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1. 发明授权

EP0604407B1 Photonic-integrated-circuit fabrication process 失效
标题翻译：对于光子集成电路的制造工艺
公开(公告)号：EP0604407B1
公开(公告)日：1998-11-04
申请号：EP94200395.5
申请日：1989-08-21
申请人： AT&T Corp.
发明人： Koch, Thomas Lawson , Koren, Uziel
IPC分类号： G02B6/12 , H01L21/82 , H01S3/025
CPC分类号： H01S5/0264 , G02B6/124 , G02B6/136 , H01L21/8252 , H01S5/1231 , Y10S148/095 , Y10S148/106 , Y10S438/942

2. 发明授权

EP0649200B1 Fabrication method of a planar, single-mode, semiconductor quantum-well window laser with current confinement 失效
标题翻译：平面单模量子阱半导体激光器出射窗和电流限制的制造方法
公开(公告)号：EP0649200B1
公开(公告)日：1998-07-08
申请号：EP94480092.9
申请日：1994-09-23
申请人： International Business Machines Corporation
发明人： Behfar-Rad, Abbas , Meier, Heinz Peter , Harder, Christoph Stephen
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/162 , H01S5/2004 , H01S5/2009 , H01S5/2059 , H01S5/22 , H01S5/3211 , H01S5/34 , H01S5/3409 , H01S5/3413 , H01S5/3421 , H01S2301/18 , Y10S148/095

3. 发明公开

EP0702435A1 Method for making a reflective digitally tunable laser 失效
标题翻译：制造方法用于数字反射可调激光器
公开(公告)号：EP0702435A1
公开(公告)日：1996-03-20
申请号：EP95306216.3
申请日：1995-09-06
申请人： AT&T Corp.
发明人： Joyner, Charles H. , Zirngibl, Martin , Meester, Judith P.
IPC分类号： H01S3/025 , H01S3/25 , G02B6/34
CPC分类号： H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01S5/026 , H01S5/0268 , H01S5/141 , H01S5/2077 , H01S5/4062 , H01S5/4068 , Y10S148/095
摘要： A method for forming a reflective digitally tunable laser using selective area epitaxy is disclosed. The laser comprises passive waveguides and a plurality of optical amplifiers. The waveguides and optical amplifiers are formed by depositing multiple quantum wells having a suitable bandgap. According to the method, the multiple quantum wells forming both the passive waveguides and the optical amplifiers are deposited simultaneously using a dielectric mask. The mask comprises dual, rectangularly-shaped strips of dielectric material, spaced to form a gap. The multiple quantum wells grown in the gap are suitable for use as optical amplifiers, and those grown outside of the gap are suitable for use as passive waveguides.

4. 发明公开

EP0653823A2 A semiconductor device with high heat conductivity 失效
标题翻译：半导体器件具有高的热导率。
公开(公告)号：EP0653823A2
公开(公告)日：1995-05-17
申请号：EP94117496.3
申请日：1994-11-07
申请人： MOTOROLA, INC.
发明人： Lebby, Michael S. , Shieh, Chan-Long , Davis, Kenneth L.
IPC分类号： H01S3/085 , H01S3/043 , H01L21/58 , H01L23/373
CPC分类号： H01L23/5329 , H01L23/3732 , H01L2924/0002 , H01S5/02484 , H01S5/0282 , H01S5/0422 , H01S5/183 , H01S2301/176 , Y10S148/095 , H01L2924/00
摘要： A VCSEL having a first mirror stack (12) positioned on the surface of a substrate (10), an active region (13) positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack (14) positioned on the active region, the second mirror stack forming a ridge or mesa (16) having a side surface (31). A metal contact layer (40) is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area (45), and a layer of diamond-like material (50) is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.

5. 发明公开

EP0604407A3 Photonic-integrated-circuit fabrication process 失效
标题翻译：制造工艺用于光子集成电路。
公开(公告)号：EP0604407A3
公开(公告)日：1995-02-22
申请号：EP94200395.5
申请日：1989-08-21
申请人： AT&T Corp.
发明人： Koch, Thomas Lawson , Koren, Uziel
IPC分类号： G02B6/12 , H01L21/82 , H01S3/025
CPC分类号： H01S5/0264 , G02B6/124 , G02B6/136 , H01L21/8252 , H01S5/1231 , Y10S148/095 , Y10S148/106 , Y10S438/942
摘要： A process for etching corrugated patterns, for distributed feedback (DFB) or distributed Bragg reflector (DBR) devices, is disclosed. A masking layer is deposited over the area adjacent to the area where the corrugation is required. A corrugation-patterned mask is formed on the masking layer as well as on the area where the corrugation is required and etching is carried out to form corrugations (62) in the masking layer as well as the desired corrugations (61). The masking layer can then be removed. The material of the masking layer is chosen to etch at the same rate, and thus to deplete the concentration of the etchant by the same amount, as the material in which the corrugations are required. Thus, higher concentrations of etchant near the edge of the masking layer, and consequent over-etching, are avoided.

