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1. 发明专利

JP2004363085A Inspection apparatus by charged particle beam and method for manufacturing device using inspection apparatus 审中-公开
公开(公告)号：JP2004363085A
公开(公告)日：2004-12-24
申请号：JP2004031749
申请日：2004-02-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI SHINJI , SATAKE TORU , SOFUGAWA TAKUJI , KANEUMA TOSHIFUMI , HATAKEYAMA MASAKI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , SUEMATSU KENICHI , TANABE YUTAKA , TAJIMA RYO , TOYAMA KEIICHI
IPC分类号： G01B15/00 , G01N23/20 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/09 , H01J37/12 , H01J37/147 , H01J37/153 , H01J37/16 , H01J37/18 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , H01J37/29 , H01L21/66
CPC分类号： G01N23/225 , H01J37/05 , H01J37/28 , H01J2237/2441 , H01J2237/2446 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a system for further increasing an inspection speed of an inspection apparatus in an SEM system, namely for increasing throughput. SOLUTION: The inspection apparatus for inspecting the surface of a substrate creates a crossover from electrons generated from an electron source 25-1, then, an image is formed with a desired magnification in the direction of a sample W, and the crossover is created. When the crossover is passed, an electron that becomes noise is removed from the crossover by an aperture, the crossover is set to have a desired magnification, an adjustment is made so that the crossover becomes a parallel electron beam, and a substrate is irradiated with light in a desired sectional shape. Electron rays are created so that irregularities in illumination in the electron rays is 10% or less. Electrons discharged from the sample W are detected by a detector 25-11. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005332888A Device and method for shape correction 审中-公开
标题翻译：用于形状校正的装置和方法
公开(公告)号：JP2005332888A
公开(公告)日：2005-12-02
申请号：JP2004148175
申请日：2004-05-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAJIMA RYO , TERAO KENJI , TOYAMA KEIICHI , HIYAMA HIROKUNI
IPC分类号： G01N23/225 , B23K15/00 , H01L21/3205 , H01L21/66 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a shape correction device quickly restoring the defect of a wafer. SOLUTION: The shape correction device 300 is provided with: a stage 370 for mounting the specimen of an object to be inspected; a defect inspecting device 320 for detecting the defect of the specimen by irradiating energy beams for inspection against the wafer W mounted on the stage 370; a defect restoration device 340 arranged in parallel to the moving direction of the stage 370 with respect to the defect inspecting device 320 to restore the defect of the specimen by irradiating energy beams for restoration against the wafer W mounted on the stage 370; and a personal computer for controlling the defect restoration device 340 in accordance with the movement of the stage 370 so as to restore the defect detected by the defect inspecting device 320. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种快速恢复晶片缺陷的形状校正装置。形状校正装置300设置有：用于安装待检查物体的样本的台架370; 缺陷检查装置320，用于通过照射安装在台架370上的晶片W进行检查的能量束来检测样本的缺陷; 相对于缺陷检查装置320平行于台架370的移动方向布置的缺陷恢复装置340，通过照射安装在台架370上的晶片W的能量束来恢复样本的缺陷; 以及个人计算机，用于根据舞台370的移动来控制缺陷恢复装置340，以恢复由缺陷检查装置320检测到的缺陷。（C）2006年，JPO＆NCIPI

3. 发明专利

JP2014112087A Inspection device using charged particle beam, and method of manufacturing device using the inspection device 有权
标题翻译：使用充电颗粒束的检查装置以及使用检查装置制造装置的方法
公开(公告)号：JP2014112087A
公开(公告)日：2014-06-19
申请号：JP2013253948
申请日：2013-12-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOJI NOBUHARU , SATAKE TORU , SOFUGAWA TAKUJI , KANEUMA TOSHIFUMI , HATAKEYAMA MASAKI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , SUEMATSU KENICHI , TABE YUTAKA , TAJIMA RYO , TOYAMA KEIICHI
IPC分类号： G01N23/225 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To prevent unevenness of a charge amount on a substrate surface.SOLUTION: An electron beam inspection device for inspecting a substrate W by using an electron beam includes: an electron gun 59-6 for irradiating an inspected area of the substrate W; a detector 59-4 for detecting electrons emitted from the substrate W; and a pre-charge unit 59-5. The pre-charge unit 59-5 is at least one of: means of irradiating an area including an inspection area with an electron beam before irradiation of an electron beam; means of coating the area including the inspection area with a conductive film before irradiation of an electron beam; means of spraying negative gas of argon, oxygen or the like onto the surface of the substrate W during inspection; and means 59-21 of performing adjustment so as to be in a negative charge mode having irradiation energy of 3-5 keV; and means of performing adjustment so as to inspect a reflection electron in irradiation energy of 0.5-3 keV.
摘要翻译：要解决的问题：防止基板表面上的电荷量的不均匀。解决方案：用于通过使用电子束检查基板W的电子束检查装置包括：用于照射基板的检查区域的电子枪59-6 瓦; 用于检测从衬底W发射的电子的检测器59-4; 和预充电单元59-5。预充电单元59-5至少是以下中的至少一种：在电子束照射之前用电子束照射包括检查区域的区域的装置; 在电子束照射之前用导电膜涂覆包括检查区域的区域的装置; 在检查期间将氩气，氧气等的负气体喷射到基板W的表面上的方法; 以及进行调整以使其具有照射能量为3-5keV的负电荷模式的装置59-21; 以及进行调整以在0.5-3keV的照射能量下检查反射电子的装置。

