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1. 发明授权

EP2478135B1 METHOD FOR CRYSTALLIZATION OF SILICON 有权转让
标题翻译：硅的结晶方法
公开(公告)号：EP2478135B1
公开(公告)日：2017-11-15
申请号：EP09783158.0
申请日：2009-09-18
申请人： ABB AB
发明人： ERIKSSON, Jan-Erik , HJORTSTAM, Olof , SAND, Ulf
IPC分类号： C30B11/00 , C30B29/06 , C30B35/00 , B22D27/04 , F27B14/14 , H05B6/36 , H05B6/44 , B22D27/02 , C03B9/41 , C30B13/24 , C30B13/30 , C30B15/30 , F27B14/20 , F27D27/00
CPC分类号： C30B13/30 , B22D27/02 , B22D27/045 , C03B9/41 , C30B11/00 , C30B11/002 , C30B11/003 , C30B13/24 , C30B15/30 , C30B29/06 , C30B35/00 , F27B14/14 , F27B14/20 , F27D27/00 , Y10T117/1008

2. 发明公开

EP2876190A1 SiC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR 有权转让
标题翻译： SIC-EINKRISTALLWAFER UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2876190A1
公开(公告)日：2015-05-27
申请号：EP13820560.4
申请日：2013-05-08
申请人： Toyota Jidosha Kabushiki Kaisha , Nippon Steel & Sumitomo Metal Corporation
发明人： KUSUNOKI, Kazuhiko , OKADA, Nobuhiro , KADO Motohisa , DAIKOKU Hironori , SAKAMOTO Hidemitsu
IPC分类号： C30B29/36 , C30B19/10
CPC分类号： C30B19/10 , C30B9/06 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/068 , C30B29/36 , Y10T117/1008 , Y10T428/21 , Y10T428/24488
摘要： Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, said growth crystal having a recessed crystal growth surface and not including inclusions.
摘要翻译：提供：抑制夹杂物的产生的高品质SiC单晶锭; 以及所述SiC单晶锭的制造方法。本发明涉及包括晶种基板和使用溶液法生长的SiC生长晶体并使用晶种基板作为其起源的SiC单晶锭，所述生长晶体具有凹陷的晶体生长表面并且不包括夹杂物。

3. 发明公开

EP2609235A1 EDDY CURRENT THICKNESS MEASUREMENT APPARATUS 审中-公开
标题翻译：用于测量厚度涡流
公开(公告)号：EP2609235A1
公开(公告)日：2013-07-03
申请号：EP11746061.8
申请日：2011-07-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： ROSEN, Gary, J. , SINCLAIR, Frank , SOSKOV, Alexander , BUFF, James, S.
IPC分类号： C30B11/00 , C30B15/20 , C30B35/00 , C30B15/00 , C30B29/06
CPC分类号： C30B11/00 , B22D11/1206 , B22D11/143 , C30B15/00 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/406 , C30B29/64 , C30B35/00 , G01B7/105 , G01B7/107 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068 , Y10T117/1088
摘要： A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top the melt.

4. 发明公开

EP2478135A1 APPARATUS AND METHOD FOR CRYSTALLIZATION OF SILICON 有权转让
标题翻译： VERFAHREN ZUR KRISTALLISIERUNG VON SILIZIUM
公开(公告)号：EP2478135A1
公开(公告)日：2012-07-25
申请号：EP09783158.0
申请日：2009-09-18
申请人： ABB AB
发明人： ERIKSSON, Jan-Erik , HJORTSTAM, Olof , SAND, Ulf
IPC分类号： C30B11/00 , C30B29/06 , C30B35/00 , B22D27/04 , F27B14/14 , H05B6/36 , H05B6/44
CPC分类号： C30B13/30 , B22D27/02 , B22D27/045 , C03B9/41 , C30B11/00 , C30B11/002 , C30B11/003 , C30B13/24 , C30B15/30 , C30B29/06 , C30B35/00 , F27B14/14 , F27B14/20 , F27D27/00 , Y10T117/1008
摘要： An apparatus for crystallization of silicon comprises a crucible (11) for containing silicon, a heating and heat dissipating arrangement (12) provided for melting the silicon contained in the crucible and for subsequently solidifying the molten silicon, and an electromagnetic stirring device (13) provided for stirring the molten silicon in the crucible during the solidification of the molten silicon. A control arrangement (14) is provided for controlling the heating and heat dissipating arrangement to solidify the molten silicon at a specified solidification rate and for controlling the electromagnetic stirring device to stir the molten silicon in response to the specified solidification rate of the molten silicon such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value.
摘要翻译：一种用于硅结晶的装置包括：用于包含硅的坩埚，用于熔化坩埚中所含的硅并用于随后固化熔融硅的加热和散热装置，以及用于搅拌坩埚中的熔融硅的电磁搅拌装置在熔融硅的凝固过程中。提供了一种控制装置，用于控制加热和散热装置以固定熔融硅的特定凝固速率，并且控制电磁搅拌装置响应于熔融硅的规定凝固速率来搅拌熔融硅，的熔融硅的速度和指定的凝固速率高于第一阈值。

