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61. 发明专利

JPS61107642A Cooling method of target for generating x-rays 失效
标题翻译：用于产生X射线的目标的冷却方法
公开(公告)号：JPS61107642A
公开(公告)日：1986-05-26
申请号：JP23060984
申请日：1984-10-30
申请人： Mitsubishi Electric Corp
发明人： HOSHIKA HARUYUKI , SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI , CHIBA AKIRA
IPC分类号： F25D3/10 , H01J35/12
CPC分类号： H01J35/12
摘要： PURPOSE:To improve cooling effect by providing a cavity part in a target supporter serving to support a target on the side of the target, and supplying compressed liquefied gas thereinto for cooling the target by making use of heat vaporization of said gas. CONSTITUTION:A cavity part 7 is formed in a target supporter 2 for supporting a target 1 serving to generate X-rays 4 with irradiation of an electron beam 3 on the side of the target 1, and a pipe 8 for liquefied gas is provided in communication with said cavity part. In succession, liquefied gas 9 such as Freon, etc., is blown into the cavity part 7 from a nozzle part 10 and rapidly vaporized into gas, whereby the target 1 is cooled with the aid of vaporization heat produced thereupon. Thus, cooling effect can greatly be improved as compared with a case by water cooling for taking out a higher X-ray output.
摘要翻译：目的：通过在目标支撑体中设置用于支撑目标侧的目标的空腔部分，并且通过利用所述气体的热汽化来供应压缩的液化气体来冷却目标，来改善冷却效果。构成：在目标支撑体2中形成空腔部7，用于通过照射目标1侧的电子束3来支撑用于产生X射线4的靶1，并且在液体气体管8中设置有用于液化气体的管8 与所述腔部连通。接着，将诸如氟利昂等的液化气体9从喷嘴部分10吹入空腔部分7中并迅速汽化成气体，由此借助于其上产生的蒸发热来冷却靶材1。因此，与通过水冷用于取出较高的X射线输出的情况相比，可以大大提高冷却效果。

62. 发明专利

JPS60223124A PATTERN INSPECTION DEVICE 失效
公开(公告)号：JPS60223124A
公开(公告)日：1985-11-07
申请号：JP8060484
申请日：1984-04-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEUCHI SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： H01L21/66 , G06T1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To inspect a pattern at high resolution and the high speed of processing by simultaneously irradiating the whole surface of a sample by charged beams and detecting a defect by a two-dimensional detector. CONSTITUTION:Rectilinear charged beams having uniform distribution discharged from a charged beam source 14 are projected onto a sample 2 in the same manner as beams emitted from a light source. Charged beams projected to the sample 2 intrude into the sample 2, and transmit the sheet-shaped sample 2 in response to transmittance determined by the energy of charged particles and the constituent, density, etc. of each section of the sample 2. Charged beams transmitting the sample 2 are magnified by an electromagnetic type or electrostatic type lens system 16 mounted to the lower section of the sample, and changed into an electric signal by a two-dimensional detector 17. A two-dimensional pattern data signal obtained in this manner is processed by a data processing section 18, thus removing a defect.

63. 发明专利

JPS60203939A SUBMICRON TREATMENT USING X-RAY SENSITIVE RESIST 失效
公开(公告)号：JPS60203939A
公开(公告)日：1985-10-15
申请号：JP6435284
申请日：1984-03-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , SUZUKI YOSHIKI
IPC分类号： C08F8/18 , C08F8/20 , G03C5/08 , G03F7/004 , G03F7/038 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain high sensitivity, superior resolution, and dry etching resistance by using a chlorinated polymethylstyrene having a specified chlorination rate and a specified mol.wt. range as a resist material. CONSTITUTION:Chlorinated polymethylstyrene (CPMSR) having 90-120% chlorination rate and 400,000-600,000mol.wt. range is used as an X-ray sensitive resist material used for forming a pattern by selectively irradiating PdLalpha rays and developing it. Sensitivity can be enhanced such CPMSR has a high content of C having high absorption coefft. of PdLalpha rays, and high contrast can be attained by selecting said range of chlorination rate. Uniform resist film thickness can be obtained by using said polymer of said mol.wt. range. As a result, the obtained X-ray resist has high sensitivity to PdAalpha rays, a gamma value of >=1.0, and superior resolution and dry etching resistance, and it permits microfabrication in the manufacture process of semiconductors in the submicron region.

