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51. 发明专利

JP2003031171A Electron beam device, and manufacturing method of device using the same 审中-公开
标题翻译：电子束装置，以及使用该装置的装置的制造方法
公开(公告)号：JP2003031171A
公开(公告)日：2003-01-31
申请号：JP2001217858
申请日：2001-07-18
申请人： Ebara Corp , Nikon Corp , 株式会社ニコン , 株式会社荏原製作所
发明人： HAMASHIMA MUNEKI , NAKASUJI MAMORU , KATO TAKAO , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G21K1/02 , G21K5/04 , H01J9/14 , H01J37/09 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device enabled to obtain multi-beam by using an electron gun having one cathode, and to provide a manufacturing method of a device using the electron beam device. SOLUTION: The electron beam device irradiates an electron beam emitted from a cathode 63 having a plurality of protrusions to a plurality of openings of a plate with openings 3, and reduce-projects the electron beam passed through the openings on a sample. The plurality of openings on the plate with openings 3 are formed by etching a Si single crystal plate 21. The plurality of openings on the plate with openings 3 can be formed by metal coating. A square nock hole, for the positioning of θ-direction, is formed to the plate with openings 3, or the outer form of the plurality of openings on the plate with openings 3 has sides which are parallel with X-axis or Y-axis.
摘要翻译：要解决的问题：提供一种能够通过使用具有一个阴极的电子枪来获得多光束的电子束装置，并提供使用电子束装置的装置的制造方法。解决方案：电子束装置将具有多个突起的阴极63发射的电子束照射到具有开口3的板的多个开口中，并且减少通过样品上的开口的电子束。通过蚀刻Si单晶板21形成具有开口3的板上的多个开口。具有开口3的板上的多个开口可以通过金属涂层形成。在具有开口3的板上形成用于定位θ方向的方形孔，或者具有开口3的具有开口3的板上的多个开口的外部形状具有与X轴或Y轴平行的侧面。

52. 发明专利

JP2007281492A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2007281492A
公开(公告)日：2007-10-25
申请号：JP2007120564
申请日：2007-05-01
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , NOMICHI SHINJI
IPC分类号： H01L21/66 , G03F1/84 , G03F1/86 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To save a sample transport means between a semiconductor manufacturing apparatus and a detection device, reduce the installation area, reduce the total cost and decrease the probability of the sample contamination by sharing loading means and unloading means of the semiconductor manufacturing apparatus and the detection device such as a chemical mechanical polisher for samples such as wafers.
SOLUTION: The detection device 25 is provided with a built in chemical mechanical polisher 100 for samples such as wafers. The polisher 100 is further equipped with a loading unit 21, a chemical mechanical polishing unit 22, a cleaning unit 23, a drying unit 24, and an unloading unit 26. Respective treatments are performed by the respective units in the polisher 100 and treated samples are transported to a successive step 109. A sample loading means, a sample unloading means and a transporting means are not necessary for the movement of the samples between the respective units. A stencil mask is irradiated from the rear side with a planar beam; the transmitted beam is mapped and projected; and images are detected by a TDI detector. Therefore, since a large number of pixels can be simultaneously imaged, detection can be made with a high throughput.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了在半导体制造装置和检测装置之间保存样品传送装置，通过共享装载装置和卸载装置来减少安装面积，降低总成本并降低样品污染的可能性半导体制造装置和用于诸如晶片的样品的化学机械抛光机的检测装置。解决方案：检测装置25设置有用于诸如晶片的样品的内置化学机械抛光机100。抛光机100还配备有装载单元21，化学机械抛光单元22，清洁单元23，干燥单元24和卸载单元26.各种处理由抛光机100中的各单元执行，并且处理样品被输送到连续的步骤109.样品加载装置，样品卸载装置和输送装置对于样品在各个单元之间的移动是不必要的。从后侧用平面光束照射模板掩模; 发射光束被映射和投影; 并且图像由TDI检测器检测。因此，由于可以同时成像大量的像素，因此可以以高产量进行检测。版权所有（C）2008，JPO＆INPIT