5. 发明公开

EP2270264A1 A method and an apparatus for growing a silicon single crystal from melt 有权
标题翻译： Verfahren und Vorrichtung zurZüchtungeines Siliciumeinzelkristalls durch Schmelzung
公开(公告)号：EP2270264A1
公开(公告)日：2011-01-05
申请号：EP09006477.5
申请日：2009-05-13
申请人： Siltronic AG
发明人： Filar, Piotr, Dr.
IPC分类号： C30B29/06 , C30B15/30 , C30B15/14
CPC分类号： C30B15/14 , C30B13/28 , C30B15/00 , C30B15/10 , C30B15/203 , C30B15/206 , C30B15/305 , C30B21/06 , C30B27/02 , C30B28/10 , C30B29/06 , C30B30/04 , Y10T117/1008 , Y10T117/1068
摘要： The invention disclosure relates to a method and an apparatus for growing a silicon single crystal from a melt. The method comprises providing the melt in a crucible;
imposing a horizontal magnetic field on the melt having a magnetic induction B at a field center C;
directing a gas between the silicon single crystal and a heat shield to a melt free surface, and
controlling the gas to flow over a region of the melt free surface which extends in a direction substantially perpendicular to the magnetic induction B.
The apparatus comprises a crucible for holding the melt; a heat shield surrounding the silicon single crystal, the heat shield having a lower end which is connected to a bottom cover facing a melt free surface and having a non-axisymmetric shape with respect to a crucible axis M, such that a gas which is directed between the silicon single crystal and the heat shield to the melt free surface is forced by the bottom cover to flow over a region of the melt free surface which extends in a direction substantially perpendicular to the magnetic induction B.
摘要翻译：本发明公开内容涉及从熔体生长硅单晶的方法和装置。该方法包括在坩埚中提供熔体; 在场中心C具有磁感应B的熔体上施加水平磁场; 将硅单晶和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应B的方向上延伸的无熔融表面的区域上流动。该设备包括坩埚用于保持熔体; 围绕硅单晶的隔热罩，所述隔热罩具有下端，所述下端连接到面向无熔融表面并且相对于坩埚轴线M具有非轴对称形状的底盖，使得指向的气体在硅单晶和与无熔体表面之间的隔热层之间被底盖强制流过在基本上垂直于磁感应B的方向延伸的无熔体表面的区域。

6. 发明授权

EP1184488B1 An apparatus for fabricating a III-V nitride film and a method for fabricating the same 有权
标题翻译：装置和方法用于制造III-V族氮化物膜
公开(公告)号：EP1184488B1
公开(公告)日：2010-12-15
申请号：EP01119823.1
申请日：2001-08-16
申请人： NGK Insulators, Ltd.
发明人： Shibata, Tomohiko , Asai, Keiichiro , Tanaka, Mitsuhiro
IPC分类号： C30B25/02 , C30B29/40
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1008

7. 发明公开

EP2077346A3 Method for measuring point defect distribution of silicon single crystal lingot 有权
标题翻译：用于确定硅单晶的点缺陷分布方法
公开(公告)号：EP2077346A3
公开(公告)日：2010-02-24
申请号：EP09001440.8
申请日：2003-10-17
申请人： SUMCO CORPORATION
发明人： Kurita, Kazunari , Furukawa, Jun
IPC分类号： C30B29/06 , G01N27/04
CPC分类号： C30B33/00 , C04B24/003 , C04B28/146 , C04B2111/00836 , C30B15/00 , C30B29/06 , Y10T117/1008 , C04B22/147 , C04B24/04 , C04B2103/69
摘要： A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be asymmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions [Pi] and [I] and the boundary between the regions [V] and [Pv] are respectively specified from the overlapped result.

8. 发明授权

EP1444390B1 APPARATUS AND METHOD FOR DIAMOND PRODUCTION 有权
标题翻译：用于钻石生产的装置和方法
公开(公告)号：EP1444390B1
公开(公告)日：2009-12-30
申请号：EP02797071.4
申请日：2002-11-07
申请人： CARNEGIE INSTITUTION OF WASHINGTON , THE UAB RESEARCH FOUNDATION
发明人： HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-shiue , VOHRA, Yogesh, K.
IPC分类号： C30B25/02 , C30B25/16 , C23C16/27 , C23C16/52 , C30B25/10
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

9. 发明公开

EP2038229A1 ARTIFICIAL QUARTZ MEMBER, PROCESS FOR PRODUCING THE SAME, AND OPTICAL ELEMENT COMPRISING THE SAME 有权转让
标题翻译：人造石英的组成部分，用于生产和光学元件，它包括
公开(公告)号：EP2038229A1
公开(公告)日：2009-03-25
申请号：EP07745533.5
申请日：2007-06-13
申请人： Tokyo Denpa Co., Ltd. , Asahi Glass Co., Ltd.
发明人： AGATA, Noriyuki , KIKUGAWA, Shinya , SHIMIZU, Yutaka , YOSHIDA, Kazumi , NISHIMOTO, Masatoshi
IPC分类号： C03C3/06 , C01B33/12
CPC分类号： C03C3/06 , C03C2201/02 , C03C2201/32 , C03C2201/50 , C30B7/10 , C30B29/18 , Y10T117/1008
摘要： An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 run or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

10. 发明公开

EP2016209A2 PROCESS FOR PRODUCING A III-N BULK CRYSTAL AND A FREE-STANDING III -N SUBSTRATE, AND III -N BULK CRYSTAL AND FREE-STANDING IH-N SUBSTRATE 有权
标题翻译：用于生产III-N音量晶体和独立式III-N衬底和III-N音量晶体和独立式III-N衬底
公开(公告)号：EP2016209A2
公开(公告)日：2009-01-21
申请号：EP07724886.2
申请日：2007-05-04
申请人： Freiberger Compound Materials GmbH
发明人： LEIBIGER, Gunnar , HABEL, Frank , EICHLER, Stefan
IPC分类号： C30B25/16 , C30B29/40
CPC分类号： C30B25/16 , C30B25/00 , C30B29/40 , C30B29/403 , Y10T117/1004 , Y10T117/1008
摘要： The invention describes a process for producing a III -N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III -N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.

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