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1. 发明公开

EP4442867A1 METHOD FOR FORMING MONOCRYSTALLINE DIAMOND FILM 审中-实审
公开(公告)号：EP4442867A1
公开(公告)日：2024-10-09
申请号：EP22901011.1
申请日：2022-10-31
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： QU Weifeng , IGAWA Shizuo , SUNAKAWA Ken
IPC分类号： C30B29/04 , C23C16/27 , C23C16/511 , C30B25/02 , C30B25/18 , H01L21/20
CPC分类号： H01L21/20 , C23C16/27 , C23C16/511 , C30B25/02 , C30B25/18 , C30B29/04
摘要： The present invention is a method for forming a monocrystalline diamond film on a monocrystalline silicon substrate. The method includes a first step of preparing a monocrystalline silicon substrate having a plane orientation of (100) or (111), a second step of performing an RTA treatment on the prepared monocrystalline silicon substrate in a carbon-containing atmosphere to form a 3C-SiC monocrystalline film on the surface of the monocrystalline silicon substrate, a third step of converting the 3C-SiC monocrystalline film into diamond nuclei by using a microwave plasma CVD method, in which a bias voltage is applied in a carbon-containing atmosphere, to form the diamond nuclei on the monocrystalline silicon substrate, and a fourth step of causing a monocrystalline diamond film to grow on the monocrystalline silicon substrate by using the microwave plasma CVD method in a carbon-containing atmosphere. By the above method, high density diamond nuclei are formed, and a method for forming a large area monocrystalline diamond film that exhibits excellent crystal orientation and has no grain boundary in the film is provided.

2. 发明公开

EP4425531A1 METHOD FOR MANUFACTURING BONDED SEMICONDUCTOR WAFER 审中-实审
公开(公告)号：EP4425531A1
公开(公告)日：2024-09-04
申请号：EP22886751.1
申请日：2022-10-14
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： ISHIZAKI, Junya
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L21/02 , H01L21/20
摘要： The present invention provides a method for manufacturing a bonded semiconductor wafer, the method includes manufacturing an epitaxial wafer by epitaxially growing a sacrificial layer and an epitaxial layer having a semiconductor functional layer on a starting substrate, forming a device isolation groove by a selective etching method so as to expose the sacrificial layer, forming a passivation film on at least an exposed surface of the sacrificial layer, producing a bonded substrate by bonding the epitaxial layer to a to-be-bonded substrate being transparent via a thermosetting bonding material, removing the passivation film of the bonded substrate by etching, and separating the starting substrate and the epitaxial layer by etching the sacrificial layer by supplying an etchant to the device isolation groove of the bonded substrate. This provides the method for manufacturing the bonded semiconductor wafer in which sacrificial layer etching is prevented from being inhibited by seeping of the bonding material to a device isolation groove in the method of manufacturing the bonded semiconductor wafer, in which the device isolation groove is formed in an epitaxial wafer, and the wafer is bonded to a to-be-bonded substrate via a flexible bonding material.

3. 发明公开

EP4411787A1 METHOD FOR SEPARATING BONDED WAFER 审中-实审
公开(公告)号：EP4411787A1
公开(公告)日：2024-08-07
申请号：EP22876187.0
申请日：2022-09-27
申请人： Shin-Etsu Handotai Co., Ltd. , SHIN-ETSU CHEMICAL CO., LTD.
发明人： ISHIZAKI, Junya , YAMADA, Masato , OGAWA, Yoshinori
IPC分类号： H01L21/02
CPC分类号： H01L21/02
摘要： The present invention is a method for separating a bonded wafer, the method comprises separating a support from a bonded wafer which comprises a device structure portion having two or more electrodes with different polarities on one side of an epitaxial functional layer, and the device structure portion being bonded to a support made of a foreign substrate using a curable bonding material, wherein, by irradiating the bonded wafer with a laser beam, the curable bonding material and/or at least a portion of the surface of the device structure portion that comes into contact with the curable bonding material absorb(s) the laser beam to decompose the curable bonding material and/or the surface of the device structure portion, and thus the device structure portion and the support are separated. As a result, it is provided a method for separating a bonded wafer with a high survival rate of device structure portion in the separation of a bonded wafer that is firmly bonded with a curable bonding material, as a bonded wafer, which has the device structure portion having two or more electrodes with different polarities on one surface of an epitaxial functional layer and the device structure portion is bonded to a support made of a foreign substrate with the curable bonding material.

