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1. 发明公开

EP2802046A1 Light guiding for vertical external cavity surface emitting laser 有权
标题翻译： LichtführungfürVertikalresonator-Oberflächenemissionslaser
公开(公告)号：EP2802046A1
公开(公告)日：2014-11-12
申请号：EP13167055.6
申请日：2013-05-08
申请人： Camlin Technologies (Switzerland) Limited
发明人： Felder, Ferdinand , Fill, Matthias , Zogg, Hans , Debernardi, Pierluigi
IPC分类号： H01S5/183 , H01S5/32 , H01S5/04 , H01S5/14 , H01S5/42
CPC分类号： H01S5/18308 , H01S5/041 , H01S5/14 , H01S5/18344 , H01S5/18397 , H01S5/3222 , H01S5/423 , H01S5/426 , H01S2301/166 , H01S2301/176
摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighbouring region (25) that at least partly surrounds said mesa (24) has a second refractive index ( n 2 ). At least part of said mesa (24) has a first refractive index ( n 1 ) and a part of the neighbouring region (25) transversally adjacent to said part of the mesa (24) has second refractive index ( n 2 ). Said first refractive index ( n 1 ) is higher than said second refractive index ( n 2 ) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.
摘要翻译：本发明涉及一种用于垂直发射激光器件的有源增益层堆叠（21），所述有源增益层堆叠（21）包括半导体材料，其中所述半导体材料被构造成使得其形成至少一个台面（24）在垂直方向上延伸。至少部分地围绕所述台面（24）的横向相邻区域（25）具有第二折射率（n 2）。所述台面（24）的至少一部分具有第一折射率（n 1），并且与台面（24）的所述部分横向相邻的相邻区域（25）的一部分具有第二折射率（n 2）。所述第一折射率（n 1）高于所述第二折射率（n 2），并且所述台面（24）的横向方向上的直径被选择为使得所述有源增益层叠层（21）中的横向约束因子增加。本发明还涉及一种包括这种堆叠的激光装置，还涉及这种堆叠的操作方法，以及制造这种叠层的方法。 VECSEL包括在下反射镜上生长的IV-VI增益材料和外腔镜。多个台面（22）可以在单个基板（23）上生长。防引导通过周围材料（25）的较低折射率来改善单个横向模式操作来防止。

2. 发明公开

EP2690725A2 Surface emitting laser device and atomic oscillator 审中-公开
标题翻译： OberflächenemittierendeLaservorrichtung und Atomzzillator
公开(公告)号：EP2690725A2
公开(公告)日：2014-01-29
申请号：EP13176905.1
申请日：2013-07-17
申请人： Ricoh Company, Ltd.
发明人： Suzuki, Ryoichiro , Sato, Shunichi
IPC分类号： H01S5/183 , H01S5/42 , G04F5/14 , H01S5/40
CPC分类号： H01S5/423 , G04F5/14 , G04F5/145 , H01S5/0421 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/4087
摘要： A surface emitting laser device includes a substrate (101), a lower reflector (102), an active layer (104), an upper reflector (106, 113), and surface emitting lasers (11-14) configured to emit light. A second phase adjustment layer (108), a contact layer (109), a first phase adjustment layer (111), and a wavelength adjustment layer (112) are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer (108) to the midsection of the wavelength adjustment layer (112) is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer (108) to a midsection of the contact layer (109) is approximately Nλ/2. At least two of the surface emitting lasers (11-14) have the wavelength adjustment layer (112) arranged at different thicknesses and are configured to emit light with different wavelengths.
摘要翻译：表面发射激光器件包括衬底（101），下反射器（102），有源层（104），上反射器（106,113）和被配置为发光的表面发射激光器（11-14）。从有源层侧依次层叠第二相位调整层（108），接触层（109），第一相位调整层（111）和波长调整层（112）。从第二相位调整层（108）的有源层侧到波长调整层（112）的中部的总光学厚度大约为（2N + 1）×Λ/ 4，其中λ表示光的波长， N表示正整数。从第二相位调整层（108）的有源层侧到接触层（109）的中部的光学厚度大约为N»/ 2。至少两个表面发射激光器（11-14）具有布置成不同厚度的波长调节层（112），并且被配置为发射具有不同波长的光。

3. 发明授权

EP1615305B1 VCSEL or LED with resin around the central portion to lower capacitance 有权
标题翻译： VCSEL或与由树脂以减少容量包围的中心区域的LED
公开(公告)号：EP1615305B1
公开(公告)日：2007-11-07
申请号：EP05012288.6
申请日：2005-06-08
申请人： Seiko Epson Corporation
发明人： Nagawa, Michifumi , Kaneko, Tsuyoshi
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , H01L2224/18 , H01S5/0425 , H01S5/06226 , H01S5/18344 , H01S2301/176 , Y10T428/24612

