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    • 6. 发明公开
    • Method for making a VCSEL
    • 激光器激光雷达
    • EP0715378A1
    • 1996-06-05
    • EP95117900.1
    • 1995-11-14
    • MOTOROLA, INC.
    • Shieh, Chan-LongLebby, Michael S.Lungo, John
    • H01S3/085
    • H01S5/18308H01S5/0422H01S5/2063H01S5/2081
    • A substrate (103) with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors (105), an active area (107), a second stack of distributed Bragg reflectors (109), a contact region (111), and a dielectric layer (115) is provided. A first isolation trench (201) is formed that extends through the dielectric layer (115), the contact region (111), and into a portion of the second distributed Bragg reflectors (109). A dielectric layer is disposed on the substrate (304). A second isolation trench (307) is formed through the nitride layer (304), the contact region (111), the second distributed Bragg reflectors (109), the active region (107) and a portion of the first distributed Bragg reflectors (105), wherein the second isolation trench (307) encircles the first isolation trench (201). A first electrical contact is formed on the first distributed Bragg reflectors and a second electrical contact (604) is formed on the contact region (111).
    • (I)用于制造脊垂直腔表面发射激光器的方法包括以下步骤:a)为基板提供具有分布布拉格反射器的第一叠层的表面,有源区,分布布拉格反射器的第二叠层,接触区 和介电层。第一反射器堆叠在表面上,有源区域在第一堆叠上,第二堆叠在有源区域上,接触区域在第二堆叠上,并且电介质位于接触区域上 。 b)通过电介质,接触区域和进入第二反射器叠层的一部分的第一隔离沟槽图案化,形成脊。 第一隔离沟槽包围电介质的一部分,接触部分和第二反射体层的一部分。 c)使通过电介质,接触,第二反射体叠层,有源区和第一反射体叠层的一部分围绕第一隔离沟槽的第二隔离沟槽图案化。 d)在第一叠反射体上形成第一电接点。 e)在脊的接触区域上形成第二电接触。 (II)还要求保护的是(i)的方法,其中f)在接触区域上形成氮化硅膜作为电介质,并且衬底表面被注入形成约束区域g),随后是第二层氮化物 被掩模和蚀刻以去除暴露的第二氮化物层,接触,第二堆叠,有源区和第一堆叠的部分以形成第二隔离区。 h)在第一堆叠上形成金属接触,形成隔离沟槽。 i)在衬底上形成第三层氮化物,进行掩模蚀刻以暴露台面。 j)将导电材料沉积在基底上并进行掩模蚀刻以从台面去除导体。 k)在掩模和蚀刻的基板上形成抗反射涂层以暴露一部分导电材料。
    • 8. 发明公开
    • Biosensor or chemical sensor with indicator film
    • 生物传感器和化学传感器
    • EP0751392A2
    • 1997-01-02
    • EP96109961.1
    • 1996-06-20
    • MOTOROLA, INC.
    • Ackley, Donald E.Shieh, Chan-Long
    • G01N27/414
    • G01N27/414Y10S436/806
    • A chemical sensor (10) includes a thin film transistor (15) with a gate (16) positioned on one side. An insulating layer (42) is positioned on the opposite side and an indicator film (17) is positioned on the insulating layer (42) in generally opposed relationship to the gate (16). Induced charge in the indicator film (17) caused by a biological or chemical species changes the channel current in the transistor (15). A potential on the gate (16) is then used to null out the resulting change in channel current. The potential used to null out the current change is an extremely sensitive measure of the induced charge.
    • 化学传感器(10)包括具有位于一侧的栅极(16)的薄膜晶体管(15)。 绝缘层(42)位于相对侧,并且指示膜(17)以大致相对于栅极(16)的关系定位在绝缘层(42)上。 由生物或化学物质引起的指示膜(17)中的诱导电荷改变晶体管(15)中的沟道电流。 然后使用门(16)上的电位来消除所导致的通道电流变化。 用于消除当前变化的潜力是感应电荷的极其敏感的测量。
    • 9. 发明公开
    • Vertical cavity surface emitting laser having continuous grading
    • 激光镭射激光镭射
    • EP0715379A1
    • 1996-06-05
    • EP95118364.9
    • 1995-11-22
    • MOTOROLA, INC.
    • Shieh, Chan-LongLebby, Michael S.Lee, Hsing-ChungGrodzinski, Piotr
    • H01S3/085
    • H01S5/183B82Y20/00H01S5/3054H01S5/3215H01S5/34313
    • A first stack of distributed Bragg mirrors (106) having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface (104) of a substrate (103) with a first plurality of continuous gradient layers (110) positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region (113) is disposed on the first stack of distributed Bragg mirrors (106). An active region (118) is disposed on the first cladding region (113) with a second cladding region (128) being dispose on the active region. A second stack of distributed Bragg mirrors (137) having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers (145) being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
    • 具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜(106)的第一堆叠被布置在基板(103)的表面(104)上,第一多个连续梯度层(110)位于 不同铝浓度的交替层,以动态地将铝浓度从交替层之一移动到另一个交替层。 第一包层区域(113)设置在分布布拉格反射镜(106)的第一堆叠上。 有源区(118)设置在第一包层区(113)上,第二包层区(128)设置在有源区上。 具有不同浓度铝的交替铝砷化镓层的分布布拉格反射镜(137)的第二堆叠被布置在第二包层区域上,第二多个连续梯度层(145)位于不同铝浓度的交替层之间 动态地将铝浓度从改变层之一改变为另一个交替层。