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1. 发明专利

JP2003183072A OXIDE RESISTIVE ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003183072A
公开(公告)日：2003-07-03
申请号：JP2001382753
申请日：2001-12-17
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , SAWAI YUICHI , CHIBA AKIO , SAITO YUKIO
IPC分类号： C04B35/45 , H01C7/10
摘要： PROBLEM TO BE SOLVED: To provide an oxide resistive element which has the improved resistance stability to the repeated impressing of surges. SOLUTION: The oxide resistive element comprises a copper oxide as a component substance of the resistive element and a metal oxide containing at least one kind of oxides selected from Sr, Ti, Fe, Re, Cr, V, Nb, Mo, Ba, Pr and Ca. The oxide resistive element uses the metal oxide part as an electrical conducting phase. The metal ion valence existing in the surface part 2 of the resistive element is smaller than the metal ion valence existing in the inside 1 thereof. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2000121786A METHOD FOR WATER JET PEENING OF INTERNAL STRUCTURAL MEMBER IN REACTOR PRESSURE VESSEL AND WATER JET PEENING DEVICE 失效
公开(公告)号：JP2000121786A
公开(公告)日：2000-04-28
申请号：JP22595399
申请日：1999-08-10
申请人： HITACHI LTD , HITACHI NUCLEAR ENG , HITACHI IBARAKI BUSINESS ENGIN
发明人： ENOMOTO KUNIO , HIRANO KATSUHIKO , HAYASHI EISAKU , MORINAKA TADASHI , SHIMIZU SADAHITO , SUGANO SATOSHI , TANAKA SHIGERU , ISHIKAWA TETSUYA
IPC分类号： B23K31/00 , B23K9/00 , C21D7/06 , G21C19/00 , G21D1/00
摘要： PROBLEM TO BE SOLVED: To prevent such damage as stress corrosion cracking by providing a structure where the jet containing cavitation bubbles from a nozzle is collided against a flat collision surface of a baffle body to change the direction of the jet and hit it with the surface of an internal structural member. SOLUTION: A nozzle 4 of an ascending and descending axis 6 is inserted parallel to an outer face of a shroud 23 by using an auxiliary hoist of a refueling machine. A jet 3 containing cavitation bubbles 2a from the nozzle 4 is injected downward and is collided against a flat surface of a baffle 5a near a vertical weld 17. The jet 3 collides with the vertical weld 17 as a collision jet 9a. On this occasion, it is preferable that the distance L between the tip of the nozzle 4 and the collision surface of the baffle 5a is 50 or less times as long as the injection aperture of the nozzle. Minute cavitation bubbles 2a that did not collapse when they collided with the baffle body 5a grow in a collision jet 9a and collapse by high pressure in the vertical weld 17, whereby tensile residual stress of the vertical weld 17 can be reduced effectively. It is preferable that the angle α between the central axis 3a of the injection aperture of the nozzle 4 and the collision surface 50 of the baffle body 5a is 60 deg. or more.

3. 发明专利

JPH11186625A PIEZOELECTRIC ELEMENT 失效
公开(公告)号：JPH11186625A
公开(公告)日：1999-07-09
申请号：JP35548797
申请日：1997-12-24
申请人： HITACHI LTD
发明人： SHIONO OSAMU , TANAKA SHIGERU , SUZUKI HIDEO , WATABIKI SEIJI , HAYASHIBARA MITSUO , MIYATA MOTOYUKI , ISHIDA TOMIO
IPC分类号： H01L41/083
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a piezoelectric element without increasing the electrode cost of the element. SOLUTION: A piezoelectric element has a laminated structure which is constructed by alternately laminating piezoelectric layers 10 made of a piezoelectric ceramic (such as lead titanate-lead zirconate, etc.), having a lead-based perovskite structure and inner electrode layers made of silver palladium, etc., upon another. However, a migration-resistant layer 12 made of a migration- resistant ceramic (a piezoelectric ceramic containing no lead) having a weaker piezoelectric property than the piezoelectric layers 10 have is interposed between each piezoelectric layer 10 and each inner electrode layer 11.