4. 发明授权

EP1130720B1 SURFACE-EMISSION SEMICONDUCTOR LASER 有权
标题翻译：表面发射半导体激光器
公开(公告)号：EP1130720B1
公开(公告)日：2005-04-06
申请号：EP00931712.4
申请日：2000-06-06
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： YOKOUCHI, Noriyuki, c/o The Furukawa Elec. Co., , KASUKAWA, Akihiko, c/o The Furukawa Electric Co.,
IPC分类号： H01S5/183
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/18391 , H01S5/18394 , H01S5/3432 , H01S2301/166
摘要： A surface-emission semiconductor laser is capable of transverse-mode oscillation control. A substrate includes a laminated semiconductor structure having an emission layer arranged between an upper reflector layer and a lower reflector layer. To form a window through which laser is emitted, an opening above the upper reflector layer part is coated in part with a layer, such as dielectric film, transparent to the laser wavelength. The transverse mode of laser oscillation can be controlled by varying the two-dimensional shape of the window.
摘要翻译：面发射型半导体激光器能够进行横模振荡控制。衬底包括具有布置在上反射层和下反射层之间的发射层的叠层半导体结构。为了形成发射激光的窗口，在上反射层部分上方的开口部分地涂覆有对激光波长透明的诸如介电膜的层。激光振荡的横向模式可以通过改变窗口的二维形状来控制。

5. 发明公开

EP1130720A1 SURFACE-EMISSION SEMICONDUCTOR LASER 有权
标题翻译： OBERFLÄCHENEMITTIERENDERHALBLEITERLASER
公开(公告)号：EP1130720A1
公开(公告)日：2001-09-05
申请号：EP00931712.4
申请日：2000-06-06
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： YOKOUCHI, Noriyuki, The Furukawa Elec. Co., Ltd. , KASUKAWA, Akihiko, The Furukawa Electric Co., Ltd.
IPC分类号： H01S5/183
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/18391 , H01S5/18394 , H01S5/3432 , H01S2301/166
摘要： Disclosed is a surface emitting semiconductor laser device capable of controlling transverse modes. A layer structure of a semiconductor material having a light-emitting layer provided between an upper reflector layer structure and a lower reflector layer structure is formed on a substrate, a part of the surface of the opening portion located above the upper reflector layer structure is coated with a transparent layer transparent to the oscillation wavelength of a laser beam such as a dielectric film, thereby forming a light-emerging window for the laser beam. The transverse modes of the laser beam can be controlled by changing the planar shape of the light-emerging window.
摘要翻译：公开了能够控制横向模式的表面发射半导体激光器装置。在基板上形成具有设置在上反射器层结构和下反射器层结构之间的发光层的半导体材料的层结构，位于上反射器层结构上方的开口部分的表面的一部分被涂覆透明层对诸如电介质膜的激光束的振荡波长透明，从而形成激光束的出光窗口。可以通过改变出光窗的平面形状来控制激光束的横向模式。

6. 发明授权

EP0439929B1 Surface emission semiconductor laser with lateral electrode contact 失效
标题翻译：该表面发射半导体激光器具有横向电极接触。
公开(公告)号：EP0439929B1
公开(公告)日：1994-03-16
申请号：EP90313331.2
申请日：1990-12-07
申请人： AT&T Corp.
发明人： Luryi, Sergey , Xie, Ya-Hong
IPC分类号： H01S3/085 , H01S3/025
CPC分类号： H01S5/18344 , H01S5/0425 , H01S5/18308 , H01S5/3086

7. 发明公开

EP0473362A2 Improved distributed Bragg reflectors and devices incorporating same 失效
标题翻译： Verteilte Bragg-Reflektoren und damit ausgestattete Vorrichtungen。
公开(公告)号：EP0473362A2
公开(公告)日：1992-03-04
申请号：EP91307731.9
申请日：1991-08-22
申请人： AT&T Corp.
发明人： Blonder, Greg E. , Chandross, Edwin Arthur , Ho, Seng-Tiong , McCall, Samuel L. , Slusher, Richart E. , West, Kenneth W.
IPC分类号： G02B5/28 , H01L33/00 , H01S3/085
CPC分类号： H01L33/465 , G02B6/122 , H01L33/0062 , H01L33/105 , H01S5/18341 , H01S5/18344 , H01S5/18361 , H01S5/2081 , Y10S148/05 , Y10S148/095
摘要： Distributed Bragg Reflectors (24,25) of high efficacy based on alternating layers (26,27) of large difference in refractive index are fabricated by epitaxial growth followed by etchant removal and back-filling to produce a structure in which alternation is between layers of retained epitaxially grown material and layers of back-filled material. Such reflectors may serve simply as mirrors or may be incorporated in a variety of devices including lasers, LEDs, detectors, optical switches in which the DBRs serve e.g. for cavitation.
摘要翻译：基于具有大的折射率差异的交替层（26,27）的高效率分布布拉格反射器（24,25）通过外延生长，随后进行蚀刻剂去除和反向填充来制造，以产生在层间交替的结构保留的外延生长材料和后填充材料层。这样的反射器可以简单地用作反射镜，或者可以并入多种设备，包括激光器，LED，检测器，其中DBR用于其中的光学开关。用于空化。

