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1. 发明公开

EP4202088A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER, AND NITRIDE SEMICONDUCTOR WAFER 审中-实审
公开(公告)号：EP4202088A1
公开(公告)日：2023-06-28
申请号：EP21857978.7
申请日：2021-04-08
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： TSUCHIYA, Keitaro , SHINOMIYA, Masaru , HAGIMOTO, Kazunori , KUBONO, Ippei
IPC分类号： C30B25/18 , H01L21/205 , C30B29/06 , C30B29/38
摘要： The present invention is a method for producing a nitride semiconductor wafer, in which a nitride semiconductor thin film is grown on a silicon single crystal substrate by vapor phase growth, including, by using a silicon single crystal substrate having a resistivity of 1000 Ω·cm or more, an oxygen concentration of less than 1×10 17 atoms/cm 3 and a thickness of 1000 um or more, growing the nitride semiconductor thin film on the silicon single crystal substrate by vapor phase growth. As a result, it is possible to provide a method for producing a nitride semiconductor wafer in which plastic deformation and warpage are suppressed even in the case of a high-resistivity, ultra-low oxygen concentration silicon single crystal substrate, which is promising as a support substrate for high frequency devices, is used.

2. 发明公开

EP4163424A1 SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：EP4163424A1
公开(公告)日：2023-04-12
申请号：EP21822039.0
申请日：2021-04-12
申请人： Shin-Etsu Chemical Co., Ltd. , Shin-Etsu Handotai Co., Ltd.
发明人： KUBOTA, Yoshihiro , KAWAHARA, Minoru , YAMADA, Masato
IPC分类号： C30B25/18 , H01L21/02 , H01L21/205 , C30B29/38 , C23C16/34
摘要： A substrate for group III nitride epitaxial growth and a method for producing the same are provided, which are capable of fabricating a high-quality group III nitride single crystal at low cost. The substrate for group III nitride epitaxial growth according to the present invention includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 µm and 1.5 um, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 um and 3.0 um, inclusive; and a seed crystal layer consisting of a single crystal of a group III nitride, the seed crystal layer being provided on an upper surface of the planarizing layer and having a thickness of between 0.1 µm and 1.5 µm, inclusive.

3. 发明公开

EP4160657A1 METHOD FOR FORMING THERMAL OXIDE FILM OF SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：EP4160657A1
公开(公告)日：2023-04-05
申请号：EP21813565.5
申请日：2021-03-10
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： OHTSUKI, Tsuyoshi , ABE, Tatsuo
IPC分类号： H01L21/304 , H01L21/31 , H01L21/316 , H01L21/66
摘要： The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film having a different constitution formed by cleaning, performing a thermal oxidization treatment under identical thermal oxidization treatment conditions to form a thermal oxide film, and determining a correlation between the constitution of the chemical oxide film and a thickness of the thermal oxide film in advance; a cleaning condition determination step of determining the constitution of the chemical oxide film based on the correlation obtained in the correlation acquisition step so that a thickness of a thermal oxide film to be formed on a semiconductor substrate is a predetermined thickness, and determining cleaning conditions for forming a chemical oxide film having the determined constitution of the chemical oxide film; a substrate cleaning step of cleaning the semiconductor substrate under the determined cleaning conditions; and a thermal oxide film formation step of performing a thermal oxidization treatment on the cleaned semiconductor substrate under conditions identical to the thermal oxidization treatment conditions in the correlation acquisition step to form a thermal oxide film on a surface of the semiconductor substrate. Consequently, a thermal oxide film is formed with the target film thickness with excellent reproducibility.

4. 发明公开

EP4134199A1 WAFER POLISHING METHOD AND POLISHING DEVICE 审中-实审
公开(公告)号：EP4134199A1
公开(公告)日：2023-02-15
申请号：EP21784449.7
申请日：2021-02-08
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： OSEKI, Masaaki , ABE, Tatsuo , SATO, Michito
IPC分类号： B24B1/00 , B24B37/00 , B24B49/04 , H01L21/304
摘要： The present invention is a method for polishing a wafer in order to correct a shape of a polished wafer subjected to polishing, by pressing the wafer to a polishing pad while continuously supplying a composition for polishing containing water to perform correction-polishing, the method including the steps of: measuring the shape of the polished wafer before performing the correction-polishing; determining, in accordance with the measured shape of the polished wafer, a kind and concentration of a surfactant to be contained in the composition for polishing; and performing the correction-polishing while supplying the composition for polishing adjusted on a basis of the determined kind and concentration of the surfactant. This provides a method and apparatus for polishing a wafer that make it possible to reduce, in the latter polishing step, a variation in the shape of the wafer that occurred in a preceding polishing step.

