专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH1126389A METHOD FOR MODIFYING DIAMOND 失效
公开(公告)号：JPH1126389A
公开(公告)日：1999-01-29
申请号：JP19051197
申请日：1997-06-30
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIOMI HIROSHI , OGINO SEIJI , FUJIMORI NAOHARU , NAKAHARA TSUNEO
IPC分类号： H01L21/265
摘要： PROBLEM TO BE SOLVED: To order a lattice structure and activate an electric carrier, by irradiating with a laser beam which is absorbed through resonance absorption into lattice vibration of carbon as a component atom of a diamond or vibration between an additive impurity and the component atom. SOLUTION: A trajectory of a free electron travelling approximately at the light velocity from a free electron laser 10 is forcedly bent, and a light is generated by damped radiation. This light is caused to travel forward and backward between resonators, and induced emission is repeated. Thus, a laser beam 11 of a matched phase is reflected by a mirror 12, and a converged light 14 is formed by a ZnSe lens 13. This converged light 14 is reflected by a galvanometer mirror 15 which oscillates with a constant amplitude and in a constant cycle, and a sample 16 which is a diamond is irradiated with the converged light 14. By this irradiation, the converged light is absorbed through resonance absorption into lattice vibration of carbon as a component atom of the sample 16 or vibration between an additive impurity and the component atom.

4. 发明专利

JP2567446B2 失效
公开(公告)号：JP2567446B2
公开(公告)日：1996-12-25
申请号：JP6291588
申请日：1988-03-16
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJITA NOBUHIKO , FUJIMORI NAOHARU , ITOZAKI HIDEO , TANAKA SABURO , HARADA KEIZO , JODAI TETSUJI
IPC分类号： C23C14/08 , C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24

5. 发明专利

JPH08225398A OXIDE THIN FILM HAVING ROCK CRYSTAL STRUCTURE AND ITS PRODUCTION 失效
公开(公告)号：JPH08225398A
公开(公告)日：1996-09-03
申请号：JP3486095
申请日：1995-02-23
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： IMAI TAKAHIRO , TANAKA MOTOYUKI , FUJIMORI NAOHARU
IPC分类号： C30B23/00 , C30B25/00 , C30B25/18 , C30B29/16 , H01L21/316 , H03H3/02 , H03H9/19
摘要： PURPOSE: To obtain an oxide thin film having rock crystal structure of polycrystal or single crystal having an arbitrary film thickness without requiring large-scale apparatus used by hydrothermal synthetic method. CONSTITUTION: This oxide thin film having a rock crystal type crystalline structure comprising >=1 layer, consisting essentially of silicon dioxide or germanium dioxide or their mixture and having 5nm to 50μm thickness is formed on a substrate by vapor phase deposition method at 400-1200 deg.C substrate temperature using a raw material containing at least Si and/or Ge and preferably further containing one or more kinds of alkali metals.

6. 发明专利

JPH08213871A CRYSTAL VIBRATOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH08213871A
公开(公告)日：1996-08-20
申请号：JP1689395
申请日：1995-02-03
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
IPC分类号： C01G17/02 , C30B5/00 , H01L41/08 , H01L41/39 , H03H3/02 , H03H9/19 , H01L41/24
摘要： PURPOSE: To reduce the cost and to allow the method to have provision for a higher frequency vibrator by manufacturing the vibrator with an optional film thickness and shape without the need for a large scale equipment like a hydrothermal synthesis. CONSTITUTION: A single crystal thin film crystal whose thickness is 5nm or over and 50μm or less manufactured by the sol gel method is used for a vibration section. The crystal vibrator is manufactured by forming an oxide single crystal film 2 using a GeO2 as a major component on the single crystal substrate 1, forming a single crystal thin film crystal 3 on the oxide single crystal film 2, solving the oxide single crystal film 2 in a water solution to exfoliate the single crystal thin film crystal 3 from the single crystal substrate 1 and the single crystal thin film crystal 3 is set as a vibration section.

7. 发明专利

JPH08208387A DIAMOND PARTS 失效
公开(公告)号：JPH08208387A
公开(公告)日：1996-08-13
申请号：JP3430595
申请日：1995-01-30
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： CHIKUNO TAKASHI , FUJIMORI NAOHARU
IPC分类号： G02B5/00 , C30B25/02 , C30B29/04 , G02B1/02
摘要： PURPOSE: To obtain parts excellent in optical or electrical characteristics and having diamonds capable of synthesis in large area as diamond parts used for an optical window material, a sensor, etc. CONSTITUTION: Each of the objective diamond parts has a structure formed by surrounding the peripheries of single-crystalline diamonds 1, 3 each having >=1mm area and excellent in function as an optical window or a sensor with a polycrystalline diamond 4 in a contact state.

8. 发明专利

JP2519773B2 失效
公开(公告)号：JP2519773B2
公开(公告)日：1996-07-31
申请号：JP7126988
申请日：1988-03-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJIMORI NAOHARU , HARADA KEIZO , ITOZAKI HIDEO , TANAKA SABURO , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C01G3/00 , C01G1/00 , H01B12/12 , H01L39/12

9. 发明专利

JPH08157297A THIN SINGLE CRYSTAL FILM-SHAPED ROCK CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH08157297A
公开(公告)日：1996-06-18
申请号：JP30048294
申请日：1994-12-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
IPC分类号： C30B5/00 , C01B33/12 , C30B29/18
摘要： PURPOSE: To produce such thin rock crystal as to well satisfy the requirement of reduction in film thickness at a low cost without requiring a large-scale apparatus such as an autoclave. CONSTITUTION: An oxide single crystal film 2 having the rock crystal type crystal structure of germanium dioxide is formed on a single crystal substrate 1 by a sol-gel method and the objective thin single crystal film-shaped rock crystal 3 is formed on the film 2 by a sol-gel method and then separated from the substrate 1 by dissolving the film 2 in an aq. soln. This rock crystal 3 is based on SiO2 and has 5nm to 50μm thickness.

你已经成功收藏专利！

检索式保存成功!

IPRDB