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1. 发明公开

EP4386117A2 SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELD 审中-实审
公开(公告)号：EP4386117A2
公开(公告)日：2024-06-19
申请号：EP24165596.8
申请日：2020-12-10
申请人： GlobalWafers Co., Ltd.
发明人： RYU, JaeWoo , JI, JunHwan , YOON, WooJin , PHILLIPS, Richard , HUDSON, Carissima Marie
IPC分类号： C30B30/04
CPC分类号： C30B29/06 , C30B15/305 , C30B30/04 , C30B15/10
摘要： A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

2. 发明公开

EP4330450A1 METHODS FOR PRODUCING SILICON INGOTS BY HORIZONTAL MAGNETIC FIELD CZOCHRALSKI 审中-实审
公开(公告)号：EP4330450A1
公开(公告)日：2024-03-06
申请号：EP22724540.4
申请日：2022-04-27
申请人： GlobalWafers Co., Ltd.
发明人： RYU, JaeWoo , DAGGOLU, Parthiv , BASAK, Soubir , ZHANG, Nan
IPC分类号： C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04

3. 发明授权

EP2011905B1 METHOD FOR MEASURING DISTANCE BETWEEN REFERENCE REFLECTOR AND MELT SURFACE 有权转让
标题翻译：方法用于测量距离之间的参考反射器和熔体表面
公开(公告)号：EP2011905B1
公开(公告)日：2016-12-21
申请号：EP07707766.7
申请日：2007-01-31
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： URANO, Masahiko , FUSEGAWA, Izumi
IPC分类号： C30B29/06 , C30B15/26 , C30B30/04 , C30B15/30
CPC分类号： C30B15/305 , C30B15/26 , C30B30/04

4. 发明公开

EP2824222A1 Silicon single crystal and method for manufacture thereof 审中-公开
标题翻译： Siliciumeinkristall和Herstellungsverfahrendafür
公开(公告)号：EP2824222A1
公开(公告)日：2015-01-14
申请号：EP14176279.9
申请日：2014-07-09
申请人： GlobalWafers Japan Co., Ltd.
发明人： Nagai, Yuta , Nakagawa, Satoko , Kashima, Kazuhiko
IPC分类号： C30B15/20 , C30B15/30 , C30B27/02 , C30B29/06 , C30B30/04
CPC分类号： C30B15/203 , C30B15/20 , C30B15/22 , C30B15/30 , C30B15/305 , C30B29/06 , H01L21/02381 , H01L29/16 , H01L29/7393
摘要： A silicon single crystal manufacturing method includes:
applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0 × 10 15 atoms/cm 3 as a raw material; rotating the crucible at 5.0 rpm or less; allowing inert gas to flow at rate A (m/sec) of formula (1) at a position 20-50% of Y above the melt surface; controlling the rate A within the range of 0.2 to 5, 000/d (m/sec) (d: crystal diameter (mm));
and reducing the total power of side and bottom heaters by 3 to 30% and the side heater power by 5 to 45% until the solidified fraction reaches 30%. A = Q ⋅ 760 1000 ⋅ 60 ⋅ P ⋅ α / π ⋅ X ⋅ Y ⋅ 10 6
Q: Inert gas volumetric flow rate (L/min)
P: Pressure (Torr) in furnace
X: Radiation shield opening diameter
Y: Distance (mm) from raw material melt surface to radiation shield lower end
α : Correction coefficient
摘要翻译：硅单晶制造方法包括：以碳浓度为1.0×10 15原子/ cm 3以下的多晶硅熔体作为原料施加横向磁场; 使坩埚以5.0rpm或更小的速度旋转; 允许惰性气体在熔体表面上方的20-50％的位置以式（1）的速率A（m / sec）流动; 控制速度A在0.2〜5000 / d（m / sec）（d：晶体直径（mm））的范围内; 并将侧加热器和底部加热器的总功率降低3至30％，侧加热器功率降低5至45％，直到固化部分达到30％。 A = Q <760 1000 <60

