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1. 发明专利

JPH05166741A SUBSTRATE SUPPORTING TOOL FOR HEAT TREATING APPARATUS 失效
公开(公告)号：JPH05166741A
公开(公告)日：1993-07-02
申请号：JP33107691
申请日：1991-12-16
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD , TOSHIBA CORP
发明人： NIINO REIJI , SHIRATANI ISAO , SHIMADA YUTAKA , FUKUSHIMA HIROKI , KITAYAMA HIROBUMI , YONEKURA AKEMICHI , MIKATA YUICHI
IPC分类号： H01L21/324 , C23C16/458 , C30B25/12 , H01L21/22 , H01L21/673
摘要： PURPOSE:To provide a board supporting tool for a heat treating apparatus in which uniformity of treating a substrate to be treated can be improved as compared with prior art, its manufacture is facilitated and the substrate to be treated can be automatically conveyed. CONSTITUTION:Four posts 4 are provided between an upper supporting plate 2 and a lower supporting plate 3 of a substrate supporting tool 1 for a heat treating apparatus. Wafer supporting grooves 6 each for supporting a semiconductor wafer 5 and annular plate supporting grooves 8 each for supporting an annular plate 7 made of quartz, etc., formed in a larger diameter than that of the wafer 5 are alternately provided at the posts 4.

2. 发明专利

JPH029408A DUST TRAP 失效
公开(公告)号：JPH029408A
公开(公告)日：1990-01-12
申请号：JP16202388
申请日：1988-06-29
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD
发明人： IMAI MASAYUKI , KITAYAMA HIROBUMI
IPC分类号： H01L21/205 , B01D46/00 , H01L21/31
摘要： PURPOSE:To improve a maintenance efficiency of a trap and to prevent small grain size dust from entering a vacuum suction mechanism by providing a dust trap equipped with fibrous filter medium interposed between an evacuated reaction vessel and a vacuum suction mechanism. CONSTITUTION:A dust trap 9 is provided between a reaction vessel 1 and a vacuum equipment 10. A cylindrical filter mesh 13 of 300mum in opening size connected with a piping 12 is inserted in a casing 11 of a dust trap 9 at an upstream side of an exhaust gas flow, and a fibrous filter medium such as silica glass wool 14 is filled between the filter mesh 13 and the casing 11. The exhaust gas from the reaction vessel 1 has its dust of about 300mum or larger in grain size first removed by the filter mesh 13, then that of about 70-300mum removed by the silica glass wool 14 and flows into the vacuum equipment 10 located downstream. A load of the vacuum equipment is reduced, because even small dust is removed by the glass wool 14, and a maintenance property can also be improved by forming the silica glass wool into a cartridge type.

3. 发明专利

JPH0382016A VERTICAL TYPE VAPOR GROWTH DEVICE 失效
公开(公告)号：JPH0382016A
公开(公告)日：1991-04-08
申请号：JP21806989
申请日：1989-08-24
申请人： TEL SAGAMI LTD , TOSHIBA CORP
发明人： KITAYAMA HIROBUMI , MIYAZAKI SHINJI
IPC分类号： H01L21/205 , H01L21/22 , H01L21/31
摘要： PURPOSE:To prevent the deposit of a reaction product on the lower end section of a boat and the upper end section of a carrying jig, to remove the boat easily and to obviate the re-deposit, etc., of the reaction product onto a wafer by setting the position of the connection and supporting of a treated-substrate housing jig and the carrying jig in the unreacted temperature region of furnace temperature distribution. CONSTITUTION:In a vertical type film forming device, furnace temperature distribution of which is composed of a film forming temperature region and an unreacted temperature region to a material process gas and which has a structure that a substrate to be treated 20 is inserted to a desired location in a furnace by a jig 40, in which the substrate to be treated 20 is housed, and a jig 60 for placing the jig 40 and vertically carrying the jig 40, the jig 40, in which the substrate to be treated 20 is housed, and the position A of the connection and supporting of the jig 60 for carrying are set in the unreacted temperature region of furnace temperature distribution. The lower end side of the boat 40, in which the substrate to be treated 20 is housed, is made longer than conventional devices and the overall length of the carrying jig combining heat insulating cylinder 60 is made shorter than the conventional devices, and the lower-end support position A of the boat 40 is set to a section lower than a conventional location. The extension section 44 of the boat 40 is given a heat-insulating effect.