4. 发明专利

JP2014239050A 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法审中-公开
标题翻译：通过充电颗粒的检查装置和使用其的装置制造方法
公开(公告)号：JP2014239050A
公开(公告)日：2014-12-18
申请号：JP2014147706
申请日：2014-07-18
申请人：株式会社荏原製作所 , Ebara Corp
发明人： NOJI NOBUHARU , SATAKE TORU , SOFUGAWA TAKUJI , KANEUMA TOSHIFUMI , HATAKEYAMA MASAKI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , SUEMATSU KENICHI , TABE YUTAKA , TAJIMA RYO , TOYAMA KEIICHI
IPC分类号： H01J37/20 , G01N23/225 , H01J37/29 , H01L21/66
摘要：【課題】試料表面の帯電量のむらを防止することができる検査装置を提供する。【解決手段】一次電子ビームを試料Wに照射していないときに、電極59.18と電荷検出器59.23とを切換スイッチ59.19を介して接続した状態で、該電極59.18の帯電量を電荷検出器59.23により検出し、その後、切換スイッチ59.19を切り換えて電極59.18と電圧発生器59.21とを接続して、帯電量の電荷を相殺するための電圧を電圧発生器59.21から発生して電極59.18に印加する。上記した処理は、検出系59.4のCCD59.16が画像の1走査分を補足した後の空き時間に実行される。【選択図】図59
摘要翻译：要解决的问题：提供一种能够防止产生样品表面的不一致充电量的检查装置。解决方案：当样品W未被一次电子束照射时，电极59.18的充电量由电荷检测器 59.23在电极59.18通过转换开关59.19与充电检测器59.23连接的状态下，转换开关59.19然后被切换，电极59.18与电压发生器59.21连接，以产生电压从电压发生器59.21取消充电量的电荷并将电压施加到电极59.18。在检测系统59.4的CCD 59.16补充一次扫描的图像之后的空闲时间期间执行上述处理。

