专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JPH05343342A 失效
公开(公告)号：JPH05343342A
公开(公告)日：1993-12-24
申请号：JP17742792
申请日：1992-06-11
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： MIYAGI KATSUNOBU , WATANABE SHINGO , MIKATA YUICHI , OKUMURA KATSUYA
IPC分类号： H01L21/205 , C23C16/458 , C23C16/46 , C30B25/10 , C30B31/12 , H01L21/00 , H01L21/22 , H01L21/324
摘要： PURPOSE:To sufficiently obtain a necessary adiabatic effect at the time of thermal treatment, to perform a stable thermal treatment without impairing a sealing function and to prevent the generation of particles to improve the yield of the thermal treatment. CONSTITUTION:In a thermal treatment equipment furnished with a thermal treatment boat 40 inserted into a reaction container 30 opened at one end in the state of holding a plurality of wafers W to seal the reaction container 30 and to subject the plurality of wafers W to thermal treatment and provided at the end of the thermal treatment boat 40 with a thermal insulator 42 for thermally insulating the inside of the reaction container 30 at the time of thermal treatment, the thermal insulator 42 is furnished with a composite substrate 42B having a metal film layer for reflecting a heat ray into the reaction container 30 at the time of thermal treatment and with a cylinder body 42C for surrounding the periphery of the composite substrate 42B.

12. 发明专利

JP2005116553A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005116553A
公开(公告)日：2005-04-28
申请号：JP2003344753
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , SAITO KIMIHIDE , MIKATA YUICHI
IPC分类号： B05D1/26 , B05C5/00 , B05C13/00 , B05D7/00 , H01L21/31 , H01L21/312 , H01L21/768
CPC分类号： H01L21/6715 , G03F7/162 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To surely apply a coating liquid onto all the surface of a wafer so as to form a coating film when the coating liquid is applied on the surface of the wafer in a manner wherein a picture is drawn with a single stroke of the brush, while a coating liquid nozzle is made to scan the surface of the wafer in a lateral direction and while the wafer is intermittently moved in a longitudinal direction.
SOLUTION: The wafer is so oriented as to enable the scanning direction of the coating liquid nozzle 5 to intersect with any of dicing lines D cut in the surface of the wafer W to split the wafer W into discrete chips, then a liquid coating operation is carried out, and the wafer W is reoriented so as to recover its original orientation and then unloaded. The set angles of the wafers W of each type are previously written in their recipes in accordance with categoris the wafter W, and the orientation of the wafer W is set up by selection of the recipe.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了确保将涂布液施加到晶片的所有表面上，以便当涂覆液体以如下方式施加在晶片的表面上时形成涂膜，其中以同时使涂布液喷嘴在横向方向上扫描晶片的表面，同时晶片在纵向上间歇地移动。解决方案：晶片被定向成使得涂布液喷嘴5的扫描方向能够与在晶片W的表面上切割的任何切割线D交叉，以将晶片W分离成离散的芯片，然后将液体进行涂布操作，并且将晶片W重新定向以恢复其原始取向然后卸载。每种类型的晶片W的设定角度根据分类W预先写入其配方中，并且通过选择配方来建立晶片W的取向。版权所有（C）2005，JPO＆NCIPI

13. 发明专利

JPH05251357A 失效
公开(公告)号：JPH05251357A
公开(公告)日：1993-09-28
申请号：JP3878692
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TOKYO ELECTRON TOHOKU KK
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： H01L21/205 , H01L21/225
摘要： PURPOSE:To enhance the uniformity inside a face of the film thickness of a thin film and to obtain a good step coverage shape. CONSTITUTION:A wafer boat on which many wafers have been mounted is loaded inside a reaction tube; the inside of the reaction tube is heater to, e.g. 620 deg.C; the inside of the reaction tube is evacuated to produce a vacuum; after that, 100% monosilane gas is introduced; a polysilicon layer 91 is formed on each wafer in a low-pressure state. After that, the inside of the reaction tube is evacuated; phosphine gas is introduced; a phosphorus-adsorbed layer 92 is formed on the polysilicon layer 91 in a low-pressure state; in addition, the inside of the reaction tube is evacuated; a polysilicon layer 91 is formed on the phosphorus-adsorbed layer 92 by using 100%; monosilane gas. Said operation is repeated ; a laminated body 9 having a sandwich structure is obtained; after that, an annealing treatment is executed; the phosphorus-doped layers 92 are diffused into the polysilicon layers 91.