8. 发明授权

EP2786457B1 SURFACE-EMITTING LASER ELEMENT, METHOD FOR MANUFACTURING A SURFACE-EMITTING LASER ELEMENT, AND ATOMIC OSCILLATOR 有权
公开(公告)号：EP2786457B1
公开(公告)日：2018-09-19
申请号：EP12854434.3
申请日：2012-11-29
申请人： Ricoh Company, Ltd.
发明人： SUZUKI, Ryoichiro , SATO, Shunichi
IPC分类号： H01S5/183 , H03L7/26 , H01S5/042 , H01S5/40 , H01S5/42 , B82Y20/00 , G04F5/14 , H01S5/026 , H01S5/20 , H01S5/343
CPC分类号： H01S5/187 , B82Y20/00 , G04F5/145 , H01S5/026 , H01S5/0421 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/18358 , H01S5/18369 , H01S5/2086 , H01S5/3407 , H01S5/34313 , H01S5/34373 , H01S5/4087 , H01S5/42 , H01S5/423 , H01S2301/166 , H01S2301/176 , H03B17/00 , H03L7/26
摘要： Disclosed is a surface-emitting laser element including a semiconductor substrate and plural surface-emitting lasers configured to emit light mutually different wavelengths, each surface-emitting laser including a lower Bragg reflector provided on the semiconductor substrate, a resonator provided on the lower Bragg reflector, an upper Bragg reflector provided on the resonator, and a wavelength adjustment layer provided in the upper Bragg reflector or lower Bragg reflector, the wavelength adjustment layers included in the surface-emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two kinds of materials, and numbers of the adjustment layers included in the wavelength adjustment layers being mutually different.

9. 发明公开

EP2808958A3 Surface-Emitting Laser Element and Atomic Oscillator 审中-公开
标题翻译： Oberflächenemittierendes激光元件和原子振荡器
公开(公告)号：EP2808958A3
公开(公告)日：2015-05-20
申请号：EP14170377.7
申请日：2014-05-28
申请人： Ricoh Company Ltd.
发明人： Suzuki, Ryoichiro , Sato, Shunichi
IPC分类号： H01S5/183 , H01S5/40 , H01S5/42 , H03L7/26 , H01S5/042 , G04F5/14 , H01S5/026 , H01S5/343 , H01S5/20
CPC分类号： H01S5/423 , G04F5/145 , H01S5/026 , H01S5/0421 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/187 , H01S5/2086 , H01S5/3013 , H01S5/323 , H01S5/34313 , H01S5/34373 , H01S5/4087 , H01S2301/166 , H01S2301/176 , H03L7/26
摘要： A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.

10. 发明公开

EP2808958A2 Surface-Emitting Laser Element and Atomic Oscillator 审中-公开
标题翻译： OberflächenemittierendesLaserelement und Atomzzillator
公开(公告)号：EP2808958A2
公开(公告)日：2014-12-03
申请号：EP14170377.7
申请日：2014-05-28
申请人： Ricoh Company Ltd.
发明人： Suzuki, Ryoichiro , Sato, Shunichi
IPC分类号： H01S5/183 , H01S5/40 , H01S5/42 , G04F5/14 , H01S5/026 , H01S5/343
CPC分类号： H01S5/423 , G04F5/145 , H01S5/026 , H01S5/0421 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/187 , H01S5/2086 , H01S5/3013 , H01S5/323 , H01S5/34313 , H01S5/34373 , H01S5/4087 , H01S2301/166 , H01S2301/176 , H03L7/26
摘要： A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.
摘要翻译：表面发射激光元件包括设置在基板上的多个表面发射激光器。多个表面发射激光器中的每一个包括设置在基板上的第一反射镜; 设置在所述第一反射镜上的有源层; 设置在有源层上的波长调整区域; 以及设置在波长调整区域上的第二反射镜。波长调整区域包括设置在相位调整层上的相位调整层和波长调整层。波长调整区域的厚度大约是发射光的波长除以4的奇数倍。相位调整层的厚度大致是发射光的波长除以4的偶数倍。波长调整层的厚度与其他表面发射激光器中的至少一个的波长调节层的厚度不同。

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