53. 发明专利

JP2007048754A Inspection device with charged particle beam and device manufacturing method using inspection device 有权
标题翻译：具有充电颗粒光束的检查装置和使用检查装置的装置制造方法
公开(公告)号：JP2007048754A
公开(公告)日：2007-02-22
申请号：JP2006232088
申请日：2006-08-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU , KANEUMA TOSHIFUMI , SOFUGAWA TAKUJI , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , OWADA SHIN , NISHIFUJI MUTSUMI , HAMASHIMA MUNEKI , TAKAGI TORU
IPC分类号： H01J37/28 , G01N23/225 , H01J37/147 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a flaw inspection method equipped with an enhanced throughput capable of precluding a crosstalk between a plurality of electron beams and leading the discharged secondary electrons efficiently to a detector. SOLUTION: The apparent angle on a specimen surface 1010 viewed from an objective lens is determined from the aperture angle and the magnification at the image surface 1005 of secondary electrons, and the receiving angle at the specimen surface is determined from the obtained apparent angle, the initial energy of the secondary electrons and the beam potential of the objective lens, followed by determining the yield of the secondary electrons on the basis of the obtained receiving angle, and on the basis of the resolution decided by the aperture angle, the spacing of irradiation with adjoining primary electron beams is separated to a distance or more which does not present a problem of crosstalk. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有能够排除多个电子束之间的串扰并且将放电的二次电子有效地引导到检测器的增强的吞吐量的缺陷检查方法。解决方案：从物镜观察的样品表面1010上的视角根据二次电子的图像表面1005的孔径角和倍率确定，并且从获得的表观上确定样品表面处的接收角度角度，二次电子的初始能量和物镜的光束电位，然后基于获得的接收角确定二次电子的产量，并且基于由孔径角决定的分辨率，相邻的一次电子束的照射间隔被分离到一定距离以上，这不会产生串扰的问题。版权所有（C）2007，JPO＆INPIT

54. 发明专利

JP2006317466A Defect inspection method 有权
标题翻译：缺陷检查方法
公开(公告)号：JP2006317466A
公开(公告)日：2006-11-24
申请号：JP2006219104
申请日：2006-08-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMASHIMA MUNEKI , HATAKEYAMA MASAKI , NOMICHI SHINJI , SATAKE TORU , NAKASUJI MAMORU , MURAKAMI TAKESHI , WATANABE KENJI
IPC分类号： G01N23/225 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection method that can appropriately control a charge amount of a surface of a sample even when the irradiation current value for enlarging the throughput or the like is increased, obtains clear image data with small distortion, and can perform an inspection with high reliability.
SOLUTION: The defect inspection method employs an inspection device having a beam source 1 for irradiating a sample 10 with a charged particle beam 2 and a detector 18 for detecting a charged particle from the sample surface. The surface of the sample 10 is coated with a resistance film 42 having a predetermined electric resistance value, the charged particle beam 2 is radiated to the sample 10, and a secondary charged particle or the like generated from the sample surface is detected by the detector 18.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使当用于扩大吞吐量等的照射电流值增加时也可以适当地控制样品表面的电荷量的缺陷检查方法，获得具有小失真的清晰图像数据，可以高可靠性进行检查。解决方案：缺陷检查方法采用具有用于向样品10照射带电粒子束2的光束源1和用于检测来自样品表面的带电粒子的检测器18的检查装置。样品10的表面涂覆有具有预定电阻值的电阻膜42，将带电粒子束2照射到样品10，并且由检测器检测从样品表面产生的二次带电粒子等 18.版权所有（C）2007，JPO＆INPIT

