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1. 发明授权

EP2824070B1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON 有权
公开(公告)号：EP2824070B1
公开(公告)日：2018-12-12
申请号：EP12870715.5
申请日：2012-03-08
申请人： Silicio Ferrosolar S.L.
发明人： TOKUMARU , Shinji , HIYOSHI , Masataka , KONDO , Jiro , DOHNOMAE, Hitoshi , KISHIDA , Yutaka , NAKAZAWA , Shigeru , ONOUE , Kozo
IPC分类号： C01B33/037 , C30B11/00 , C30B29/06 , H01L31/0288 , C01B33/021
CPC分类号： C01B33/037 , C01B33/021 , C30B11/002 , C30B11/007 , C30B13/10 , C30B21/00 , C30B29/06 , H01L31/0288
摘要： Provided are: a method for manufacturing highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

2. 发明公开

EP3099439A4 CASTING APPARATUS AND METHOD FOR FORMING MULTI-TEXTURED, SINGLE CRYSTAL MICROSTRUCTURE 有权转让
标题翻译： GIESSVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER EINKRISTALLINEN MIKROSTRUKTUR MIT MEHREREN TEXTUREN
公开(公告)号：EP3099439A4
公开(公告)日：2017-09-06
申请号：EP15743056
申请日：2015-01-09
申请人： UNITED TECHNOLOGIES CORP
发明人： BULLIED STEVEN J , FURRER DAVID ULRICH , MARCIN JOHN JOSEPH , SEETHARAMAN VENKATARAMA K
IPC分类号： B22D27/08 , B22C9/04 , B22D27/04 , C30B11/00
CPC分类号： B22D27/045 , B22C9/04 , B22D27/08 , C30B11/002 , C30B11/007 , C30B11/02 , C30B29/06
摘要： An investment casting apparatus includes a furnace having an opening, a mold support, and a multi-axis actuator connected with the mold support and configured to retract the mold support from the opening with multiple-axis motion. An investment casting method includes withdrawing, with multiple-axis motion, a mold through the opening of the furnace to solidify a molten metal- or metalloid-based material in the mold. The apparatus and method can be used to form a cast article that has a body formed of the metal- or metalloid-based material. The body has a multi-textured, single crystal microstructure.
摘要翻译：熔模铸造设备包括具有开口的熔炉，模具支撑件以及与模具支撑件连接并且被配置为通过多轴运动将模具支撑件从开口缩回的多轴致动器。一种熔模铸造方法包括通过多轴运动使模具通过炉子的开口取出以固化模具中的熔融金属或准金属基材料。该设备和方法可用于形成具有由基于金属或准金属的材料形成的本体的铸造制品。该机构具有多纹理，单晶微观结构。

3. 发明公开

EP2824070A1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON 审中-公开
标题翻译：过程在这个过程中产生高纯度硅得到高纯度的硅和硅为原料的高纯度硅生产
公开(公告)号：EP2824070A1
公开(公告)日：2015-01-14
申请号：EP12870715.5
申请日：2012-03-08
申请人： Silicio Ferrosolar S.L.
发明人： TOKUMARU , Shinji , HIYOSHI , Masataka , KONDO , Jiro , DOHNOMAE, Hitoshi , KISHIDA , Yutaka , NAKAZAWA , Shigeru , ONOUE , Kozo
IPC分类号： C01B33/037 , C01B33/02 , C01B33/021
CPC分类号： C01B33/037 , C01B33/021 , C30B11/002 , C30B11/007 , C30B13/10 , C30B21/00 , C30B29/06 , H01L31/0288
摘要： Provided are: a method for manufacturing highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.
摘要翻译：本发明提供：用于通过熔融硅单向凝固制造高纯度硅的方法，并能廉价且工业上容易地制造高纯度的硅做具有低的氧浓度和碳浓度低并适合于应用：如制造太阳能电池; 高纯度的硅通过该方法获得; 和有机硅原料制造高纯度硅。一种用于使用熔融硅含有100至1000 ppmw的碳和0.5〜2000 ppmw的锗作为原料当制造通过在铸造容器单向凝固的熔融硅原料的高纯度硅制造高纯硅的方法，所述高纯度的硅获得通过该方法，并且硅原料制造高纯度硅。

4. 发明公开

EP2739771A1 LIQUID-COOLED HEAT EXCHANGER 审中-公开
标题翻译：液体冷却交换
公开(公告)号：EP2739771A1
公开(公告)日：2014-06-11
申请号：EP12820600.0
申请日：2012-07-17
申请人： Gtat Corporation
发明人： CHARTIER, Carl
IPC分类号： C30B15/14 , C30B15/10 , C30B29/06 , C30B11/00
CPC分类号： C30B11/003 , C30B11/002 , C30B11/007 , C30B11/02 , C30B29/06 , F28D15/00 , F28F13/00
摘要： A crystal growth furnace comprising a crucible containing at least feedstock material and a liquid-cooled heat exchanger that is vertically movable beneath the crucible to extract heat from it to promote the growth of a crystalline ingot is disclosed. The liquid-cooled heat exchanger comprises a heat extraction bulb made of high thermal conductivity material that is vertically movable into thermal communication with the crucible to extract heat from the crucible using a liquid coolant. A liquid-cooled heat exchanger enclosed in a sealed tubular outer jacket is also disclosed as is a method for producing a crystalline ingot using a vertically movable liquid-cooled heat exchanger.

