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1. 发明专利

JPH05251357A 失效
公开(公告)号：JPH05251357A
公开(公告)日：1993-09-28
申请号：JP3878692
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TOKYO ELECTRON TOHOKU KK
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： H01L21/205 , H01L21/225
摘要： PURPOSE:To enhance the uniformity inside a face of the film thickness of a thin film and to obtain a good step coverage shape. CONSTITUTION:A wafer boat on which many wafers have been mounted is loaded inside a reaction tube; the inside of the reaction tube is heater to, e.g. 620 deg.C; the inside of the reaction tube is evacuated to produce a vacuum; after that, 100% monosilane gas is introduced; a polysilicon layer 91 is formed on each wafer in a low-pressure state. After that, the inside of the reaction tube is evacuated; phosphine gas is introduced; a phosphorus-adsorbed layer 92 is formed on the polysilicon layer 91 in a low-pressure state; in addition, the inside of the reaction tube is evacuated; a polysilicon layer 91 is formed on the phosphorus-adsorbed layer 92 by using 100%; monosilane gas. Said operation is repeated ; a laminated body 9 having a sandwich structure is obtained; after that, an annealing treatment is executed; the phosphorus-doped layers 92 are diffused into the polysilicon layers 91.

2. 发明专利

JPH05251347A 失效
公开(公告)号：JPH05251347A
公开(公告)日：1993-09-28
申请号：JP3878792
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TOKYO ELECTRON TOHOKU KK
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： H01L21/205
摘要： PURPOSE:To shorten the delay time of a film formation operation by a method wherein the mixture amount of a carrier gas is made small at the initial stage of the film formation process of a layer composed mainly of silicon on the surface in which components other than silicon are contained. CONSTITUTION:Polysilicon layers 91 and phosphorus-adsorbed layers 92 are formed on a wafer W in this order; after that, the temperature at the inside of a reaction tube 2 is set to e.g. 600 deg.C or higher; a treatment gas used to form a silicon layer is introduced into the reaction tube 2; the inside of the reaction tube 2 is maintained at a pressure of, e.g. 0.4Torr. As the treatment gas, a mixed gas of, e.g. monosilane gas and a small amount of a carrier gas is used at least at the initial stage of a film formation process or 100% of monosilane gas is used. When phosphorus exists at a substratum, the delay time T of the film formation process is shortened by using said treatment gas.

3. 发明专利

JPH06120150A THIN FILM TREATMENT 失效
公开(公告)号：JPH06120150A
公开(公告)日：1994-04-28
申请号：JP3878892
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： C23C16/52 , H01L21/205
摘要： PURPOSE:To perform a surface treatment being high in uniformity by forming a thin film in a temperature region excepting the boundary temperature region between a temperature for attaining an amorphous state and that for attaining a polycrystalline state. CONSTITUTION:A treated atmosphere in a reaction tube 2 is heated by a heater 13 so that the temperature of the center part of a wafer boat 5 is 580 deg.C and below for attaining an amorphous state or 60 deg.C and over for attaining a polycrystalline state. After that, the inside of the reaction tube 2 is loaded with the wafer boat 5, which contains e.g. 100 wafers W arranged at 4.76mm pitch, from a lower opening by a ramp 4. Then, the inside of the reaction tube 2 is brought to a predetermined degree of vacuum, a film-forming gas containing the main component of a thin film is introduced from a second gas introduction tube 62 into an inner cylinder 22, air is discharged from the reaction tube 2 so that the inside of the reaction tube is put under 0.4Torr pressure, and film forming is performed while the wafer boat 5 is rotated. Thus, the uniformity of smoothness of the surface of the thin film is improved.

