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1. 发明公开

EP2880205A1 VORRICHTUNG ZUR HERSTELLUNG EINES EINKRISTALLS DURCH KRISTALLISIEREN DES EINKRISTALLS AN EINER SCHMELZENZONE 有权
标题翻译：装置，通过结晶单晶到熔化区而用于生产单晶
公开(公告)号：EP2880205A1
公开(公告)日：2015-06-10
申请号：EP13734717.5
申请日：2013-07-01
申请人： Siltronic AG
发明人： RAMING, Georg , ALTMANNSHOFER, Ludwig
IPC分类号： C30B13/20 , C30B13/30 , C30B35/00
CPC分类号： C30B13/20 , C30B13/16 , C30B13/30 , C30B29/06 , Y10T117/1088
摘要： The invention relates to a device for producing a monocrystal by crystallizing said monocrystal in a melting area. Said device comprises a housing, an inductor for producing heat in the melting area, an after heater which surrounds the crystallizing monocrystal and subjected to heat radiation, also comprising a separating base which defines in a downward manner, on a lower end of the after heater, an intermediate space between the after heater and a wall of the housing.

2. 发明公开

EP2609235A1 EDDY CURRENT THICKNESS MEASUREMENT APPARATUS 审中-公开
标题翻译：用于测量厚度涡流
公开(公告)号：EP2609235A1
公开(公告)日：2013-07-03
申请号：EP11746061.8
申请日：2011-07-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： ROSEN, Gary, J. , SINCLAIR, Frank , SOSKOV, Alexander , BUFF, James, S.
IPC分类号： C30B11/00 , C30B15/20 , C30B35/00 , C30B15/00 , C30B29/06
CPC分类号： C30B11/00 , B22D11/1206 , B22D11/143 , C30B15/00 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/406 , C30B29/64 , C30B35/00 , G01B7/105 , G01B7/107 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068 , Y10T117/1088
摘要： A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top the melt.

3. 发明授权

EP1538242B1 HEATER FOR CRYSTAL FORMATION, APPARATUS FOR FORMING CRYSTAL AND METHOD FOR FORMING CRYSTAL 有权
标题翻译：加热器用于拉晶晶体生长和晶体提拉法装置。
公开(公告)号：EP1538242B1
公开(公告)日：2012-08-08
申请号：EP03795314.8
申请日：2003-09-08
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SONOKAWA, Susumu, Shin-Etsu Handotai Co., Ltd , HOSHI, Ryoji, Shin-Etsu Handotai Co., Ltd. , SATO, Wataru, Shin-Etsu Handotai Co., Ltd. , OHTA, Tomohiko, Shin-Etsu Handotai Co., Ltd.
IPC分类号： C30B15/14 , C30B35/00 , C30B15/30 , C30B30/04
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heater for crystal formation provided with at least a terminal portion supplied with an electric current and a heating unit using resistance heating. The heater surrounds a crucible containing a raw material melt, and is used for crystal formation by a Czochralski method. The heater characterized by having a uniform heating distribution for the raw material melt after deformed in use for crystal formation. Consequently, the invention solves the conventional problem that a deformed heating unit of a heater used in formation of crystal causes a nonuniform temperature distribution in the raw material melt, which hampers formation of monocrystal resulting in unstable quality of the crystal.

4. 发明公开

EP2251462A3 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译：装置和用于制造单晶半导体单晶锭的方法和
公开(公告)号：EP2251462A3
公开(公告)日：2011-10-12
申请号：EP10009188.3
申请日：2002-09-27
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： Shiraishi, Yutaka , Tomioka, Jyunsuke , Okumura, Takuji , Hanamot, Tadayuki , Komatsu, Takehiro , Morimoto, Shigeo
IPC分类号： C30B15/20 , C30B29/06 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

5. 发明授权

EP1867759B1 Manufacturing equipment for polysilicon ingot 有权
标题翻译：对于Polysiliciumblöcke生产厂
公开(公告)号：EP1867759B1
公开(公告)日：2011-05-18
申请号：EP07252406.9
申请日：2007-06-13
申请人： Cho, Young Sang , Kim, Young Jo
发明人： Cho, Young Sang , Kim, Young Jo
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B11/002 , C30B11/007 , C30B29/06 , Y10T117/10 , Y10T117/1016 , Y10T117/102 , Y10T117/1024 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

