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1. 发明专利

JP2001345298A APPARATUS AND METHOD FOR POLISHING 失效
公开(公告)号：JP2001345298A
公开(公告)日：2001-12-14
申请号：JP2000163082
申请日：2000-05-31
申请人： EBARA CORP , TOSHIBA CORP
发明人： KIMURA NORIO , ISHII YU , SHIRAKASHI MICHIHIKO , KUNISAWA JUNJI , YANO HIROYUKI , OKUMURA KATSUYA
IPC分类号： B24B37/04 , B24B37/30 , B24B37/32 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing apparatus in which polishing work at the outer circumferential part of an object to be polished, e.g. a substrate on which a film is formed, is carried out through a series of operations associated with the essential polishing work and the outer circumferential part can be polished efficiently. SOLUTION: The polishing apparatus comprises a turntable 26 having a polishing face, and a top ring 28 moving freely up and down and in the horizontal direction while holding an object W to be polished and pressing the plane of the object being polished toward the turntable 26 wherein a mechanism for polishing the outer circumferential part of the object is disposed on the side of the turntable 26.

2. 发明专利

JP2002045800A CLEANING APPARATUS AND METHOD 失效
公开(公告)号：JP2002045800A
公开(公告)日：2002-02-12
申请号：JP2000231673
申请日：2000-07-31
申请人： EBARA CORP , TOSHIBA CORP
发明人： SHIRAKASHI MICHIHIKO , TSUJIMURA MANABU , HAMADA TOSHIMI , MIYASHITA NAOTO , KODERA MASAKO , NADAHARA SOICHI , TOMITA HIROSHI
IPC分类号： B08B3/02 , B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent the erosion or corrosion of the tip part of a cleaning nozzle from being promoted and to effectively clean the cleaning surface of a substrate while sufficiently reflecting the effect of a chemical liquid, functional water or gas dissolved water. SOLUTION: A substrate holding part 10 for holding the substrate and the cleaning nozzle 16 for ejecting two or more kinds of liquids toward the cleaning surface of the substrate W at the same time from two or more kinds of nozzle parts 28 and 30 arranged in a concentric state are provided and, as at least one of two or more kinds of liquids, the chemical liquid, functional water or gas dissolved water is used.

3. 发明专利

JP2007157921A Device and method for processing substrate 审中-公开
标题翻译：用于处理基板的装置和方法
公开(公告)号：JP2007157921A
公开(公告)日：2007-06-21
申请号：JP2005349440
申请日：2005-12-02
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MORISAWA SHINYA , SHIRAKASHI MICHIHIKO , KATAKABE ICHIRO , ITO KENYA , MAEDA KAZUAKI , KAMEZAWA KAORU , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/027 , H01L21/306 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method, wherein two or more kinds of substrates to be processed can be processed with the same substrate processing device avoiding reverse contamination without using two or more substrate processing devices, and a processing liquid can be improved in recovery efficiency by using a roller groove corresponding to the processing liquid. SOLUTION: The substrate processing device is equipped with three or more roller members 11 which are arranged on a plane to chuck the periphery of the disc-shaped substrate W to be processed, a roller rotation drive mechanism 12 which rotates, at least, one or more of the roller members 11, a substrate surface processing nozzle 16 which supplies a processing liquid to the surface and/or the rear of the substrate W to be processed, and others. Two or more roller grooves 11a which are engaged with the periphery of the substrate W are provided to the roller member 11 in a vertical direction at a prescribed pitch, or the roller members 11 each provided with the roller groove 11a are provided at a prescribed pitch in a vertical direction. Furthermore, the device is provided with a cleaning nozzle 17 that cleans the grooves 11a, and a suction nozzle 18 which sucks up processing liquid attaching to the insides of the grooves 11a. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置和基板处理方法，其中可以使用相同的基板处理装置处理两种或更多种待处理的基板，以避免反向污染，而不使用两个或更多个基板处理装置通过使用与处理液对应的滚子槽，能够提高处理液的回收效率。解决方案：基板处理装置配备有三个或更多个辊构件11，其被布置在平面上以卡紧待处理的盘形基板W的周边;辊旋转驱动机构12，至少旋转，一个或多个辊构件11，将处理液体供给到待处理的基板W的表面和/或后部的基板表面处理喷嘴16等。将两个以上的与基板W的周边接合的滚子槽11a以规定的间距在垂直方向上设置到滚子部件11，或者设置有滚子槽11a的滚子部件11以规定间距在垂直方向。此外，该装置设置有清洁槽11a的清洁喷嘴17和吸附附着到槽11a的内部的处理液的吸嘴18。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2000294524A POLISHING DEVICE AND METHOD THEREFOR 失效
公开(公告)号：JP2000294524A
公开(公告)日：2000-10-20
申请号：JP10112599
申请日：1999-04-08
申请人： EBARA CORP , TOSHIBA CORP
发明人： KIMURA NORIO , SHIRAKASHI MICHIHIKO , TOKUSHIGE KATSUHIKO , ASAMI MASAO , MIYASHITA NAOTO , KODERA MASAKO , MATSUI YOSHITAKA , NADAHARA SOICHI , TOMITA HIROSHI
IPC分类号： H01L21/304 , B24B37/34 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide a polishing device and method for controlling the property of a Cu surface after a substrate, such as a semiconductor wafer having a Cu layer is polished, and for controlling the property of the back face of the polished surface. SOLUTION: This polishing device is provided with a toppling for holding a substrate 20 and a turntable having a ground surface, and the face of the substrate 20, on which a semiconductor device is formed, is made to slide and brought into contact with the ground surface so as to be polished. A cleaning part for cleaning the polished substrate 20 is formed in the post stage of the polishing part equipped with the toppling and the turntable, and the cleaning part is provided with ion water supplying means 25a and 25b for supplying ion water, and the surface and back face of the substrate 20 can be cleaned, while the ion water is supplied to the substrate 20 by the ion water supplying means 25a and 25b.

