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31. 发明专利

JP2013012624A Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：JP2013012624A
公开(公告)日：2013-01-17
申请号：JP2011145164
申请日：2011-06-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： INOUE YOSHIHARU , MORIMOTO MICHIKAZU , MATSUMOTO TAKESHI , ONO TETSUO , KANEKIYO TOKIMITSU , YAKUSHIJI MAMORU , MIYAJI MASAKAZU
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method capable of suppressing foreign particles due to increase in the number of processed sheets of the object to be processed in plasma processing using depositional gas.SOLUTION: In a plasma processing method, etching on an object to be processed mounted on a sample stage provided in a processing chamber is conducted by generating plasma from depositional gas introduced into the processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied. In the plasma processing method, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to the plasma and a second period during which the object to be processed is exposed to the plasma and an etching rate for the object to be processed is lower than that in the first period.
摘要翻译：要解决的问题：提供一种等离子体处理方法，其能够使用沉积气体在等离子体处理中由于待处理物体的加工片材数量的增加而抑制异物。解决方案：在等离子体处理方法中，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于处理室中，对安装在处理室中的样品台上的被处理物进行蚀刻在施加射频功率的状态下的等离子体。在等离子体处理方法中，在蚀刻条件下蚀刻待处理对象，其中处理室的内壁上的沉积膜通过重复将待处理对象暴露于等离子体的第一周期而变为非晶体，第二周期待处理对象暴露于等离子体的期间，对被处理物的蚀刻速度低于第一期间的蚀刻速度。版权所有（C）2013，JPO＆INPIT

32. 发明专利

JP2011100822A Method for processing semiconductor device 审中-公开
标题翻译：加工半导体器件的方法
公开(公告)号：JP2011100822A
公开(公告)日：2011-05-19
申请号：JP2009253910
申请日：2009-11-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ONO TETSUO , MOROOKA SATORU
IPC分类号： H01L29/78 , H01L21/306 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/28123 , H01L21/31111 , H01L21/31122 , H01L29/495 , H01L29/517
摘要： PROBLEM TO BE SOLVED: To provide a method for processing a minute semiconductor device, and particularly to provide a processing method suitable for miniaturization of a device having a structure normally called a high-k/metal gate.
SOLUTION: An insulation film formed on a Si substrate and containing Hf or Zr and a deposited film present on the upper or lower layer thereof or in the film are removed by repeating dry etching and wet etching one or more times by putting the wet etching first.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种微型半导体器件的处理方法，特别是提供适合于具有通常称为高k /金属栅极的结构的器件的小型化的处理方法。解决方案：通过重复干法蚀刻和湿蚀刻一次或多次来除去形成在Si衬底上并含有Hf或Zr的沉积膜和存在于其上层或下层中的沉积膜的绝缘膜，首先湿式蚀刻。版权所有（C）2011，JPO＆INPIT

33. 发明专利

JP2010045171A Semiconductor processing method 有权
标题翻译：半导体处理方法
公开(公告)号：JP2010045171A
公开(公告)日：2010-02-25
申请号：JP2008207902
申请日：2008-08-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ONO TETSUO , SAITO TAKESHI
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/8238 , H01L27/092 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To vertically and finely process a semiconductor having a structure where metal films and polysilicon Si are deposited on a high-dielectric constant insulating film.
SOLUTION: In a semiconductor processing method, etching processing using resist 108 formed on a polysilicon film is performed on the polysilicon film, and first and second metal films in a plasma atmosphere, wherein an insulating film 102 is formed on a semiconductor substrate and contains Hf or Zr, the first and second metal films 103 and 104 are formed side by side on the insulating film and differ in work function, and the polysilicon film 105 is deposited and formed on the first and second metal films. After the etching of the polysilicon film on the second metal film whose etching is finished earlier among the polysilicon films on the plurality of kinds of metal films, a gas containing HBr and oxygen is used as a processing gas.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：将具有金属膜和多晶硅Si的结构的半导体垂直且精细地加工在高介电常数绝缘膜上。解决方案：在半导体处理方法中，在多晶硅膜上进行使用形成在多晶硅膜上的抗蚀剂108的蚀刻处理，以及等离子体气氛中的第一和第二金属膜，其中绝缘膜102形成在半导体衬底上并且包含Hf或Zr，第一和第二金属膜103和104并排地形成在绝缘膜上并且功函数不同，并且多晶硅膜105沉积并形成在第一和第二金属膜上。在多种金属膜之间的多晶硅膜中蚀刻成熟的第二金属膜上蚀刻多晶硅膜之后，使用含有HBr和氧气的气体作为处理气体。版权所有（C）2010，JPO＆INPIT