4. 发明专利

JPH04157161A CLEANING METHOD 失效
公开(公告)号：JPH04157161A
公开(公告)日：1992-05-29
申请号：JP28079190
申请日：1990-10-19
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NIINO REIJI , FUJITA YOSHIYUKI , RI HIDEKI , MIKATA YUICHI , MIYAZAKI SHINJI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/44 , B08B9/08 , C23F1/12 , H01L21/205 , H01L21/22 , H01L21/304
摘要： PURPOSE:To efficiently clean the inner wall of a chamber used for formation of Si films on semiconductor wafers in a short time in order to remove Si film depositing on the inner wall by supplying a CIF3 gas at specified temp. and pressure condition. CONSTITUTION:In a quartz reaction chamber 2, lots of semiconductor wafers 8 are mounted on wafer boats 9 and Si films are formed on the surfaces of wafers 8 by evacuating the chamber 2, heating at 450-650 deg.C, and supplying a treating gas such as SiH4 from a reaction gas supplying system 11. Because Si films also deposit on the inner wall of the chamber 2 during this process, the chamber is cleaned as follows after the treated wafers are taken out from the chamber 2. The chamber 2 is maintained at >=450 deg.C with a heater 5, into which ClF3 gas 15 of 10-50vol.% concn. in N2 gas as diluting gas is introduced. Then the Si film material depositing on the inner wall is cleaned off under such pressure condition that the etching rate of the depositing Si film becomes higher than the etching rate of the material of the chamber 2. Thus, the Si film material on the inner wall can be removed without damaging the chamber 2.

5. 发明专利

JPH04218916A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH04218916A
公开(公告)日：1992-08-10
申请号：JP40394390
申请日：1990-12-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MIYAZAKI SHINJI , MIKATA YUICHI , MORIYA TAKAHIKO , NIINO REIJI , NISHIMURA SUKEHIKO
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C30B25/14 , H01L21/205 , H01L21/22
摘要： PURPOSE:To form each of film thickness and composition of a CVD film almost uniformly among substrates when forming the CVD film of a large amount of treatment substrates by batch treatment. CONSTITUTION:In a heat treatment device provided with a gas nozzle 30' which extends along a side of a treatment substrate mounted region inside a reaction container 10 and is provided with gas blow-off openings in places lengthwise, direction theta of the gas blow-off opening of the gas nozzle based on a standard of center line direction which connects a gas nozzle center and a center direction in a treatment substrate surface is set within a range not less than an angle formed to the center line direction.

6. 发明专利

JPH042118A FORMATION OF CVD FILM 失效
公开(公告)号：JPH042118A
公开(公告)日：1992-01-07
申请号：JP14297390
申请日：1990-05-31
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NIINO REIJI , MORIYA TAKAHIKO
IPC分类号： H01L21/205 , H01L21/22 , H01L21/31
摘要： PURPOSE:To reduce the generation of dust at a time when a substrate after film formation treatment is shifted, and to form a CVD film having high film thickness uniformity in a substrate surface by forming the CVD film under the state in which a ring-shaped baffle is mounted separately to the upper section of the peripheral section of the film formation treating surface of the substrate to be treated. CONSTITUTION:Several dozen semiconductor wafers 6 are arranged at regular intervals into grooves 9 formed to a wafer boat 7 at regular pitches in the vertical direction while ring-shaped baffles 30 are installed among these semiconductor wafers 6 respectively. Film formation to sections near the peripheral sections of the semiconductor wafers 6 can be inhibited by the baffles 30, and the state of the applying formation of CVD films can be controlled. That is, more thickening of film thickness near the peripheral sections than other sections can be prevented.

7. 发明专利

JPH05166741A SUBSTRATE SUPPORTING TOOL FOR HEAT TREATING APPARATUS 失效
公开(公告)号：JPH05166741A
公开(公告)日：1993-07-02
申请号：JP33107691
申请日：1991-12-16
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD , TOSHIBA CORP
发明人： NIINO REIJI , SHIRATANI ISAO , SHIMADA YUTAKA , FUKUSHIMA HIROKI , KITAYAMA HIROBUMI , YONEKURA AKEMICHI , MIKATA YUICHI
IPC分类号： H01L21/324 , C23C16/458 , C30B25/12 , H01L21/22 , H01L21/673
摘要： PURPOSE:To provide a board supporting tool for a heat treating apparatus in which uniformity of treating a substrate to be treated can be improved as compared with prior art, its manufacture is facilitated and the substrate to be treated can be automatically conveyed. CONSTITUTION:Four posts 4 are provided between an upper supporting plate 2 and a lower supporting plate 3 of a substrate supporting tool 1 for a heat treating apparatus. Wafer supporting grooves 6 each for supporting a semiconductor wafer 5 and annular plate supporting grooves 8 each for supporting an annular plate 7 made of quartz, etc., formed in a larger diameter than that of the wafer 5 are alternately provided at the posts 4.

