主面以外的表面的研磨时间,基于主面的研磨时间 抛光结束后确定; 以及抛光表面以确定抛光时间的过程。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • POLISHING DEVICE
    • JP2001225261A
    • 2001-08-21
    • JP2000038739
    • 2000-02-16
    • EBARA CORPTOSHIBA CORP
    • KIMURA NORIOOKUMURA KATSUYAYANO HIROYUKI
    • B24B37/013B24B37/10B24B49/04B24B49/12H01L21/304B24B37/04
    • PROBLEM TO BE SOLVED: To provide a polishing device capable of detecting the film thickness of an insulating film and a metal film, during polishing, formed on the polished surface of a semiconductor substrate, as real-time continuous measured values without excessively projecting the surface of the semiconductor substrate from a turntable. SOLUTION: This polishing device is provided with a top ring 3 for holding the substrate, and the turntable 1 having a polishing surface, and polishes the surface formed with a semiconductor device on the substrate, in sliding contact with the polishing surface. An optical measuring apparatus 10 for measuring the thickness of the film formed on the polished surface of the substrate is provided close below the outer peripheral part of the turntable 1, and the outer peripheral part of the turntable 1 is provided with at least one cutout part 1a. With the rotation of the turntable 1, light projected from the measuring apparatus 10 passes through the cutout 1a to enter the polished surface of the substrate, and reflected light from the polished surface passes through the cutout 1a to enter the measuring apparatus 10.
    • 10. 发明专利
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2009123782A
    • 2009-06-04
    • JP2007293581
    • 2007-11-12
    • Toshiba Corp株式会社東芝
    • MATSUI YUKITERUKINOSHITA MASAKOMITSUYOSHI YASUROTATEYAMA YOSHIKUNINISHIOKA TAKESHIYANO HIROYUKI
    • H01L21/3205H01L21/304
    • H01L21/76808C09G1/02H01L21/31058H01L21/31144H01L21/312H01L21/76811H01L21/76835
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming a dual damascene at a high production yield by decreasing a defect and flatening an organic film.
      SOLUTION: The method for manufacturing the semiconductor device includes the steps of: forming a film on an insulating film provided on a semiconductor substrate and having a concave part by applying a solution including a solvent and an organic component; obtaining an organic film precursor by baking the film at a first temperature without organic component bridging; leaving the organic film precursor in the concave part by polishing with the use of a slurry including a resin particle; obtaining a first organic film 19 burried in the concave part by removing the solvent by baking the organic film precursor at a second temperature higher than the first temperature after polishing; obtaining a lower layer film by forming a second organic film 20 on the insulating film with the first organic film burried by the applying method; sequentially forming an intermediate layer 22 and a resist film 23 on the lower layer film; and pattern-exposing the resist film.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题:提供一种通过减少缺陷和使有机膜平坦化来制造能够以高生产率形成双镶嵌的半导体器件的方法。 解决方案:制造半导体器件的方法包括以下步骤:通过施加包括溶剂和有机组分的溶液,在设置在半导体衬底上并具有凹部的绝缘膜上形成膜; 通过在没有有机组分桥接的第一温度下烘烤所述膜来获得有机膜前体; 通过使用包含树脂颗粒的浆料进行抛光,将有机膜前体留在凹部中; 通过在高于抛光后的第一温度的第二温度下烘烤有机膜前体来除去溶剂,从而获得在凹部中嵌入的第一有机膜19; 通过在绝缘膜上形成第二有机膜20,通过涂布方法固化第一有机膜来获得下层膜; 在下层膜上依次形成中间层22和抗蚀剂膜23; 并且对抗蚀剂膜进行图案曝光。 版权所有(C)2009,JPO&INPIT