4. 发明公开

EP4407657A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-实审
公开(公告)号：EP4407657A1
公开(公告)日：2024-07-31
申请号：EP22872620.4
申请日：2022-08-22
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KUBONO Ippei , HAGIMOTO Kazunori
IPC分类号： H01L21/20 , C30B25/18 , C30B29/38 , H01L21/205
CPC分类号： C30B29/38 , C30B25/18 , H01L21/2015 , H01L21/20
摘要： The present invention provides a nitride semiconductor substrate including a growth substrate, and a nitride semiconductor thin film formed on the growth substrate, in which the nitride semiconductor thin film includes an AlN layer formed on the growth substrate and a nitride semiconductor layer formed on the AlN layer, and an average concentration of Y (Yttrium) in the AlN layer is 1E15 atoms/cm3 or higher and 5E19 atoms/cm3 or lower. Thereby, provided is a nitride semiconductor substrate capable of improving the surface morphology of an AlN layer, thereby suppressing the generation of pits on the surface of a nitride semiconductor epitaxial wafer, and a method for manufacturing the nitride semiconductor substrate.

5. 发明公开

EP4394093A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-实审
公开(公告)号：EP4394093A1
公开(公告)日：2024-07-03
申请号：EP22861137.2
申请日：2022-08-09
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： HAGIMOTO, Kazunori
IPC分类号： C30B29/38 , C30B25/02 , H01L21/205
CPC分类号： C30B25/02 , C30B29/38 , H01L21/2015
摘要： The present invention provides a nitride semiconductor substrate in which a nitride semiconductor thin film is formed on a substrate for film formation made of single-crystal silicon, in which a silicon nitride film is formed on an peripheral portion of the substrate for film formation, an AlN film is formed on the substrate for film formation and on the silicon nitride film, and the nitride semiconductor thin film is formed on the AlN film. This provides: a nitride semiconductor substrate without a reaction mark or a polycrystal growth portion on an edge portion when an AlN layer is epitaxially grown on a silicon substrate, and a GaN or AlGaN layers are epitaxially grown on top of that; and a method for manufacturing the nitride semiconductor substrate.

6. 发明公开

EP4376053A1 BONDED WAFER AND METHOD FOR MANUFACTURING BONDED WAFER 审中-实审
公开(公告)号：EP4376053A1
公开(公告)日：2024-05-29
申请号：EP22845723.0
申请日：2022-06-20
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： ISHIZAKI Junya , AKIYAMA Tomohiro , FURUYA Shogo
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L21/02 , H01L21/20
摘要： The present invention is a bonded wafer, wherein an epitaxial wafer having a heterojunction structure, in which a material with a different thermal expansion coefficient is epitaxially laminated on a growth substrate, and a support substrate are bonded via a bonding material, wherein the bonding material has an average thickness of 0.01 um or more and 0.6 um or less. As a result, provided is a bonded wafer and a method for producing the same that improves the film thickness distribution of the bonding material caused by the warpage of the semiconductor epitaxial substrate and the warpage that changes with thermal changes when the warped semiconductor epitaxial substrate and the support substrate are bonded together using the bonding material

