专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明专利

JPH0561766B2 失效
公开(公告)号：JPH0561766B2
公开(公告)日：1993-09-07
申请号：JP13253887
申请日：1987-05-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIKAWA KOREYASU , ITOI SHINSUKE , ISHIDA KENJI , KIKUCHI MINORU
IPC分类号： H01G2/14 , H01G4/005 , H01G4/10 , H01G4/18 , H01G4/30 , H01G4/32 , H01G1/005 , H01G1/11 , H01G4/24

72. 发明专利

JPH05217814A MANUFACTURE OF LAMINATED FILM 失效
公开(公告)号：JPH05217814A
公开(公告)日：1993-08-27
申请号：JP1985492
申请日：1992-02-05
申请人： TOSHIBA CORP
发明人： OKUWADA HISAMI
IPC分类号： C01G23/00 , C01G25/00 , C23C18/14 , H01G4/06 , H01G4/10 , H01G4/12 , H01G4/33 , H01G13/00
摘要： PURPOSE:To prevent the delamination of the laminated film from being caused by repeating the following: a coating process wherein the face of a support substrate is coated with a compound solution containing a required metal element; and a process wherein a coating layer formed in the coating process is ashed. CONSTITUTION:The manufacturing method of a coating film repeats a process wherein, after the face of a support substrate has been coated with a compound solution containing a required metal element, a coating layer is ashed. As the compound solution containing the metal element, the solution of an organic metal compound such as metal alkoxide, metal soap, the acetate of a metal, the sulfone resin salt of a metal or the like or the solution of an inorganic metal salt such as the acetate of a metal is used. By an ashing treatment, the compound containing the metal element is decomposed by using oxygen radicals which are generated in a plasma or obtained by decomposing ozone; a metal layer is precipitated and formed or a metal oxide layer is formed. Thereby, a laminated film which is uniform and whose quality is high can be manufactured without causing the delamination between laminated films or between the laminated films and the support substrate.

73. 发明专利

JPH0527963B2 失效
公开(公告)号：JPH0527963B2
公开(公告)日：1993-04-22
申请号：JP21173884
申请日：1984-10-09
申请人： TAIYO YUDEN KK
发明人： SATO SATOYUKI , SHIBA NOBUYASU , KURATA SADAAKI , MONNO KOJI
IPC分类号： H01G4/33 , H01G4/06 , H01G4/10

74. 实用新型

JPH0521428U 失效
公开(公告)号：JPH0521428U
公开(公告)日：1993-03-19
申请号：JP6804491
申请日：1991-08-27
IPC分类号： H01G4/008 , H01G4/10 , H01G1/01

75. 发明专利

JPH0467767B2 失效
公开(公告)号：JPH0467767B2
公开(公告)日：1992-10-29
申请号：JP2321786
申请日：1986-02-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KONDO SHIGEO , TAKEYAMA KENICHI
IPC分类号： H01G4/10 , H01G9/02 , H01G9/028 , H01G9/032 , H01G9/04

76. 发明专利

JPH04272610A DIELECTRIC FOR CAPACITOR OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04272610A
公开(公告)日：1992-09-29
申请号：JP16914391
申请日：1991-06-14
申请人： SAMSUNG ELECTRONIC
发明人： RI SOUNIN
IPC分类号： C01G33/00 , C04B35/495 , H01B3/12 , H01G4/10 , H01G4/12 , H01L21/822 , H01L27/04 , H01L27/108
摘要： PURPOSE: To provide a dielectric for capacitors with a high dielectric constant and a low dielectric loss coefficient, whose crystal structure is not changed even at above ordinary temperatures by making the dielectric for capacitors of particular composition. CONSTITUTION: A composition a dielectric is (Srx Ba1-x )1-3y/2 Lay Nb2 O6 under the following conditions: where 0.25 0.5, the increase in dielectric loss coefficient hinders the application to a capacitor layer. When y

