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    • 5. 发明公开
    • A method and an apparatus for growing a silicon single crystal from melt
    • Verfahren und Vorrichtung zurZüchtungeines Siliciumeinzelkristalls durch Schmelzung
    • EP2270264A1
    • 2011-01-05
    • EP09006477.5
    • 2009-05-13
    • Siltronic AG
    • Filar, Piotr, Dr.
    • C30B29/06C30B15/30C30B15/14
    • C30B15/14C30B13/28C30B15/00C30B15/10C30B15/203C30B15/206C30B15/305C30B21/06C30B27/02C30B28/10C30B29/06C30B30/04Y10T117/1008Y10T117/1068
    • The invention disclosure relates to a method and an apparatus for growing a silicon single crystal from a melt. The method comprises providing the melt in a crucible;
      imposing a horizontal magnetic field on the melt having a magnetic induction B at a field center C;
      directing a gas between the silicon single crystal and a heat shield to a melt free surface, and
      controlling the gas to flow over a region of the melt free surface which extends in a direction substantially perpendicular to the magnetic induction B.
      The apparatus comprises a crucible for holding the melt; a heat shield surrounding the silicon single crystal, the heat shield having a lower end which is connected to a bottom cover facing a melt free surface and having a non-axisymmetric shape with respect to a crucible axis M, such that a gas which is directed between the silicon single crystal and the heat shield to the melt free surface is forced by the bottom cover to flow over a region of the melt free surface which extends in a direction substantially perpendicular to the magnetic induction B.
    • 本发明公开内容涉及从熔体生长硅单晶的方法和装置。 该方法包括在坩埚中提供熔体; 在场中心C具有磁感应B的熔体上施加水平磁场; 将硅单晶和隔热层之间的气体引导到无熔融表面,并且控制气体在基本上垂直于磁感应B的方向上延伸的无熔融表面的区域上流动。该设备包括坩埚 用于保持熔体; 围绕硅单晶的隔热罩,所述隔热罩具有下端,所述下端连接到面向无熔融表面并且相对于坩埚轴线M具有非轴对称形状的底盖,使得指向的气体 在硅单晶和与无熔体表面之间的隔热层之间被底盖强制流过在基本上垂直于磁感应B的方向延伸的无熔体表面的区域。