4. 发明专利

JPH0355840A PROCESSING METHOD IN VERTICAL TYPE PROCESSING EQUIPMENT 失效
公开(公告)号：JPH0355840A
公开(公告)日：1991-03-11
申请号：JP19217289
申请日：1989-07-25
申请人： TEL SAGAMI LTD
发明人： FUSE NOBORU , KITAYAMA HIROBUMI
IPC分类号： H01L21/302 , C23C16/02 , C23F4/00 , H01L21/20 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To eliminate spontaneous oxide film before regular processes like film formation by placing an object in a vertical type processing vessel or a chamber connected with the above vessel via a load lock chamber, and supplying cleaning gas with the object heated. CONSTITUTION:Before regular processes in a vertical type processing vessel 10, objects 20 to be processed are loaded in the vertical type processing vessel 10 or another vessel linked with the vessel 10 via a load lock chamber. Cleaning gas is supplied with the objects 20 heated, so that the spontaneous oxide film formed on the body 20 is eliminated by chemical reaction with the gas. For example, a process tube 10 is loaded with a boat, and evacuated to purge N2. The inside of the process tube 10 is kept at a specified cleaning temperature by heating with a heater 14, and NF3 or HCl as etching gas is introduced, thereby removing the spontaneous oxide film of the wafer.

5. 发明专利

JPH02139948A TRANSFER OF SUBSTRATE 失效
公开(公告)号：JPH02139948A
公开(公告)日：1990-05-29
申请号：JP29332788
申请日：1988-11-18
申请人： TEL SAGAMI LTD
发明人： KATO MITSUO , TANAKA DAISUKE , KITAYAMA HIROBUMI
IPC分类号： H01L21/677 , H01L21/68
摘要： PURPOSE:To miniaturize the device and reduce adhesion of any dust onto a substrate being transferred by substantially vertically supporting a substrate holder tool, and taking out the substrate from the lower side of the tool while disposing the substrate from the upper side of the tool. CONSTITUTION:Semiconductor wafers 5 on a wafer supporting arm 10a of a transfer device 10 are moved in directions of r, theta, and z and transferred every five sheets thereof. When the non-processed semiconductor wafers 5 housed in wafer cassettes 8a-8e are transferred into a wafer boat 6, lowest five semiconductor wafers 5 in the uppermost wafer cassette 8a are first taken out, and disposed on the empty uppermost portion in the wafer boat 6. Further, upper five semiconductor wafers 5b among the semiconductor wafer 5a are taken out and disposed on the wafer boat 6 below the semiconductor wafer 5a in the same. In such a way, the semiconductor wafers are successively disposed on the wafer boat 6 from above, and likewise the semiconductor wafers 5 housed in the wafer cassettes 8b-8e for example are transferred onto the wafer boat 6. With completion of the transfer, a heat treatment furnace 3 is loaded with the wafer boat 6.

6. 发明专利

JPH0294627A HEAT TREATMENT 失效
公开(公告)号：JPH0294627A
公开(公告)日：1990-04-05
申请号：JP24685588
申请日：1988-09-30
申请人： TEL SAGAMI LTD
发明人： TANAKA DAISUKE , KITAYAMA HIROBUMI
IPC分类号： H01L21/22 , H01L21/205
摘要： PURPOSE:To reduce an installation area, to reduce a cost of an apparatus and to enhance a productivity by a method wherein individual objects to be treated are housed in two reaction-furnace bodies and, during a heat-treatment process in one reaction-furnace body on one side, a treatment preparation process is executed in the other reaction-furnace body. CONSTITUTION:A reaction-furnace body has a structure where a first reaction- furnace body 2a housing a cylindrical reaction tube 1a and a second reaction- furnace body 2b housing a similar reaction tube 1b are installed side by side. A treatment operation in the second reaction-furnace body 2b is set in such a way that a pretreatment process of the second reaction-furnace body 2b is finished when a film-formation treatment process of the first reaction furnace body 2a is finished. Simultaneously with a start of a film-formation process in the second reaction-furnace body 2b, a posterior treatment process is started in the first reaction-furnace body 2a; after the film-formation treatment process in the second reaction-furnace body 2b has been finished, a film-formation treatment is started immediately in the first reaction-furnace body 2a. Thereby, an installation area can be reduced, a cost of an apparatus can be reduced and a productivity can be enhanced.

7. 发明专利

JPH01220434A HEAT TREATING FURNACE 失效
公开(公告)号：JPH01220434A
公开(公告)日：1989-09-04
申请号：JP4648588
申请日：1988-02-29
申请人： TEL SAGAMI LTD
发明人： KITAYAMA HIROBUMI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31
摘要： PURPOSE:To supply uniform gas to all the elements to be treated by providing gas injection ports corresponding to different gas supply regions to respective injectors, and controlling gas supply amounts according to respective injectors. CONSTITUTION:A boat 7 on which 100 wafers 6 are disposed separately in a longitudinal direction is placed on a thermal insulating cylinder 8, and disposed at a furnace center in a process tube 1 by raising the cylinder 8. Mass flow controllers 20a-20e are controlled in response to the supplying ratios of processing gases, and the gases are supplied at a predetermined ratio to a gas supply tube 22. The tube 22 is connected to an injection flowrate controller 30, which individually controls gas supply amounts to 4 gas supply injectors 10a-10d. The injectors 10a-10d respectively supply gases to the wafers of first - fourth regions. The gases injected from the injection ports 11 of the respective injectors are uniformly passed over the upper surfaces of the respective wafers 6 to form films thereon.

