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1. 发明专利

JP2014033225A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2014033225A
公开(公告)日：2014-02-20
申请号：JP2013218795
申请日：2013-10-22
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ADACHI JUNJI , MATSUMOTO TAKESHI , MIYAJI MASAKAZU , HIRATA AKIRA , YAGI KATSUJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To prevent a rise of plasma potential occurring due to insufficient DC ground, and to prevent occurrence of abnormal discharge in a plasma etching processing apparatus.SOLUTION: A plasma processing apparatus comprises: a vacuum container where plasma is generated inside; a base flange constituting a lower part of the vacuum container and grounded; a lower electrode arranged in the vacuum container and on which a sample to be worked is placed; a vertical drive mechanism vertically driving the lower electrode; a cylindrical first cover fixed to a ground potential part included in the lower electrode and for shielding the vertical drive mechanism from the plasma; and a cylindrical second cover fixed to the base flange and for shielding the vertical drive mechanism from the plasma. In the plasma processing apparatus performing surface processing on the sample to be worked with the plasma, the cylindrical second cover is made of conductor material.
摘要翻译：要解决的问题：为了防止由于DC地面不足而产生的等离子体电位升高，并且防止在等离子体蚀刻处理装置中发生异常放电。等离子体处理装置包括：内部产生等离子体的真空容器; 构成真空容器的下部的基座凸缘接地; 布置在真空容器中的放置待加工样品的下电极; 竖直驱动下部电极的垂直驱动机构; 固定到下电极中的地电势部分并用于屏蔽垂直驱动机构与等离子体的圆柱形第一盖; 以及固定到基座凸缘并用于将垂直驱动机构从等离子体屏蔽的圆柱形第二盖。在对等离子体加工样品进行表面处理的等离子体处理装置中，圆筒状的第二盖由导体材料构成。

2. 发明专利

JP2011187516A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2011187516A
公开(公告)日：2011-09-22
申请号：JP2010048559
申请日：2010-03-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MUTO SATORU , OYAMA MASATOSHI , MATSUMOTO TAKESHI , OTA YOSHIYUKI , ADACHI JUNJI , TANAKA JUNYA
IPC分类号： H01L21/3205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve such a problem that the etching of a stopper film does not proceed in etching a bottom of a hole after the etching of a Low-K film in a dual damascene-structure Via-process in a conventional technology.
SOLUTION: A method of making a via of a dual damascene process in the dual damascene process for plasma etching includes a first step of etching an anti-reflection film using a via-patterned upper layer resist film as a mask, a second step of etching a lower layer resist film using the upper layer resist film and the anti-reflection film as masks, a third step of etching the Low-K film using the lower layer resist film as the mask, a fourth step of performing plasma treatment before etching the stopper film, and a fifth step of etching the stopper film.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决在双镶嵌结构通过工艺中的Low-K膜的蚀刻之后，在蚀刻蚀刻底部的孔时，阻挡膜的蚀刻不会进行的问题常规技术。解决方案：在用于等离子体蚀刻的双镶嵌工艺中制备双镶嵌工艺的通孔的方法包括：使用通孔图案的上层抗蚀剂膜作为掩模蚀刻抗反射膜的第一步骤，第二步使用上层抗蚀剂膜和抗反射膜作为掩模蚀刻下层抗蚀剂膜的步骤;使用下层抗蚀剂膜作为掩模蚀刻Low-K膜的第三步骤;进行等离子体处理的第四步骤在蚀刻止动膜之前，以及蚀刻止动膜的第五步骤。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009152304A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2009152304A
公开(公告)日：2009-07-09
申请号：JP2007327596
申请日：2007-12-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , YOSHIDA TAKESHI , MATSUMOTO TAKESHI , MUTO SATORU , YOKOGAWA KATANOBU
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32091 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously achieve long life and ensuring of sufficient light to be received of a light introduction section, to enable long term stable operation and to improve the processing accuracy by accurate etching quantity detection. SOLUTION: In the plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light introduction section composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained at the light introduction section, wherein the end surface of the light introduction section through which light is entered is arranged at a distance of five times or more the mean free path of gas molecules in the vacuum vessel from the end surface of the shower plate facing the plasma. