会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明公开
    • Integrated laser-based light source
    • 集成的基于激光的光源
    • EP0786837A2
    • 1997-07-30
    • EP97300440.1
    • 1997-01-24
    • Hewlett-Packard Company
    • Baldwin, Richard R.Yuen, Albert Y.Zhang, TaoSears, David M.Larson, Leif EricCorzine, Scott W.Ertel, John P.Holland, William D.Tan, Michael R.T.Wang, Shih-Yuan
    • H01S3/025H01L27/15H01S3/085H01S3/25H01S3/133
    • H01S5/02296H01L2224/48091H01S5/02212H01S5/02228H01S5/02284H01S5/02288H01S5/02292H01S5/026H01S5/0264H01S5/0683H01S5/183H01S5/423H01L2924/00014
    • An integrated laser-based light source (100,100A-100C,200,250,300,320,340,350,500,600,620,700,720,800,900), which generates an output light beam (119,819) having a controlled intensity, comprises a package (105) in which are mounted a laser (101, 801), a light sensor (111, 811) and a coupler (114, 314A-314D, 514, 614, 714, 814, 914). The laser has one and only one light-emitting face (e.g., 109) from which a light beam is radiated as a radiated light beam (107). The light sensor generates an electrical signal representing the intensity of light energy falling it. The coupler couples a fraction (117, 717, 917) of the radiated light beam to the light sensor, and provides the remainder of the radiated light beam as the output light beam. Since the light coupled to the light sensor by the coupler is a fraction of the radiated light beam, the electrical signal generated by the light sensor also represents the intensities of the radiated light beam and of the output light beam. A suitable control circuit (127, 827), when fed with the electrical signal generated by the light sensor, can control the laser current to hold the electrical signal generated by the light sensor to a predetermined value that corresponds to the output light beam having a predetermined intensity.
    • 产生具有受控强度的输出光束(119,819)的集成的基于激光的光源(100,100A-100C,200,250,300,320,340,350,500,600,620,700,720,800,900)包括其中安装有激光器(101,801)的封装(105),光 传感器(111,811)和耦合器(114,314A-314D,514,614,714,814,914)。 该激光器具有一个并且仅仅一个发射面(例如109),从该发射面发射光束作为辐射光束(107)。 光传感器产生表示落在其上的光能强度的电信号。 该耦合器将辐射光束的一部分(117,717,917)耦合到光传感器,并提供辐射光束的其余部分作为输出光束。 由于通过耦合器耦合到光传感器的光是辐射光束的一小部分,所以由光传感器产生的电信号也表示辐射光束和输出光束的强度。 合适的控制电路(127,827)在被馈送有由光传感器产生的电信号时可以控制激光电流以将由光传感器产生的电信号保持为预定值,该预定值对应于具有 预定强度。
    • 4. 发明公开
    • Vertical-cavity surface-emitting laser
    • 激光雷达激光共振器
    • EP0772269A1
    • 1997-05-07
    • EP96307520.5
    • 1996-10-16
    • Hewlett-Packard Company
    • Wang, Shih-YuanTan, Michael R.T.Holland, William D.Ertel, John P.Corzine, Scott W.
    • H01S3/085
    • H01S5/18355H01S5/18308H01S5/18338H01S5/18394H01S5/3054H01S5/3095H01S5/423
    • A vertical-cavity surface-emitting laser (101) that generates light having a fixed direction of polarization has a plane light-generating region (109) sandwiched between a first conductive mirror region (110) and a second conductive mirror region (108). The first conductive mirror region (110) has an opposite conductivity mode from the second conductive mirror region (108). The first conductive mirror region (110) has a remote surface (123) substantially parallel to the light-generating region (109) and an electrode (119) formed on the remote surface (123). The electrode (119) bounds a light emission port (121) from which the light is emitted in a direction (135) defining an axis. A reduced-conductivity region (115) is formed in the first conductive mirror region (110) surrounding the axis and extending from the remote surface (123) towards the light-emitting region (109) to define a core region (117) in the first conductive mirror region (110). The light emission port (121) and/or the core region (117) has first and second dimensions in orthogonal directions in a plane parallel to the light-generating region (109). The first dimension is greater than the second dimension to set the direction of polarization of the light to the direction of the first dimension. The laser is an n-drive device grown on a n+- Substrate incorporating a degeneratively doped p-n junction formed by the n+- Substrate and a p-type conductive layer.