6. 发明公开

EP0556317A4 EP0556317A4 - 失效
标题翻译： EP0556317A4 - Google专利
公开(公告)号：EP0556317A4
公开(公告)日：1994-05-04
申请号：EP92900844
申请日：1991-10-09
申请人： BELL COMMUNICATIONS RESEARCH, INC.
发明人： CLAUSEN, EDWARD, MARTIN, JR , COLAS, ETIENNE, GUY , VON LEHMEN, ANN, CHRISTINE
IPC分类号： H01L21/203 , H01L21/20 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/308 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/42
CPC分类号： H01L21/02057 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01L21/02642 , H01L21/3081 , H01S5/18305 , H01S5/18308 , H01S5/2059 , H01S5/209 , H01S5/2222 , H01S5/2224 , H01S5/423 , Y10S148/026 , Y10S148/05 , Y10S148/095
摘要： A method of etching and regrowing III-V compounds in a sharply defined vertical feature. A Fabry-Perot cavity laser structure including spacers (16, 20), interference mirrors (14, 22), and quantum well layer (18) is grown using molecular beam epitaxy. Next a tungsten mask (24) defines the areas of the laser array which are then etched into high aspect-ratio pillars by a chemically assisted ion beam. A second thermal chlorine gas etch removes a portion of the sidewalls without attacking the tungsten, thereby removing ion-beam damage, and creating a tungsten lip (26). Organo-metallic chemical vapor deposition regrows the III-V material (28) and can quickly planarize the pillars. The tungsten lips aids in the planarization by preventing the growth from climbing over the top of the pillar. The regrown material may be insulating, containing conductive laser contacts, or provide tailored index guiding in the laser device.
摘要翻译：蚀刻和再生成III-V化合物的方法，其具有清晰的垂直特征。使用分子束外延生长包括间隔物（16,20），干涉镜（14,22）和量子阱层（18）的法布里 - 珀罗腔激光器结构。接下来，钨掩模（24）限定激光器阵列的区域，然后通过化学辅助离子束将其蚀刻成高纵横比的柱。第二热氯气蚀刻去除一部分侧壁而不攻击钨，由此去除离子束损伤，并形成钨唇（26）。有机金属化学气相沉积再生III-V材料（28），并可以快速平面化柱。钨嘴通过防止生长爬过支柱顶部而有助于平面化。再生长材料可以是绝缘的，包含导电激光触点，或者在激光器设备中提供定制的索引引导。

7. 发明公开

EP0533197A3 Stripe laser diode having an improved efficiency for current confinement 失效
标题翻译：具有改进效率的条纹激光二极管
公开(公告)号：EP0533197A3
公开(公告)日：1993-11-03
申请号：EP92116024.8
申请日：1992-09-18
申请人： FUJITSU LIMITED
发明人： Kondo, Makoto, c/o Fujitsu Limited , Furuya, Akira, c/o Fujitsu Limited , Anayama, Chikashi, c/o Fujitsu Limited , Sugano, Mami, c/o Fujitsu Limited , Domen, Kay, c/o Fujitsu Limited , Tanahashi, Toshiyuki, c/o Fujitsu Limited , Sekiguchi, Hiroshi, c/o Fujitsu Limited
IPC分类号： H01L33/00 , H01S3/19 , G11B7/125
CPC分类号： H01L33/305 , G11B7/126 , G11B7/127 , H01L33/0062 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2238 , H01S5/305 , H01S5/3077 , H01S5/321 , H01S5/32325 , Y10S148/095
摘要： A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure (301 a) defined by a plurality of crystallographically distinct surfaces (303b 1 , 303b 2 , 301c) on a surface of a semiconductor substrate (300); forming an epitaxial layer (305, 307) of InGaAIP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, AI and P; wherein the InGaAIP layer is doped to the p-type by incorporating Mg while growing the InGaAIP by adding a gaseous source material of Mg into said source materials of In, Ga, AI and P such that the InGaAIP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