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且在被加工样品的表面上使用光学干涉检测蚀刻终点，以同时实现长寿命并且确保能够接收到光引入部分的足够的光，以使得能够进行长期稳定的操作并且通过精确的蚀刻量检测来提高处理精度。解决方案：在用于处理通过在淋浴板和下电极之间产生等离子体而被处理的样品的等离子体处理装置中，用于检测来自通过淋浴板处理的样品的表面的光的检测器包括光引入部分由入射光的光导和用于分析在光引入部获得的光的分光镜构成，其中进入光的光导入部的端面配置在平均值的5倍以上的距离从喷淋板的面向等离子体的端面的真空容器中的气体分子的自由路径。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2013012624A Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：JP2013012624A
公开(公告)日：2013-01-17
申请号：JP2011145164
申请日：2011-06-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： INOUE YOSHIHARU , MORIMOTO MICHIKAZU , MATSUMOTO TAKESHI , ONO TETSUO , KANEKIYO TOKIMITSU , YAKUSHIJI MAMORU , MIYAJI MASAKAZU
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method capable of suppressing foreign particles due to increase in the number of processed sheets of the object to be processed in plasma processing using depositional gas.SOLUTION: In a plasma processing method, etching on an object to be processed mounted on a sample stage provided in a processing chamber is conducted by generating plasma from depositional gas introduced into the processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied. In the plasma processing method, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to the plasma and a second period during which the object to be processed is exposed to the plasma and an etching rate for the object to be processed is lower than that in the first period.
摘要翻译：要解决的问题：提供一种等离子体处理方法，其能够使用沉积气体在等离子体处理中由于待处理物体的加工片材数量的增加而抑制异物。解决方案：在等离子体处理方法中，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于处理室中，对安装在处理室中的样品台上的被处理物进行蚀刻在施加射频功率的状态下的等离子体。在等离子体处理方法中，在蚀刻条件下蚀刻待处理对象，其中处理室的内壁上的沉积膜通过重复将待处理对象暴露于等离子体的第一周期而变为非晶体，第二周期待处理对象暴露于等离子体的期间，对被处理物的蚀刻速度低于第一期间的蚀刻速度。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2010118418A Method of cleaning plasma processing device 审中-公开
标题翻译：清洗等离子体处理装置的方法
公开(公告)号：JP2010118418A
公开(公告)日：2010-05-27
申请号：JP2008289365
申请日：2008-11-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MIYAJI MASAKAZU , OYAMA MASATOSHI , TAKEI HIDENORI , MATSUMOTO TAKESHI
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a plasma processing device by which the surface of a plasma processing chamber is efficiently cleaned to improve throughput, and further to provide a method of removing a resist mask formed on a low-dielectric-constant film (Low-k film) being a workpiece simultaneously with the cleaning. SOLUTION: As a method for improving the throughput, a plasma cleaning using CO 2 gas is carried out in a state wherein the low-dielectric-constant film (Low-k film) etched by using CxFx-based gas is mounted on a lower electrode as it is to remove deposits deposited on the surface of the plasma processing chamber. At this time, the resist mask patterned on the Low-k film can be removed simultaneously, so a processing time can be greatly shortened. Further, an electrode surface where a wafer is installed is not exposed to plasma during the cleaning, so that the electrode is prevented from deteriorating. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方法：提供一种清洁等离子体处理装置的方法，通过该等离子体处理装置有效地清洁等离子体处理室的表面以提高生产量，并且还提供一种除去形成在低温下的抗蚀剂掩模的方法，介质常数膜（Low-k膜）是与清洁同时的工件。解决方案：作为提高通过量的方法，使用CO气体进行等离子体清洗，其中通过使用通过蚀刻的低介电常数膜（Low-k膜）基于CxFx的气体安装在下电极上，以去除沉积在等离子体处理室的表面上的沉积物。此时，可以同时去除在Low-k膜上图案化的抗蚀剂掩模，因此可以大大缩短处理时间。此外，在清洁期间，安装晶片的电极表面不暴露于等离子体，从而防止电极劣化。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007324341A Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：JP2007324341A
公开(公告)日：2007-12-13
申请号：JP2006152305
申请日：2006-05-31