    • 产生具有固定偏振方向的光的垂直腔表面发射激光器(101)具有夹在第一导电镜区域(110)和第二导电镜区域(108)之间的平面光产生区域(109)。 第一导电镜区域(110)具有与第二导电镜区域(108)相反的导电模式。 第一导电镜区域(110)具有基本上平行于发光区域(109)的远程表面(123)和形成在远程表面(123)上的电极(119)。 电极(119)在限定轴线的方向(135)上限定发光的发光口(121)。 在围绕轴线的第一导电镜区域(110)中形成还原导电区域(115),并且从远离表面(123)朝向发光区域(109)延伸以限定在该区域中的芯区域(117) 第一导电镜区域(110)。 光发射端口(121)和/或芯区域(117)在与发光区域(109)平行的平面中具有正交方向上的第一和第二尺寸。 第一尺寸大于第二尺寸以将光的偏振方向设置为第一尺寸的方向。 激光器是在n + - 衬底上生长的n驱动器件,其包含由n + - 衬底和p型导电层形成的退化掺杂的p-n结。
    • 5. 发明公开
    • Surface-emitting lasers
    • 表面发射激光器
    • EP0748007A2
    • 1996-12-11
    • EP96304142.1
    • 1996-06-05
    • Hewlett-Packard Company
    • Tan, Michael R.T.Wang, Shih-YuanHoung, Yu-Min
    • H01S3/085H01S3/025
    • H01S5/18308H01S5/02461H01S5/02476H01S5/0425
    • A surface-emitting laser includes optically transparent layers on a side of a DBR mirror structure (24; 44; 74) that is opposite to an optical cavity of the laser. In one embodiment, the transparent layer is a heat-conducting layer (34) that has an efficient heat transfer relationship with an opening in a top electrode (30) and with a heat-spreading layer (36). The heat-spreading layer increases the diameter of the electrode, so as to reduce the thermal impedance of the surface-emitting laser. The heat-spreading layer may be annular in shape and may have an inside diameter (38) that is less than the outside diameter of the electrode, allowing the heat-spreading layer to first overlap the electrode and then overlap the portion of the heat-conducting layer that resides on the inside portion of the electrode. In another embodiment, the optically transparent layer is positioned between the top electrode (46; 76) and the top DBR mirror structure (44; 74) of the surface-emitting laser. In this embodiment, the transparent layer is a current-spreading layer (42; 64; 68) that reduces the lateral resistance of the laser. Lateral resistance is reduced by providing a layer having a thickness of one-half of the wavelength of the light energy generated in the laser times an odd multiple greater than one. Optionally, two half-wavelength layers (64 and 66) may be formed between the electrode and the mirror structure, with the upper layer (66) being selected primarily for its electrical properties and the lower layer (64) being selected primarily for its optical properties.
    • 6. 发明公开
    • An N-drive P-common surface emitting laser fabricated on N+ substrate
    • Ein N-getriebener,P-geerdeteroberflächenemittierenderLaser hergestellt auf einem N + -Substrat
    • EP0709939A1
    • 1996-05-01
    • EP95116057.1
    • 1995-10-11
    • Hewlett-Packard Company
    • Tan, Michael R.T.Wang, Shih-YuanYuen, Albert T.
    • H01S3/085H01S3/25H01S3/19
    • H01L33/30H01L33/0016H01L33/0062H01S5/0207H01S5/0421H01S5/18305H01S5/18308H01S5/2063H01S5/3054H01S5/3095H01S5/423
    • The present invention provides a n-drive surface emitting laser (200) comprised of an active region (204;304), a first mirror region (206;306) having a first conductivity type, a second mirror region (208;308) having a second opposite conductivity type, the first (206;306) and second mirror regions (208;308) being located on opposite sides of the light generation region (209), a buffer region (210;310) having a second conductivity type, and a substrate (202;302)having a first conductivity type. In the preferred embodiment the first conductivity type is n-type, thus the present invention provides a method of forming an n-drive semiconductor laser on an n-type substrate. Contact is made to the p-type mirror region via a tunnel junction formed by degeneratively doping the areas of the substrate region and the buffer region which abut each other. The tunnel junction is reverse biased so that current is injected through the degeneratively doped p-n junction formed by the n+ substrate and the p-type conducting layer.
    • 本发明提供一种由有源区(204; 304),具有第一导电类型的第一反射镜区(206; 306)和第二反射镜区(208; 308)构成的n驱动面发射激光器(200) 第二相反导电类型,第一(206; 306)和第二镜区域(208; 308)位于光产生区域(209)的相对侧上,具有第二导电类型的缓冲区域(210; 310) 和具有第一导电类型的衬底(202; 302)。 在优选实施例中,第一导电类型是n型,因此本发明提供了在n型衬底上形成n驱动半导体激光器的方法。 通过将基片区域和相邻的缓冲区的区域进行退化掺杂而形成的隧道结,与p型反射镜区域接触。 隧道结被反向偏置,使得电流通过由n +衬底和p型导电层形成的退化掺杂的p-n结注入。
    • 7. 发明公开
    • Method for optically and thermally isolating surface emitting laser diodes
    • 过程的热和光学隔离表面发射激光二极管
    • EP0691717A1
    • 1996-01-10
    • EP95303910.4
    • 1995-06-07
    • Hewlett-Packard Company
    • Wang, Shih-YuanTan, Michael R.T.
