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1. 发明专利

JPH05206043A HEAT TREATMENT METHOD 失效
公开(公告)号：JPH05206043A
公开(公告)日：1993-08-13
申请号：JP3399292
申请日：1992-01-27
申请人： TEL SAGAMI LTD
发明人： OKASE WATARU , YAGI YASUSHI , KAWACHI SATOSHI
IPC分类号： C23C16/46 , C30B25/10 , H01L21/22 , H01L21/31 , H01L21/324
摘要： PURPOSE:To rapidly raise the temperature of an object to be treated to an established treatment temperature by shifting the object once to a position nearer the heat source than its setting position and then, returning it to the setting position when the object is carried to the setting position. CONSTITUTION:A shifting means 6 enables a wafer holding tool 2 which holds a semiconductor wafer W to be raised in a reaction tube 1 when the semiconductor wafer W is thermally treated. Then, when the heat treatment is completed, the wafer holding tool 2 is lowered outside the reaction tube 1. When the semiconductor wafer W is heated for the heat treatment, the rise of the inner temperature of the semiconductor wafer W is slow as compared with the speed at which the surface temperature rises. Therefore, the semiconductor wafer W held by the wafer holding tool 2 is rapidly raised by the shifting means 6 to a closer position L2 beyond the setting position L1 of the reaction tube 1. Then, the semiconductor wafer W is returned by the shifting means 6 to the setting position L1. In this way, the temperature of the object to be treated can rapidly be stabilized at the established treatment temperature.

2. 发明专利

JPH05206042A HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS 失效
公开(公告)号：JPH05206042A
公开(公告)日：1993-08-13
申请号：JP3399092
申请日：1992-01-27
申请人： TEL SAGAMI LTD
发明人： OKASE WATARU , YAGI YASUSHI , KAWACHI SATOSHI
IPC分类号： H01L21/22 , H01L21/31
摘要： PURPOSE:To rapidly raise the temperature of an object to be treated by the radiant heat from the front side of a cylindrical heat source in its traveling direction, and to enable the entire surface of the flat object to be thermally treated at an even temperature by correlatively shifting the flat object rapidly in the cylinder of the cylindrical heat source. CONSTITUTION:In the cylinder of a cylindrical heat source 3, a semiconductor wafer W is rapidly shifted. The temperature of the semiconductor wafer W is rapidly raised by the radiant heat from the front part of such cylindrical heat source in its traveling direction, thus making it possible to execute a rapid heat treatment. As a result, any slip, deformation, warping, and the like of the semiconductor wafer W are not created, hence enabling a highly reliable heat treatment to be executed. Also, it is possible to carry out a rapid heat treatment which is applicable to the finer design rule of semiconductor devices as well as the provision of a larger diameter of semiconductor wafers. Therefore, a remarkably excellent efficiency can be demonstrated in various heat treatments of the formation of capacitor insulating film and others for which a high dielectric material is specified.

3. 发明专利

JPH05196371A FORCED AIR COOLING DEVICE FOR HEAT TREATMENT FURNACE 失效
公开(公告)号：JPH05196371A
公开(公告)日：1993-08-06
申请号：JP18033792
申请日：1992-06-15
申请人： TEL SAGAMI LTD
发明人： MONOE OSAMU
IPC分类号： F27B17/00 , F27D1/12 , F27D9/00 , H01L21/22
摘要： PURPOSE:To perform rapid and uniform heat treatment cooling by a method wherein a plurality of suction ports are formed in the opening end part of a heater part, a discharge port is formed in the upper surface thereof, and air in a gap between a process tube connected to the discharge port and the heater part is discharged. CONSTITUTION:A suction port 32 is formed such that air outside a device is caused to flow therethrough from the lower end part of a gap 16 between a process tube 12 and a heater part 14. The suction port 32 is communicated with the open air and comprises a plurality of suction openings 32a formed at equal intervals in a peripheral direction, a communicating port 32b formed in the lower end part of the heater part 14 in a state to front on the gap 16, and an air introduction port 32c. As noted above, since a plurality of the suction ports 32 are formed in the suction duct 33, air is forced to uniformly flow throughout the whole area of the gap 16 in cooperation with a discharge port 24. Thus, uniformity of cooling of a heat treatment furnace 10 is improved. Further, since flow resistance of air can be reduced, cooling speed can be improved.

