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1. 发明公开

EP3112503A4 CRUCIBLE FOR CRYSTAL GROWTH, CRYSTAL GROWTH APPARATUS PROVIDED THEREWITH, AND METHOD FOR GROWING CRYSTALS 审中-公开
标题翻译： TIEGELFÜRKRISTALLZÜCHTUNG，KRISTALLZÜCHTUNGSVORRICHTUNGDAMIT UND VERFAHREN ZUMZÜCHTENVON KRISTALLEN
公开(公告)号：EP3112503A4
公开(公告)日：2017-08-23
申请号：EP14883763
申请日：2014-10-08
申请人： HITACHI LTD
发明人： KANDA TAKAYUKI , KOMINAMI SHINYA , UENO YUICHIRO , ISHITSU TAKAFUMI , SEINO TOMOYUKI , TAKAHASHI ISAO
IPC分类号： C30B11/00 , C30B13/14 , C30B29/12 , C30B29/42 , C30B29/48 , C30B35/00
CPC分类号： C30B13/08 , C01G15/00 , C30B11/00 , C30B11/002 , C30B11/007 , C30B13/14 , C30B13/16 , C30B29/12 , C30B29/42 , C30B29/46 , C30B29/48 , C30B35/002 , C30B35/007

2. 发明公开

EP3065901A4 METHOD FOR PREPARATION OF A SUPERALLOY HAVING A CRYSTALLOGRAPHIC TEXTURE CONTROLLED MICROSTRUCTURE BY ELECTRON BEAM MELTING 有权转让
标题翻译：一种用于生产超合金与以物相结构可控的微结构由电子MELTING
公开(公告)号：EP3065901A4
公开(公告)日：2017-06-14
申请号：EP14878691
申请日：2014-10-28
申请人： UNITED TECHNOLOGIES CORP
发明人： DAS GOPAL , CERNATESCU LULIANA , SHAH DILIP M
IPC分类号： B22F3/14 , B22F7/02
CPC分类号： C22C19/056 , B22F3/1055 , B22F3/15 , B22F5/009 , B22F5/04 , B22F2998/10 , B23K9/042 , B23K9/044 , B23K9/046 , B23K9/23 , B23K15/002 , B23K15/0086 , B23K15/0093 , B23K26/0006 , B23K26/342 , B23K2201/001 , B23K2203/08 , B23K2203/26 , B33Y10/00 , B33Y30/00 , B33Y70/00 , B33Y80/00 , C22C1/023 , C22C1/0433 , C22C19/05 , C22C19/055 , C22C19/057 , C22C33/0257 , C22F1/10 , C30B11/007 , C30B29/52 , F01D5/28 , F01D5/286 , F01D25/005 , F05D2300/175 , Y02P10/295
摘要： The present disclosure provides a method of preparing superalloy metals having a crystallographic texture controlled micro structure by electron beam melting.
摘要翻译：本发明提供了制备具有通过电子束熔炼一个晶体学织构显微组织控制超合金金属的方法。

3. 发明公开

EP3024961A4 METHOD AND SYSTEM OF PRODUCING LARGE OXIDE CRYSTALS FROM A MELT 审中-公开
标题翻译：方法和系统可用于产生大量的氧化物晶体从熔体
公开(公告)号：EP3024961A4
公开(公告)日：2017-04-05
申请号：EP14829028
申请日：2014-05-13
申请人： RUBICON TECH INC
发明人： MONTGOMERY MATTHEW , BURKS TIMOTHY D , PODLOZHENOV SERGEY , LEVINE JONATHAN
IPC分类号： C30B11/00 , C30B29/20
CPC分类号： C30B11/003 , C30B11/007 , C30B29/20 , Y10T117/1092

4. 发明授权

EP1937876B1 SYSTEM AND METHOD FOR CRYSTAL GROWING 有权
标题翻译：系统和方法拉晶
公开(公告)号：EP1937876B1
公开(公告)日：2016-12-28
申请号：EP06802314.2
申请日：2006-08-25
申请人： GTAT Corporation
发明人： SCHMID, Frederick , KHATTAK, Chandra, P. , JOYCE, David, B.
IPC分类号： C30B29/06 , C30B29/20 , C30B29/42 , C30B11/00
CPC分类号： C30B11/007 , C30B29/06 , C30B29/20 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1028 , Y10T117/1072 , Y10T117/1092