34. 发明专利

JP2010025836A Visual inspection method, visual inspection device, semiconductor inspection device, and semiconductor wafer cross-section inspection device 审中-公开
标题翻译：视觉检查方法，视觉检查装置，半导体检查装置和半导体波形截面检查装置
公开(公告)号：JP2010025836A
公开(公告)日：2010-02-04
申请号：JP2008189507
申请日：2008-07-23
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： IWAKOSHI TAKENAO , ONO TETSUO , MORITA KAZUHIRO
IPC分类号： G01N23/225 , G01B15/04 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a visual inspection device capable of intuitively and quantitatively evaluating fluctuation of complex structures of semiconductor devices.
SOLUTION: The visual inspection device comprises an image detection section 6 detecting an image of inspected material, an image processing section 91 processing the detected image, an image detection section 10 equipped with a scan control section having a beam control system 92 and a stage control system 93 to scan the inspected material, and an visual inspection processing section 20 inspecting an appearance from the detected image, wherein the visual inspection processing section 10 has a representative data preparing processing function 212 in which the resulting two or more images are overlapped to obtain a representative value (representative value data μ(x, y)) at each point (x, y) of images, a fluctuation data preparing processing function 213 in which an allowable range value (fluctuation data σ(x, y)) is obtained at each point (x, y) of two or more images, and a determination processing function 214 in which acceptance of an inspection object is determined on the basis of the representative value data and the fluctuation data.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够直观且定量地评估半导体器件的复杂结构的波动的目视检查装置。视觉检查装置包括检测被检查材料的图像的图像检测部分6，处理检测到的图像的图像处理部分91，配备有具有光束控制系统92的扫描控制部分的图像检测部分10和用于对被检查材料进行扫描的台面控制系统93，以及从检测图像检查外观的目视检查处理部20，其中，目视检查处理部10具有代表数据准备处理功能212，其中得到的两个以上图像为重叠以获得图像的每个点（x，y）处的代表值（代表值数据μ（x，y）），波动数据准备处理功能213，其中允许范围值（波动数据σ（x，y））在两个或多个图像的每个点（x，y）处获得，以及确定处理功能214，其中基于的代表值数据和波动数据。版权所有（C）2010，JPO＆INPIT

35. 发明专利

JP2005093850A Plasma processing apparatus and method for cleaning vacuum container 审中-公开
标题翻译：等离子体处理装置和清洁真空容器的方法
公开(公告)号：JP2005093850A
公开(公告)日：2005-04-07
申请号：JP2003327293
申请日：2003-09-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ONO TETSUO , ITABASHI NAOSHI , KIKKAI MOTOHIKO , SHIMOMURA TAKAHIRO
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To shorten the cleaning time of materials stacked in a processing apparatus using plasma. SOLUTION: A suction type cleaner 109 is installed in a vacuum container 103 for generating plasma to perform suction cleaning of the inside of the container 103 while leading inert gas from a gas lead-in pipe 114 into the container 103 so that pressure in the container 103 is fixedly held at almost one pressure. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：缩短堆叠在使用等离子体的处理装置中的材料的清洗时间。解决方案：吸入式清洁器109安装在用于产生等离子体的真空容器103中，以将惰性气体从气体引入管114引入容器103中，从而对容器103的内部进行抽吸清洗，使得压力在容器103中固定地保持几乎一个压力。版权所有（C）2005，JPO＆NCIPI