7. 发明公开

EP4358118A1 METHOD FOR FORMING THERMALLY OXIDIZED FILM OF SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4358118A1
公开(公告)日：2024-04-24
申请号：EP22824835.7
申请日：2022-06-06
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： OHTSUKI, Tsuyoshi , ABE, Tatsuo
IPC分类号： H01L21/31 , H01L21/316
CPC分类号： H01L21/31
摘要： The present invention provides a method for forming a thermal oxide film, comprising the steps of: a step of acquiring a first correlation between an amount of OH groups and thickness of the thermal oxide film by forming a thermal oxide film by thermal oxidation treatment under the same condition after preparing a plurality of semiconductor substrates having chemical oxide films formed by cleaning and having different amounts of OH groups; a step of acquiring a second correlation between an amount of OH groups and drying conditions by cleaning under the same cleaning condition followed by changed drying conditions to substrates and measuring amounts of OH groups; a step of acquiring a third correlation between drying condition and thickness of thermal oxide film by using the first correlation and the second correlation; a step of determining drying condition and thermal oxidation condition by using the third correlation; a step of cleaning the substrates; and a step of drying and a thermal oxide film formation after the cleaning step using the drying conditions and thermal oxidation treatment conditions determined in the drying and thermal oxidation treatment condition determination step. This provides a method for forming thermal oxide film in which a thermal oxide film can be formed with intended thickness with good reproducibility while without changing the composition of the cleaning chemical solution.

8. 发明公开

EP4321658A1 METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER 审中-实审
公开(公告)号：EP4321658A1
公开(公告)日：2024-02-14
申请号：EP22784449.5
申请日：2022-03-16
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： HAGIMOTO, Kazunori , ISHIZAKI, Junya , OHTSUKI, Tsuyoshi
IPC分类号： C30B25/18 , H01L21/205 , C30B29/38
摘要： The present invention relates to a method for producing a nitride semiconductor wafer by forming a nitride semiconductor film on a silicon single-crystal substrate, including the steps of forming the nitride semiconductor film on the silicon single-crystal substrate and irradiating the silicon single-crystal substrate with electron beams with an irradiation dose of 1×10 14 /cm 2 or more. Thus, provided is a method for producing a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single-crystal substrate, and in which a loss and a second harmonic characteristic due to the substrate are improved.

9. 发明公开

EP4321295A1 WAFER PROCESSING METHOD AND WAFER 审中-实审
公开(公告)号：EP4321295A1
公开(公告)日：2024-02-14
申请号：EP22784355.4
申请日：2022-02-21
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： YOSHIDA, Yasuki , TAGA, Ryo
IPC分类号： B24B7/17 , B24B37/08 , H01L21/304
摘要： The present invention is a method for processing a wafer including; surface-grinding front surface of the wafer and back surface opposite to the front surface with a grindstone having a size of 10000 or more and, double-side polishing both sides of the wafer that has been surface-ground so that removal on the back surface is 1/4 or less than that on the front surface. Thus, a method for processing a wafer capable of selectively roughening the back surface of a wafer and suppressing warpage of the wafer due to stress, and a wafer having a sufficiently roughened back surface and having a small warpage can be provided.

10. 发明公开

EP4307347A1 METHOD FOR CLEANING SILICON WAFER, METHOD FOR PRODUCING SILICON WAFER, AND SILICON WAFER 审中-实审
公开(公告)号：EP4307347A1
公开(公告)日：2024-01-17
申请号：EP22766793.8
申请日：2022-02-21
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： FUJII, Kota , ABE, Tatsuo
IPC分类号： H01L21/304 , H01L21/308
摘要： The present invention is a method of cleaning a silicon wafer in which the silicon wafer is roughened, including: forming an oxide film on the silicon wafer by SC1 cleaning, SC2 cleaning, or ozone water cleaning; cleaning the silicon wafer on which the oxide film is formed by using any one of: a diluted aqueous solution of ammonium hydroxide having an ammonium hydroxide concentration of 0.051 % by mass or less; or a diluted aqueous solution containing ammonium hydroxide and hydrogen peroxide water and having an ammonium hydroxide concentration of 0.051 % by mass or less and a hydrogen peroxide concentration of 0.2 % by mass or less, the hydrogen peroxide concentration being four times or less the ammonium hydroxide concentration, to roughen front and rear faces of the silicon wafer. Thus, a cleaning method capable of roughening the front and rear faces of a silicon wafer is provided.

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