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1. 发明专利

JP2005311386A Wafer inspection device 有权
标题翻译：波形检测装置
公开(公告)号：JP2005311386A
公开(公告)日：2005-11-04
申请号：JP2005134893
申请日：2005-05-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： B23K15/00 , H01J37/20 , H01J37/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device, capable of performing the visual inspection of a semiconductor at a high speed with high resolution and uniformly preparing a sample for TEM observation and various analyses, with high position accuracy, from a region where foreign matters or defects exist.
SOLUTION: A scanning electron microscope section (SEM section) 1 for wafer inspection and an ion beam section 101 for preparing and processing a sample are provided side by side in the same inspection device, it is designed to consistenly perform visual inspection of the wafer 7 with the SEM section 1 and an extraction and processing of the specimen for the TEM observation and various analyses from the region, where defects (foreign matters or defective patterns) are present on the wafer 7 on the stage 8, based on the results of the inspection.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种检查装置，能够以高分辨率高速度地进行半导体的目视检查，并且从位置精确度均匀地制备用于TEM观察的样本和各种分析存在异物或缺陷。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于制备和处理样品的离子束部分101并排地设置在同一检查装置中，其被设计为一致地执行目视检查具有SEM部分1的晶片7以及用于TEM观察的样本的提取和处理以及在阶段8上的晶片7上存在缺陷（异物或缺陷图案）的区域的各种分析，基于检查结果。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2003077903A Apparatus and method for plasma processing 有权
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2003077903A
公开(公告)日：2003-03-14
申请号：JP2002155499
申请日：2002-05-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAJI TETSUNORI , WATANABE KATSUYA , MITANI KATSUHIKO , OTSUBO TORU , TAJI SHINICHI , TANAKA JUNICHI
IPC分类号： H05H1/46 , C23C16/511 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for plasma processing where precision processing of fine pattern for a sample of large diameter is easy and the selective ratio in fine processing is improved. SOLUTION: The apparatus for plasma processing is characterized in that an electrode comprises a first electrode connected to a high frequency power source, a second electrode that serves as a sample stage, and a wall part of a processing chamber that is located outside the periphery of the first electrode and is grounded, the high frequency power source is the power source for applying a high-frequency power of a VHF band of 30-300 MHz between a pair of electrodes and between the first electrode and the wall part of the processing chamber, and a magnetic field forming means for forming a static magnetic field region or a low frequency magnetic field region of not less than 10 gauss nor more than 110 gauss in a direction to cancel each other in the neighborhood of the center of the processing chamber and to superpose each other at the periphery and the outside of the processing chamber, and in that an electron cyclotron resonance region is formed at the periphery or the neighborhood of the outside of the sample mounting surface by the interaction of the magnetic field and the electric field due to the high frequency power source.
摘要翻译：要解决的问题：提供一种用于等离子体处理的设备和方法，其中对于大直径样品的精细图案的精密加工容易，并且精加工中的选择比提高。解决方案：用于等离子体处理的装置的特征在于，电极包括连接到高频电源的第一电极，用作样品台的第二电极和位于外部的处理室的壁部分第一电极并接地，高频电源是用于在一对电极之间以及处理室的第一电极和壁部之间施加30-300MHz的VHF频带的高频功率的电源以及磁场形成装置，用于在处理室的中心附近形成彼此抵消的方向的不小于10高斯或高于110高斯的静磁场区域或低频磁场区域，以及在处理室的周边和外部彼此叠置，并且在周边或附近形成电子回旋共振区域由于高频电源由于磁场和电场的相互作用而导致样品安装面的外部。

3. 发明专利

JP2009110978A Ion beam device 有权
标题翻译：离子束装置
公开(公告)号：JP2009110978A
公开(公告)日：2009-05-21
申请号：JP2009034721
申请日：2009-02-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： H01J37/317 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device capable of consistently manufacturing a sample for appearance inspection of a semiconductor wafer in high speed and high resolution and for TEM observation or various analyses from an existing part of foreign matters or defects, with high positioning accuracy.
SOLUTION: A scanning electron microscope part (an SEM part) for wafer inspection 1 and an ion beam part 101 for a sample manufacturing process are provided together in the same inspection device, appearance inspection of the wafer 7 by the SEM part 1, and an extracting processing operation of the sample for TEM observation from an existing part of a defect (a foreign matter or a pattern defect) on the wafer 7 and various analyses based on the inspection result, are made enabled to consistently carry out on the same stage 8.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种检测装置，其能够以高速和高分辨率一贯地制造用于半导体晶片的外观检查的样品，并且可以从现有部分的异物或缺陷进行TEM观察或各种分析，定位精度高。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于样品制造过程的离子束部分101一起设置在相同的检查装置中，通过SEM部分1对晶片7进行外观检查，并且从晶片7上的缺陷的现有部分（异物或图案缺陷）的现有部分进行TEM观察的提取处理操作以及基于检查结果的各种分析，能够一致地执行相同阶段8.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009027197A Ion beam apparatus 有权
标题翻译：离子束设备
公开(公告)号：JP2009027197A
公开(公告)日：2009-02-05
申请号：JP2008280701
申请日：2008-10-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UMEMURA KAORU , TAJI SHINICHI , KAKIBAYASHI HIROSHI , TOMIMATSU SATOSHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a novel method for manufacturing an electronic component not to consume a material wastefully for evaluation.