14. 发明专利

JPH05251347A 失效
公开(公告)号：JPH05251347A
公开(公告)日：1993-09-28
申请号：JP3878792
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TOKYO ELECTRON TOHOKU KK
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： H01L21/205
摘要： PURPOSE:To shorten the delay time of a film formation operation by a method wherein the mixture amount of a carrier gas is made small at the initial stage of the film formation process of a layer composed mainly of silicon on the surface in which components other than silicon are contained. CONSTITUTION:Polysilicon layers 91 and phosphorus-adsorbed layers 92 are formed on a wafer W in this order; after that, the temperature at the inside of a reaction tube 2 is set to e.g. 600 deg.C or higher; a treatment gas used to form a silicon layer is introduced into the reaction tube 2; the inside of the reaction tube 2 is maintained at a pressure of, e.g. 0.4Torr. As the treatment gas, a mixed gas of, e.g. monosilane gas and a small amount of a carrier gas is used at least at the initial stage of a film formation process or 100% of monosilane gas is used. When phosphorus exists at a substratum, the delay time T of the film formation process is shortened by using said treatment gas.

15. 发明专利

JPH05166741A SUBSTRATE SUPPORTING TOOL FOR HEAT TREATING APPARATUS 失效
公开(公告)号：JPH05166741A
公开(公告)日：1993-07-02
申请号：JP33107691
申请日：1991-12-16
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD , TOSHIBA CORP
发明人： NIINO REIJI , SHIRATANI ISAO , SHIMADA YUTAKA , FUKUSHIMA HIROKI , KITAYAMA HIROBUMI , YONEKURA AKEMICHI , MIKATA YUICHI
IPC分类号： H01L21/324 , C23C16/458 , C30B25/12 , H01L21/22 , H01L21/673
摘要： PURPOSE:To provide a board supporting tool for a heat treating apparatus in which uniformity of treating a substrate to be treated can be improved as compared with prior art, its manufacture is facilitated and the substrate to be treated can be automatically conveyed. CONSTITUTION:Four posts 4 are provided between an upper supporting plate 2 and a lower supporting plate 3 of a substrate supporting tool 1 for a heat treating apparatus. Wafer supporting grooves 6 each for supporting a semiconductor wafer 5 and annular plate supporting grooves 8 each for supporting an annular plate 7 made of quartz, etc., formed in a larger diameter than that of the wafer 5 are alternately provided at the posts 4.

16. 发明专利

JPH04155827A CLEANING METHOD 失效
公开(公告)号：JPH04155827A
公开(公告)日：1992-05-28
申请号：JP28079290
申请日：1990-10-19
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NIINO REIJI , IMAMURA YASUO , MIKATA YUICHI , MIYAZAKI SHINJI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： H01L21/31 , H01L21/304
摘要： PURPOSE:To clean up the Si3N4 film stuck to the inside of a process vessel efficiently and safely within a short time by a method wherein the cleaning gas containing dilluted ClF3 is fed to the process vessel in the state kept at the temperature exceeding 450 deg.C but slightly lower than the temperature to form the Si3N4 film. CONSTITUTION:After finishing the formation of a film, the process gas inside a reaction vessel 2 is exhausted by hydrogen purging or nitrogen purging etc., to bring about the state at atmospheric pressure and then a wafer boat 9 is unloaded from the reaction vessel 2. At this time, the temperature inside the reaction vessel 2 is kept at the film formation process temperature. Next, the reaction vessel 2 is sealed up by a cap part 6 and then a cleaning gas is fed from a gas leading-in pipe 10 to the reaction vessel 2 at the temperature of about 550 deg.C-650 deg.C slightly lower than the process temperature. Before starting the cleaning process, respective feeding flow rates of ClF3 gas and N2 gas contained in the cleaning gas are previously adjusted by mass flow controllers 17, 18. Furthermore, it is recommended that the pressure inside the reaction vessel 2 is to be set up within the range not exceeding 5.0Torr.

17. 发明专利

JPH04218916A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH04218916A
公开(公告)日：1992-08-10
申请号：JP40394390
申请日：1990-12-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MIYAZAKI SHINJI , MIKATA YUICHI , MORIYA TAKAHIKO , NIINO REIJI , NISHIMURA SUKEHIKO
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C30B25/14 , H01L21/205 , H01L21/22
摘要： PURPOSE:To form each of film thickness and composition of a CVD film almost uniformly among substrates when forming the CVD film of a large amount of treatment substrates by batch treatment. CONSTITUTION:In a heat treatment device provided with a gas nozzle 30' which extends along a side of a treatment substrate mounted region inside a reaction container 10 and is provided with gas blow-off openings in places lengthwise, direction theta of the gas blow-off opening of the gas nozzle based on a standard of center line direction which connects a gas nozzle center and a center direction in a treatment substrate surface is set within a range not less than an angle formed to the center line direction.

