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1. 发明授权

EP3602606B1 SURFACE TREATMENT METHODS AND COMPOSITIONS THEREFOR 有权
公开(公告)号：EP3602606B1
公开(公告)日：2024-06-26
申请号：EP18772478.6
申请日：2018-03-22
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/306 , H01L21/321 , C09D7/63
CPC分类号： H01L21/02057 , H01L21/306 , H01L21/3105 , H01L21/321 , C09D7/63

2. 发明公开

EP3298622A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 有权
标题翻译：用于清洁半导体晶片的方法和设备
公开(公告)号：EP3298622A1
公开(公告)日：2018-03-28
申请号：EP15892190.8
申请日：2015-05-20
申请人： ACM Research (Shanghai) Inc.
发明人： WANG, Hui , CHEN, Fufa , CHEN, Fuping , WANG, Jian , WANG, Xi , ZHANG, Xiaoyan , JIN, Yinuo , JIA, Zhaowei , XIE, Liangzhi , WANG, Jun , LI, Xuejun
IPC分类号： H01L21/02 , B08B3/12 , B08B3/10
CPC分类号： H01L21/67253 , B08B3/12 , H01L21/02057 , H01L21/67051 , H01L21/67092
摘要： A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1

3. 发明公开

EP3258485A4 SOLUTION AND METHOD FOR REMOVAL OF GROUP III-V ELEMENT OXIDE, SOLUTION FOR TREATMENT OF GROUP III-V ELEMENT COMPOUND, SOLUTION FOR PREVENTING OXIDATION OF GROUP III-V ELEMENT, SOLUTION FOR TREATMENT OF SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCTION OF SEMICONDUCTOR SUBSTRATE PRODUCT 有权转让
公开(公告)号：EP3258485A4
公开(公告)日：2018-03-14
申请号：EP16749153
申请日：2016-02-04
申请人： FUJIFILM CORP
发明人： TAKAHASHI SATOMI , BAK SEONGMU , MIZUTANI ATSUSHI , INABA TADASHI
IPC分类号： H01L21/306 , H01L21/311
CPC分类号： H01L21/304 , C07C321/04 , C07C321/22 , C07C321/26 , C22B30/04 , C22B58/00 , H01L21/02052 , H01L21/02057 , H01L21/3081 , H01L21/31111
摘要： Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

4. 发明公开

EP3221883A1 MULTIPLE BARRIER LAYER ENCAPSULATION STACK 审中-公开
标题翻译：多层屏蔽层封装堆叠
公开(公告)号：EP3221883A1
公开(公告)日：2017-09-27
申请号：EP15860832.3
申请日：2015-11-17
申请人： Sage Electrochromics, Inc.
发明人： JAIN, Avanti M. , GIRON, Jean-Christophe
IPC分类号： H01L21/56 , H01L23/28
CPC分类号： H01L23/31 , B32B27/00 , B32B27/06 , B32B2307/50 , B32B2307/7242 , B32B2307/7244 , B32B2307/7246 , B32B2307/7248 , G02F2201/501 , H01L21/02057 , H01L23/28 , H01L23/29 , H01L23/291 , H01L23/293 , H01L23/3135
摘要： A process for encapsulating an apparatus to restrict environmental element permeation between the apparatus and an external environment includes applying multiple barrier layers to the apparatus and preceding each layer application with a separate cleaning of the presently-exposed apparatus surface, resulting in an apparatus which includes an encapsulation stack, where the encapsulation stack includes a multi-layer stack of barrier layers. Each separate cleaning removes particles from the presently-exposed apparatus surface, exposing gaps in the barrier layer formed by the particles, and the subsequently-applied barrier layer at least partially fills the gaps, so that a permeation pathway through the encapsulation stack via gap spaces is restricted. The quantity of barrier layers applied to form the stack can be based on a determined probability that a stack of the particular quantity of barrier layers is independent of at least a certain quantity of continuous permeation pathways through the stack.
摘要翻译：用于封装装置以限制装置与外部环境之间的环境元素渗透的方法包括将多个阻挡层施加到装置并且在每个层应用之前通过单独清洁当前暴露的装置表面来产生包括封装堆叠，其中封装堆叠包括阻挡层的多层堆叠。每次单独的清洁从当前暴露的装置表面去除颗粒，暴露由颗粒形成的阻挡层中的间隙，并且随后施加的阻挡层至少部分地填充间隙，使得通过间隙空间穿过封装堆叠的渗透路径受到限制。用于形成叠层的阻挡层的数量可以基于确定的特定量的阻挡层的叠层独立于穿过叠层的至少一定量的连续渗透路径的可能性。