6. 发明公开

EP2117036A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUMMENTS UND HALBLEITERBAUELEMENT
公开(公告)号：EP2117036A1
公开(公告)日：2009-11-11
申请号：EP08792583.0
申请日：2008-08-21
申请人： Sumitomo Electric Industries, Ltd.
发明人： FUJIKAWA, Kazuhiro , HARADA, Shin , NAMIKAWA, Yasuo , MASUDA, Takeyoshi
IPC分类号： H01L21/265 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/67109 , H01L29/45 , H01L29/66068 , Y10T117/1068 , Y10T117/1088
摘要： The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface roughening of the wafer in the heat treatment step and a semiconductor device in which the worsening of the property caused by the surface roughening is suppressed. The method of producing a MOSFET as a semiconductor device is provided with a step of preparing a wafer 3 made of silicon carbide and an activation annealing step that performs activation annealing by heating the wafer 3. In the activation annealing step, the wafer 3 is heated in an atmosphere containing a vapor of silicon carbide generated from the SiC piece 61, which is a generating source other than the wafer 3.
摘要翻译：本发明提供了一种半导体器件的制造方法，该半导体器件能够通过充分抑制在热处理工序中的晶片的表面粗糙化，以及半导体器件，能够抑制由于晶片的表面粗糙而导致的性能恶化，造成表面粗糙度受到抑制。制造作为半导体器件的MOSFET的方法具有制备由碳化硅制成的晶片3的步骤和通过加热晶片3进行活化退火的活化退火步骤。在活化退火步骤中，将晶片3加热在包含由除了晶片3之外的发生源的SiC片61产生的碳化硅蒸气的气氛中。

7. 发明公开

EP1813700A4 APPARATUS FOR CRYSTAL PRODUCTION 有权
标题翻译：器具，用于产生CRYSTAL
公开(公告)号：EP1813700A4
公开(公告)日：2009-04-22
申请号：EP05806692
申请日：2005-11-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SASAURA MASAHIRO , KOHDA HIROKI , FUJIURA KAZUO
IPC分类号： C30B11/00 , C30B29/30 , G02F1/315 , H01L41/187 , H01L41/39 , H01L41/41
CPC分类号： C30B29/30 , C30B11/002 , C30B11/003 , C30B29/32 , Y10T117/10 , Y10T117/1016 , Y10T117/1068 , Y10T117/1088
摘要： A temperature distribution around seed crystals is locally controlled to grow high-quality crystals under optimal temperature conditions in a satisfactory yield. In the apparatus for crystal production, seed crystals (14) are disposed in a crucible (11) held in an oven and a raw material (12) packed in the crucible (11) is heated and liquefied. This raw material (12) is gradually cooled from a lower part toward an upper part thereof to thereby grow crystals. The apparatus is equipped with a temperature controller for locally cooling or heating a part around the seed crystals (14). The temperature controller controls temperatures with a cap (17) of a hollow structure attached to the outside of the crucible (11) and based on the regulation of the flow rate of a refrigerant flowing in the hollow part.

8. 发明公开

EP1857574A3 Vorrichtung und Verfahren zur Herstellung von kristallinen Materialien 有权
标题翻译：的设备和方法生产结晶材料的
公开(公告)号：EP1857574A3
公开(公告)日：2007-12-05
申请号：EP07104930.8
申请日：2007-03-26
申请人： Schott AG
发明人： Müller, Matthias , Finkbeiner, Markus , Sahr, Uwe , Schwirtlich, Ingo , Clauss, Michael
IPC分类号： C30B11/00
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Herstellung von ein- oder multikristallinen Materialien nach dem Vertical-Gradiant-Freeze-Verfahren, insbesondere von Silizium für Anwendungen in der Photovoltaik.
Erfindungsgemäß wird ein geringer Verschnitt dadurch erzielt, dass der Querschnitt des Tiegels (2,4) vieleckig, insbesondere rechteckförmig oder quadratisch ist.
Um den Umfang des Tiegels herum ist ein flächiges Heizelement (7), insbesondere ein Mantelheizer, vorgesehen, das ein inhomogenes Temperaturprofil erzeugt. Dieses entspricht dem Temperaturgradienten, der im Zentrum des Tiegels ausgebildet ist. Die Heizleistung des flächigen Heizelements nimmt von dem oberen Ende zu dem unteren Ende des Tiegels hin ab. Das flächige Heizelement (7) besteht aus einer Mehrzahl von parallelen Heizstegen, die sich mäanderförmig vertikal oder horizontal erstrecken. Die Heizleistung der Stege wird durch Variation des Leiterquerschnittes eingestellt. Zur Vermeidung einer örtlichen Überhitzung an Eckbereichen des Tiegels sind an Umkehrbereichen des mäanderförmigen Verlaufs der Stege Querschnittsverengungen vorgesehen.
Das flächige Heizelement kann aus einer Mehrzahl von miteinander verbundenen Einzelsegmenten ausgebildet sein.