5. 发明公开

EP2558233A1 HERSTELLUNG EINES KRISTALLINEN HALBLEITERWERKSTOFFS 有权
公开(公告)号：EP2558233A1
公开(公告)日：2013-02-20
申请号：EP11714744.7
申请日：2011-04-11
申请人： Schmid Silicon Technology GmbH
发明人： KERAT, Uwe , SCHMID, Christian , HAHN, Jochem
IPC分类号： B22D27/04 , C01B33/02 , C30B15/00 , C30B29/02
CPC分类号： C30B11/02 , C01B33/02 , C30B11/001 , C30B11/007 , C30B11/08 , C30B13/00 , C30B15/00 , C30B15/02 , C30B29/06
摘要： The invention relates to a method for producing a crystalline semiconductor material, wherein particles from the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas stream which has a sufficiently high temperature, in order to convert the particles of the semiconductor material from the solid into the liquid and/or gaseous state and/or in order to thermally decompose the precursor compound. In a further step, liquid semiconductor material is condensed and/or separated out of the gas stream and converted into a solid state to form monocrystalline or polycrystalline crystal structures.
摘要翻译：制造结晶半导体材料的方法包括将半导体材料的颗粒和/或半导体材料的前体化合物进料到气流中，其中气流具有足够高的温度以将半导体材料的颗粒从固体进入液态和/或气态和/或热分解前体化合物，将液体半导体材料与气流冷凝和/或分离，并将液体半导体材料转化为固态，形成单晶或多晶晶体性质。

6. 发明公开

EP2497847A3 Method of processing materials suitable for producing high purity silicon 审中-公开
标题翻译：一种用于制备的材料用于生产高纯度的硅的过程
公开(公告)号：EP2497847A3
公开(公告)日：2012-12-26
申请号：EP12171211.1
申请日：2009-08-21
申请人： AMG Idealcast Solar Corporation
发明人： Clark, Roger, F. , Cliber, James, A. , Stoddard, Nathan, G. , Gerber, Jesse, I. , Roberts, Raymond, J. , Wilmerton, Mark, A.
IPC分类号： C30B11/00 , C30B29/06 , C30B35/00 , H05B3/03 , H05B7/00
CPC分类号： C30B29/06 , C30B11/002 , C30B11/007 , C30B15/10 , C30B35/002 , C30B35/005 , F27B14/08 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1064
摘要： The present invention relates to a method of processing materials, especially at elevated temperatures in non-oxidizing atmosphere, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The method comprises the steps of supporting a shaped support liner, nesting a crucible within the shaped support liner, elevating a temperature of the crucible and containing a molten feedstock within the crucible.

7. 发明公开

EP2325354A1 Kristallisationsanlage und Kristallisationsverfahren 审中-公开
公开(公告)号：EP2325354A1
公开(公告)日：2011-05-25
申请号：EP10191666.6
申请日：2010-11-18
申请人： Steremat Elektrowärme GmbH , Forschungsverbund Berlin E.V.
发明人： Trautmann, Veit , Rudolph, Peter , Kießling, Frank-Michael , Fornari, Roberto
IPC分类号： C30B11/00 , C30B15/14 , C30B15/30
CPC分类号： C30B11/003 , C30B11/007 , C30B15/14 , C30B15/305
摘要： Die Erfindung betrifft eine Kristallisationsanlage mit elektrischer Heizeinrichtung, die als ein um eine Tiegelwand (41) eines Tiegels (40) herum positionierbares Heizer-Magnet-Modul (100) ausgeführt ist.
In einem Innenraum (10) eines ersten Heizer-Magnet-Modules (100) ist ein zweites, ebenfalls um die Tiegelwand (41) des Tiegels (40) herum positionierbares Heizer-Magnet-Modul (200) vorgesehen.
Ferner ist ein Kristallisationsverfahren vorgesehen.
摘要翻译：结晶系统包括电加热器，该电加热器被实施为位于坩埚（40）的坩埚壁（41）上的第一加热器 - 磁体模块（100），其中第二加热器 - 磁体模块设置在坩埚所述坩埚位于所述第一加热器 - 磁体模块的内部空间（10）中。设置有另外的加热器 - 磁体模块，其被设置在相应的先前加热器 - 磁体模块的内部空间中。第一加热器 - 磁体模块由线圈或两个或更多个叠置的线圈形成，彼此之间具有螺旋状或阶梯形线圈。结晶系统包括电加热器，该电加热器被实施为位于坩埚（40）的坩埚壁（41）上的第一加热器 - 磁体模块（100），其中第二加热器 - 磁体模块布置在坩埚所述坩埚位于所述第一加热器 - 磁体模块的内部空间（10）中。设置有另外的加热器 - 磁体模块，其被设置在相应的先前加热器 - 磁体模块的内部空间中。第一加热器 - 磁体模块由具有螺旋形或阶梯形线圈的线圈或两个或更多个叠置的线圈彼此排列而形成。第二加热器 - 磁体模块由螺旋形或阶梯形绕组（50）彼此重叠的线圈或两个或更多个堆叠线圈形成，或者第二加热器 - 磁体模块由具有曲折绕组的线圈形成。第一加热器 - 磁体模块具有带有螺旋形上升绕组的单个线圈，并且第二加热器磁性模块具有具有曲折绕组的线圈，其中线圈由三个曲折段形成。第一和第二加热器 - 磁体模块具有彼此相互排列的具有螺旋形绕组的两个线圈。加热器 - 磁体模块彼此电隔离并且线圈被电控制。设置绝缘元件用于布置在加热器 - 磁体模块之间的电绝缘。加热器 - 磁体模块不彼此电隔离，并且线圈具有公共的电源线。稳定元件布置在加热器 - 磁体模块的线圈的螺旋形绕组上。由加热器 - 磁体模块的线圈包围的表面是圆形或矩形的。包括结晶过程的独立权利要求。

