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1. 发明专利

JP2005013787A Coating film-forming device and coating film-forming method 审中-公开
标题翻译：涂膜成膜装置和涂膜成膜方法
公开(公告)号：JP2005013787A
公开(公告)日：2005-01-20
申请号：JP2003178626
申请日：2003-06-23
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , MIKATA YUICHI , SAITO KIMIHIDE
IPC分类号： B05D1/26 , B05C5/00 , B05C11/06 , B05C11/10 , G03F7/16 , H01L21/00 , H01L21/027 , H01L21/31
CPC分类号： H01L21/6715
摘要： PROBLEM TO BE SOLVED: To form an insulating film of in-plane uniformity on a substrate surface by controlling a drying state of a coating liquid applied on the substrate surface.
SOLUTION: While supplying the coating liquid from a coating liquid nozzle 4 onto a surface of a wafer W held by a substrate holding part for horizontally holding the substrate, the substrate holding part is relatively moved in the back and forth directions to the coating liquid nozzle 4 to apply the coating liquid onto the wafer W surface from a front end edge to a back end edge and whole surface of a region where the coating liquid is applied is covered with a drying prevention plate 6a (6b) provided by facing the surface parallel at a height position of ≤2mm from the wafer W surface. In this case, since a solvent atmosphere of high concentration is formed between the wafer W surface and the drying prevention plate 6a, a drying state of the coating liquid is adjusted within the wafer W surface and thereby the insulating film of uniform film thickness can be formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过控制施加在基板表面上的涂布液的干燥状态，在基板表面上形成面内均匀性的绝缘膜。解决方案：在将涂布液从涂液喷嘴4供给到由用于水平保持基板的基板保持部保持的晶片W的表面上时，基板保持部相对于前后方向相对移动涂布液喷嘴4将涂布液从前端边缘到后端边缘以及施加涂布液的区域的整个表面涂覆在晶片W表面上，用防干燥板6a（6b）覆盖，所述防干燥板6a 表面在与晶片W表面的≤2mm的高度位置平行。在这种情况下，由于在晶片W表面和防干燥板6a之间形成高浓度的溶剂气氛，因此在晶片W表面内调节涂布液的干燥状态，能够使膜厚均匀的绝缘膜形成。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005116553A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005116553A
公开(公告)日：2005-04-28
申请号：JP2003344753
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , SAITO KIMIHIDE , MIKATA YUICHI
IPC分类号： B05D1/26 , B05C5/00 , B05C13/00 , B05D7/00 , H01L21/31 , H01L21/312 , H01L21/768
CPC分类号： H01L21/6715 , G03F7/162 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To surely apply a coating liquid onto all the surface of a wafer so as to form a coating film when the coating liquid is applied on the surface of the wafer in a manner wherein a picture is drawn with a single stroke of the brush, while a coating liquid nozzle is made to scan the surface of the wafer in a lateral direction and while the wafer is intermittently moved in a longitudinal direction.
SOLUTION: The wafer is so oriented as to enable the scanning direction of the coating liquid nozzle 5 to intersect with any of dicing lines D cut in the surface of the wafer W to split the wafer W into discrete chips, then a liquid coating operation is carried out, and the wafer W is reoriented so as to recover its original orientation and then unloaded. The set angles of the wafers W of each type are previously written in their recipes in accordance with categoris the wafter W, and the orientation of the wafer W is set up by selection of the recipe.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了确保将涂布液施加到晶片的所有表面上，以便当涂覆液体以如下方式施加在晶片的表面上时形成涂膜，其中以同时使涂布液喷嘴在横向方向上扫描晶片的表面，同时晶片在纵向上间歇地移动。解决方案：晶片被定向成使得涂布液喷嘴5的扫描方向能够与在晶片W的表面上切割的任何切割线D交叉，以将晶片W分离成离散的芯片，然后将液体进行涂布操作，并且将晶片W重新定向以恢复其原始取向然后卸载。每种类型的晶片W的设定角度根据分类W预先写入其配方中，并且通过选择配方来建立晶片W的取向。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2001068468A FILM FORMATION 失效
公开(公告)号：JP2001068468A
公开(公告)日：2001-03-16
申请号：JP24297499
申请日：1999-08-30
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SAKURAI YOSHINOBU , SHIOZAWA JUNICHI , MIKATA YUICHI , TSUNASHIMA YOSHITAKA , INUMIYA SEIJI , IMAI MASAYUKI , YONEKAWA TSUKASA
IPC分类号： H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve leak property of a formed insulation film by repeating a film formation process executed by supplying first and second film formation gases at each flow rate, and a process for controlling or stopping film formation reaction by reducing the gas flow rate of at least one of first and second film formation gases. SOLUTION: At a time t1, a silicon oxide film is formed on a wafer by supplying first film formation gas of SiCl4 gas and second film formation gas of N2O gas to each reaction tube at a specified flow rate. At a time t2, a flow rate is decreased to zero, for example, N2 gas which is purge gas is supplied to a reaction tube at a controlled specified flow rate, the inside of a reaction container is purged between the time t2 and the time t3, and at the time t3, the flow rate of N2 gas is reduced to zero. SiCl4 gas and N2O gas are supplied to a reaction container, film formation is carried out on a wafer. Thereafter a cycle of a supply process of SiCl4 gas and N2O gas and a process for stopping the film formation gases and purging by N2 gas is repeated.