55. 发明专利

JP2006278029A Electron beam device and method for manufacturing device using it 审中-公开
标题翻译：电子束装置及使用其制造装置的方法
公开(公告)号：JP2006278029A
公开(公告)日：2006-10-12
申请号：JP2005092314
申请日：2005-03-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , KAGA TORU
IPC分类号： H01J37/29 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device carrying out evaluation of a test piece without dropping the throughput even when an evaluated pattern is made fine and to provide a method for manufacturing the device using it.
SOLUTION: The electron beam device irradiates a plurality of primary beams on the test piece W, separates a plurality of secondary beams emitted from the test piece from the primary beams by a beam separator 20 and has the secondary beams make incidence in a detector 28 by enlarging the distance between a plurality of secondary beams by a magnifying optical system 5. The electron beam device is provided with a compensating lens 16 compensating the axial chromatic aberration in a plurality of primary beams and the beam separator 20 is installed between the compensating lens 16 and the test piece W.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供一种电子束装置，即使在评价图案精细化的同时也不会降低吞吐量，并且提供使用该试样的装置的制造方法。解决方案：电子束装置照射测试件W上的多个主光束，通过光束分离器20将从试片发射的多个次光束与主光束分离，并且将次光束发射到检测器28通过放大光学系统5放大多个次级光束之间的距离。电子束装置设置有补偿多个主光束中的轴向色差的补偿透镜16，并且光束分离器20安装在补偿透镜16和测试片W.版权所有（C）2007，JPO＆INPIT

56. 发明专利

JP2006277996A Electron beam device and device manufacturing method using it 审中-公开
标题翻译：电子束装置和使用它的装置制造方法
公开(公告)号：JP2006277996A
公开(公告)日：2006-10-12
申请号：JP2005091514
申请日：2005-03-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , MURAKAMI TAKESHI , KARIMATA TSUTOMU
IPC分类号： H01J37/29 , G01N23/225 , H01J37/145 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide objective lenses preventing discharging between an electrostatic lens and a test piece, which can have high voltage applied to them and are provided with parameters which can be adjusted so that the absolute value of axial chromatic aberration in the objective lenses and the absolute value of axial chromatic aberration in an axial chromatic aberration compensating lens are equivalent.
SOLUTION: The electron beam device is provided with the objective lenses focusing the electron beams and irradiating the test piece. The objective lenses are provided with at least one conical electrode with a radius which is made smaller going toward the test piece side and an axial symmetrical electrode. The axial symmetrical electrode is an approximately grounded electrode installed more to the test piece side than the conical electrode and is installed in a position making the intensity of an electric field smaller on a test piece surface. Furthermore, a multi-pole lens producing negative axial chromatic aberration and a voltage control apparatus are provided and the absolute value of the axial chromatic aberration in the objective lenses and the axial chromatic aberration in the multi-pole lens are made equivalent by having the voltage of the axial symmetrical electrode adjusted by the voltage control device or having both the voltage of the axial symmetrical electrode and the voltage of at least one of the conical electrodes adjusted.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供防止静电透镜和测试片之间的放电的物镜，其可以施加高电压并提供可以调节的参数，使得轴向色差的绝对值物镜和轴向色差补偿透镜中的轴向色差的绝对值是等效的。解决方案：电子束装置设有聚焦电子束并照射试片的物镜。物镜设置有至少一个圆锥形电极，其半径越小，朝向测试片侧和轴向对称电极。轴向对称电极是比锥形电极更多地安装在测试片侧的大致接地电极，并且被安装在使得测试片表面上的电场强度更小的位置。此外，提供了产生负轴向色差的多极镜头和电压控制装置，并且通过使电极中的电压使多极透镜中的轴向色差的绝对值和多极透镜中的轴向色差成为等效的由电压控制装置调节的或具有轴对称电极的电压和调整的至少一个锥形电极的电压的轴向对称电极。版权所有（C）2007，JPO＆INPIT