77. 发明专利

JPH03200309A LAMINATED THIN-FILM DIELECTRIC ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03200309A
公开(公告)日：1991-09-02
申请号：JP33978389
申请日：1989-12-27
申请人： TAIYO YUDEN KK
发明人： URANO TETSUYA , FUJIMOTO MASAYUKI
IPC分类号： H01G4/008 , H01G4/06 , H01G4/10 , H01G4/30 , H01G4/33
摘要： PURPOSE:To enable forming the title dielectric element according to a thin film thickness by forming double electrode films having SnO2 thin film on the surface and Cr, Ni or Cu thin film on the rear surface and further TiO2 dielectric thin films through causing these films to make an epitaxial growth respectively by means of vapor deposition and by laminating these two sorts of films alternately. CONSTITUTION:The title dielectric element has a fundamental structure, in which double electrode films 2, 3 which the thickness of 10mum and less having SnO2 thin film 3 on the front and Cr, Ni or Cu thin film 2 on the rear and TiO2 dielectric films 4 with the thickness of 10mum and less are alternately laminated on a glass substrate 1. In this case, a part or the whole of plural SnO2/(Cr, Ni or Cu) double electrode films 2, 3, 5, 7 and 9, as internal electrode layers for obtaining capacity, is composed of at least two groups connected with lead-out ends differing from each other. Thus, a low-cost glass substrate 1 is used so that internal electrode thin films can alternately be laminated on the glass substrate according to a thin thickness while holding dielectric thin films 4, 6 and 8 between them.

78. 发明专利

JPH03188938A METHOD AND DEVICE FOR FORMING THIN FILM OF INORGANIC POLYMER AND APPLIED PRODUCT THEREOF 失效
公开(公告)号：JPH03188938A
公开(公告)日：1991-08-16
申请号：JP18145490
申请日：1990-07-11
申请人： HITACHI LTD
发明人： OISHI TOMOJI , TAKAHASHI KEN , NAKAZAWA TETSUO , TANAKA SHIGERU , MITSUYOSHI TADAHIKO
IPC分类号： C01B13/14 , B01J13/00 , B01J19/12 , C01B13/10 , C01B13/32 , C01B17/20 , C01B33/12 , C01G15/00 , C01G19/02 , C01G23/04 , C01G30/00 , C03C17/22 , C03C17/25 , C03C25/10 , C07F19/00 , F02B75/02 , G02B1/11 , G02B1/111 , G02B1/14 , G11B7/26 , H01B3/10 , H01G2/12 , H01G4/10 , H01G4/33 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L23/29 , H01L23/31 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H05K1/03
摘要： PURPOSE:To form a thin film of an inorg. polymer by irradiating an aq. soln. of an organometallic compd. having a low mol. wt. with electromagnetic waves having specified wavelength, coating a substrate with the soln. contg. a formed prepolymer and drying the soln. CONSTITUTION:An aq. soln. of an organometallic compd. having a low mol. wt. is irradiated with electromagnetic waves contg. a component having specified wavelength required to break the bond of the metal atom and org. group of the organometallic compd. By this irradiation, the hydrolysis or thiolysis of the compd. is accelerated and a metal oxide or metal sulfide prepolymer is formed in the soln. A substrate is coated with the resulting prepolymer soln. and this soln. is dried to form a thin film of an inorg. polymer. Optical energy such as excimer laser light is suitable for use as the electromagnetic waves.

79. 发明专利

JPH0338008A THIN-FILM CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0338008A
公开(公告)日：1991-02-19
申请号：JP17379289
申请日：1989-07-05
申请人： MITSUI PETROCHEMICAL IND
发明人： OGA AKIHITO , MIYAZAKI TETSUYA , MIYAZAKI MASAHIRO , KARAIWA MASATO , ITANI AKIRA
IPC分类号： H01G4/12 , H01G4/06 , H01G4/10 , H01G4/33
摘要： PURPOSE:To reduce the generation of a crack, etc., by forming a dielectric film in which a plurality of metallic oxide layers, either one of compositions, crystal structure and crystal forms of which differ, are laminated among electrodes. CONSTITUTION:A thin-film capacitor 10 is composed of a substrate 11, a lower electrode 12 shaped onto the substrate 11, a dielectric film 13 formed onto the lower electrode 12 and an upper electrode 14 shaped onto the dielectric film 13. Metallic oxide layers 18, 19 consisting of two layers of metallic oxides are laminated in the dielectric film 13 formed onto the lower electrode 12. At least either one of compositions, crystal structure and crystal forms differ in the metallic oxide layers 18, 19, and the single oxide of a metal (an element) such as titanium, barium, calcium, strontium, zirconium, tin, a rare earth element, etc., or an oxide containing two kinds or more of these metallic elements is favorable. Accordingly, the generation of a fine crack as the location of the cause of breakdown is reduced.

80. 发明专利

JPH0259566B2 失效
公开(公告)号：JPH0259566B2
公开(公告)日：1990-12-12
申请号：JP16455784
申请日：1984-08-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： DOI AKIRA , FUJIMORI NAOHARU
IPC分类号： C23C14/46 , C23C14/34 , H01B3/00 , H01G4/06 , H01G4/10 , H01G4/12 , H01G4/33 , H01L21/316 , H01L41/39

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式