4. 发明专利

JPH0778781A ATMOSPHERIC PRESSURE HIGH-TEMPERATURE PROCESSING DEVICE AND GASD REPLACING METHOD THEREOF 失效
公开(公告)号：JPH0778781A
公开(公告)日：1995-03-20
申请号：JP34643693
申请日：1993-12-22
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： YAMAGA KENICHI , YAMAMOTO AKITO , MIKATA YUICHI
IPC分类号： H01L21/205 , H01L21/22
摘要： PURPOSE:To enhance an atmospheric pressure high-temperature processing device in heat resistance, pressure resistance, and sealing properties so as to enable it to be exhausted and then filled with gas. CONSTITUTION:A cap 14 is provided to a processing chamber 4 wherein works W contained in a work housing boat 8 are thermally treated at high temperatures under the atmospheric pressure through the intermediary of a first high-temperature heat-resistant sealing means 32. An exhaust system 64 is connected to the exhaust port 26 of the processing chamber 4 through the intermediary of a second high-temperature heat-resistant sealing means 62, and a vacuum pump 78 is provided to the exhaust system 64 for replacing gas. In a gas replacing operation carried out before a process starts, air is exhausted from the processing chamber 4 by the vacuum pump 78, and inert gas is introduced into the reaction chamber 4 for replacing air when the reaction chamber is exhausted as high in degree of vacuum as prescribed.

5. 发明专利

JPH04187771A CLEANING METHOD 失效
公开(公告)号：JPH04187771A
公开(公告)日：1992-07-06
申请号：JP31704890
申请日：1990-11-21
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIRATANI ISAO , MIYAZAKI SHINJI , MIKATA YUICHI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/44 , C23F4/00 , H01L21/205 , H01L21/31
摘要： PURPOSE:To easily and safely remove arsenic compds. by passing a gas contg. NF3 through a treating chamber heated to a specified temp. and dry-cleaning the chamber by the thermal decomposition of the gas. CONSTITUTION:A treating chamber 1 is heated to 650 deg.C or higher by a heating means 2. A cleaning gas contg. NF3 gas and a carrier gas (e.g. nitrogen) is prepared. The cleaning gas is introduced into the chamber 1 which is to be cleaned. The arsenic oxides depositing in the chamber 1 are easily and safely removed in this way.

6. 发明专利

JPH04157161A CLEANING METHOD 失效
公开(公告)号：JPH04157161A
公开(公告)日：1992-05-29
申请号：JP28079190
申请日：1990-10-19
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NIINO REIJI , FUJITA YOSHIYUKI , RI HIDEKI , MIKATA YUICHI , MIYAZAKI SHINJI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/44 , B08B9/08 , C23F1/12 , H01L21/205 , H01L21/22 , H01L21/304
摘要： PURPOSE:To efficiently clean the inner wall of a chamber used for formation of Si films on semiconductor wafers in a short time in order to remove Si film depositing on the inner wall by supplying a CIF3 gas at specified temp. and pressure condition. CONSTITUTION:In a quartz reaction chamber 2, lots of semiconductor wafers 8 are mounted on wafer boats 9 and Si films are formed on the surfaces of wafers 8 by evacuating the chamber 2, heating at 450-650 deg.C, and supplying a treating gas such as SiH4 from a reaction gas supplying system 11. Because Si films also deposit on the inner wall of the chamber 2 during this process, the chamber is cleaned as follows after the treated wafers are taken out from the chamber 2. The chamber 2 is maintained at >=450 deg.C with a heater 5, into which ClF3 gas 15 of 10-50vol.% concn. in N2 gas as diluting gas is introduced. Then the Si film material depositing on the inner wall is cleaned off under such pressure condition that the etching rate of the depositing Si film becomes higher than the etching rate of the material of the chamber 2. Thus, the Si film material on the inner wall can be removed without damaging the chamber 2.