36. 发明专利

JP2004214609A Method of treating plasma processing apparatus 有权
标题翻译：处理等离子体加工装置的方法
公开(公告)号：JP2004214609A
公开(公告)日：2004-07-29
申请号：JP2003345974
申请日：2003-10-03
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHIRAYONE SHIGERU , ONO TETSUO , ITABASHI NAOSHI , KIKKAI MOTOHIKO , ABE TAKAHIRO , SHIMOMURA TAKAHIRO , KITSUNAI HIROYUKI
IPC分类号： H05H1/46 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To remove aluminum-based reaction products, aluminum sputtered from material members inside the process chamber or the like, adhering inside the process chamber. SOLUTION: A method of treating a plasma processing apparatus is constituted such that high-frequency power is applied to a silicon wafer 17 loaded on an object-to-be-processed loading electrode 4, while hydrogen bromide gas and chlorine gas are introduced into the inside of the process chamber 1 to generate plasma to remove aluminum-based deposits adhering inside the process chamber, wherein the plasma processing apparatus 1 comprises plasma-generating means 3, 8, 10, 13 to 15 for generating plasma inside the process chamber, a high-frequency-power applying means 18 for applying high-frequency power to an object 17 to be processed, the process chamber 1 which is connected to an evacuation device 7 to evacuate the inside, and a gas feeding unit (not shown in the drawing). COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：从处理室内部的材料部件溅射的铝基反应产物中去除，粘附在处理室内部。解决方案：处理等离子体处理装置的方法被构造成使得高频功率被施加到装载在待处理物体上的负载电极4上的硅晶片17，而溴化氢气体和氯气是引入处理室1的内部以产生等离子体以除去附着在处理室内的铝基沉积物，其中等离子体处理装置1包括用于在工艺中产生等离子体的等离子体产生装置3,8,10,13至15 用于将高频电力施加到待处理物体17的高频电力施加装置18，连接到排气装置7以将内部抽真空的处理室1和气体供给单元（未示出）在图中）。版权所有（C）2004，JPO＆NCIPI

37. 发明专利

JP2006245600A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2006245600A
公开(公告)日：2006-09-14
申请号：JP2006110719
申请日：2006-04-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOKOGAWA KATANOBU , ITABASHI NAOSHI , TAJI SHINICHI , MORI MASASHI , SUZUKI KEIZO , ONO TETSUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To achieve high speed, high selecting ratio, high aspect processing and the stable etching characteristics for a long period in dry etching.
SOLUTION: In this plasma processing device, plasma is formed with the electromagnetic wave by an UHF-band power supply 104 by using electron cyclotron resonance phenomenon. Furthermore, the electromagnetic wave is emitted from a circular conductor plate 107 arranged at the position facing a sample to be processed 110. Furthermore, the material quality of the circular conductor plate 107 is made to be silicon or graphite. By forming the plasma using the UHF-band power supply 104, low-dissociation plasma can be formed even at the low gas pressure and high density, and the controllability of the reaction is improved. Furthermore, by the reaction with the plasma on the circular conductor plate 107, which also has the electromagnetic-wave emitting function, the effective active species can be increased.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在干蚀刻中实现长时间的高速，高选择率，高方位处理和稳定的蚀刻特性。解决方案：在该等离子体处理装置中，通过使用电子回旋共振现象，通过UHF频带电源104利用电磁波形成等离子体。此外，电磁波从布置在待处理样品110的位置的圆形导体板107发射。此外，圆形导体板107的材料质量被制成硅或石墨。通过使用UHF频带电源104形成等离子体，即使在低气体压力和高密度下也能够形成低离解等离子体，并且提高了反应的可控性。此外，通过与也具有电磁波发射功能的圆形导体板107上的等离子体的反应，可以增加有效的活性种类。版权所有（C）2006，JPO＆NCIPI