4. 发明专利

JPH10317171A SAMPLE SUPPORTING DEVICE 失效
公开(公告)号：JPH10317171A
公开(公告)日：1998-12-02
申请号：JP13193597
申请日：1997-05-22
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO , TANAKA SHIGERU , SEKIMOTO SHINYA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To increase the number of samples to be attached in the same area, and to easily attach/detach the samples by pressing the sample arranged between an inner pressing piece and an outer pressing piece mounted on a sample stage against the pressing piece on one side by the pressing piece on the other side, and fixing the sample. SOLUTION: In a vacuum chamber, a sample mounted on a sample stage of a rotating sample holder is irradiated with the ion beam in which the introduced ion gas is accelerated by acceleration electrodes. An inner pressing piece 30 and an outer pressing piece 31 are movably mounted by screws 32 on a sample stage 14A of a sample supporting device of an ion beam machining equipment. A plurality of samples 13A-13D are arranged between the pressing pieces, held and temporarily fixed thereto. The screws 32 of the outer pressing piece 31 are loosened while the inner pressing piece 30 is fixed, the samples 13A-13D are pressed against the inner pressing piece 30 through the outer pressing piece 31, and then, the screws 32 are tightened to fix the samples between the pressing pieces.

5. 发明专利

JPH10106810A ZNO CERAMIC RESISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH10106810A
公开(公告)日：1998-04-24
申请号：JP25816596
申请日：1996-09-30
申请人： HITACHI LTD , JAPAN RES DEV CORP
发明人： MOTOWAKI NARIHISA , TANAKA SHIGERU , TAKAHASHI KEN , MAEDA KUNIHIRO
IPC分类号： C04B35/453 , H01C7/10
摘要： PROBLEM TO BE SOLVED: To provide a high-performance ZnO ceramic resistor which exhibits an excellent linearity of voltage/current characteristic and can prevent reduction in resistivity even during continuous passage of current in a high electric field. SOLUTION: A sintered compact contains 70mol% of ZnO, 5-20mol% of Al2 O3 and 3-10mol% of MgO and includes 0.01-1wt.% relative to itself of RuO2 or each 0.01-1wt.% of RuO2 and WO3 . RuO2 and WO3 are produced by impregnating the sintered compact with a solution in which Ru and W are dissolved and subjecting it to firing.

6. 发明专利

JPH07161505A CERAMIC LINEAR RESISTOR 失效
公开(公告)号：JPH07161505A
公开(公告)日：1995-06-23
申请号：JP31003193
申请日：1993-12-10
申请人： HITACHI LTD
发明人： MOTOWAKI NARIHISA , TAKAHASHI KEN , TANAKA SHIGERU , YAMADA SEIICHI , SHOJI MORITAKA
IPC分类号： H01C7/10
摘要： PURPOSE:To obtain a ceramic linear resistor having high resistivity in which the deterioration of resistance is suppressed by composing a Zn oxide-Al oxide-Mg oxide based ceramic resistor of the crystal particles of ZnO, ZnAl2O4, MgAl2O4, Zn2SiO4. CONSTITUTION:The ceramic linear resistor contains a Zn oxide as main constituent, an Al oxide and a Mg oxide as sub-constituents, and a Co oxide as an additive by 0.01-3mol.% expressed in terms of CoO. It is composed of 68-90mol.% of Zn oxide, 15-20mol.% of Al oxide, 3-10mol.% of Mg oxide, and 0.01-3mol.% of Co oxide. Furthermore, 0.1-5mol.% of an Si oxide or 0.1-5mol.% of at least one constituent of Fe oxide Rh oxide or V oxide is added.

7. 发明专利

JPH07153606A MANUFACTURE OF VOLTAGE NONLINEAR RESISTOR AND LIGHTING ARRESTOR 失效
公开(公告)号：JPH07153606A
公开(公告)日：1995-06-16
申请号：JP29939693
申请日：1993-11-30
申请人： HITACHI LTD
发明人： YAMADA SEIICHI , TANAKA SHIGERU , SHOJI MORITAKA , MOTOWAKI NARIHISA , TAKAHASHI KEN , SHIRAKAWA SHINGO , OWADA SHINICHI , YAMAZAKI TAKEO
IPC分类号： H01C7/10 , H01C7/12
摘要： PURPOSE:To obtain a stable ZnO element, which has a high reliability, is not deteriorated its characteristics and has a high discharge voltage, by a method wherein a composite oxide obtained from additives excluding specified additives, the excluded additives and ZnO are mixed and are granulated to form a molded material. CONSTITUTION:In a process, in which ZnO is used as a main component and additives, such as BiO2O3, Co2O3, MnO, Sb2O3, Cr2O3, NiO, SiO2, GeO2, Al(NO3)3 and B2O3, are mixed with the ZnO, the additives excluding the SiO2 and/or the GeO2 are first mixed and the mixture is calcined at 800 to 1000 deg.C in the atmosphere and is ground to obtain a composite oxide. After that, the composite oxide, single oxides of the SiO2 and/or the GeO2 and the ZnO are mixed and are granulated to form a molded material. Then, a first heat treatment that the molded material is sintered at about 1050 to 1300 deg.C, is cooled down to less than about 300 deg.C, is heated up to about 800 to 950 deg.C, is held for one to three hours at the above temperature and is cooled down to less than about 300 deg.C and a second heat treatment that the molded material is again heated up to about 650 to 900 deg.C, is held for one to three hours at the above temperature and is cooled down to room temperatures are conducted.