5. 发明公开

EP2841630A1 METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 有权
标题翻译： METHOD AND APPARATUS FOR GROWING氧化铟（IN203）单晶氧化物和氧化铟（IN203）单晶
公开(公告)号：EP2841630A1
公开(公告)日：2015-03-04
申请号：EP12717273.2
申请日：2012-04-24
申请人： Forschungsverbund Berlin E.V.
发明人： GALAZKA, Zbigniew , UECKER, Reinhard , FORNARI, Roberto
IPC分类号： C30B11/00 , C30B11/14 , C30B29/16
CPC分类号： C30B30/04 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/14 , C30B29/16 , H01F1/01 , Y10T117/1004
摘要： A method and apparatus for growing truly bulk ln
2 O
3 single crystals from the melt, as well as melt-grown bulk ln
2 O
3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting ln
2 O
3 starting material (23) during heating-up of a noble metal crucible (4) containing the ln
2 O
3 starting material (23) and thus increasing electrical conductivity of the ln
2 O
3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of ln
2 O
3 . Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid ln203 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid ln
2 O
3 starting material at least one bulk ln
2 O
3 single crystal (28.1, 28.2) is formed. We named this novel crystal growth method the "Levitation-Assisted Self-Seeding Crystal Growth Method". The apparatus for growing bulk ln
2 O
3 single crystals from the melt comprises an inductively heated thermal system with a noble metal crucible (4) and evacuation passages (22, 22.1) for gaseous decomposition products of ln
2 O
3 , while keeping very low temperature gradients. Various configurations of the induction coil (6), the noble metal crucible (4) and a lid (12) covering the crucible can be utilized to obtain very low temperature gradients, sufficient evacuation passages and a high levitation force. The electrical properties of the melt grown ln
2 O
3 single crystals can be modified in a wide range by at least one heat treatment in suitable atmospheres and appropriate temperatures.
摘要翻译：一种用于从熔体生长真正散装氧化铟单晶的方法和设备，以及熔融生长的本体氧化铟单晶是游离缺失盘。的生长方法，包括的期间（4），其含有氧化铟原料（23）的贵金属坩埚升温INITIALLY非导电氧化铟原料（23）和因此增加了氧化铟的导电性起始材料与上升的受控分解温度，在所有这足以夫妇与在通过坩埚壁（24）周围的氧化铟熔点的感应线圈（6）的电磁场。搜索耦合导致具有一个颈部（26）的形成作为结晶晶种的液态氧化铟原料的至少部分（23.1）的电磁悬浮的。在冷却过程中，贵金属坩埚（4）与所述液体氧化铟原料至少一个本体氧化铟单晶（28.1，28.2）的向下形成。我们命名这个新的晶体生长方法的“悬浮辅助自种晶体生长方法”。为与贵金属坩埚（4）和排气通路（22，22.1），用于氧化铟的气态分解产物从感应加热热系统的熔融包括生长块状氧化铟单晶，同时保持非常低的温度梯度的装置。感应线圈（6）的各种配置中，所述贵金属坩埚（4）和盖（12）覆盖所述坩埚可以用于获得非常低的温度梯度，充排气通路和高的悬浮力。熔体生长单晶氧化铟可以在宽的范围内由至少一个热处理在合适的气氛和合适的温度被修改的电性能。

6. 发明公开

EP2406413A4 METHODS AND APPARATUS FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL 有权
标题翻译：方法和设备生产薄半导体主体由熔融材料
公开(公告)号：EP2406413A4
公开(公告)日：2014-01-01
申请号：EP10751275
申请日：2010-03-09
申请人： 1366 TECHNOLOGIES INC
发明人： SACHS EMANUEL M , WALLACE RICHARD L , HANTSOO EERIK T , LORENZ ADAM M , HUDELSON G D STEPHEN , JONCZYK RALF
IPC分类号： C03B19/02 , C30B11/00 , C30B15/30 , C30B19/06 , C30B28/04 , C30B29/06 , H01L21/02 , H01L31/18
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

