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1. 发明专利

JPH03276154A PRODUCTION OF DUSTPROOF BODY HAVING HIGH LIGHT TRANSMITTANCE 失效
公开(公告)号：JPH03276154A
公开(公告)日：1991-12-06
申请号：JP7728290
申请日：1990-03-27
申请人： MITSUI PETROCHEMICAL IND
发明人： KARAIWA MASATO , HAMA HIDEO , MIYAZAKI TETSUYA , KAWASAKI MAYUMI
IPC分类号： G03F1/50 , G03F1/62 , G03F1/64 , H01L21/027
摘要： PURPOSE:To prevent photodisintegration even by irradiation with light having short wavelength over a long period of time by using an inorg. film grown on a substrate by oxidation under heating as a pellicle. CONSTITUTION:A silicon wafer 5 is heated and a silicon oxide layer 6 is grown on both sides of the wafer 5 by oxidation. A photoresist layer 7 is formed on the entire surface of the layer 6, irradiated with UV from the rear side of the wafer 5 through a mask 9 and developed. The disclosed layer 6 is removed with an etching soln. and the disclosed wafer 5 is removed by etching. The remaining resist layer 7 is then removed to form a pellicle.

2. 发明专利

JPH0367405A CERAMIC THIN FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0367405A
公开(公告)日：1991-03-22
申请号：JP20259489
申请日：1989-08-04
申请人： MITSUI PETROCHEMICAL IND
发明人： OGA AKIHITO , MIYAZAKI TETSUYA , MIYAZAKI MASAHIRO , KARAIWA MASATO
IPC分类号： B32B18/00 , H01B3/00 , H01G4/12
摘要： PURPOSE:To reduce the occurrence of cracks or the like at the time of manufacturing and secure withstanding voltage characteristics by constituting a ceramic thin film with multiple metal oxide layers having different crystalline structures or crystalline forms on adjacent layers. CONSTITUTION:A multi-layer structure lower electrode 12 made of a silicone oxide layer 15, a chromium layer 16 and a platinum layer 17 is provided on a heat-resistant substrate 11 such as a silicone wafer. The thickness of individual layers is set to the degree that the increase of the dielectric loss of a capacitor is effectively prevented. Layers 18 and 19 containing one or two or more kinds of titanium, strontium, zirconium, tin and barium titanate with different crystalline structures or crystalline forms of oxides are formed on it as a ceramic thin film 13. The occurrence of fine cracks can be effectively prevented. An upper electrode 10 is formed with silver, copper, gold A, Pt and Pd on them.

3. 发明专利

JPH0365336A CERAMIC THIN FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0365336A
公开(公告)日：1991-03-20
申请号：JP20259389
申请日：1989-08-04
申请人： MITSUI PETROCHEMICAL IND
发明人： OGA AKIHITO , MIYAZAKI TETSUYA , MIYAZAKI MASAHIRO , KARAIWA MASATO
IPC分类号： B32B18/00 , B32B9/00 , C04B35/00 , C04B35/622
摘要： PURPOSE:To decrease the occurrence of cracks by being a constitution wherein a plurality of different metallic oxide layers are laminated in adjacent layer compositions. CONSTITUTION:A coating treatment is conducted such that a coating liquid which is different in composition from the coating liquid applied prior thereto on the surface of a lower electrode 12 formed on a base board 11 is applied on a metallic oxide layer 18 formed prior thereto, and the composition of a coating layer formed on the metallic oxide layer 18 is changed with the composition of another layer and then a heat treatment is carried out therefor wherein through repeating alternately this coating treatment and heat treatment, a metallic oxide layer 19 which is different in composition from the metallic oxide layer 18 is formed, thereby obtaining a ceramic thin film 13 of a two layered construction. As a kind of this coating liquid, a solution in which a kind or more of metallic compositions such as a calcium composition, strontium composition, barium composition, titanium composition or the like is used. Thus, a ceramic th8n film can be obtained which is excellent withstand voltage property and insulating property.