9. 发明公开

EP1857574A2 Vorrichtung und Verfahren zur Herstellung von ein- oder multikristallinen Materialien, insbesondere von multikristallinem Silizium 有权
标题翻译： Vorrichtung und Verfahren zur Herstellung von kristallinen Materialien
公开(公告)号：EP1857574A2
公开(公告)日：2007-11-21
申请号：EP07104930.8
申请日：2007-03-26
申请人： Schott AG
发明人： Müller, Matthias , Finkbeiner, Markus , Sahr, Uwe , Schwirtlich, Ingo , Clauss, Michael
IPC分类号： C30B11/00
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Herstellung von ein- oder multikristallinen Materialien nach dem Vertical-Gradiant-Freeze-Verfahren, insbesondere von Silizium für Anwendungen in der Photovoltaik.
Erfindungsgemäß wird ein geringer Verschnitt dadurch erzielt, dass der Querschnitt des Tiegels vieleckig, insbesondere rechteckformig oder quadratisch ist.
Um den Umfang des Tiegels herum ist ein flächiges Heizelement, insbesondere ein Mantelheizer, vorgesehen, das ein inhomogenes Temperaturprofil erzeugt. Dieses entspricht dem Temperaturgradienten, der im Zentrum des Tiegels ausgebildet ist. Die Heizleistung des flächigen Heizelements nimmt von dem oberen Ende zu dem unteren Ende des Tiegels hin ab. Das flächige Heizelement besteht aus einer Mehrzahl von parallelen Heizstegen, die sich mäanderförmig vertikal oder horizontal erstrecken. Die Heizleistung der Stege wird durch Variation des Leiterquerschnittes eingestellt. Zur Vermeidung einer örtlichen Überhitzung an Eckbereichen des Tiegels sind an Umkehrbereichen des mäanderförmigen Verlaufs der Stege Querschnittsverengungen vorgesehen.
Das flächige Heizelement kann aus einer Mehrzahl von miteinander verbundenen Einzelsegmenten ausgebildet sein.
摘要翻译：用于通过垂直梯度冷冻法生产单晶或多晶硅的结晶装置包括具有上端和下端的稳定的坩埚（2）和用于熔化硅并显示套管加热器的加热装置（7 ）用于排除垂直于纵向方向的热流。设备被设计成在坩埚中沿纵向形成温度梯度。坩埚呈现矩形或方形截面。加热器包括布置在坩埚的侧表面处的加热元件。用于通过垂直梯度冷冻法生产单晶或多晶硅的结晶装置包括具有上端和下端的稳定的坩埚（2）和用于熔化硅并显示套管加热器的加热装置（7 ）用于排除垂直于纵向方向的热流。设备被设计成在坩埚中沿纵向形成温度梯度。坩埚呈现矩形或方形截面。加热器包括布置在坩埚的侧表面处的加热元件。套管加热器形成加热区，其显示为使得输送的热输出从上端向下端减小，以便保持温度梯度。夹套加热器的纵向热输出量相应于坩埚中心的温度梯度而减小。护套加热器设计用于保持垂直于纵向方向的多个偶数等温线。夹套加热器的外轮廓形成对应于坩埚的外轮廓，使得加热器和坩埚之间的距离保持恒定。加热元件在其纵向或垂直方向上表现出曲折形状的过程。矩形条彼此等距并平行。棒的导体横截面在对角线方向上的曲折形状线圈的相反区域处收缩，使得该部分可能在相应的反向区域之前或之后被分配给棒。导体横截面的收缩通过与分布式导体横截面对角布置的条形材料中和/或中的多个穿孔或凹陷形成在相反的区域。沿纵向垂直延伸的加热元件形成为矩形棒，其导体横截面以连续或离散步骤从上端向下端增加。棒的导体横截面呈现多个段，通过连接元件以材料配合可解决连接在一起。在坩埚壁和夹套加热器之间提供非绝热。包括用于基于垂直梯度冻结法生产单晶或多晶硅的方法的独立权利要求。

10. 发明公开

EP1440187A2 POWDER METALLURGY TUNGSTEN CRUCIBLE FOR ALUMINUM NITRIDE CRYSTAL GROWTH 有权
标题翻译：粉末冶金用钨坩埚用于氮化铝晶体生长
公开(公告)号：EP1440187A2
公开(公告)日：2004-07-28
申请号：EP02806723.9
申请日：2002-09-20
申请人： Crystal Is, Inc.
发明人： SCHOWALTER, Leo, J. , SLACK, Glen, A.
IPC分类号： C30B15/10
CPC分类号： C30B23/00 , C30B11/002 , C30B23/066 , C30B29/403 , Y10T117/108 , Y10T117/1084 , Y10T117/1088
摘要： A crucible (10) for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal (28) growth cavity. The crucible includes a plurality of tungsten grains and a wall thickness of at least 1.5 times the average tungsten grain size (26). In particular embodiments, the crucible includes first and second layers of tungsten grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be machined from a bar, plate, or billet of powder metallurgy tungsten.
摘要翻译：提供用于生长III族氮化物（例如氮化铝）单晶的坩埚（10）。坩埚包括限定内部晶体（28）生长腔的细长壁结构。坩埚包括多个钨颗粒，并且壁厚至少为平均钨颗粒尺寸（26）的1.5倍。在特定实施例中，坩埚包括钨晶粒的第一和第二层，第一层包括形成其内表面的晶粒并且第二层与第一层叠置。坩埚可以由粉末冶金钨的棒材，板材或坯料加工而成。

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