8. 发明公开

EP0475618A3 Method of fabricating semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：EP0475618A3
公开(公告)日：1992-05-06
申请号：EP91307766.5
申请日：1991-08-23
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Takahashi, Kazuhisa, c/o Mitsubishi Denki K.K.
IPC分类号： H01L33/00 , H01S3/19 , H01S3/025 , H01S3/085
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0062 , H01S5/0201 , H01S5/028 , H01S5/162 , H01S5/164 , Y10S148/095 , Y10S148/16
摘要： A method of fabricating a semiconductor laser device includes disposing a lower cladding layer (22), a superlattice active layer (23), an upper cladding layer (24), and a contact layer (25) in the named order on a substrate (21), disposing, on resonator end surfaces, films (26A,26B) containing a material which can cause disorder of the semiconductor superlattice structure at a high temperature, and causing current to flow between the substrate (21) and the contact layer (25) to cause laser oscillations. The laser oscillations cause laser light to be generated, which is absorbed at the resonator end surfaces (28A,28B). The resonator end surfaces (28A,28B) are locally heated due to absorption of laser light, whereby the disorder-causing material is diffused into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonant end surface is disordered to thereby form window regions (27A,27B).

9. 发明公开

EP0473362A3 Improved distributed Bragg reflectors and devices incorporating same 失效
标题翻译：改进的分布式反向器和与之并入的器件
公开(公告)号：EP0473362A3
公开(公告)日：1992-05-06
申请号：EP91307731.9
申请日：1991-08-22
申请人： AT&T Corp.
发明人： Blonder, Greg E. , Chandross, Edwin Arthur , Ho, Seng-Tiong , McCall, Samuel L. , Slusher, Richart E. , West, Kenneth W.
IPC分类号： G02B5/28 , H01L33/00 , H01S3/085
CPC分类号： H01L33/465 , G02B6/122 , H01L33/0062 , H01L33/105 , H01S5/18341 , H01S5/18344 , H01S5/18361 , H01S5/2081 , Y10S148/05 , Y10S148/095
摘要： Distributed Bragg Reflectors (24,25) of high efficacy based on alternating layers (26,27) of large difference in refractive index are fabricated by epitaxial growth followed by etchant removal and back-filling to produce a structure in which alternation is between layers of retained epitaxially grown material and layers of back-filled material. Such reflectors may serve simply as mirrors or may be incorporated in a variety of devices including lasers, LEDs, detectors, optical switches in which the DBRs serve e.g. for cavitation.

10. 发明公开

EP0470372A2 Atomic element doped semi-conductor injection laser fabricated by using ion implantation and epitaxial growth on the implanted surface 失效
标题翻译：通过离子注入装置和由植入的表面上进行外延生长产生的并且掺杂有原子注入式激光器。
公开(公告)号：EP0470372A2
公开(公告)日：1992-02-12
申请号：EP91111236.5
申请日：1991-07-05
申请人： Hewlett-Packard Company
发明人： Wang, Shih-Yuan , Tan, Michael R.T.
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/305 , H01S5/3068 , Y10S148/095
摘要： A semiconductor laser diode includes a first buffer layer (14), a second buffer layer (18') and an active layer (16) sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant ions are such that energy transfer between the unimplanted material in the active layer and the dopant ions implanted causes lasing action substantially at a single frequency characteristic of the dopant ions. The two buffer layers confine light emitted by the active layer. According to one aspect of the invention, the second buffer layer is grown epitaxially on the active layer. According to one aspect of the invention, the second buffer layer is grown epitaxially on the active layer. In the preferred embodiment, the structure is made by first growing a thin second buffer layer (18)_ epitaxially on the active layer. The dopant ions are then implanted into the active layer through the thin second buffer layer (18). The structure us heated to a high temperature to anneal the structure and to activate the dopants. The second buffer layer is then further grown to make it thicker so as to be more effective in confining the light emission in the active layer. According to another aspect of the invention, the dopant ions are titanium ions.
摘要翻译：一种半导体激光二极管包括第一缓冲层（14），第二缓冲层（18“），并在夹在两个缓冲层之间的活性层（16）。活性层中含有的掺杂剂离子，其中该掺杂剂离子被检查所做的未注入的材料之间的有源层和注入导致在掺杂剂离子的单个频率特性基本上激光作用的掺杂剂离子的能量转移。在两个缓冲层限制由有源层发射的光。。根据本发明的一个方面，所述第二缓冲层上外延生长的有源层上。。根据本发明的一个方面，所述第二缓冲层上外延生长的有源层上。在优选实施例中，结构是由第一有源层上生长薄的第二缓冲层（18）_外延制成。掺杂离子然后通过薄的第二缓冲层（18）注入到有源层。结构我们加热至高温退火的结构和以激活掺杂剂。然后，第二缓冲层生长。此外，使其较厚，以便在活性层围发光更有效。。根据本发明的另一个方面，所述的掺杂离子为钛离子。

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