64. 发明专利

JPS6083033A MANUFACTURE OF MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6083033A
公开(公告)日：1985-05-11
申请号：JP19182183
申请日：1983-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , SUZUKI YOSHIKI , YAMAZAKI TERUHIKO
IPC分类号： G03F1/00 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To eliminate an Au film etching stage and to obtain a mask for X-ray exposure having high masking efficiency by removing the parts of a thin film as a substrate on which no Au film is formed so as to inhibit the absorption of X- rays in the thin film. CONSTITUTION:A polyimide film 2 for the thin film substrate of a mask for X- ray exposure, a Ti film 4 and a resist film 5 having a desired pattern are successively formed on a silicon substrate 1. The Ti film 4 is etched through the resist film 5 as a mask by reactive ion etching with gaseous CCl4. The thin film 2 is etched through the etched Ti film 4 as a mask by reactive ion etching with gaseous O2 to remove the parts not covered with the Ti film 4. The central part of the substrate 1 is removed by etching with an aqueous soln. of fluoronitric acid or KOH so that the peripheral part remains as a frame. An Au film 3 is then formed on the Ti film 4 by vapor deposition or other method. Thus, an Au film etching stage is made unnecessary, X-ray transmission loss due to the thin film substrate is prevented, and a mask for X-ray exposure having high masking efficiency can be manufactured.

65. 发明专利

JP2000330262A METHOD FOR WASHING PHOTOMASK, APPARATUS THEREFOR AND PHOTOMASK WASHING SOLUTION 失效
公开(公告)号：JP2000330262A
公开(公告)日：2000-11-30
申请号：JP13979399
申请日：1999-05-20
申请人： MITSUBISHI ELECTRIC CORP , ORGANO KK , WATANABE M & CO LTD
发明人： NAGAMURA YOSHIKAZU , YOSHIOKA NOBUYUKI , YAMANAKA KOJI , KUSUHARA MASAKI
IPC分类号： B08B3/02 , B08B3/08 , B08B3/12 , G03F1/32 , G03F1/82 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To allow a small amount of a chemical solution to produce a removing effect comparable to or higher than the conventional effect and to reduce the amounts of chemicals and pure water used by removing foreign matter sticking to the surface of a photomask with water containing dissolved gaseous H2. SOLUTION: In a step 1, a photomask is washed with a hot mixed solution of sulfuric acid and hydrogen peroxide so as to degrade organic materials such as a resist and a solvent present on the surface of the photomask, to improve the wettability of the surface and to remove metallic impurities. In a step 2, the photomask is washed so as to remove the residual sulfuric acid and foreign matter sticking to the surface of the photomask. When a light shielding film formed on the photomask is a CrON film, fine particulate foreign matters sticking to the surface of the photomask are removed by megasonic ultrasonic treatment with water containing dissolved gaseous H2 or further containing a very small amount of ammonia. In a step 3, the washed photomask is dried.