5. 发明公开

EP4131341A1 METHOD FOR CONTROLLING DONOR CONCENTRATION IN SILICON SINGLE CRYSTAL SUBSTRATE 审中-实审
公开(公告)号：EP4131341A1
公开(公告)日：2023-02-08
申请号：EP21779964.2
申请日：2021-02-09
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： TAKENO, Hiroshi
IPC分类号： H01L21/265 , H01L21/66
摘要： The present invention is a method for controlling a donor concentration in a silicon single crystal substrate in which an oxygen concentration and a carbon concentration in a silicon single crystal substrate whose donor concentration is to be controlled and which is prepared in a preparation step are adjusted based on an acquired correlation such that the donor concentration in the silicon single crystal substrate whose donor concentration is to be controlled reaches a target value after a second heat treatment step. This provides a method for controlling a donor concentration in a silicon single crystal substrate in such a manner to successfully reduce a variation in donor concentration attributable to silicon single crystal substrates and control the donor concentration with high precision.

6. 发明公开

EP4089720A1 EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER 审中-公开
公开(公告)号：EP4089720A1
公开(公告)日：2022-11-16
申请号：EP20911506.2
申请日：2020-11-24
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SUZUKI, Katsuyoshi , SUZUKI, Atsushi
IPC分类号： H01L21/205 , C30B29/06 , C23C16/02 , C23C16/24
摘要： The present invention is a method for manufacturing an epitaxial wafer by forming a single crystal silicon layer on a wafer containing a group IV element including silicon, the method including the steps of: removing a natural oxide film on a surface of the wafer containing the group IV element including silicon in an atmosphere containing hydrogen; forming an oxygen atomic layer by oxidizing the wafer after removing the natural oxide film; and forming a single crystal silicon by epitaxial growth on the surface of the wafer after forming the oxygen atomic layer, where a planar density of oxygen in the oxygen atomic layer is set to 4×10 14 atoms/cm 2 or less. This provides a method for manufacturing an epitaxial wafer having an epitaxial layer of good-quality single crystal silicon while also allowing the introduction of an oxygen atomic layer in an epitaxial layer stably and simply.

7. 发明公开

EP3955324A1 METHOD FOR MANUFACTURING ELECTRONIC DEVICE 审中-公开
公开(公告)号：EP3955324A1
公开(公告)日：2022-02-16
申请号：EP20787736.6
申请日：2020-03-16
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： ISHIZAKI, Jun-ya , FURUYA, Shogo , AKIYAMA, Tomohiro
IPC分类号： H01L31/18 , H01L31/0735 , H01L21/02 , H01L27/142
摘要： The present invention is a method for producing an electronic device having a drive circuit including a solar cell structure, the method including the steps of: obtaining a bonded wafer by bonding a first wafer having a plurality of independent solar cell structures including a compound semiconductor, the solar cell structures being formed on a starting substrate by epitaxial growth, and a second wafer having a plurality of independent drive circuits formed, so that the plurality of solar cell structures and the plurality of drive circuits are respectively superimposed; wiring the bonded wafer so that electric power can be supplied from the plurality of solar cell structures to the plurality of drive circuits respectively; and producing an electronic device having the drive circuit including the solar cell structure by dicing the bonded wafer. This provides a method for producing an electronic device including a drive circuit and a solar cell structure in one chip and having a suppressed production cost.

8. 发明授权

EP3136421B1 BONDED SOI WAFER MANUFACTURING METHOD 有权
公开(公告)号：EP3136421B1
公开(公告)日：2020-12-02
申请号：EP15783058.9
申请日：2015-03-04
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： WAKABAYASHI, Taishi , MEGURO, Kenji , NAKANO, Masatake , YAGI, Shinichiro , YOSHIDA, Tomosuke
IPC分类号： H01L21/762 , H01L21/02 , H01L21/3205

9. 发明授权

EP3038136B1 BONDED WAFER MANUFACTURING METHOD 有权
公开(公告)号：EP3038136B1
公开(公告)日：2020-09-02
申请号：EP14838255.9
申请日：2014-07-15
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： YOKOKAWA, Isao , KATO, Masahiro
IPC分类号： H01L21/02 , H01L21/265 , H01L27/12 , H01L21/762

10. 发明授权

EP1780794B1 METHOD FOR MANUFACTURING BONDED WAFER 有权
公开(公告)号：EP1780794B1
公开(公告)日：2020-01-15
申请号：EP05749050.0
申请日：2005-06-10
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： MITANI, Kiyoshi
IPC分类号： H01L27/12 , H01L21/02 , H01L21/265 , H01L21/762

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