5. 发明公开

EP3168603A1 METHOD AND ARRANGEMENT FOR ANALYZING A SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT 有权转让
标题翻译：方法和系统由半导体元件制造半导体成分分析及方法
公开(公告)号：EP3168603A1
公开(公告)日：2017-05-17
申请号：EP15194108.5
申请日：2015-11-11
申请人： ams AG
发明人： Richter, Helene , Bodner, Thomas , Siegert, Jörg
IPC分类号： G01N21/64 , G01N21/95 , H01L21/66 , G02B21/00 , G01N21/91 , G01N21/94 , G01N21/88
CPC分类号： H01L22/12 , G01N21/643 , G01N21/6458 , G01N21/91 , G01N21/94 , G01N2021/646 , G01N2021/8864 , G01N2021/8877 , G02B21/00 , G02B21/0076 , H01L21/02057 , H01L21/3065 , H01L21/76898 , H01L22/10 , H01L22/24
摘要： According to the improved concept, a method for analyzing a semiconductor element (SE) comprising polymer residues (RS, RB) located on a surface of the semiconductor element (SE) is provided. The method comprises marking at least a fraction of the residues (RS, RB) by exposing the semiconductor element (SE) to a fluorescent substance and detecting the marked residues (RS, RB) by visualizing the marked residues (RS, RB) on the surface of the semiconductor element (SE) using fluorescence microscopy.
摘要翻译：。根据改进的概念，提供一种用于分析一个半导体元件，其包括聚合物残基位于所述半导体元件（SE）的表面上的方法（SE）（RS，RB）。所述方法包括由通过在可视化标记的残基（RS，RB）的半导体元件（SE）暴露于荧光物质，并检测标记的残基（RS，RB）的标记的至少残基（RS，RB）的一小部分使用荧光显微术的半导体元件（SE）的表面上。

6. 发明公开

EP3029730A4 BONDED WAFER MANUFACTURING METHOD 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜRVERKLEBTE WAFER
公开(公告)号：EP3029730A4
公开(公告)日：2017-03-29
申请号：EP14854103
申请日：2014-08-22
申请人： SHIN-ETSU HANDOTAI CO LTD
发明人： YOKOKAWA ISAO , AGA HIROJI , FUJISAWA HIROSHI
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/02057 , H01L21/30604
摘要： The present invention is a method for manufacturing a bonded wafer comprising: producing a bonded wafer having a thin-film on its base wafer by an ion implantation delamination method, and reducing a film thickness of the thin-film, wherein the step of reducing the film thickness comprises a stage of reducing the film thickness by sacrificial oxidation treatment or vapor phase etching, wherein the method for manufacturing a bonded wafer further comprises a cleaning step of cleaning the bonded wafer exposing the delamination surface just before the step of reducing the film thickness, wherein the cleaning step includes a stage of performing a wet cleaning by successively dipping the bonded wafer to plural of cleaning baths, and wherein the wet cleaning is performed without applying ultrasonic in each of the cleaning baths in the wet cleaning. The method enables to clean a bonded wafer exposing a delamination surface remaining damage of ion implantation using a cleaning line in a strict control level.
摘要翻译：本发明是一种制造键合晶片的方法，包括：通过离子注入剥离方法在其基底晶片上制造具有薄膜的键合晶片，并且减小该薄膜的膜厚度，其中，膜厚包括通过牺牲氧化处理或气相蚀刻来减小膜厚度的阶段，其中用于制造键合晶片的方法还包括清洁步骤，即在减小膜厚度的步骤之前清洁暴露剥离表面的键合晶片其中，所述清洗工序包括通过将所述贴合晶片依次浸渍于多个清洗槽来进行湿式清洗的阶段，所述湿式清洗在所述湿式清洗中的各清洗槽内不施加超声波地进行。该方法能够在严格的控制水平下使用清洁线清洁剥离表面的键合晶片，并保留离子注入的损伤。