4. 发明专利

JPH0324712A CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0324712A
公开(公告)日：1991-02-01
申请号：JP16006989
申请日：1989-06-22
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA , ITANI AKIRA
IPC分类号： H01G4/12 , H01G4/30
摘要： PURPOSE:To easily manufacture a capacitor having high withstand voltage and large capacitance by piling up Si substrates respectively provided with silicon-oxide layers on both surfaces upon another with internal electrodes in between and, at the same time, providing insulating grooves on one sides of the internal electrodes. CONSTITUTION:After a plurality of Si substrates 4 respectively provided with dielectric films 6 formed of a silicon oxide on both upper and lower surfaces are piled upon another with internal electrodes 8 in between, insulating grooves 9 are formed on one side section of each electrode 8 and the first and second external electrodes 14 and 16 are respectively connected to the end faces of the substrates 4 on which the grooves are formed and end faces of the electrodes 8 opposite to the grooves 8. Since the silicon oxide forming the dielectric films 6 is compact and high in withstand voltage, the withstand voltage of the films 6 is improved. Moreover, since the substrates 4 are piled up, the electric capacity of this capacitor is multiplied as compared with the capacitor having dielectric films on one sides of substrates only. In addition, because of the insulating grooves 9 provided to the electrodes 8, the electrode connecting process can be carried out easily. Therefore, a capacitor having large capacitance and high withstand voltage can be manufactured easily.

5. 发明专利

JPH0324711A CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0324711A
公开(公告)日：1991-02-01
申请号：JP16006889
申请日：1989-06-22
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA , ITANI AKIRA
IPC分类号： H01G4/12 , H01G4/30
摘要： PURPOSE:To easily manufacture a capacitor having high withstand voltage and large capacitance by piling up Si substrates respectively provided with silicon-oxide films on both surfaces upon another with internal electrodes in between and, at the same time, filing insulating grooves formed on one sides of the internal electrodes with insulating members. CONSTITUTION:After dielectric films 6 are formed of a silicon oxide on upper and lower surfaces of a plurality of Si substrates 4, the substrates 4 are piled upon another in the thickness direction with internal electrodes 8 in between and insulating grooves 9 filled with insulating members 10 are formed on one sides of the electrodes 8. Then the first and second external electrodes 14 and 16 are respectively connected to one side faces of the substrates 4 where the grooves 9 are formed in the electrodes 8 and one side faces of the electrodes 8 opposite to the grooves 9. The silicon oxide forming the dielectric films 6 is compact and high in withstand voltage, the withstand voltage of the films 6 is improved. Moreover, since the substrates 4 are piled up, the capacitance of this capacitor is multiplied. In addition, the grooves 9 are filled with the insulating members 10, the electrode connecting process can be carried out easily. Therefore, a capacitor having large capacitance and high withstand voltage can be manufactured easily.

6. 发明专利

JPH0324705A CAPACITOR 失效
公开(公告)号：JPH0324705A
公开(公告)日：1991-02-01
申请号：JP16006389
申请日：1989-06-22
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA , ITANI AKIRA
IPC分类号： C30B29/06 , H01G4/06 , H01G4/12 , H01G4/33
摘要： PURPOSE:To obtain a capacitor having high withstand voltage and large capacitance by using an Si substrate as the second electrode and a silicon-oxide film formed on the surface of the substrate including grooves provided in the surface as a dielectric film. CONSTITUTION:A capacitor is provided with an Si substrate 4 having grooves 3 in at least one surface, dielectric film 6 formed of a silicon oxide on the surface of the substrate 4 with the grooves 3, and the first electrode 8 formed on the surface of the film 6 and the Si substrate 4 is constituted as the second electrode. Since the silicon oxide forming the dielectric film 6 is compact and high in withstand voltage, the withstand voltage of this capacitor is improved. Moreover, since the grooves 3 are provided in the surface of the substrate 4, the capacitance of this capacitor is increased as compared with the capacitor without the groove formed on the surface with the dielectric film 6. Therefore, a capacitor having large capacitance and high withstand voltage can be obtained.

7. 发明专利

JPH0324704A CAPACITOR 失效
公开(公告)号：JPH0324704A
公开(公告)日：1991-02-01
申请号：JP16006189
申请日：1989-06-22
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA , ITANI AKIRA
IPC分类号： C30B29/06 , H01G4/06 , H01G4/12 , H01G4/33
摘要： PURPOSE:To obtain a capacitor having high withstand voltage and large capacitance by using an Si substrate as the second electrode and a silicon oxide formed on the upper, lower, and side faces of the substrate as a dielectric film. CONSTITUTION:A capacitor is provided with an Si substrate 4, dielectric film 6 formed of a silicon oxide on the upper, lower, and side faces of the substrate 4, and the first electrode 8 formed on the surface of the film 6 and the substrate 4 is constituted as the second electrode. Since the silicon oxide forming the dielectric film 6 is compact and high in withstand voltage, the withstand voltage of this capacitor is improved. Moreover, since the film 6 is formed on both surfaces of the Si substrate 4, the capacitance of this capacitor can be doubled as compared with the capacitor having the dielectric film on one surface only. Therefore, a capacitor having large capacitance and high withstand voltage can be obtained.