5. 发明专利

JP2009140935A Charged particle beam device and device manufacturing method using the same 有权
标题翻译：充电颗粒光束装置和使用其的装置制造方法
公开(公告)号：JP2009140935A
公开(公告)日：2009-06-25
申请号：JP2009019535
申请日：2009-01-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAJIMA RYO , WATANABE KENJI , HATAKEYAMA MASAKI , NOMICHI SHINJI
IPC分类号： H01J37/20 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam device in which observation and evaluation of the surface of a test piece can be made without charge up on the whole test piece, and to provide a method of manufacturing a semiconductor device using the same.
SOLUTION: The charged particle beam device includes means 1, 2, 3 which radiate primary charged particle beams to a test piece 19, a means which guides to a detector D secondary charged particle beams that have obtained information of the surface of the test piece 19 by radiation of the primary charged particle beams toward the test peace 19, and a means 14 which synthesizes the secondary charged particle beams guided to the detector D as an image. The charged particle beam device includes a measuring means 24 for measuring the electrostatic charge amount on the surface of the test piece 19 and electrostatic charge elimination means 6, 17 which reduce or eliminate the electrostatic charge amount on the surface of the test piece 19 based on the electrostatic charge amount measured by the measuring means 24.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种带电粒子束装置，其中可以在整个试样上对试件的表面进行观察和评估而无需充电，并且提供一种制造使用一样。解决方案：带电粒子束装置包括将初级带电粒子束辐射到测试片19的装置1,2,3，一种引导到检测器D的装置，二次带电粒子束已经获得了通过将初级带电粒子束照射到测试平台19的测试片19和合成被引导到检测器D作为图像的二次带电粒子束的装置14。带电粒子束装置包括测量装置24，用于测量试件19的表面上的静电荷量和静电电荷消除装置6,17，其基于以下方式减少或消除了在试片19的表面上的静电电荷量由测量装置24测量的静电电荷量。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008071492A Charged particle beam apparatus, and device manufacturing method using the apparatus 有权
标题翻译：充电颗粒光束装置和使用装置的装置制造方法
公开(公告)号：JP2008071492A
公开(公告)日：2008-03-27
申请号：JP2006246249
申请日：2006-09-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAJIMA RYO , WATANABE KENJI , HATAKEYAMA MASAKI , NOMICHI SHINJI
IPC分类号： H01J37/29 , G01N23/225 , H01J37/20 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus capable of observing and evaluating a surface of a sample in a state free from charge-up over the whole sample, and to provide a manufacturing method of a semiconductor device using the apparatus.
SOLUTION: The charged particle beam apparatus is provided with means 1, 2, 3 irradiating first charged particle beams toward a sample 19, a means for guiding second charged particle beams with surface information of the sample 19 obtained by irradiation toward the sample 19 of the first charged particle beams to a detector D, and a means 14 for compounding the second charged particle beams guided to the detector D as an image. The charged particle beam apparatus is also provided with a measuring means 24 for measuring an electrification charge volume of the surface of the sample 19, and electrification charge removing means 6, 17 for reducing or extinguishing the electrification charge volume on the surface of the sample 19.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在整个样品上以无电荷状态观察和评价样品表面的带电粒子束装置，并提供使用该方法的半导体器件的制造方法仪器。解决方案：带电粒子束装置设置有向样品19照射第一带电粒子束的装置1,2,3;用于通过照射到样品获得的样品19的表面信息来引导第二带电粒子束的装置 19个第一带电粒子束到检测器D，以及用于将引导到检测器D的第二带电粒子束作为图像进行复合的装置14。带电粒子束装置还设置有用于测量样品19的表面的带电电荷体积的测量装置24和用于减少或消除样品19的表面上的带电电荷体积的带电电荷去除装置6,17 版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2014182064A Inspection display device, defect discrimination method, and inspection display program 有权
标题翻译：检查显示设备，缺陷识别方法和检查显示程序
公开(公告)号：JP2014182064A
公开(公告)日：2014-09-29
申请号：JP2013057863
申请日：2013-03-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAJIMA RYO
IPC分类号： G01N23/225 , G01B11/30 , G01B15/04 , G01B15/08
摘要： PROBLEM TO BE SOLVED: To save the labor for defect discrimination.SOLUTION: An inspection display device comprises: a difference data calculation unit for comparing inspection image data generated from a detection result of the amount of secondary charged particles obtained by irradiating an inspection object with one of a charged particle and an electromagnetic wave as a beam with reference image data prepared in advance and calculating difference data in which difference between a gradation value of each pixel in the inspection image data and a gradation value of each pixel corresponding to the reference image data is reflected; and a display unit for displaying at least one of a numeric matrix constituted by reflecting each value of the difference data and a difference image constituted by reflecting each value of the difference data so that positive and negative of difference, which is the source of the difference data, is discriminated.
摘要翻译：要解决的问题：为了节省缺陷识别的劳动。解决方案：一种检查显示装置，包括：差分数据计算单元，用于将从通过照射检查对象获得的二次带电粒子的量的检测结果产生的检查图像数据与将带电粒子和电磁波中的一个作为具有参考图像数据的光束预先准备并计算差异数据，其中检查图像数据中的每个像素的灰度值与对应于参考图像的每个像素的灰度值之间的差异反映数据; 以及显示单元，用于显示通过反映差分数据的每个值构成的数字矩阵中的至少一个，以及通过反映差分数据的每个值构成的差分图像，使得作为差异源的差分的正和负数据被辨别。