8. 发明专利

JPH06168802A CERAMICS LINEAR RESISTOR AND BREAKER USED THEREOF 失效
公开(公告)号：JPH06168802A
公开(公告)日：1994-06-14
申请号：JP31991392
申请日：1992-11-30
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , TAKAHASHI KEN , MOTOWAKI NARIHISA , YAMADA SEIICHI , SHOJI MORITAKA
IPC分类号： H01C7/00 , H01C7/10 , H01H33/16
摘要： PURPOSE:To provide a ceramics linear resistor which does not change resistivity even if a high electric field is applied for a long time or by a repetitive pulse. CONSTITUTION:The title resistor contains 68 to 90mole% of zinc oxide, 5 to 20mole% of aluminum oxide, 3 to 10mole% of magnesium oxide and 0.5 to 10mole% of one or more kinds of calcium oxide, strontium oxide and barium oxide (1 to 10mole% in case of single mix of calcium oxide). If necessary, it contains a very small amount of silicon dioxide and mangane oxide in ceramics. Since variation of resistivity in high electric field is thereby small in comparison with a conventional zinc oxide type ceramics resistor, life and reliability of a UHF power transmission breaker wherein a resistor is used can be improved.

9. 发明专利

JPH0426761A SPUTTERING DEVICE AND OPERATION THEREOF 失效
公开(公告)号：JPH0426761A
公开(公告)日：1992-01-29
申请号：JP13286290
申请日：1990-05-23
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , SETOYAMA HIDETSUGU , GUNJI HIDEKI
IPC分类号： C23C14/38 , C23C14/34 , C23C14/36 , C23C14/40
摘要： PURPOSE:To prevent the misregistration of a magnetic material substrate with a change in magnetic field at the time of forming of a film on the substrate by controlling, with time, the energization to a coil which generates a magnetic field for confining plasma of the bipolar flat plate electrode type sputtering device. CONSTITUTION:A power source is turned on from a high-frequency power source 10 to generate the plasma in a discharge space 11 faced each other with a substrate electrode 5 and a target electrode 3. Currents are passed to four coils 12a to 12d to generate magnetic fields so as not to diffuse the plasma to the outside of the discharge space 11. The ions generated in this plasma bombard the target plate 2 and sputter the plate, thereby depositing the target atoms on the substrate 4 and forming the thin film thereon. The currents to be passed to the coils 12a to 12d are changed by a current controller 20 to gradually change the intensity of the magnetic field, by which the change in the position of the substrate 4 by the rapid fluctuation in the magnetic field is prevented.

10. 发明专利

JPH01301853A VACUUM TREATMENT EQUIPMENT 失效
公开(公告)号：JPH01301853A
公开(公告)日：1989-12-06
申请号：JP13134488
申请日：1988-05-31
申请人： HITACHI LTD
发明人： TANAKA SHIGERU
IPC分类号： C23C14/22 , C23C14/56 , C23C16/54
摘要： PURPOSE:To carry out plural treatments while preventing the admission of gas, etc., among respective treatment sources by providing a closed region, leaving a space necessary to transfer a substrate, to each treatment source in equipment having plural treatment sources in the same vacuum vessel. CONSTITUTION:In vacuum treatment equipment equipped with plural treatment sources for forming a film on a substrate 11 in the same vacuum vessel 1, the substrate 11 is attached to a substrate holder 9 moved by means of a drive mechanism 10. Further, a region which is divided with partition plates 8 and closed is provided, leaving a space (g) for transferring the holder 9, to each treatment source mentioned above, and the substrate 11 is passed through the space (g) and made to face respective treatment sources in succession to undergo treatments. Although the contaminants of the used gases and grains are generated in the regions in which the treatment sources exist in the course of the above treatments, the admission of the above contaminants into the other regions can be inhibited because the spaces among respective regions are narrow.

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