18. 发明专利

JP2009033189A Method of manufacturing semiconductor 有权
标题翻译：制造半导体的方法
公开(公告)号：JP2009033189A
公开(公告)日：2009-02-12
申请号：JP2008237034
申请日：2008-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： OKADA TAKAKO , KANBAYASHI SHIGERU , YABUKI SO , ONGA SHINJI , TSUNASHIMA YOSHITAKA , MIKATA YUICHI , OKANO HARUO
IPC分类号： H01L21/20 , H01L21/329 , H01L21/331 , H01L21/336 , H01L21/822 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L29/73 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a single crystal and a polycrystal under low temperature, and to provide a highly reliable semiconductor device using solid phase growing method. SOLUTION: In the method of depositing an amorphous semiconductor thin film on a substrate or an insulation film, the average atomic distance distribution of the amorphous film comprising the main component of the film is almost the same as that of the single crystal. A recrystallization energy is applied to the amorphous film to form a single crystal semiconductor film 3 with solid phase growth. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在低温下提供单晶和多晶体，并提供使用固相生长方法的高度可靠的半导体器件。解决方案：在基板或绝缘膜上沉积非晶半导体薄膜的方法中，包含膜的主要成分的非晶膜的平均原子距离分布几乎与单晶相同。对非晶膜施加再结晶能，形成具有固相生长的单晶半导体膜3。版权所有（C）2009，JPO＆INPIT

19. 发明专利

JP2005274181A Degree-of-consumption measuring method and humidity measuring method of chemical gas filter in environmental box 审中-公开
标题翻译：化学气体过滤器在环境箱中的消耗度测量方法和湿度测量方法
公开(公告)号：JP2005274181A
公开(公告)日：2005-10-06
申请号：JP2004084084
申请日：2004-03-23
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： OHASHI TOMONORI , MIKATA YUICHI
IPC分类号： G01N27/04 , B01D53/04 , B01D53/26 , H01L21/673 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a method capable of grasping accurately and easily an exchange period of a chemical gas removing filter in an environmental box, and a method capable of measuring the humidity in the environmental box by the chemical gas removing filter. SOLUTION: This environmental box is equipped with an opening part for storing a substrate, a container body equipped with a lid body for covering the opening part sealably, a fan motor for forming a circulation passage of an air flow in contact with the substrate in the container body, and a particle removing filter and the chemical gas removing filter arranged in the passage of the air flow flowing toward the substrate. In this measuring method of the degree of consumption of the chemical gas removing filter, an unconsumed part is provided in the chemical gas removing filter in the environmental box, and electric resistances of a consumed part and the unconsumed part are measured, and the degree of consumption is determined from a relative value between resistivity values of both electric resistances. The humidity in the environmental box can be measured by canceling the relative value portion from the resistivity values and by converting the values into the humidity. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够准确且容易地掌握环境箱中的化学气体去除过滤器的交换周期的方法，以及能够通过化学气体去除过滤器测量环境箱中的湿度的方法。解决方案：该环保箱具有用于存储基板的开口部，具有用于将开口部密封地覆盖的盖体的容器主体，形成与流体接触的空气流的循环通路的风扇马达容器主体中的基板，以及布置在朝向基板流动的空气流的通道中的颗粒除去过滤器和化学气体去除过滤器。在该化学气体去除过滤器的消耗程度的测量方法中，在环境箱中的化学气体去除过滤器中设置未消耗部分，测量消耗部分和未消耗部分的电阻，消耗由两个电阻的电阻率值之间的相对值确定。可以通过从电阻率值中取消相对值部分并将其转换成湿度来测量环境箱中的湿度。版权所有（C）2006，JPO＆NCIPI

20. 发明专利

JPH11111621A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPH11111621A
公开(公告)日：1999-04-23
申请号：JP27113397
申请日：1997-10-03
申请人： TOSHIBA CORP
发明人： KAI TETSUYA , MIKATA YUICHI , KASAI YOSHIO , WAKAMIYA MIKIO
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vertical CVD apparatus which can simultaneously form CVD films on the surfaces of a plurality of high quality semiconductor substrates without variations. SOLUTION: When, for example, CVD films are formed simultaneously on a plurality of semiconductor substrates, a board frame supporting the semiconductor substrates is inserted into a quartz reaction tube. Then a film-forming gas supplied to a quartz gas nozzle 14 is blown upon each semiconductor substrate from a quartz filter 21, in a state such that the reaction tube is sealed with a cap. Since the film forming gas is blown upon the semiconductor substrates via the quartz filter 21, the variations of the flow rate of the film- forming gas in the height direction H of the nozzle 14 can be eliminated, and the discharge of particles from the nozzle 14 can be inhibited.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式