8. 发明专利

JPH04155827A CLEANING METHOD 失效
公开(公告)号：JPH04155827A
公开(公告)日：1992-05-28
申请号：JP28079290
申请日：1990-10-19
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NIINO REIJI , IMAMURA YASUO , MIKATA YUICHI , MIYAZAKI SHINJI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： H01L21/31 , H01L21/304
摘要： PURPOSE:To clean up the Si3N4 film stuck to the inside of a process vessel efficiently and safely within a short time by a method wherein the cleaning gas containing dilluted ClF3 is fed to the process vessel in the state kept at the temperature exceeding 450 deg.C but slightly lower than the temperature to form the Si3N4 film. CONSTITUTION:After finishing the formation of a film, the process gas inside a reaction vessel 2 is exhausted by hydrogen purging or nitrogen purging etc., to bring about the state at atmospheric pressure and then a wafer boat 9 is unloaded from the reaction vessel 2. At this time, the temperature inside the reaction vessel 2 is kept at the film formation process temperature. Next, the reaction vessel 2 is sealed up by a cap part 6 and then a cleaning gas is fed from a gas leading-in pipe 10 to the reaction vessel 2 at the temperature of about 550 deg.C-650 deg.C slightly lower than the process temperature. Before starting the cleaning process, respective feeding flow rates of ClF3 gas and N2 gas contained in the cleaning gas are previously adjusted by mass flow controllers 17, 18. Furthermore, it is recommended that the pressure inside the reaction vessel 2 is to be set up within the range not exceeding 5.0Torr.

9. 发明专利

JPH0513353A VERTICAL HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH0513353A
公开(公告)日：1993-01-22
申请号：JP16666491
申请日：1991-07-08
申请人： TOKYO ELECTRON LTD
发明人： NIINO REIJI , SHIRATANI ISAO , MIYAGAWA MASAAKI
IPC分类号： H01L21/22
摘要： PURPOSE:To reduce the adhering quantity of reaction by-product on an undesired position from the conventional quantity, reduce maintenance frequency and improve productivity. CONSTITUTION:A manifold cover 20 is provided between an inner tube 11 and a manifold 17. The manifold cover 20 is formed of quartz in cylinder-shape and is provided along the inner wall of the manifold 17 to be extended from a point between the inner tube 11 and the manifold 17 to the point between the inner tube 11 and an outer tube 12. The top edge is designed to be extended to a position where a heater 13 is provided on the external side of the outer tube 12.

10. 发明专利

JPH0786264A METHOD FOR FORMING FILM 失效
公开(公告)号：JPH0786264A
公开(公告)日：1995-03-31
申请号：JP18939593
申请日：1993-06-30
申请人： TOKYO ELECTRON LTD
发明人： NIINO REIJI , OBE SATOYUKI , IKEGAWA HIROAKI
IPC分类号： H01L21/31 , H01L21/318
摘要： PURPOSE:To carry out oxidizing an nitriding steps continuously in a short time and form an oxide film with good electrical characteristics, by oxidizing the surface of a workpiece, and nitriding the oxide film at a given temperature after a nitriding gas is substituted for the oxide material. CONSTITUTION:The inside of a reaction container 30 is heated with an outer heater 21 to a given reaction temperature, and a given oxidizing gas is fed to the reaction container 30. The surface of workpieces (W) held by a holding jig 40 is oxidized with the oxidizing gas to form an oxide film on the surface of the workpiece (W). Then, a nitriding gas for substitution is supplied in the reaction chamber 30 while the inside of the container 30 is heated by the outer heater 21 at a given temperature so as to nitride the oxide film. As an example, the temperature in the container 30 is set at 850 deg.C while steam is fed so that the silicon of the semiconductor wafer (W) is wet-oxidized to form an oxide film. Then, the temperature is set at 900 deg.C, and an ammonia gas is fed to form a silicon nitride film on the oxide film.

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