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： IKEGAMI EIJI , IKUHARA SHIYOUJI , SHIMADA TAKESHI , KUWABARA KENICHI , ARASE TAKAO , MATSUMOTO TAKESHI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To determine the end of preconditioning discharge after wet cleaning accurately by a versatile method. SOLUTION: A plasma processing method includes a plasma processing container 101 equipped with an antenna electrode 102 and a bottom electrode 109 to place and hold a workpiece inside the processing container 101; a gas supply device for supplying a processing gas into the processing chamber 101; and an exhaust pump 116 for exhausting the gas inside the processing chamber via an exhaust valve 115. High-frequency power is supplied to the antenna electrode 102 via a matching circuit 105, and plasma is produced inside the processing container 101 wherein a magnetic field is formed by a magnetic field coil 107, and then a plasma processing is conducted on the workpiece 108 placed on the bottom electrode 109. This processing is repeated on a plurality of workpieces successively. In this case, the internal pressure of the processing container 101 is detected during the plasma processing. When the detected pressure decreases with an increase in plasma processing time and reaches a stable value, it is determined that preconditioning discharge is finished. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过多功能方法准确地确定湿式清洗后预处理放电的结束。解决方案：等离子体处理方法包括：具有天线电极102和底部电极109的等离子体处理容器101，用于将工件放置在工作容器101内; 用于将处理气体供给到处理室101中的气体供给装置; 以及用于经由排气阀115排出处理室内的气体的排气泵116.经由匹配电路105将高频电力提供给天线电极102，并且在处理容器101内产生等离子体，其中磁场为由磁场线圈107形成，然后对放置在底部电极109上的工件108进行等离子体处理。这种处理在多个工件上连续重复。在这种情况下，在等离子体处理期间检测处理容器101的内部压力。当检测到的压力随着等离子体处理时间的增加而降低并达到稳定值时，确定预处理放电结束。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2009088389A Plasma treatment method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2009088389A
公开(公告)日：2009-04-23
申请号：JP2007258791
申请日：2007-10-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAKEI HIDENORI , KOROYASU KUNIHIKO , MATSUMOTO TAKESHI , IKEGAMI EIJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform plasma treatment with low ion energy and plasma treatment with high ion energy in the same treatment chamber in an inexpensive and well reproductive manner.
SOLUTION: This plasma treatment method comprises using the treatment chamber 6, a gas supply means 7 for supplying treatment gas to the treatment chamber, an antenna electrode 4 for supplying the output of a first high frequency power supply to the treatment chamber to generate plasma, an exhaust means 17 for exhausting the treatment chamber, a placement electrode 10 for holding a treated substrate placed in the treatment chamber, and second and third high frequency power supplies 11, 31 for supplying high frequency power to members except the placement electrode, out of the placement electrode and the members constituting the face of the treatment chamber in opposition to the plasma, respectively. The outputs of the second and third high frequency power supplies are controlled independently or in linkage to continuously control the energy of ions to be injected into the treated substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：以低成本和良好的生殖方式在相同的处理室中以低离子能量和高离子能等离子体处理进行等离子体处理。解决方案：这种等离子体处理方法包括使用处理室6，用于向处理室供应处理气体的气体供应装置7，用于将第一高频电源的输出提供给处理室的天线电极4 产生等离子体，用于排出处理室的排气装置17，用于保持放置在处理室中的处理过的基板的放置电极10以及用于向除了放置电极之外的构件提供高频电力的第二和第三高频电源11,31 ，分别与放置电极和构成处理室的表面的构件分别相对于等离子体。第二和第三高频电源的输出被独立地或连接地控制以连续地控制待注入到被处理的衬底中的离子的能量。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2011124295A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2011124295A
公开(公告)日：2011-06-23
申请号：JP2009279037
申请日：2009-12-09
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ADACHI JUNJI , MATSUMOTO TAKESHI , MIYAJI MASAKAZU , HIRATA AKIRA , YAGI KATSUJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a rise of plasma potential occurring owing to an insufficient DC ground, and also to prevent occurrence of abnormal discharge in a plasma etching processing apparatus.