57. 发明专利

JP2005286161A Method and apparatus for shape restoration, and manufacturing method of semiconductor device using them 审中-公开
标题翻译：形状恢复的方法和装置，以及使用它们的半导体器件的制造方法
公开(公告)号：JP2005286161A
公开(公告)日：2005-10-13
申请号：JP2004099127
申请日：2004-03-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SATAKE TORU , NOMICHI SHINJI , HATAKEYAMA MASAKI , WATANABE KENJI
IPC分类号： H01L21/66 , C23C16/00 , C23F1/00 , G01R31/307 , H01L21/311 , H01L21/3205 , H01L23/52
CPC分类号： H01L22/22 , G01R31/307 , H01L21/31116 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for the shape restoration of a pattern which has never been carried out because of the absence of a proper method particularly in a semiconductor device regarding a method for realizing the restoration of the defect of a substrate, and to provide a manufacturing method of the manufacturing device where they are applied. SOLUTION: The method for restoring the shape of the pattern of the substrate having an imperfect pattern comprises; (a) a step of detecting the imperfect pattern by inspecting the substrate; and (b) a step of restoring the shape of the pattern by etching or depositing the detected imperfect pattern with radiation. The apparatus for restoring the shape of the via hole of a wafer having an imperfect via hole includes a defect detection part for detecting the imperfect via hole, and an etching part for etching the imperfect via hole with a fast atom beam. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种由于没有适当的方法而从未进行的图案的形状恢复的方法和装置，特别是在半导体器件中关于实现恢复的方法的方法并且提供应用它们的制造装置的制造方法。解决方案：用于恢复具有不完美图案的衬底图案的形状的方法包括：（a）通过检查基板检测不完美图案的步骤; 和（b）通过用辐射蚀刻或沉积检测到的不完美图案来恢复图案的形状的步骤。用于恢复具有不完美通孔的晶片的通孔形状的装置包括用于检测不完美通孔的缺陷检测部分和用快速原子束蚀刻不完美通孔的蚀刻部分。版权所有（C）2006，JPO＆NCIPI

58. 发明专利

JP2005158642A Pattern evaluation method, and manufacturing method of device 审中-公开
标题翻译：模式评估方法及其制造方法
公开(公告)号：JP2005158642A
公开(公告)日：2005-06-16
申请号：JP2003398754
申请日：2003-11-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , KATO TAKAO
IPC分类号： G01N23/225 , H01J37/145 , H01J37/21 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern evaluation method using an electron beam device, having good beam resolution, eliminating the problem of deviation of rotation attitude, capable of inspecting defects of masks with high throughput.
SOLUTION: In order to evaluate the pattern of a sample K, an electron beam 2a emitted from an electron gun 37 is made incident on a sample face Ka through an object lens 10. The object lens is composed of a flat plate-shaped electrode 10c having a hole with an optical axis as a center arranged in parallel with the sample face, and an electromagnetic lens 10a having a gap 10b at sample side. In order to inspect the mask, the distances between a plurality of electron beams passed through the mask are magnified by a magnifying lens and converted into an electric signal. The light signal is converted into electric signal by a photomultiplier, and a two dimensional image is formed depending on a scanning signal and the above electric signal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用电子束装置的图案评估方法，具有良好的光束分辨率，消除了旋转姿态偏离的问题，能够以高通量检查掩模的缺陷。解决方案：为了评估样品K的图案，通过物镜10将从电子枪37发射的电子束2a入射到样品面Ka上。物镜由平板状物体构成，具有以样品面平行布置的以光轴为中心的孔的圆形电极10c和在样品侧具有间隙10b的电磁透镜10a。为了检查掩模，通过掩模的多个电子束之间的距离被放大镜放大并转换为电信号。光信号由光电倍增管转换为电信号，根据扫描信号和上述电信号形成二维图像。版权所有（C）2005，JPO＆NCIPI