7. 发明公开

EP3139402A1 SEMICONDUCTOR ELEMENT CLEANING LIQUID AND CLEANING METHOD 有权
标题翻译：新罕布什尔州立大学
公开(公告)号：EP3139402A1
公开(公告)日：2017-03-08
申请号：EP15786582.5
申请日：2015-04-20
申请人： Mitsubishi Gas Chemical Company, Inc.
发明人： OIE Toshiyuki , SHIMADA Kenji
IPC分类号： H01L21/304 , C11D7/06 , C11D7/18 , C11D7/32 , C11D7/50
CPC分类号： C11D11/0047 , B08B3/08 , C11D3/3947 , C11D7/06 , C11D7/10 , C11D7/105 , C11D7/12 , C11D7/3209 , C11D7/5004 , C11D7/5009 , C11D7/5013 , C11D7/5022 , H01L21/02057 , H01L21/02063 , H01L21/02071 , H01L21/304 , H01L21/3065 , H01L21/3085
摘要： The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.
摘要翻译：本发明使得可以提供一种半导体元件清洁方法，其特征在于：在具有低相对介电常数薄膜和钴，钴合金或钨中的至少一种的基板上形成硬掩模图案插头; 以及含有0.001〜20质量％的碱金属化合物，0.1-30质量％的季铵氢氧化物，0.01-60质量％的有机水溶性溶剂，0.0001-0.1质量％的过氧化氢和水随后用于半导体元件，其中使用硬掩模图案作为掩模，硬掩模，低相对介电常数膜和阻隔绝缘膜被干蚀刻，并且去除干蚀刻残留物。

8. 发明公开

EP2997122A4 COMPOSITIONS AND METHODS FOR REMOVING CERIA PARTICLES FROM A SURFACE 无效转让
标题翻译：组合物和方法用于表面去除氧化铈
公开(公告)号：EP2997122A4
公开(公告)日：2016-12-28
申请号：EP14797546
申请日：2014-05-15
申请人： ADVANCED TECH MAT INC
发明人： LIU JUN , SUN LAISHENG
IPC分类号： H01L21/3105
CPC分类号： C11D11/0047 , C11D1/008 , C11D3/0042 , C11D3/2072 , C11D3/2086 , C11D3/2096 , C11D3/30 , C11D3/33 , H01L21/02057 , H01L21/02065
摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
摘要翻译：用于从微电子器件清洁化学后机械抛光（CMP）的污染物和氧化铈粒子A去除组合物和方法具有在其上的微粒和污染物说。去除组合物包括至少一种表面活性剂。该组合物实现了高度有效去除从微电子器件的表面上的氧化铈颗粒和CMP污染物材料，而不会损害低k电介质，氮化硅，或含钨材料。

9. 发明授权

EP2584595B1 SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：碳化硅半导体器件制造方法
公开(公告)号：EP2584595B1
公开(公告)日：2016-05-04
申请号：EP11795442.0
申请日：2011-02-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： ITOH, Satomi , SHIOMI, Hiromu , NAMIKAWA, Yasuo , WADA, Keiji , SHIMAZU, Mitsuru , HIYOSHI, Toru
IPC分类号： H01L21/28 , H01L21/336 , H01L29/16
CPC分类号： H01L21/02057 , H01L21/02236 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted (S1-S3). By cleaning the first surface of the SiC semiconductor, a second surface is formed (S4). On the second surface, a Si-containing film is formed (S5). By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed (S6).

10. 发明公开

EP2997122A1 COMPOSITIONS AND METHODS FOR REMOVING CERIA PARTICLES FROM A SURFACE 无效转让
标题翻译：从表面去除龋齿颗粒的组合物和方法
公开(公告)号：EP2997122A1
公开(公告)日：2016-03-23
申请号：EP14797546.0
申请日：2014-05-15
申请人： Advanced Technology Materials, Inc.
发明人： LIU, Jun , SUN, Laisheng
IPC分类号： C11D3/26 , C11D3/00 , C11D1/00 , C09K3/14
CPC分类号： C11D11/0047 , C11D1/008 , C11D3/0042 , C11D3/2072 , C11D3/2086 , C11D3/2096 , C11D3/30 , C11D3/33 , H01L21/02057 , H01L21/02065
摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
摘要翻译：用于清洁来自其上具有所述颗粒和污染物的微电子装置的化学机械抛光（CMP）污染物和二氧化铈颗粒的去除组合物和方法。去除组合物包含至少一种表面活性剂。该组合物实现了从微电子器件表面高效除去二氧化铈颗粒和CMP污染物材料，而不损害低k电介质，氮化硅或含钨材料。

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