5. 发明专利

JP2002016035A CLEANING APPARATUS AND METHOD 失效
公开(公告)号：JP2002016035A
公开(公告)日：2002-01-18
申请号：JP2000197233
申请日：2000-06-29
申请人： TOSHIBA CORP , EBARA CORP
发明人： TOMITA HIROSHI , SATO MOTOYUKI , NADAHARA SOICHI , SHIRAKASHI MICHIHIKO , ITO KENYA
IPC分类号： B01F3/04 , B01F5/04 , B08B1/00 , B08B1/04 , B08B3/02 , B08B3/08 , B08B7/04 , H01L21/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a single-wafer type cleaning method for cleaning a wafer with a recess on the surface effectively, without increasing cost, even if an ammonia solution which includes ozone is used. SOLUTION: An ozone gas and an ammonia solution are fed to a position directly above a wafer 7 having the recess on the surface to generate a gas dissolved solution, in which the ozone gas is dissolved in the ammonia solution. Then, the wafer is subjected to physical cleaning in a contact or non-contact manner by using the gas dissolved solution.

6. 发明专利

JP2001287142A SUBSTRATE EDGE POLISHING DEVICE 失效
公开(公告)号：JP2001287142A
公开(公告)日：2001-10-16
申请号：JP2000102669
申请日：2000-04-04
申请人： EBARA CORP , TOSHIBA CORP
发明人： KIMURA NORIO , SHIRAKASHI MICHIHIKO , OKUMURA KATSUYA
IPC分类号： B24B57/02 , B24B9/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate edge polishing device capable of efficiently polishing the edge of a substrate and allowing compactification of the device. SOLUTION: This substrate edge polishing device comprises a vertically movable substrate holding part 14 for holding the substrate W with the edge of the substrate W exposed, and a rotatable polishing part 16 having a ring-like polishing surface 20 at a position facing to the edge of the substrate W held by the substrate holding part 14.