7. 发明专利

JPH0992626A WAFER BOAT FOR HEAT TREATMENT 失效
公开(公告)号：JPH0992626A
公开(公告)日：1997-04-04
申请号：JP24333495
申请日：1995-09-21
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MARUCHIN SHIYUREMUZU , YAMAMOTO AKITO , MIKATA YUICHI , YAMAGA KENICHI , NISHI KATSUO
IPC分类号： H01L21/22 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To eliminate the nonuniformity of temperature within a wafer due to boat rod effect. SOLUTION: A support tray 16 is mounted to a support rod 14. With the support tray 16, an upper surface of the annular support tray 16 (a surface where a wafer 15 is mounted) is flat except one portion. A recess 18a is formed on the upper surface of the support tray 16 near the support rod 14. A wafer 15 does not contact the support tray 16 in the recess 18a, thus causing the total heat content of the support rod 14 and the support tray 16 in circumferential direction of the wafer 15 to be nearly equal and hence contributing to the uniformity of the temperature distribution of the wafer 15.

8. 发明专利

JPH06120150A THIN FILM TREATMENT 失效
公开(公告)号：JPH06120150A
公开(公告)日：1994-04-28
申请号：JP3878892
申请日：1992-01-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MIKATA YUICHI , OKUMURA KATSUYA , NIINO REIJI , FUJITA YOSHIYUKI , SUZUKI HIROSHI
IPC分类号： C23C16/52 , H01L21/205
摘要： PURPOSE:To perform a surface treatment being high in uniformity by forming a thin film in a temperature region excepting the boundary temperature region between a temperature for attaining an amorphous state and that for attaining a polycrystalline state. CONSTITUTION:A treated atmosphere in a reaction tube 2 is heated by a heater 13 so that the temperature of the center part of a wafer boat 5 is 580 deg.C and below for attaining an amorphous state or 60 deg.C and over for attaining a polycrystalline state. After that, the inside of the reaction tube 2 is loaded with the wafer boat 5, which contains e.g. 100 wafers W arranged at 4.76mm pitch, from a lower opening by a ramp 4. Then, the inside of the reaction tube 2 is brought to a predetermined degree of vacuum, a film-forming gas containing the main component of a thin film is introduced from a second gas introduction tube 62 into an inner cylinder 22, air is discharged from the reaction tube 2 so that the inside of the reaction tube is put under 0.4Torr pressure, and film forming is performed while the wafer boat 5 is rotated. Thus, the uniformity of smoothness of the surface of the thin film is improved.

9. 发明专利

JPH06108256A THIN FILM FORMING METHOD AND THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH06108256A
公开(公告)日：1994-04-19
申请号：JP28673292
申请日：1992-09-30
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MATSUDA TETSURO , HAYASAKA NOBUO , MIKATA YUICHI , YONEKURA AKEMICHI , OKANO HARUO , TAKEUCHI HIROYUKI
IPC分类号： C23C16/44 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PURPOSE:To provide the method for forming a thin film capable of preventing the generation of particles. CONSTITUTION:At the time of introducing TEOS and ozone into a reaction chamber 1 storing a silicon wafer 2, heating the TEOS and ozone with a resistance heating heater 16 provided on the outer part of the reaction chamber 1 and forming a silicon dioxide film on the silicon wafer 2 by chemical reaction, the silicon dioxide is formed under the conditions in which the temp. of the inner wall of the reaction chamber 1 is lower than that of the silicon wafer 2.

10. 发明专利

JPH07106264A HEAT TREATMENT 失效
公开(公告)号：JPH07106264A
公开(公告)日：1995-04-21
申请号：JP34778593
申请日：1993-12-24
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： YAMAGA KENICHI , MIKATA YUICHI , YAMAMOTO AKITO
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31 , H01L21/316 , H01L21/318
摘要： PURPOSE:To prevent the intervention of a natural oxide film or the mixing of particles, in a thin film like an SiO2/Si3N4 film which is used as, e.g. a multilayered insulating film of a DRAM. CONSTITUTION:In a reaction tube 2 having a double tube structure constituted of an inner tube 2a and an outer tube 2a, the inside of the reaction tube 2 is maintained in a specified state of reduced pressure while, e.g. SiH2Cl2 gas and NH3 gas are made to flow from the inside of the inner tube 2a to the outside with a first gas suppling tube 4 and a discharging tube 5, and an Si3N4 film is formed on the surface of a wafer W at a temperature of 780 deg.C. The temperature of the inside of the reaction tube 2 is raised up to about 1000 deg.C, and H2O gas and HCl gas are made to flow from the outside of the inner tube 2a to the inside with a second gas suppling tube 6 and a discharging tube 7. An SiO2 film is formed by oxidizing the surface of the Si3N4 film in the state of normal pressure.

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