8. 发明专利

JP2012119694A Inspection apparatus with charged particle beam and device manufacturing method using the same 有权
标题翻译：具有充电颗粒束的检查装置和使用其的装置制造方法
公开(公告)号：JP2012119694A
公开(公告)日：2012-06-21
申请号：JP2011283102
申请日：2011-12-26
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI SHINJI , SATAKE TORU , SOFUGAWA TAKUJI , KANEUMA TOSHIFUMI , HATAKEYAMA MASAKI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , SUEMATSU KENICHI , TABE YUTAKA , TAJIMA RYO , TOYAMA KEIICHI
IPC分类号： H01L21/66 , H01J37/22 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a technology enabling an SEM device to accelerate inspection speed.SOLUTION: Device manufacturing method using the inspection apparatus with charged particle beam comprises the steps of: moving a stage so that a lower left corner of a first search die in a lower part of a wafer is positioned nearly at a center of a camera, and obtaining a pattern matching template image; when a second search die is in a right adjacent side of the first search die, and a third search die is in an upper adjacent side of the second search die, moving the stage and conducting automatic pattern matching using the template image so that exact coordinate values of patterns for the second search die and the third search die are obtained; calculating moving amount of motion to an upper adjacent die with reference to a relationship between the second search die pattern matching coordinate and the third search die pattern matching coordinate and moving the stage to a coordinate where a pattern of an upper adjacent die to the first search die is expected to exist; and conducting the pattern matching using the template image so that an exact coordinate value of a searching pattern is repeatedly updated and obtained. Consequently, accuracy is improved.
摘要翻译：要解决的问题：提供使SEM装置能够加快检测速度的技术。＆lt; P＆gt;解决方案：使用带有带电粒子束的检查装置的装置制造方法包括以下步骤：移动台，使得晶片下部的第一搜索管芯的左下角几乎位于晶片的中心相机，并获得模式匹配模板图像; 当第二搜索模具位于第一搜索模具的右侧，并且第三搜索模具位于第二搜索模具的上部相邻侧时，移动平台并使用模板图像进行自动模式匹配，使得精确坐标获得第二搜索模具和第三搜索模具的图案的值; 参考第二搜索模具匹配坐标和第三搜索模具匹配坐标之间的关系，将移动的运动量计算到上部相邻模具，并将平台移动到上部相邻模具的图案到第一次搜索的坐标死亡预计会存在; 并使用模板图像进行图案匹配，使得重复地更新并获得搜索图案的精确坐标值。因此，精度提高。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008097902A Electron beam equipment and astigmatism adjustment method using the same 有权
标题翻译：电子束设备和使用该方法的异步调整方法
公开(公告)号：JP2008097902A
公开(公告)日：2008-04-24
申请号：JP2006276058
申请日：2006-10-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： WATANABE KENJI , MURAKAMI TAKESHI , TAJIMA RYO , HATAKEYAMA MASAKI , TSUNEOKA MASATOSHI
IPC分类号： H01J37/153 , H01J37/21
摘要： PROBLEM TO BE SOLVED: To adjust astigmatism rapidly with a simple algorithm by utilizing the auto focus evaluation value of an image acquired from a pattern formed in a sample.
SOLUTION: The electron beam equipment observes and evaluates the sample by applying electron beams to the sample W, and detecting secondary electrons, such as electrons, reflection electrons, and backscattering electrons, radiated from the sample. The electron beam equipment has an astigmatism adjustment means 17 for adjusting the astigmatism of electron beams and gives a correction voltage for maximizing the focus evaluation value obtained from the image of a pattern formed in the sample W to the astigmatism adjustment means 17. The astigmatism adjustment means 17 is a multi-pole having a plurality of pairs of electrodes or coils that oppose with the light axis of electron beams as a center.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过利用从样品中形成的图案获取的图像的自动聚焦评估值，通过简单的算法快速调节像散。解决方案：电子束设备通过对样品W施加电子束来观察和评估样品，并检测从样品辐射的二次电子，如电子，反射电子和反向散射电子。电子束设备具有用于调整电子束的像散的像散调节装置17，并且给出用于使从样品W中形成的图案的图像获得的聚焦评估值最大化到像散调节装置17的校正电压。散光调节装置17是具有多个以电子束的光轴为中心的电极或线圈对的多极。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007299904A Semiconductor device and its inspection method 审中-公开
标题翻译：半导体器件及其检测方法
公开(公告)号：JP2007299904A
公开(公告)日：2007-11-15
申请号：JP2006126146
申请日：2006-04-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAGA TORU , TAJIMA RYO , TERAO KENJI , NOMICHI SHINJI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which the existence of a short circuit failure, short circuit resistance, open circuit resistance, and the dimensional margin of defective conduction resistance can be inspected, and to provide its inspection method.
SOLUTION: In a semiconductor device comprising a TEG group composed of one or more TEGs each having wiring 141, 142;151, 152;161 and 162 at ground potential and wiring 11, 12 and 13 at floating potential, the width and interval of the wiring are identical in each TEG, but one of the width and interval is different between different TEGs. The existence of wiring defective regions in the TEG of the semiconductor device is detected by a potential contrast method based on the amount of secondary electrons emitted from the TEG by irradiating each TEG with an electron beam.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中可以检查存在短路故障，短路电阻，开路电阻和导电电阻不良的尺寸裕度的半导体器件，并提供其检查方法。解决方案：在包括由一个或多个TEG构成的TEG组的半导体器件中，每个TEG具有接地电位的布线141,142; 151,152,161和162以及浮动电位的布线11,12,13，宽度和每个TEG中布线的间隔相同，但不同TEG之间的宽度和间隔之一是不同的。基于通过用电子束照射每个TEG从TEG发射的二次电子的量，通过电位对比方法来检测半导体器件的TEG中布线缺陷区的存在。版权所有（C）2008，JPO＆INPIT

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