38. 发明专利

JP2008129896A Work flow subject approving method based on reply of mail via cellular phone 审中-公开
标题翻译：基于通过蜂窝电话的邮件回复的工作流程主体批准方法
公开(公告)号：JP2008129896A
公开(公告)日：2008-06-05
申请号：JP2006314983
申请日：2006-11-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ONO TETSUO
IPC分类号： G06Q10/00 , G06Q10/06 , G06Q50/00
摘要： PROBLEM TO BE SOLVED: To carry out approval/disapproval operation of work flow by using transmission and receipt functions of a cellular phone almost always carried at hand for reducing restriction on work operation due to place/time and to notify the fact of an approval request via mail to urge approval/disapproval action for preventing delay of an application. SOLUTION: A mail address for approval and a mail address for disapproval are created on a work flow management server every time when an application subject is presented, and after the addresses are created, the work flow management server sends an approval request mail to a cellular phone of an approver. The mail address for approval is set for a transmission source mail address of the approval request mail, and the mail address for disapproval is written in the body of the approval request mail. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用手机几乎总是携带的传输和接收功能来实现工作流程的批准/不批准操作，以减少由于地点/时间的工作操作的限制，并通知事实通过邮件批准请求，以敦促批准/不批准措施，以防止延迟申请。
解决方案：每当出现应用主体时，都会在工作流管理服务器上创建用于批准的邮件地址和不同意的邮件地址，并且在创建地址之后，工作流管理服务器发送批准请求邮件到批准人的手机。为批准请求邮件的传输源邮件地址设置用于批准的邮件地址，并且在批准请求邮件的正文中写入不允许的邮件地址。版权所有（C）2008，JPO＆INPIT

39. 发明专利

JP2001085393A SURFACE WORKING METHOD 失效
公开(公告)号：JP2001085393A
公开(公告)日：2001-03-30
申请号：JP25785599
申请日：1999-09-10
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KIKKAI MOTOHIKO , ARASE TAKAO , AKIYAMA HIROSHI , ONO TETSUO , TOKUNAGA TAKAFUMI , UMEZAWA TADASHI , KOJIMA MASAYUKI , NOJIRI KAZUO , KAWAKAMI HIROSHI
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To eliminate a partial etching residue of a metal film and a barrier film while a semiconductor film is left alone, by allowing a sample temperature to be a specified value when etching with plasma a metal film of a multi-layer film which comprises a metal film, a barrier film, and a semiconductor film. SOLUTION: A sample 106 which comprises a multi-layer film comprising a metal film, a barrier film, and a semiconductor film is sucked to a sample stage 108 while a plasma 105 is generated with an inert gas to raise the temperature of the sample. After confirming with a temperature sensor 107 that a sample temperature is 100-200 deg.C or above, a plasma 105 is generated to etch the metal film and the barrier film up to the upper layer part of the semiconductor film. With etching using the plasma 105 at a high temperature, the etching speed of the metal film is raised while that of the semiconductor film is not raised. Thus, the semiconductor film is left alone with no partial etching residue for the metal film or barrier film.

40. 发明专利

JP2000294539A SURFACE TREATMENT METHOD 失效
公开(公告)号：JP2000294539A
公开(公告)日：2000-10-20
申请号：JP9728399
申请日：1999-04-05
申请人： HITACHI LTD
发明人： ONO TETSUO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To set selection ratio of a semiconductor of Si, etc., and an insulation film of an oxide film, etc., at a specified value or more by introducing mixture gas of oxygen gas whose mixture ratio to halogen gas is specified into a vacuum container and turning on and off bias voltage repeatedly while plasma is generated. SOLUTION: Microwave is introduced from a microwave power supply 101 into a vacuum container 104 through a waveguide 102 and an introduction window 103. Material of the vacuum container 104 is metal, and insulation coating is applied to an inner surface. Material of the introduction window 103 is a material such as quartz and ceramic which transmit electromagnetic wave. Magnetic field strength of an electromagnet 105 is set to cause resonance with frequency of microwave; if frequency is 2.45 GHz, for example, magnetic field strength is 875 Gauss. Mixture gas of oxygen gas whose mixture ratio to halogen gas is 2.5 to 8.5% is introduced into the vacuum container 104 as treatment gas and a sample is treated by turning on and off bias voltage repeatedly while plasma of treatment gas is generated.

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