SOLUTION: The method for manufacturing the electronic component forms the electronic component by applying a plurality of working processes on a sample 2. The method for manufacturing the electronic component includes at least one manufacturing step of extracting at least a part of the sample, and monitoring, testing, and analyzing work progress in the working process for a part of a surface when the working process is finished. Thereby, the sample of a wafer or the like is evaluated without cutting wastefully the sample, thus improving a manufacturing yield of the electronic component.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造不消耗材料以用于评估的电子部件的新颖方法。解决方案：用于制造电子部件的方法通过在样品2上施加多个工作过程形成电子部件。制造电子部件的方法包括至少一个制造步骤，至少提取一部分样品，并在工作流程完成时监测，测试和分析一部分表面工作过程中的工作进度。由此，可以对样品等进行评价，而不会浪费样品，从而提高电子部件的制造成品率。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2005045290A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005045290A
公开(公告)日：2005-02-17
申请号：JP2004315424
申请日：2004-10-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MASASHI , TAJI SHINICHI , YOKOGAWA KATANOBU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To generate active species necessary for etching and to etch a silicon oxide film while maintaining a former selectivity, since it is anticipated that PFC (perfluorocarbon) and HFC (hydrofluorocarbon) as an etching gas of the silicon oxide film or a silicon nitride film will be limited to use or will become unavailable in the future due to environmental regulations. SOLUTION: In a region where a plasma treatment is performed by introducing a gas containing a fluorine used as a constituting element as a material gas for etching, a plasma of a gas containing the fluorine is caused to react on a carbon 112 under a solid state to generate molecular chemical species such as CF 4 , CF 2 , CF 3 , C 2 F 4 , or the like, and the etching is performed by these chemical species. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了产生腐蚀所必需的活性物质并且保持前一选择性而蚀刻氧化硅膜，因为预期作为氧化硅的蚀刻气体的PFC（全氟化碳）和HFC（氢氟烃）由于环境规定，膜或氮化硅膜在将来将被限制使用或将不可用。解决方案：在通过引入包含用作构成元素的氟的气体作为蚀刻材料进行等离子体处理的区域中，使含有氟的气体的等离子体在碳112下反应产生分子化学物质如CF 4，CF 2 ，CF 3 ，C 2 SB等等，并且通过这些化学物质进行蚀刻。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004241792A Plasma treatment apparatus 有权
公开(公告)号：JP2004241792A
公开(公告)日：2004-08-26
申请号：JP2004157197
申请日：2004-05-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NEGISHI NOBUYUKI , YOKOGAWA KATANOBU , YAMAMOTO SEIJI , IZAWA MASARU , TAJI SHINICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain etching characteristic of high uniformity and high accuracy even for a wafer of a large diameter of 12 inches or more, in a plasma surface treatment device which performs etching to a silicon oxide film of the surface of a sample, set in a vacuum vessel, by introducing electromagnetic wave of UHF band region into the vacuum vessel using an electromagnetic wave radiation antenna of a microstrip type to generate plasma.