8. 发明专利

JPH0316110A MANUFACTURE OF CAPACITOR 失效
公开(公告)号：JPH0316110A
公开(公告)日：1991-01-24
申请号：JP6897989
申请日：1989-03-20
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA
IPC分类号： H01G4/12 , H01G4/33
摘要： PURPOSE:To keep the quality of a capacitor constant and improve its productivity by making a metal deposit itself into voids of pin holes, cracks, and the like which are formed in dielectric thin films with an electric plating process and after that, changing the above metal into insulating substances after oxidizing the metal. CONSTITUTION:After forming a dielectric thin film 6 on the surface of a lower electrode 12 that is formed on a substrate 2, an electric plating is performed by using the lower electrode 12 as the cathode for electric plating to cause metals 22 to deposit in voids 20 of pin holes, cracks, and the like which are formed on the dielectric thin film 6. After that, the metals 22 deposited in the voids 20 are insulated after being oxidized. Subsequently, an upper electrode 8 is formed on the surface of the dielectric thin film 6. Even through the upper electrode 8 is formed on the dielectric thin film 6 in this way, this thin film prevents the metals which make up the upper electrode 8 from entering into the voids 20 and then, insulation between upper and lower electrodes 8 and 12 is maintained favorably and the quality of a capacitor is kept constant.

9. 发明专利

JPH02260621A THIN FILM CAPACITOR 失效
公开(公告)号：JPH02260621A
公开(公告)日：1990-10-23
申请号：JP8335089
申请日：1989-03-31
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI MASAHIRO , KARAIWA MASATO , OGA AKIHITO , MIYAZAKI TETSUYA , ITANI AKIRA
IPC分类号： H01G4/33 , H01G4/06
摘要： PURPOSE:To enhance the performance in simplified process by a method wherein a dielectric film is formed on an Si substrate and then an upper electrode is formed on the dielectric film. CONSTITUTION:The title thin film capacitor 2 is provided with an Si substrate 4 and a dielectric film formed on the surface of the Si substrate 4. On the other hand, an upper electrode 8 is laminated on the surface of the dielectric film 6 while a lower electrode 10 is laminated on the rear surface of the substrate 4. The laid substrate 4 in specific resistance not exceeding 0.1OMEGAcm fills the role of the lower electrode 10. Besides, the dielectric film 6 is a mixed layer comprising an Si oxide and a metallic oxide, a reaction product layer or a laminated layer structure of these layers. In such a constitutution, the substrate 4 becomes a part of the electrode 10 so that the dielectric layer 6 need not be laminated directly on the electrode 10 to simplify the process. Furthermore, the substrate 4 is thermally oxidized to form an SiO2 film thereby enabling the performance to be enhanced such as the augmented breakdown strength and finer-formed film.

10. 发明专利

JPH02217318A PRODUCTION OF BARIUM TITANATE GEL AND BARIUM TITANATE 失效
公开(公告)号：JPH02217318A
公开(公告)日：1990-08-30
申请号：JP3704489
申请日：1989-02-16
申请人： MITSUI PETROCHEMICAL IND
发明人： MIYAZAKI TETSUYA , OGA AKIHITO , MIYAZAKI MASAHIRO , KARAIWA MASATO , ITANI AKIRA
IPC分类号： C01G23/00
摘要： PURPOSE:To form barium titanate excellent in cracking resistance by adding a mixed solution of an alcohol and a monovalent inorganic acid or water further added thereto to a mixed solution prepared by dissolving respective alkoxides of titanium and barium in an alcohol, providing a homogeneous solution and gelatinizing the resultant solution. CONSTITUTION:A titanium alkoxide and barium alkoxide are homogeneously mixed in the presence of alcohols. A mixed solution of alcohols and a monovalent inorganic acid or a mixed solution of the alcohols, monovalent inorganic acid and water is then added to the resultant mixture to provide a homogeneous solution, which is subsequently gelatinized to afford a barium titanate gel. The obtained gel is then dried and calcined to provide barium titanate. The mixing atomic ratio of the titanium alkoxide to the barium alkoxide is normally about 0

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