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1. 发明专利

JPH05166741A SUBSTRATE SUPPORTING TOOL FOR HEAT TREATING APPARATUS 失效
公开(公告)号：JPH05166741A
公开(公告)日：1993-07-02
申请号：JP33107691
申请日：1991-12-16
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD , TOSHIBA CORP
发明人： NIINO REIJI , SHIRATANI ISAO , SHIMADA YUTAKA , FUKUSHIMA HIROKI , KITAYAMA HIROBUMI , YONEKURA AKEMICHI , MIKATA YUICHI
IPC分类号： H01L21/324 , C23C16/458 , C30B25/12 , H01L21/22 , H01L21/673
摘要： PURPOSE:To provide a board supporting tool for a heat treating apparatus in which uniformity of treating a substrate to be treated can be improved as compared with prior art, its manufacture is facilitated and the substrate to be treated can be automatically conveyed. CONSTITUTION:Four posts 4 are provided between an upper supporting plate 2 and a lower supporting plate 3 of a substrate supporting tool 1 for a heat treating apparatus. Wafer supporting grooves 6 each for supporting a semiconductor wafer 5 and annular plate supporting grooves 8 each for supporting an annular plate 7 made of quartz, etc., formed in a larger diameter than that of the wafer 5 are alternately provided at the posts 4.

2. 发明专利

JPH02214113A PLASMA CVD APPARATUS 失效
公开(公告)号：JPH02214113A
公开(公告)日：1990-08-27
申请号：JP3551889
申请日：1989-02-15
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD
发明人： SHIRATANI ISAO , HAMADA YUUKI
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To obtain a formed film of a uniform film thickness without causing defective electrical connection by a method wherein a fork, a quartz boat and a connection part are coupled by means of a conical shape. CONSTITUTION:An electrode sheet 10 which has been formed inside a quartz boat 20 is supported by a fork 30 as a support body of the quartz boat 20 inside a reaction tube 8 which is provided with a reactant-gas inflow port 6 and an evacuation port 7. The tip of a connector part 21 of the quartz boat 20 is formed to be a conical protrusion 15; the other end is fit into a spring 16 so as to be freely slid; when the protrusion 15 is pressurized upward, a load is exerted downward. On the other hand, a connection part 31 of the fork 30 is provided with a conical subsidence 17 in a shape which collides with and stops the protrusion 15 at the tip of the connector part 21 of the quartz boat. Thereby, it is possible to eliminate a nonuniformity of a film thickness of a formed thin film arising from defective contact of the contact part of the fork 30 with the quartz boat 20 due to deformation of the fork 30, and a thin film of a uniform thickness can be formed.

3. 发明专利

JPH03159233A HEAT-TREATING FURNACE DEVICE 失效
公开(公告)号：JPH03159233A
公开(公告)日：1991-07-09
申请号：JP29999289
申请日：1989-11-17
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD
发明人： SHIRATANI ISAO , SEKIZUKA HIROSHI
IPC分类号： H01L21/324 , H01L21/205 , H01L21/22 , H01L21/677 , H01L21/68
摘要： PURPOSE:To make it possible to verify whether an object exists at the destination of an elevator arm or not in a noncontact state by a method wherein a boat support bar for supporting a boat is provided with a fiber for light emission use, which irradiates light from the side of the point of the bar, and a fiber for light acceptance use, which receives the reflected light of the light. CONSTITUTION:A boat support bar 32 is formed into a hollow axis structure and is constituted into such a structure that fibers 40 and 42 for light emission (light sending-out) use and for light acceptance use, which are made of quartz, for example, are inserted in the interior of the bar 32, are provided in such a way as to position up to the point part of the bar 32, the end faces of the fibers 40 and 42 face to the point part of the bar 32, light is irradiated from the fiber 40 and the reflected light of the light can be received by the fiber 42. Thereby, whether an object exists at the destination in the direction of the horizontal movement of a boat elevator or not can be easily detected.