    • H01S3/25H01S3/085
    • H01S5/423H01S5/0425H01S5/18308H01S5/18347H01S5/2081
    • A surface-emitting laser ("SEL") array (100,200,300,400) having improved optical isolation and heat conduction is constructed from a light generation layer (130,430) and first and second mirror layers (115,415,114,414) that sandwich the light generation layer (130,430). The first mirror (115,415) and second mirror (114,414) reflect light generated in the light generation layer (130,430) back toward the light generation layer (130,430). The first mirror (115,415) includes a plurality of light isolation regions (125-128,202,301,302,440), each light isolation region (125-128,202,301,302,440) extending through the first mirror. The light isolation regions (125-128,202,301,302,440) divide the light generation layer (130,430) into a plurality of light generation regions. Each light generation region corresponds to one of the SELs. Each light isolation region (125-128,202,301,302,440) is positioned to prevent light generated in one of the light generation regions from propagating into a neighbouring light generation region. In one embodiment of the present invention, the light isolation regions are constructed by providing trenches (125-128) that extend from the surface of the SEL array through the first mirror (115,415). The trenches may be filled with a light absorbing material. The trenches may also be filled with a heat conducting material thereby providing an improved heat dissipation path for heat generated by the SELs. The light isolation regions (125-128,202,301,302,440) may also be generated by ion-implanting regions between the SELs or by disordering (440) one of the mirrors in the regions between the SELs.
    • 一种表面发射激光器(“SEL”)阵列(100,200,300,400),其具有改进的光学隔离和热传导从光产生层(130.430)以及第一和第二反射镜层(115415114414)构建做三明治光产生层(130.430)。 第一反射镜(115.415)和第二反射镜(114.414)反映光产生层(130.430)产生的光向后朝向光产生层(130.430)。 第一反射镜(115.415)包括光隔离区的多个(125-128,202,301,302,440),通过第一反射镜延伸的每个光隔离区域(125-128,202,301,302,440)。 光隔离区(125-128,202,301,302,440)划分的光产生层(130.430)转换成光产生区域的复数。 每个光产生区域对应于SEL中的一个。 每个光隔离区域(125-128,202,301,302,440)被定位,以防止传播到相邻光产生区域中的光产生区域中的一个产生的光。 在本发明一个实施例中,光隔离区是通过提供沟槽(125-128)构建并通过第一反射镜(115.415)从SEL阵列的表面延伸。 沟槽可填充有吸光材料。 沟槽因此可以填充有导热材料,从而对由SEL产生的热路径中提供改进的热耗散。 光隔离区(125-128,202,301,302,440)可以因此由SEL之间或由无序化(440)在SEL之间的区域中的反射镜的一个离子注入区产生。
    • 8. 发明公开
    • System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
    • 系统和方法,用于使用本机半导体氧化物的发光器件的单片集成和光检测器
    • EP1009032A1
    • 2000-06-14
    • EP99116407.0
    • 1999-08-20
    • Hewlett-Packard Company
    • Aronson, Lewis B.Tan, Michael R.T.Corzine, Scott W.Babic, Dubravko I
    • H01L27/15H01S5/026
    • H01S5/0264H01L27/15H01S5/0425H01S5/183H01S5/2027
    • A laser and photodetector combination (100, 200, 300, 400) having a structure in which the layer of the photodetector (110, 210, 310, 410) that contacts the laser (120, 220, 320, 420) is separated from the laser by a native semiconductor oxide layer (115, 215, 315, 415) that is both insulating and has a refractive index lower than that of the laser (120, 220, 320, 420) and the photodetector (110, 210, 310, 410). This configuration results in a laser and photodetector structure (100, 200, 300, 400) that minimizes the capture of the spontaneous emission light output from the laser (120, 220, 320, 420) by the photodetector (110, 210, 310, 410) while electrically isolating the laser from the photodetector. The electrical isolation of the laser from the photodetector results in a four terminal device in which the laser and photodetector(100, 200, 300, 400) may be independently biased, and can therefore be operated at a very low bias voltage.
    • 激光器和光电检测器组合(100,200,300,400)具有在光检测器(110,210,310,410)的层没有接触所述激光器(120,220,320,420)的结构被从分离 激光由天然半导体氧化物层(115,215,315,415),既绝缘且具有折射率比所述激光器(120,220,320,420)和光电检测器(110,210,310的下部, 410)。 在一个激光器和光电检测器结构该配置的结果(100,200,300,400)做了最大限度地减少自发发射的光输出的捕获从激光器(120,220,320,420)由所述光电检测器(110,210,310, 410),而电隔离的光检测器的激光。 从在其中激光器和光电检测器(100,200,300,400)可以是unabhängig偏置,并且可以以非常低的偏置电压THEREFORE操作的四端器件的光检测器的结果,激光的电隔离。