SOLUTION: A circle-like member (focus ring) 17 is provided around a sample (wafer) 7 mounted on a lower electrode 6. Then high frequency bias electric power is applied to the focus ring 17 by high frequency bias electric power applying means 8' and 9' to uniformize radical concentration distribution on the surface of the wafer 7. Further, by adding a surface temperature control means 18 for the focus ring 17 to control a surface temperature of the focus ring 17, the consumption of fluorine radical in a peripheral region of the wafer is promoted, to reduce the etching rate of a nitride film at the periphery of the wafer.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2008034877A Manufacturing method and manufacturing system of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法和制造系统
公开(公告)号：JP2008034877A
公开(公告)日：2008-02-14
申请号：JP2007264377
申请日：2007-10-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IZAWA MASARU , MORI MASASHI , NEGISHI NOBUYUKI , TAJI SHINICHI
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing system of semiconductor device, which actualize cost reduction of semiconductor device manufacturing and improvement of operating rate of a manufacturing apparatus by automatic generation of a process treatment condition and automation of maintenance. SOLUTION: A computer 113 in a semiconductor manufacturing apparatus automatically generates a process condition on the basis of database and a process model by input of a wafer treatment history of a film thickness, a film quality, and the like. Further, the computer 113 in the semiconductor manufacturing apparatus obtains the wafer treatment history and a measurement result from a computer 107 on a manufacturing line, to automate the input of the treatment history. Furthermore, the computer 113 in the apparatus and a computer 112 of a manufacturing apparatus maker are connected to a network, to automate offering of process conditions and scheduling of the maintenance. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供半导体器件的制造方法和制造系统，其通过自动生成处理条件和维护自动化来实现半导体器件制造的成本降低和制造装置的工作速率的提高。解决方案：半导体制造装置中的计算机113通过输入薄膜厚度，薄膜质量等的晶片处理历史，基于数据库和处理模型自动生成处理条件。此外，半导体制造装置中的计算机113从制造线上的计算机107获得晶片处理历史和测量结果，以使输入治疗历史自动化。此外，装置中的计算机113和制造装置制造商的计算机112连接到网络，以自动提供处理条件和维护的调度。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2006279074A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006279074A
公开(公告)日：2006-10-12
申请号：JP2006185287
申请日：2006-07-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOTO NAOYUKI , MORI MASASHI , YOKOGAWA KATANOBU , ITABASHI NAOSHI , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To attain a processing of high anisotropy and low gate breakdown rate in dry etching.
SOLUTION: Plasma is generated by ECR resonance of electromagnetic waves and a magnetic field generated by supplying UHF electric power to a micro-strip line 4 installed on a surface on an atmosphere side of a dielectric 2 separating the vacuum inside and the outside, and a conductive film is dry-etched with the plasma. Thereby, since the plasma of uniform and low ion current density of 1 mA/cm
2 or less is realizable even in low pressure of 0.5 Pa or less in which anisotropy processing is possible, no gate breakdown and uniform etching becomes possible.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在干蚀刻中获得高各向异性和低门击穿速率的处理。解决方案：通过电磁波的ECR共振产生的等离子体和通过将UHF电力供应到安装在绝缘体2的外部的表面上的微带线4产生的磁场，电介质2的内部和外部的真空分离，并用等离子体干蚀刻导电膜。因此，即使在0.5Pa以下的低压下，即使可以进行各向异性处理，也能够实现1mA / cm 2以下的均匀且低离子电流密度等离子体的等离子体，不会产生栅极击穿和均匀蚀刻成为可能。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004080062A Dry etching system 有权
公开(公告)号：JP2004080062A
公开(公告)日：2004-03-11
申请号：JP2003401714
申请日：2003-12-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOTO NAOYUKI , MORI MASASHI , YOKOGAWA KATANOBU , ITABASHI NAOSHI , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To achieve high anisotrophy and machining with a low gate destruction rate in dry etching.
SOLUTION: The dry etching of a conductive film is performed by plasma generated through the ECR resonance of an electromagnetic wave and a magnetic field which are generated by supplying UHF power to a micro strip line 4 installed on the face on the atmospheric side of a dielectric 2 to separate the inside and outside of a vacuum.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2000077388A Method and system for dry etching 审中-公开
标题翻译：干蚀刻的方法和系统
公开(公告)号：JP2000077388A
公开(公告)日：2000-03-14
申请号：JP24353798
申请日：1998-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MASASHI , KOTO NAOYUKI , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce subtrenches at the time of fine patterning by applying a sine wave bias subjected to amplitude modulation by a saw-tooth wave to a sample setting electrode. SOLUTION: At the time of etching a sample 113 set on an electrode 112 applied with an AC bias voltage by touching the surface of the sample 113 to a plasm generated above the sample 113, the AC bias voltage is subjected to amplitude modulation by a saw-tooth wave by an amplitude modulation bias generating mechanism 116 comprising a sine wave oscillator 110 and a saw-tooth wave generator 109. For example, a sine wave (AC bias) of about 800 kHz is subjected to amplitude modulation by a triangular wave or a saw- tooth wave. Frequency of the sine wave is about 2 MHz or below, preferably 2-100 kHz, more preferably 2-400 kHz and one cycle of the waveform used for amplitude modulation is preferably set t about 10 ms or less.
摘要翻译：要解决的问题：通过将通过锯齿波进行振幅调制的正弦波偏压施加到样品设定电极，来减少精细图案化时的凹陷。解决方案：在通过将样品113的表面接触到样品113上产生的等离子体来蚀刻设置在施加有AC偏置电压的电极112上的样品113时，AC偏置电压通过锯由包括正弦波振荡器110和锯齿波发生器109的幅度调制偏置产生机构116的波形波。例如，约800kHz的正弦波（AC偏压）通过三角波或锯齿波。正弦波的频率为约2MHz或更低，优选为2-100kHz，更优选为2-400kHz，并且用于振幅调制的波形的一个周期优选设置为约10ms或更小。

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