4. 发明专利

JPH02156631A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH02156631A
公开(公告)日：1990-06-15
申请号：JP31162088
申请日：1988-12-09
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD
发明人： SHIRATANI ISAO , HAYASHI YOSHINOBU , JINNAI SHINPEI , HAMADA YUUKI
IPC分类号： C23C16/50 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To execute a plasma reaction of high reliability by a method wherein an electrode plate is made electrically conductive to a conductive rod via a connection apparatus to connect it elastically and it is held. CONSTITUTION:A board 3 is provided with two rods 31 for electrode support use and two conductive rods 32, 32'; both ends of these rods are fixed by members 33; in addition, a reinforcement member 34 is attached to the middle of both ends. The rods 32, 32' are connected to an external power supply via, e.g., conductors and connectors; they are connected electrically in such a way that the rods 32, 32' constitute different poles. Connection parts of the rods 32, 32' to the external power supply are attached to, e.g., a fork 8 used to mount the board 3 and to be loaded inside a reaction tube 2. In addition, connector parts 36 used to connect electrode parts 10 electrically are installed at the individual rods 32, 32' at prescribed intervals in a longitudinal direction of the rods. These electrode plates 10 are supported elastically so as to press leads of the connector parts 36. Thereby, an accurate electrical connection is maintained.

5. 发明专利

JPH04187771A CLEANING METHOD 失效
公开(公告)号：JPH04187771A
公开(公告)日：1992-07-06
申请号：JP31704890
申请日：1990-11-21
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIRATANI ISAO , MIYAZAKI SHINJI , MIKATA YUICHI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/44 , C23F4/00 , H01L21/205 , H01L21/31
摘要： PURPOSE:To easily and safely remove arsenic compds. by passing a gas contg. NF3 through a treating chamber heated to a specified temp. and dry-cleaning the chamber by the thermal decomposition of the gas. CONSTITUTION:A treating chamber 1 is heated to 650 deg.C or higher by a heating means 2. A cleaning gas contg. NF3 gas and a carrier gas (e.g. nitrogen) is prepared. The cleaning gas is introduced into the chamber 1 which is to be cleaned. The arsenic oxides depositing in the chamber 1 are easily and safely removed in this way.

6. 发明专利

JP2008243837A Film forming apparatus, method of forming film, and storage medium 有权
标题翻译：电影成型装置，成膜方法和储存介质
公开(公告)号：JP2008243837A
公开(公告)日：2008-10-09
申请号：JP2007077607
申请日：2007-03-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOJO YUKIO , SHIRATANI ISAO , KUROKAWA MASATAKE
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To control excessive etching process within a reactor during dry cleaning while controlling the accumulated film thickness in the down-stream side of a processing region for the purpose of forming a film within the reactor of a double structure including a vertical internal pipe and an external pipe.
SOLUTION: Gas for controlling film formation is supplied to control film formation onto the external surface of an internal pipe and the internal surface of an external pipe from a gas supplying pipe having an open gas supplying port in the down-stream side of a processing region of a substrate surrounded by the internal pipe. Amount of gas supply of the gas supplying pipe is set so that a time difference (t2-t1) in the cleaning after film formation through gas supply for controlling film formation becomes equal to a half or less of the time difference (t2-t1) in the cleaning after film formation without gas supply for controlling film formation, when the time required for cleaning of thin film adhered to the internal surface of the internal pipe in the processing region is defined as t1; and the time required for cleaning of thin film adhered to the external surface of the internal pipe and the internal surface of the external pipe is defined as t2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在干燥清洁期间控制反应器内的过度蚀刻工艺，同时控制加工区域的下游侧的累积膜厚度，以便在反应器内形成双重结构的膜，包括垂直内管和外管。
解决方案：提供用于控制成膜的气体，以控制在内管的外表面和外管的内表面上的成膜，该外管从具有开口气体供应口的供气管在下游侧由内管包围的基板的处理区域。气体供给管的气体供给量被设定为使得通过用于控制成膜的气体供给形成成膜后的清洗中的时间差（t2-t1）等于时间差的一半以下（t2-t1）在没有气体供给用于控制成膜的成膜后的清洗中，当在处理区域内附着在内管内表面上的薄膜的清洗所需的时间定义为t1时; 并且清洁附着在内管的外表面和外管的内表面上的薄膜所需的时间被定义为t2。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JPH0226018A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0226018A
公开(公告)日：1990-01-29
申请号：JP17625988
申请日：1988-07-15
申请人： TOKYO ELECTRON LTD
发明人： NISHIMURA TOSHIHARU , SHIRATANI ISAO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To improve the reliability of electrical contacts by a method wherein contacts for electrical connection between electrode plates and an electrode rod are maintained not only along the thickness direction of the hole parts of the electrode plates but also between the electrode rod and the side walls of the electrode pates. CONSTITUTION:Contacts which facilitate electrical connection between an electrode rod 10 and electrode plates 4a and 4b are provided not only along the thickness direction of the hole parts of the electrode plates 4a and 4b but also between the electrode rod 10 and the side walls of the electrode plates 4a and 4b. That is, conducting members are formed on the inner surfaces of separators 14 into which the electrode rod 10 is inserted to connect the conducting members of the separators 14 to the electrode rod 10 along the required length and, further, conducting members are also provided at the end surfaces of the separators 14 to be brought into contact with the electrode plates 4a and 4b at both the ends of the separators 14 and electrical connection to the electrode plates 4a and 4b is maintained in a region corresponding to the sectional area of the separator 14. Thus, a, conducting path of the electrode 10conducting member-electrode plate can be formed. With this constitution, contact defects can be avoided and the reliability of the contacts can be improved.