8. 发明专利

JPH01125822A VERTICAL FURNACE 失效
公开(公告)号：JPH01125822A
公开(公告)日：1989-05-18
申请号：JP4648488
申请日：1988-02-29
申请人： TEL SAGAMI LTD
发明人： KITAYAMA HIROBUMI , IWABUCHI KATSUHIKO
IPC分类号： H01L21/31 , H01L21/205
摘要： PURPOSE:To reduce the maintenance operations for removing any reaction product by a method wherein at least the peripheral seal parts of an opening flange of a reaction tube and a cap member are formed into an upward slope. CONSTITUTION:A taper flange part 24 with a taper surface 24a in a specified upward slope is provided on the lower end of a manifols 12 to turn up at least the seal part of a peripheral flange part e.g. overall flange part. On the other hand, a cap member 26 closing the lower end opening of a manifold 12 is provided on the lower end of a heat retaining cylinder 22 while the central part of the cap member 26 is formed into a flat plate part 26a with the peripheral part thereof in an upward slope to be a taper surface 26b e.g. making the same angle as that of the taper surface 24a of said taper flange part 24. Consequently, an O ring 18 (14, sealing means) is brought into contact with the taper surface 26b to prevent any reaction product from being deposited on the contact surface. Through these procedures, the frequency of maintenance operations to assure airtightness can be diminished.

9. 发明专利

JPH02138473A TREATING DEVICE AND TREATING METHOD 失效
公开(公告)号：JPH02138473A
公开(公告)日：1990-05-28
申请号：JP20640289
申请日：1989-08-09
申请人： TEL SAGAMI LTD
发明人： FUSE NOBORU , KITAYAMA HIROBUMI
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , H01L21/205 , H01L21/22 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To prevent the deterioration in the quality of SiO2 films on semiconductor wafers by supplying an etching gas to the spacing between the outer tube and the inside tube at the time of disposing the plural wafers into the inside tube, supplying a reaction gas, such as SiH4, to the tube and heating the wafers to form the SiO2 films on the wafer surfaces. CONSTITUTION:The plural semiconductor wafer substrates 22 are perpendicularly spaced from each other and are stuck in the cylindrical inside tubes 18 and while the wafers are heated by energizing an outside heater 26, the SiH4 is supplied into the tube from a gas introducing tube 33 to form the SiO2 films on the surfaces of the wafers 22. The SiH4 of the reaction gas enters the spacing 54 formed of the outer reaction tube 16 and the inside tube 18 from many small holes 36 of the inside cylinder 18. The reaction products deposit and stick to the inside wall of the reaction tube 16 and the outside surface of the inside tube 18 and deteriorate the quality of the wafers 22 by sticking thereto. The gaseous mixture composed of the etching gas, such as HCl, and inert gas, such as Ar or N2, is supplied into the reaction tube 16 from an upper inlet 28 to prevent the fine SiO2 powder of the reaction products from depositing and sticking to the inside surface of the reaction tube 16 and the outer side of the inside tube 18, thereby preventing the degradation in the quality of the treated surfaces of the semiconductor wafers 22.

10. 发明专利

JPH04150902A TRAP DEVICE 失效
公开(公告)号：JPH04150902A
公开(公告)日：1992-05-25
申请号：JP27089390
申请日：1990-10-09
申请人： TEL SAGAMI LTD
发明人： KITAYAMA HIROBUMI , IWABUCHI KATSUHIKO
IPC分类号： F04F9/06 , B01D8/00 , C23C16/44 , C23C16/455 , H01L21/205
摘要： PURPOSE:To prevent captured substances from scattering out of a trap device by a method wherein a resilient body is made to expand between the connecting part to an exhaust emission system and a capture mechanism for harmful substances to obstruct the connecting part, so that the trap device is removed from the exhaust emission system. CONSTITUTION:A trap device 1 capable of being freely detachably inserted into an exhaust emission pipe 10 is provided with a cooling fin 3 and a water cooling jacket 4 as a capture mechanism for the harmful substances contained in the gas flowing through the exhaust emission pipe 10. Between the connecting part to the exhaust emission pipe 10 and the aforesaid capture mechanism are provided inserting holes 14 and 15 through which to insert a pipe obstruction balloon 13 inflatable by pressure fluid. The trap device 1 is removed from the pipe 10 with the connecting part to the exhaust emission pipe 10 obstructed with the inflated balloon 13. As a result, when the trap device is removed from the exhaust emission system, the captured substances are prevented from scattering and the occurrence of dusts responsible for a lowering in the yield rate can also be prevented with the improvement of the safety.

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