59. 发明专利

JP2005064335A Inspecting and recovering methods of semiconductor integrated circuit, and apparatus therefor 审中-公开
标题翻译：半导体集成电路的检测和恢复方法及其设备
公开(公告)号：JP2005064335A
公开(公告)日：2005-03-10
申请号：JP2003294557
申请日：2003-08-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TERAO KENJI , NOMICHI SHINJI , SATAKE TORU , MURAKAMI TAKESHI
IPC分类号： H01L21/66 , H01J37/28 , H01J37/305 , H01J37/317 , H01L21/027 , H01L21/3205 , H01L21/82 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus whereby the inspection and recovery of defects are performed at proper speeds by using charged-particle beams having the same diameter.
SOLUTION: The wiring inspecting and recovering apparatus for inspecting and recovering the wiring portion of an integrated circuit formed on a semiconductor wafer 20 has a wiring-defect-portion sensing means for so inspecting the wiring pattern of the integrated circuit by using a charged-particle beam 34 fed from a charged-particle source 12 as to sense a wiring-defect portion, a wiring removing means for so etching by the irradiation of the charged-particle beam 34 at least one of the wiring-defect portion and the peripheral portion thereof as to remove them therefrom, an organic gas container 24, a gas gun 26 for so spraying an organic gas as to bring the atmosphere of at least the vicinity of the removed wiring-portion into the organic gas, a film forming means for forming a film in the removed wiring-portion by the irradiation of the charged-particle beam, and a wiring shaping and processing means for so etching protruding portions by the irradiation of the charged-particle beam as to form a matched wiring-portion.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过使用具有相同直径的带电粒子束以适当速度进行缺陷检查和回收的方法和装置。解决方案：用于检查和恢复形成在半导体晶片20上的集成电路的布线部分的布线检查和恢复装置具有布线缺陷部分检测装置，用于通过使用从带电粒子源12馈送以感测布线缺陷部分的带电粒子束34，用于通过照射带电粒子束34进行蚀刻的布线去除装置，至少一个布线缺陷部分和其周边部分从其中除去，有机气体容器24，用于喷射有机气体的气枪26将至少将去除的配线部分的气氛带入有机气体中的成膜装置用于通过照射带电粒子束在去除的配线部分中形成膜;以及布线成形和处理装置，用于通过照射带电粒子bea来蚀刻突出部分以形成匹配的布线部分。版权所有（C）2005，JPO＆NCIPI

60. 发明专利

JP2004363085A Inspection apparatus by charged particle beam and method for manufacturing device using inspection apparatus 审中-公开
公开(公告)号：JP2004363085A
公开(公告)日：2004-12-24
申请号：JP2004031749
申请日：2004-02-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI SHINJI , SATAKE TORU , SOFUGAWA TAKUJI , KANEUMA TOSHIFUMI , HATAKEYAMA MASAKI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , SUEMATSU KENICHI , TANABE YUTAKA , TAJIMA RYO , TOYAMA KEIICHI
IPC分类号： G01B15/00 , G01N23/20 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/09 , H01J37/12 , H01J37/147 , H01J37/153 , H01J37/16 , H01J37/18 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , H01J37/29 , H01L21/66
CPC分类号： G01N23/225 , H01J37/05 , H01J37/28 , H01J2237/2441 , H01J2237/2446 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a system for further increasing an inspection speed of an inspection apparatus in an SEM system, namely for increasing throughput. SOLUTION: The inspection apparatus for inspecting the surface of a substrate creates a crossover from electrons generated from an electron source 25-1, then, an image is formed with a desired magnification in the direction of a sample W, and the crossover is created. When the crossover is passed, an electron that becomes noise is removed from the crossover by an aperture, the crossover is set to have a desired magnification, an adjustment is made so that the crossover becomes a parallel electron beam, and a substrate is irradiated with light in a desired sectional shape. Electron rays are created so that irregularities in illumination in the electron rays is 10% or less. Electrons discharged from the sample W are detected by a detector 25-11. COPYRIGHT: (C)2005,JPO&NCIPI

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