4. 发明专利

JPH05190479A VERTICAL HEAT TREATING APPARATUS 失效
公开(公告)号：JPH05190479A
公开(公告)日：1993-07-30
申请号：JP20716792
申请日：1992-07-10
申请人： TEL SAGAMI LTD
发明人： WATANABE SHINGO
IPC分类号： C23C16/44 , H01L21/22
摘要： PURPOSE:To prevent a bursting accident of a heat insulation unit to be used for a vertical heat treating apparatus. CONSTITUTION:A cover 4 for blocking a lower end opening of a reaction vessel 1 is composed of a heat insulation unit cover 5 and a heat insulation cylinder support board 6. The cover 5 is opened at its lower end, and formed with a bottomed cylindrical shape at its upper end. A heat insulation cylinder 7 is disposed in an area surrounded by the cover 5, and supported by the board 6. Vent holes 74, 61 are respectively formed at the bottom of the cylinder 7 and the board 6, and the interior of the cylinder 7 is maintained at the atmospheric pressure. Since the cylinder 7 is airtightly separated from an area to be heat treated, it is not contaminated from the cylinder 7. Since the cylinder 7 is maintained at the atmospheric pressure, there is no fear of bursting it.

5. 发明专利

JPH05121341A HEAT TREATMENT APPARATUS 失效
公开(公告)号：JPH05121341A
公开(公告)日：1993-05-18
申请号：JP30719791
申请日：1991-10-28
申请人： TEL SAGAMI LTD
发明人： OKASE WATARU
IPC分类号： H01L21/324 , H01L21/22 , H01L21/31
摘要： PURPOSE:To provide a rapid heat treatment for an overall face of a planar workpiece at a uniform temperature with a simplified control system for controlling the moving rate of the workpiece, by providing an auxiliary heater at an outer face near an entrance of a treatment container. CONSTITUTION:A planar heating source 2 is mounted on the inside wall at an upper part of an adiabatic heat insulating material 4 so that a planar heat source 2 is located opposite to the treatment face 11 of a semiconductor wafer 1. The heat source 2 has a resistive heating body including planar alloy wire made of MoSi2, iron and the like. The face of the heat source 2 is circular like the treatment face 11 of the semiconductor wafer 1 and the radius thereof is about two times that of the wafer 1 so that an overall face of the wafer 1 is controlled at a uniform temperature. On the other hand, an auxiliary heater 21 is provided at an outer face near an entrance of a treatment container 7 to control the temperature. A cooling unit 22 is also provided on the outside of the heater 21 to cool the heater 21 forcedly. Consequently, with a simplified control system for controlling the moving rate of a planar workpiece, a rapid heat treatment can be provided for the overall face of the planar workpiece at a uniform temperature.

6. 发明专利

JPH05117861A GAS FLOW JOINT AND HEAT TREATING DEVICE 失效
公开(公告)号：JPH05117861A
公开(公告)日：1993-05-14
申请号：JP30719591
申请日：1991-10-28
申请人： TEL SAGAMI LTD
发明人： OKASE WATARU
IPC分类号： C23C16/44 , C23C16/455 , F16L11/11 , F16L27/10 , H01L21/205 , H01L21/22
摘要： PURPOSE:To make efficient heat treatment by connecting a treating vessel, a gas supplying section and a gas discharge section by the gas flow joint consisting of an extensible and contractable and universally bendable tubular body made of a resistance heating material. CONSTITUTION:The gas flow joint is constituted of the extensible and contractable and universally bendable bellows-like tubular body 1 constituted of the resistance heating element. This joint is used for the gas flow joint of the heat treating device having the gas flow joint for connecting the treating vessel, the gas supplying section and/or the gas discharge section. The gas flow joint having excellent heat resistance and leakage resistance is obtd. in this way and the generation of dew condensation and unnecessary deposits is prevented. In addition, the treating gases can be smoothly passed and the efficient heat treatment is executed.