8. 发明公开

EP2324147A1 HIGH TEMPERATURE SUPPORT APPARATUS AND METHOD OF USE FOR CASTING MATERIALS 有权
标题翻译：高温轴承装置和使用材料的铸造方法
公开(公告)号：EP2324147A1
公开(公告)日：2011-05-25
申请号：EP09791781.9
申请日：2009-08-21
申请人： AMG Idealcast Solar Corporation
发明人： CLARK, Roger, F. , CLIBER, James, A. , STODDARD, Nathan, G. , GERBER, Jesse, I. , ROBERTS, Raymond, J. , WILMERTON, Mark, A.
IPC分类号： C30B29/06 , C30B15/10 , C30B11/00 , C30B35/00 , F27B14/08
CPC分类号： C30B29/06 , C30B11/002 , C30B11/007 , C30B15/10 , C30B35/002 , C30B35/005 , F27B14/08 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1064
摘要： This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces.

9. 发明公开

EP2286005A2 SYSTEM AND PROCESS FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON FOR PHOTOVOLTAIC USE 审中-公开
标题翻译：系统和方法制备多晶硅的FOR USE光伏
公开(公告)号：EP2286005A2
公开(公告)日：2011-02-23
申请号：EP09761715.3
申请日：2009-06-09
申请人： Antonello, Luis Maria , Zarcone, Mariano
发明人： Antonello, Luis Maria , Zarcone, Mariano
IPC分类号： C30B11/00 , F27B5/02 , F27B5/04
CPC分类号： F27B5/02 , C30B11/007 , C30B28/06 , C30B29/06 , F27B5/04
摘要： The invention relates to an apparatus and process for the prodution of polycrystalline silicon for photovoltaic applications. The apparatus is characterised in that it comprises of multiple chambers, preferably three(1, 2, 3), arranged longitudinally one after the other and equipped with: gas immission and extraction means; means for guiding (7) and moving the crucible (6) containing the silicon-based material; insulation and temperature control means; heating means; air-tightness means (8) for each chamber. One of said chambers constitutes the furnace of the apparatus and comprises an area (4) in which the smelting of the material contained in the crucible (6) is carried out, said furnace being equipped with heating means and bearing a heat-stable pedestal (5), suitable for moving the crucible vertically and thus for introducing it into, or extracting it from the smelting area (4), respectively.

10. 发明公开

EP1867759A1 Manufacturing equipment for polysilicon ingot 有权
标题翻译： FertigungsanlagefürPolysiliciumblöcke
公开(公告)号：EP1867759A1
公开(公告)日：2007-12-19
申请号：EP07252406.9
申请日：2007-06-13
申请人： Cho, Young Sang , Kim, Young Jo
发明人： Cho, Young Sang , Kim, Young Jo
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B11/002 , C30B11/007 , C30B29/06 , Y10T117/10 , Y10T117/1016 , Y10T117/102 , Y10T117/1024 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.
摘要翻译：其中公开了一种用于制造太阳能电池的多晶硅锭的装置，其具有通过使用冷却板将在坩埚中熔化的硅固化而形成的均匀晶粒。多晶硅锭生产装置包括：用于熔化硅的坩埚; 输送轴，用于调节坩埚的高度; 用于加热坩埚的加热器; 以及位于坩埚下方的用于冷却坩埚的冷却板。

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