7. 发明专利

JP2001053047A CLEANING EQUIPMENT FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD THEREOF 失效
公开(公告)号：JP2001053047A
公开(公告)日：2001-02-23
申请号：JP22935699
申请日：1999-08-13
申请人： EBARA CORP , TOSHIBA CORP
发明人： TOMITA HIROSHI , NADAHARA SOICHI , SHIRAKASHI MICHIHIKO , ITO KENYA , INOUE KATSUTAKA
IPC分类号： B08B3/12 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To remove contaminate adhering to the front and rear surfaces of a semiconductor substrate efficiently. SOLUTION: The equipment consists of a single ultrasonic wave oscillating nozzle which is placed near the circumferential end of a Si wafer 1 to be cleaned apart from the Si wafer 1 and which supplies a cleaning solution 5 onto the front and rear surfaces of the Si wafer 1, an ultrasonic oscillator 6 which applies ultrasonic waves to the front and rear surfaces of the Si wafer 1, and four drive rollers 2 which are arranged in contact with the circumferential end of the Si wafer 1 and rotate as they remain pressed against the circumferential end of the Si wafer, by which the Si wafer 1 is held and rotated.

8. 发明专利

JP2004015028A Method of processing substrate and semiconductor device 审中-公开
公开(公告)号：JP2004015028A
公开(公告)日：2004-01-15
申请号：JP2002170588
申请日：2002-06-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIRAKASHI MICHIHIKO , YASUDA HOZUMI , OBATA ITSUKI
IPC分类号： C23C18/31 , C23F1/00 , C25F3/14 , H01L21/02 , H01L21/288 , H01L21/304 , H01L21/3063 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To selectively form a protection film on a front surface of an interconnection line to protect the interconnection line, and to secure a sufficient flatness for an insulation film or the like which is deposited on the front surface of the substrate whereon the protective film is formed, eliminating a process of planarizing the front surface. SOLUTION: An interconnection line material 7 is embedded in a fine recessed portion 4 for interconnection line formed in the front surface of the substrate. After planarizing the front surface of the substrate by removing an unwanted interconnection line material, the interconnection line material 7 is further removed to from a recessed portion 4a to be filled in an upper part of the fine recessed portion 4. Then, a protective film 9 is selective formed inside the recessed portion 4a to be filled. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2003205428A ELECTRO-CHEMICAL MACHINING APPARATUS, AND METHOD 审中-公开
公开(公告)号：JP2003205428A
公开(公告)日：2003-07-22
申请号：JP2002001737
申请日：2002-01-08
申请人： EBARA CORP , MORI YUZO
发明人： SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , YASUDA HOZUMI , OBATA ITSUKI , TAIMA YASUSHI , MORI YUZO
IPC分类号： B23H3/00 , B23H3/08 , B23H5/08 , C25F3/00 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To form an object shape of high shape accuracy by machining a work formed of a conductive material at a high machining accuracy. SOLUTION: An electro-chemical machining apparatus comprises a holding unit 30 to attachably/detachably hold a work W, a machining electrode 32 approachable to the work W held by the holding unit 30, a power supply electrode 34 to supply power to the work W held by the holding unit 30, an ion exchanger 40 which is disposed between the work W and the machining electrode 32, or between the work W and the power supply electrode 34, a fluid supply unit 70 to supply the fluid between the work W with the ion exchanger 40 present therein and at least one of the machining electrode 32 and the power supply electrode 34, a power source 68 to apply the voltage between the machining electrode 32 and the power supply electrode 34, driving units 44, 56 and 60 to put the work W held by the holding unit 30 and the machining electrode 32 facing each other into relative motion, and a numerical control unit 72 to numerically control the driving units 44, 56 and 60. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2000052235A POLISHING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JP2000052235A
公开(公告)日：2000-02-22
申请号：JP23499598
申请日：1998-08-06
申请人： MORI YUZO , EBARA CORP
发明人： MORI YUZO , KIMURA NORIO , SHIRAKASHI MICHIHIKO , TAIMA YASUSHI , FUKUNAGA AKIRA
IPC分类号： B24B37/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and the device assuring efficient polishing by reducing washing for a polished wafer and a load to drainage treatment with the use of chemicals restraining. SOLUTION: Chemo-mechanical polishing is applied to a surface to be polished by forming a given electrical field around the surface to be polished with ultrapure water supplying between the surface to be polished of a material to be polished W and the polishing surface of a polishing member, and by sliding the surface to be polished and the polishing surface, respectively with an OH- or an H+ ion in water unevenly distributing around the surface to be polished.

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