SOLUTION: The plasma processing apparatus has: a vacuum container 1 where plasma is generated inside; a base flange which constitutes a lower part of the vacuum container 1 and is grounded; a lower electrode 2 which is arranged in the vacuum container 1 and on which a sample 3 to be worked is placed; a vertical drive mechanism which vertically drives the lower electrode 2; a cylindrical first cover 27 which is fixed to a ground potential part which the lower electrode 2 has and shields the vertical drive mechanism from plasma; and a cylindrical second cover 28 which is fixed to the base flange and shields the vertical drive mechanism from plasma. The apparatus performs a surface processing on the sample with plasma, and the cylindrical second cover 28 is made of a conductor material.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止由于DC地面不足而产生的等离子体电位的上升，并且还防止等离子体蚀刻处理装置中的异常放电的发生。解决方案：等离子体处理装置具有：内部产生等离子体的真空容器1; 构成真空容器1的下部并接地的基座凸缘; 布置在真空容器1中并放置待加工样品3的下电极2; 垂直驱动下部电极2的垂直驱动机构; 固定到下电极2的接地电位部分并且将垂直驱动机构从等离子体屏蔽的圆柱形第一盖27; 以及圆柱形的第二盖28，其固定到基部凸缘并且将垂直驱动机构从等离子体屏蔽。该装置对等离子体的样品进行表面处理，圆筒形的第二盖28由导体材料制成。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010267670A Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2010267670A
公开(公告)日：2010-11-25
申请号：JP2009115715
申请日：2009-05-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ISHIMARU MASATO , TAKEI HIDENORI , MATSUMOTO TAKESHI , MIYAJI MASAKAZU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform uniform and consistent processing on each of films of a laminated film composed of an organic film and an inorganic film.
SOLUTION: A plasma processing method uses a vacuum container 1 including a gas supply pipe for supplying a processing gas, a substrate electrode 3 arranged in the vacuum container, an antenna electrode 7 arranged in the vacuum container opposite the substrate electrode, and an inter-electrode distance adjusting means of varying the distance between the substrate electrode and antenna electrode in a processing atmosphere. The method includes: generating plasma by supplying high-frequency energy to the processing gas supplied by supplying high-frequency energy to the antenna electrode; supplying a high-frequency voltage for attracting ions to the substrate electrode; and accelerating ions in the generated plasma to perform plasma processing on a sample mounted on the substrate electrode. The sample has an insulating film structure having a structure having the organic film and inorganic film laminated, and the inter-electrode distance during etching the organic film is set to be larger than that during etching the inorganic film.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：对由有机膜和无机膜构成的层叠膜的每个膜进行均匀且一致的处理。解决方案：等离子体处理方法使用包括供给处理气体的气体供给管的真空容器1，配置在真空容器内的基板电极3，配置在与基板电极相对的真空容器内的天线电极7，以及在处理气氛中改变基板电极和天线电极之间的距离的电极间距离调节装置。该方法包括：通过向天线电极提供高频能量而供应的处理气体提供高频能量来产生等离子体; 向衬底电极提供用于吸引离子的高频电压; 并加速所产生的等离子体中的离子，对安装在基板电极上的样品进行等离子体处理。样品具有具有有机膜和无机膜的结构的绝缘膜结构，并且蚀刻有机膜期间的电极间距离设定为大于蚀刻无机膜时的电极间距离。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2014220360A プラズマ処理方法审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2014220360A
公开(公告)日：2014-11-20
申请号：JP2013098305
申请日：2013-05-08
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： MATSUMOTO TAKESHI , EITOKU HIROFUMI
IPC分类号： H01L21/3065
CPC分类号： H01L21/30
摘要：【課題】シリコン基板上に堆積したカーボン系ポリマーを酸素プラズマで除去する際に、同時にシリコン基板表面に生成される可能性のあるシリコン酸化層を低基板ダメージで除去し、所望の加工形状を得ることのできるプラズマ処理方法を提供する。【解決手段】溝を有するシリコン基板の溝に埋めこまれたシリコン酸化膜302をエッチングするプラズマ処理方法において、シリコン酸化膜302をプラズマエッチングする際に堆積した堆積膜を三フッ化窒素ガスと酸素ガスの混合ガスを用いたプラズマにより除去する。【選択図】図3E
摘要翻译：要解决的问题：提供一种等离子体处理方法，其中当用氧等离子体去除沉积在硅衬底上的碳基聚合物时，可以同时形成在硅衬底的表面上的氧化硅层可以是去除对基板的低损伤并且可以获得期望的加工形状。解决方案：在等离子体处理方法中，蚀刻嵌入具有凹槽的硅基板的凹槽中的氧化硅膜302，当氧化硅使用包括三氟化氮气体和氧气的混合气体，用等离子体除去膜302等离子体蚀刻。

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