7. 发明公开

EP2458041A2 Kristall umfassend ein Halbleitermaterial 有权
标题翻译： Kristall aus Galliumarsenid
公开(公告)号：EP2458041A2
公开(公告)日：2012-05-30
申请号：EP12155975.1
申请日：2008-06-04
申请人： Freiberger Compound Materials GmbH
发明人： Eichler, Stefan , Bünger, Thomas , Butter, Michael , Rühmann, Rico , Scheffer-Czygan, Max
IPC分类号： C30B29/42 , C30B11/00
CPC分类号： H01L29/36 , C30B11/002 , C30B11/003 , C30B11/007 , C30B29/42 , Y10T117/10 , Y10T117/1024 , Y10T117/1092 , Y10T428/12
摘要： Ein Kristall umfassend ein Halbleitermaterial wird in einer Anordnung (1) zur Herstellung eines Kristalls aus der Schmelze (16) eines Rohmaterials gezüchtet. Die Anordnung besitzt einen Ofen mit einer ein oder mehrere Heizelemente (20, 21) aufweisenden Heizvorrichtung, die zur Erzeugung eines in einer ersten Richtung (18) gerichteten Temperaturfeldes (T) in dem Ofen eingerichtet ist, eine Vielzahl von Tiegeln (14) zur Aufnahme der Schmelze, die nebeneinander in dem gerichteten Temperaturfeld angeordnet sind, und eine Einrichtung zur Homogenisierung des Temperaturfelds in einer Ebene senkrecht zu der ersten Richtung in den Tiegeln. Der Kristall weist positive Eigenschaften hinsichtlich struktureller Perfektion und optischer / elektrischer Homogenität auf, die sich eigentlich widersprechen bzw. deren Ursachen einander entgegenwirken. Der Kristall weist einerseits eine Verteilung der Versetzungsdichte auf, wobei eine globale Standardabweichung ( σ global ) einer die Versetzungsdichte repräsentierenden Ätzgrubendichte (epd) in einer Ebene senkrecht zur Längsachse des Kristalls weniger als 23 % von einem mittleren Wert der Ätzgrubendichte für den Kristall beträgt. Gleichzeitig weist der Kristall eine Verteilung des spezifischen elektrischen Widerstands auf, wobei eine globale Standardabweichung ( σ global ) in einer Ebene senkrecht zur Längsachse des Kristalls weniger als 5.3 % von einem mittleren Wert des spezifischen elektrischen Widerstands für den Kristall beträgt.
摘要翻译：装置（1）包括具有加热装置的炉子。加热装置具有一个或多个加热元件，并且被配置成在炉中沿一个方向产生温度场。在用于接收熔体（16）的定向温度场中设置彼此相邻的多个坩埚（14）。还提供了一种用于使垂直于两个坩埚中的方向的平面中的温度场均匀化的装置，并且具有布置在坩埚之间的间隙中的填充材料，其中填充材料引起各向异性热传导。独立权利要求包括：（1）从原料熔体制造晶体的方法，其包括利用一种布置，并将原料熔体引入平行于坩埚的炉中，在每个坩埚中产生排列的温度场在方向上使基于填充材料的垂直于该方向的温度场均匀化，所述填充材料被引入到坩埚之间的间隙中或者通过产生在熔炉中操作原料熔体的行进磁场，以及调整原料熔体的凝固以形成晶体; 和（2）晶体，其包含砷化镓的半导体材料，其中所述半导体材料具有位错密度的排列，并且所述晶体是单晶。

8. 发明公开

EP1937876A4 SYSTEM AND METHOD FOR CRYSTAL GROWING 有权
标题翻译： SYSTEM UND VERFAHREN ZUM KRISTALLZIEHEN
公开(公告)号：EP1937876A4
公开(公告)日：2010-07-07
申请号：EP06802314
申请日：2006-08-25
申请人： CRYSTAL SYST
发明人： SCHMID FREDERICK , KHATTAK CHANDRA P , JOYCE DAVID B
IPC分类号： C30B35/00 , C30B17/00
CPC分类号： C30B11/007 , C30B29/06 , C30B29/20 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1028 , Y10T117/1072 , Y10T117/1092

9. 发明公开

EP2132366A2 DISPOSITIF ET PROCÉDÉ DE FABRICATION DE PLAQUES AUTOSUPPORTÉES DE SILICIUM OU AUTRES MATÉRIAUX CRISTALLINS 审中-公开
标题翻译： DEVICE AND METHOD FOR制造自承的板或其它硅晶体材料
公开(公告)号：EP2132366A2
公开(公告)日：2009-12-16
申请号：EP08775638.3
申请日：2008-03-07
申请人： Apollon Solar , Cyberstar , Centre National de la Recherche Scientifique , Institut National Polytechnique de Grenoble
发明人： EINHAUS, Roland , LISSALDE, François , DELANNOY, Yves
IPC分类号： C30B11/00 , C30B29/06 , C30B29/60
CPC分类号： C30B11/001 , C30B11/002 , C30B11/007 , C30B15/06 , C30B15/34 , C30B29/06 , H01L31/18 , Y10T117/1024
摘要： The invention relates to a device for making a plate (8) of a crystalline material by the directed crystallisation of a liquid-phase material (5), that comprises at least one crucible (1) with a bottom (2), side walls (3) and at least one horizontal outlet slot (4) provided on a lower portion of a side wall (3). The crucible (1) comprises, on its outer surface and in the immediate vicinity of the slot (4), electromagnetic means (6) for generating, at least at the slot (4), magnetic repulsion forces on the liquid-phase material (5). An alternating current with a frequency between 10kHz and 300kHz flows through the electromagnetic means (6). In order to promote the agitation of the liquid-phase material (5), a low frequency can be superimposed to the former.

10. 发明公开

EP1266053A1 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF 2? 审中-公开
标题翻译：方法和设备单晶的生产，特别是氟化钙
公开(公告)号：EP1266053A1
公开(公告)日：2002-12-18
申请号：EP01908872.3
申请日：2001-02-06
申请人： CORNING INCORPORATED
发明人： HERVE, Patrick, J., P.
IPC分类号： C30B11/02 , C30B11/14 , C30B1/02 , C30B29/12
CPC分类号： C30B11/007 , C30B11/00 , C30B11/001 , C30B29/12
摘要： The present invention relates to a process and a device for growing single crystals, especially of CaF2. Within the framework of said process, a stack of crucibles (100, 101, ..., 106, ...) containing the starting material is successively moved translationally through a melting chamber (C1) and an annealing chamber (C2), said movement being continuous, smooth and without interruption. The present invention provides for the preparation of fluoride, single crystals, particularly optical fluoride single crystals and optical UV lambda

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