7. 发明专利

JPH0547615A SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0547615A
公开(公告)日：1993-02-26
申请号：JP22969791
申请日：1991-08-16
申请人： TEL SAGAMI LTD
发明人： OKASE WATARU
IPC分类号： H01L21/02
摘要： PURPOSE:To allow heat treatment without film forming defects or thermal stress by providing a through hole at the center of a semiconductor wafer. CONSTITUTION:A through hole 15 is provided at the center of a semiconductor wafer 1. The size of the through hole 15 is 5-10mm. The through hole 15 is provided on silicon ingot or on sliced ingot. For forming the through hole 15, a core drill, etc., is used. The shape of the through hole 15 can be round, triangle, square, etc. Thus, since treatment gas passes through the through hole 15 when the semiconductor wafer 1 is heat treated, the residence of the treatment gas is prevented and the uniform treatment is allowed. Since the semiconductor wafer 1 is held and aligned by using the through hole 15, the structure of the wafer holder is simplified.

8. 发明专利

JPH04273990A HEATING DEVICE 失效
公开(公告)号：JPH04273990A
公开(公告)日：1992-09-30
申请号：JP5971091
申请日：1991-02-28
申请人： NICHIAS CORP , TEL SAGAMI LTD
发明人： NAKAO MASARU , SAKURAI SEIJI , MIYAHARA YOSHIHISA , MOTOYOSHI YOSHIYUKI
IPC分类号： F27D11/02 , C23C16/46 , H01L21/205 , H01L21/22 , H05B3/64 , H05B3/66
摘要： PURPOSE:To provide a heating device for a dispersion furnace in which a use of expensive alumina fiber is restricted to its minimum and further a sufficient heat-resistant and thermal insulation is provided. CONSTITUTION:A thermal insulation structure of a heater device is formed by an inner layer part a1 directly supporting a heater 1 and an outer layer part a2 enclosing the inner layer part a1. The inner layer part a1 is of a fibrous layer with an apparent density of 0.3 to 0.8g/cm composed of alumina fiber/non- organic filler material/ non-organic binder. The outer layer a2 is a fibrous layer with an apparent density of 0.2 to 0.4g/cm composed of alumina silica fiber/non- organic binder and then both layers are formed into an integral layer having no seam. With such an arrangement, it is possible to get in a less-expensive manner a heating device having a less amount of thermal capacity and capable of shortening a temperature increasing or a temperature decreasing time within the furnace as well as holding a less amount of thermal dispersion.

9. 发明专利

JPH04269825A VERTICAL TYPE HEAT-TREATING DEVICE 失效
公开(公告)号：JPH04269825A
公开(公告)日：1992-09-25
申请号：JP10369491
申请日：1991-02-26
申请人： TEL SAGAMI LTD
发明人： SAKATA KAZUNARI
IPC分类号： H01L21/22 , C30B33/00
摘要： PURPOSE:To prevent the adhesion of dust to semiconductor wafers and, at the same time, to prevent the contamination in maintenance and clean rooms by noxious gases by carrying all of a clean gas passed through a waiting space where wafer boats carrying the semiconductor wafers in piled up states wait for the next process to a prescribed treatment system without discharging the gas to the maintenance room. CONSTITUTION:A clean gas is introduced into this vertical type heat-treating device from a clean gas introducing port 20 provided through the bottom section of the freely-openable rear wall of an enclosure 2 and made to flow into a waiting space 13 through a dust collecting filter 24 so that adhesion of dust to semiconductor wafers 12 waiting for the next process can be prevented by means of side flows. Part of the gas passed through the waiting space 13 is recirculated to the space 13 through a recirculating path 31 and, at the same time, all of the exhaust gas is carried to an exhaust gas treatment system 37 for treatment.

10. 发明专利

JPH04269823A HEAT-TREATING DEVICE 失效
公开(公告)号：JPH04269823A
公开(公告)日：1992-09-25
申请号：JP5309891
申请日：1991-02-26
申请人： TEL SAGAMI LTD
发明人： MIMURA KOJI
IPC分类号： F27D17/00 , H01L21/22 , H01L21/31
摘要： PURPOSE:To obtain a heat-treating device which can discharge the exhaust gas after lowering its temperature and can effectively utilize the space. CONSTITUTION:This heat-treating device performs heat treatment on a plurality of works W to be treated housed in a reaction tube 1 by introducing a process gas into the tube 1. Since a readiaor 28 is provided in a hot exhaust has collecting duct 21 in the main body 20 of the device, the exhaust gas can be discharged after the temperature of the exhaust gas is lowered.

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