66. 发明专利

JPH0974063A MARK FOR MEASUREMENT OF ACCURACY IN SUPERPOSITION, METHOD FOR CORRECTING DETECT OF THE MARK, PHOTOMASK HAVING THE MARK, AND MANUFACTURE AND EXPOSURE DEVICE FOR THE PHOTOMASK 失效
公开(公告)号：JPH0974063A
公开(公告)日：1997-03-18
申请号：JP11474696
申请日：1996-05-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： NARIMATSU KOICHIRO , YAMASHITA SHIGENORI , YOSHIOKA NOBUYUKI , SOEDA SHINYA , HACHISUGA ATSUSHI , TANIGUCHI KOJI , MIYAMOTO YUKI , SAITO TAKAYUKI , MINAMIDE AYUMI
IPC分类号： G03F1/36 , G03F1/42 , G03F7/20 , G03F9/00 , H01L21/027 , H05K1/02 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mark for measurement of accuracy in superposition where the influence of aberration is taken into consideration, by making each mark for measurement, which is made in the same manufacture process as the constituent part of a semiconductor device composed of two stacked layers, have a pattern which is affected by the same aberration as the time of having applied light to the constituent member. SOLUTION: The first measurement mark 100 is made through a gate oxide film 2 above a semiconductor substrate 1, and it is constituted of an auxiliary measurement pattern 100A of 0.4μm wide, along the sides of a square of 25μm×25μm, as a left pattern. The second measurement pattern 200 is made through an interlayer oxide film 3 above the first measurement mark 100, and plural pieces of punched patterns 200A of 0.5μm×0.5μm are arranged along the side of the square of 15μm×15μm. Accordingly, using the first measuring mark 100 and the second measuring mark 200, the observed detection signal has the same comatic aberration as that of the work line, the bit line, and the contact hole made within the semiconductor device.

67. 发明专利

JPH0831711A EXPOSURE METHOD USING ATTENUATION TYPE PHASE-SHIFT MASK 失效
公开(公告)号：JPH0831711A
公开(公告)日：1996-02-02
申请号：JP15841994
申请日：1994-07-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , G03F7/207 , H01L21/027 , G03F1/08
摘要： PURPOSE:To provide an exposure method using an attenuation type phase-shift mask capable of accurately exposing a specified pattern in the same process in all regions of a material to be exposed even when there is a stepped section in the material to be exposed. CONSTITUTION:The optimum value of the difference of a first distance h1 and a second distance h2 from the phase angle of exposure light transmitted through a second light transmission section 8 and a third light transmission section 10 and the hole size of the second light transmission section 8 and the third light transmission section 10. Accordingly, a resist film 14 can be exposured at the optimum place of a focus.

68. 发明专利

JPH0628230B2 失效
公开(公告)号：JPH0628230B2
公开(公告)日：1994-04-13
申请号：JP6625487
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO , WATAKABE YAICHIRO
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30 , G03F1/16

69. 发明专利

JPH063804A PRODUCTION OF LOW-REFLECTION MOSI PHOTOMASK 失效
公开(公告)号：JPH063804A
公开(公告)日：1994-01-14
申请号：JP16275892
申请日：1992-06-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU
IPC分类号： G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , G03F1/08
摘要： PURPOSE:To provide the process for production of the low-reflection MoSi photomask improved in such a manner that foreign matter defects are decreased to zero. CONSTITUTION:An MoSi film 3 is formed on a substrate 1. An MoS oxide film 4 is formed on the MoSi film 3. A resist 6 having 1 to 2 selection ratio with the MoSi film 3 is applied by reactive ion etching using gaseous CF3+O2 on the MoSi oxide film 4. The resist 6 is patterned. The MoSi oxide film 4 and the MoSi film 3 are etched by using the gaseous CF3+O2 with the patterned resist 6 as a mask.

70. 发明专利

JPH04217314A METHOD OF FORMING X-RAY MASK 失效
公开(公告)号：JPH04217314A
公开(公告)日：1992-08-07
申请号：JP40304690
申请日：1990-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To improve the connection accuracy between patterns and the arrangement accuracy by constituting the entire forming process out of a process of enlarging a pattern and forming it on a reticle, a process of reducing the pattern and transcribing it on a resist, and a process of patterning an absorber film. CONSTITUTION:A pattern is enlarged and formed on a reticle 5 by an electron beam exposer. It is inspected using a pattern defect tester, and the defects of the pattern data or the defects by the foreign matter occurring in manufacture of a reticle are detected and modified. The pattern on the reticle 5 is reduced and transcribed on a photoresist 4', by the reduction/transcription device using an ArF excimer laser, so as to form a desired resist pattern. Next, as an etching mask, the absorber film 3 such as W, Ta, etc., at the bed is selectively etched, thus an X-ray mask is completed.

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