5. 发明公开

EP2546392A1 Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall 有权
标题翻译：环形电阻加热器，用于向生长的单晶供给热量
公开(公告)号：EP2546392A1
公开(公告)日：2013-01-16
申请号：EP12174541.8
申请日：2012-07-02
申请人： Siltronic AG
发明人： Knerer, Dieter , Schachinger, Werner
IPC分类号： C30B15/14 , C30B30/04 , C30B35/00
CPC分类号： C30B15/14 , C30B30/04 , C30B35/00 , H05B3/40 , Y10T117/1068
摘要： Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall, umfassend einen oberen und einen unteren Ring, die angrenzend an einen Ringspalt des unteren Rings mittels einer Schleife elektrisch leitend verbunden sind, so dass die Fließrichtung von elektrischem Strom, der durch die Ringe geleitet wird, in den Ringen entgegengesetzt ist; Verbindungselemente, die den oberen und den unteren Ring auf Abstand zusammenhalten; und
Stromzuführungen zum Leiten von elektrischem Strom durch den oberen und den unteren Ring.
摘要翻译：环形电阻加热器包括：上环（1）和下环（2），其连接到所述下环邻近于环形设计间隙（3）通过在导电环（4）检查没有电流的流动方向通过在环中的相反方向的引导环; 连接哪个保持上和下环一起以一定距离，该距离为2-150毫米元件; 和电源线（11），用于通过上部和下部环传导电流。

6. 发明公开

EP2262932A1 PROCEDE DE CRISTALLOGENESE D'UN MATERIAU ELECTRIQUEMENT CONDUCTEUR A L'ETAT FONDU 审中-公开
标题翻译：维也纳ZURKGENZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZ
公开(公告)号：EP2262932A1
公开(公告)日：2010-12-22
申请号：EP09715571.7
申请日：2009-02-27
申请人： Centre National de la Recherche Scientifique (CNRS) , Institut Polytechnique de Grenoble
发明人： DUFFAR, Thierry , VIAN, Gilbert
IPC分类号： C30B11/00 , C30B29/40 , C30B30/04
CPC分类号： C30B11/007 , C30B11/003 , C30B29/40 , C30B30/04 , Y10T117/1024 , Y10T117/1092
摘要： The invention relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of said material in a crucible (1), that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; said method being characterised in that the electromagnetic kneading is obtained by applying an alternating magnetic field. The invention also relates to a device for implementing said method.
摘要翻译：本发明涉及一种在熔融状态下导电的材料的结晶生成方法，该方法是通过从坩埚中的材料的熔融物质中拉出，其包括：逐渐使熔融材料温度降低，使得液体形成固体界面; 控制材料的液 - 固界面的平整度; 在凝固之前和期间对熔融材料进行电磁捏合; 该方法包括通过施加交变磁场获得电磁捏合。本公开还涉及一种用于实现该方法的设备。