8. 发明专利

JPH0513353A VERTICAL HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH0513353A
公开(公告)日：1993-01-22
申请号：JP16666491
申请日：1991-07-08
申请人： TOKYO ELECTRON LTD
发明人： NIINO REIJI , SHIRATANI ISAO , MIYAGAWA MASAAKI
IPC分类号： H01L21/22
摘要： PURPOSE:To reduce the adhering quantity of reaction by-product on an undesired position from the conventional quantity, reduce maintenance frequency and improve productivity. CONSTITUTION:A manifold cover 20 is provided between an inner tube 11 and a manifold 17. The manifold cover 20 is formed of quartz in cylinder-shape and is provided along the inner wall of the manifold 17 to be extended from a point between the inner tube 11 and the manifold 17 to the point between the inner tube 11 and an outer tube 12. The top edge is designed to be extended to a position where a heater 13 is provided on the external side of the outer tube 12.

9. 发明专利

JPH02175875A METHOD FOR CLEANING REACTION TUBE 失效
公开(公告)号：JPH02175875A
公开(公告)日：1990-07-09
申请号：JP32960388
申请日：1988-12-27
申请人： TOKYO ELECTRON LTD
发明人： HAYASHI YOSHINOBU , JINNAI SHINPEI , USHIKAWA HARUNORI , SHIRATANI ISAO
IPC分类号： C23C16/44 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To efficiently and easily clean the inside of a reaction tube by housing a boat provided with plural electrodes arrays to generate plasma in the reaction tube, admitting an etching gas into the tube, impressing an AC voltage between the counter electrodes and moving the boat near to the part to be cleaned. CONSTITUTION:The boat 4 disposed with the plural arrays of the electrode plates 11 is inserted by means of cantilevers 7A, 7B into the vacant part 1a in the reaction tube 1 and is airtightly mounted to the prescribed position. After prescribed vacuum state is maintained in the reaction tube 11, the the etching gas is introduced into the reaction tube 1 and an RF power source 14 for plasma generation is switched on. The plasma is, therefore, generated between the different poles of the electrode plates 11 via the cantilevers 7A, 7B and fixing bars 9A, 9B. A vertical moving mechanism 18 is so driven as to bring the boat 4 having such plasma region near to the inside wall surface of the reaction tube 1, by which the reaction products sticking to the inside wall surface and the boat 4 are removed.

10. 发明专利

JPH02174222A TREATMENT DEVICE 失效
公开(公告)号：JPH02174222A
公开(公告)日：1990-07-05
申请号：JP32960488
申请日：1988-12-27
申请人： TOKYO ELECTRON LTD
发明人： JINNAI SHINPEI , HAYASHI YOSHINOBU , USHIKAWA HARUNORI , SHIRATANI ISAO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent a treated gas in a reaction tube from flowing into an outside environment atmosphere and perform safety treatment operations by mounting handling parts in an airtight container even though they are exposed to the outside of a reaction furnace located on a support. CONSTITUTION:Handling parts 7 are mounted by exposing them to the outside of a reaction tube 2. The handling parts 7 which are exposed to the outside are surrounded so as to be kept airtight through bellows 20 which are superior in corrosion resistance and thermal resistance, a cylindrical airtight cup 21 having a base, and an O-ring 22. Even though slits 10 develop at a sheath tube 9 of a support 1, an extreme end part 8a of the handling parts 7 is isolated from an outside environment atmosphere in a state in which the end part 8a is kept airtight by the airtight cup 21. As a result, such a configuration prevents a treated gas 11 from flowing into the side of the outside environment atmosphere from gaps between the sheath tube 9 and support bar 8. Then, even though the support 1 breaks down, the treatment of a wafer 14 is performed without discharging the treated gas 11 from damaged parts to the outside. When a prescribed time of treatment elapses, this device automatically stops treatment operation. Then unloading is performed and a boat 15 is taken out at a prescribed position.

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