7. 发明公开

EP1908861A1 SILICON SINGLE CRYSTAL PULLING APPARATUS AND METHOD THEREOF 审中-公开
标题翻译： VORRICHTUNG UND VEFAHREN ZUM ZIEHEN VON SILICIUMEINKRISTALLEN
公开(公告)号：EP1908861A1
公开(公告)日：2008-04-09
申请号：EP05767033.3
申请日：2005-07-27
申请人： SUMCO Corporation
发明人： FU, Senlin, c/o SUMCO CORPORATION , ONO, Naoki, c/o SUMCO CORPORATION
IPC分类号： C30B29/06 , C30B30/04
CPC分类号： C30B29/06 , C30B15/305 , Y10T117/1072
摘要： A quartz crucible which stores a silicon melt is rotated at a predetermined rotation speed, and a silicon single crystal ingot pulled from the melt is rotated at a predetermined rotation speed. A first coil and a second coil are installed with a predetermined spacing in between such that a center of each of the coils corresponds to a rotation center of the crucible. A magnetic field is generated by energizing electric currents in the first and second coils in the same direction. The first coil is installed outside the chamber and the second coil is installed inside the chamber. A center position of the predetermined spacing between the first coil and the second coil is controlled at the same or a lower level as the surface of the silicon melt such that a distance of the center position from the surface of the silicon melt is 0 mm or more and 10000 mm or less.
摘要翻译：存储硅熔体的石英坩埚以预定旋转速度旋转，并且从熔体拉出的硅单晶锭以预定转速旋转。第一线圈和第二线圈之间以预定的间隔安装，使得每个线圈的中心对应于坩埚的旋转中心。通过在相同方向上激励第一和第二线圈中的电流来产生磁场。第一线圈安装在腔室外部，第二线圈安装在腔室内。将第一线圈和第二线圈之间的预定间隔的中心位置控制在与硅熔体的表面相同或更低的水平处，使得中心位置与硅熔体的表面的距离为0mm或多于10000毫米或更小。

8. 发明公开

EP1793007A1 Method for producing unidirectionally solidified hydrogen storage alloy 有权
标题翻译：维尔法赫恩·赫斯特伦·艾伦·赫里奇特
公开(公告)号：EP1793007A1
公开(公告)日：2007-06-06
申请号：EP06025041.2
申请日：2006-12-04
申请人： THE JAPAN STEEL WORKS, LTD.
发明人： Ito, Hideaki , Takahashi, Toshio , Yamada, Hitohisa , Kabutomori, Toshiki
IPC分类号： C22C14/00 , C01B3/00 , C22B9/00 , C22B9/16 , C22C1/00 , C30B11/00 , C30B13/00 , C30B30/04 , C30B35/00 , H01M4/02 , C30B28/00
CPC分类号： C30B29/52 , B22D27/045 , C01B3/0031 , C01P2002/76 , C22C1/00 , C22C27/025 , C30B21/02 , F17C11/005 , H01M4/383 , H01M8/04208 , H01M8/065 , Y02E60/321 , Y02E60/327
摘要： To produce a hydrogen storage alloy by melting a hydrogen storage alloy having a body-centered cubic crystal structure without using a refractory crucible and solidifying a molten alloy by a unidirectional solidification process. The unidirectional solidification is carried out by a cold crucible induction melting method at a moving speed of a solid-liquid interface in the range of 10 to 200 mm/hr by using a water-cooled metal crucible in a vacuum or an inert gas atmosphere.
摘要翻译：通过熔化具有体心立方晶体结构的储氢合金而不使用耐火坩埚并通过单向凝固工艺固化熔融合金来制造储氢合金。通过在真空或惰性气体气氛中使用水冷金属坩埚，通过冷坩埚感应熔融法以固体 - 液体界面的移动速度在10至200mm / hr的范围内进行单向凝固。

9. 发明授权

EP0758689B1 Verfahren und Vorrichtung zur Herstellung von Einkristallen 失效
标题翻译：生产单晶的方法和设备
公开(公告)号：EP0758689B1
公开(公告)日：1999-11-10
申请号：EP96112765.1
申请日：1996-08-08
申请人： Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft
发明人： Tomzig, Erich, Dr. , Zulehner, Werner, Dr. , von Ammon, Wilfried, Dr. , Gelfgat, Yu M., Prof. Dr. , Gorbunov, L.A., Dr.
IPC分类号： C30B15/00 , C30B30/04
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032

10. 发明公开

EP4073295A1 SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELD 有权
公开(公告)号：EP4073295A1
公开(公告)日：2022-10-19
申请号：EP20838749.8
申请日：2020-12-10
申请人： GlobalWafers Co., Ltd.
发明人： RYU, JaeWoo , JI, JunHwan , YOON, WooJin , PHILLIPS, Richard , HUDSON, Carissima Marie
IPC分类号： C30B15/10 , C30B15/30 , C30B29/06 , C30B30/04

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