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1. 发明公开

EP4420171A1 N-POLAR III-NITRIDE NANOWIRE-BASED LED DEVICES 审中-实审
公开(公告)号：EP4420171A1
公开(公告)日：2024-08-28
申请号：EP22884561.6
申请日：2022-10-24
申请人： The Regents Of The University Of Michigan
发明人： MALHOTRA, Yakshita , PANDEY, Ayush , MI, Zetian
IPC分类号： H01L33/06 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , B82Y20/00
CPC分类号： B82Y20/00 , H01L33/18 , H01L33/32 , H01L33/007 , H01L33/08 , H01L33/20

2. 发明公开

EP4411842A1 FULL SPECTRUM WHITE LIGHT EMITTING DEVICES 审中-公开
公开(公告)号：EP4411842A1
公开(公告)日：2024-08-07
申请号：EP24155881.6
申请日：2024-02-05
申请人： Bridgelux, Inc.
发明人： LI, Yi-Qun , YUAN, Xianglong , ZHAO, Jun-Gang
IPC分类号： H01L33/06 , H01L33/50 , H01L33/60
CPC分类号： H01L33/06 , H01L33/507 , H01L33/60
摘要： There is provided a white light emitting device comprising: a chip scale packaged broadband LED flip chip for generating broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN LED chip having an active region for directly generating blue light emissions of at least three different wavelengths using different quantum wells in a multiple-quantum well (MQW) structure, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material for generating light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material for generating light with a peak emission wavelength from 600 nm to 680 nm.

3. 发明公开

EP4369425A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-实审
公开(公告)号：EP4369425A1
公开(公告)日：2024-05-15
申请号：EP22837593.7
申请日：2022-06-30
申请人： KOITO MANUFACTURING CO., LTD.
发明人： KANAOKA, Hiroaki , NOMURA, Akihiro
IPC分类号： H01L33/08 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/24 , H01L33/32
CPC分类号： H01L33/06 , H01L33/08 , H01L33/32 , H01L33/10 , H01L33/24 , H01L33/22
摘要： A semiconductor light emitting element (10) includes a growth substrate (11), a plurality of columnar semiconductor layers (14 to 16) on the growth substrate (11), and an embedded layer (18) formed to cover the columnar semiconductor layer (14 to 16), in which a side surface reflection portion (17) configured to reflect at least a part of light emitted from the columnar semiconductor layer (14 to 16) is provided on a side surface of the columnar semiconductor layer (14 to 16).

4. 发明公开

EP4362114A1 MULTI-BAND LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP4362114A1
公开(公告)日：2024-05-01
申请号：EP22833662.4
申请日：2022-06-30
申请人： Seoul Viosys Co., Ltd.
发明人： MIN, Dae Hong , BAEK, Yong Hyun , KANG, Ji Hun
IPC分类号： H01L33/12 , H01L33/32 , H01L33/22 , H01L33/06 , H01L33/02
CPC分类号： H01L33/24 , H01L33/32 , H01L33/12 , H01L33/06
摘要： Provided is a multi-band light emitting diode. A light emitting diode according to one embodiment comprises: a first conductivity-type semiconductor layer; a V-pit generation layer which is located on the first conductivity-type semiconductor layer and has a first V-pit of a first entrance width; a stress relief layer which is located on the V-pit generation layer and provides a second V-pit of a second entrance width on the first V-pit, the second entrance width being greater than the first entrance width of the V-pit; an active layer located on the stress relief layer, the active layer including a first active layer region formed on a planar surface of the stress relief layer and a second active layer region formed in the second V-pit; and a second conductivity-type semiconductor layer disposed on the active layer.

5. 发明公开

EP4358163A1 LIGHT-EMITTING DIODE AND SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4358163A1
公开(公告)日：2024-04-24
申请号：EP21945803.1
申请日：2021-12-15
申请人： Huaian Aucksun Optoelectronics Technology Co., Ltd
发明人： SONG, Changwei , HUANG, Licheng , GUO, Yuan , ZHAN, Wang , CHENG, Chih-Ching , LU, Ling
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14
CPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/145 , H01L33/46 , H01L33/60
摘要： The present disclosure provides a light-emitting diode and a semiconductor device. The light-emitting diode comprises: a substrate; and a buffer layer, an N-type gallium nitride layer, a light-emitting region buffer layer, a first light-emitting layer, a second light-emitting layer, an electron blocking layer, and a P-type gallium nitride layer that are epitaxially grown on the substrate in sequence, wherein: the second light-emitting layer comprises one or more light-emitting well-barrier pair sub-layers; the thickness of the light-emitting region buffer layer is a preset first multiple of the thickness of the light-emitting well-barrier pair sub-layer; the thickness of the first light-emitting layer is a preset second multiple of the thickness of the light-emitting well-barrier pair sub-layer, the second multiple being less than the first multiple; and the thickness of the electron blocking layer is a preset third multiple of the thickness of the light-emitting well-barrier sub-layer, the third multiple being less than the first multiple. The internal luminous efficiency of the light-emitting diode is improved.

6. 发明公开

EP4350786A1 LIGHT EMITTING ELEMENT AND METHOD OF FABRICATING LIGHT EMITTING ELEMENT 审中-实审
公开(公告)号：EP4350786A1
公开(公告)日：2024-04-10
申请号：EP23185626.1
申请日：2023-07-14
申请人： Samsung Display Co., Ltd.
发明人： LEE, Seung A , PARK, Bong Chun , LEE, Kwan Jae , LEE, Dong Eon , LEE, So Young
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/20 , H01L33/30
摘要： A light emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and an insulating layer enclosing the first semiconductor layer, the active layer, and at least a portion of the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are successively disposed in a first direction. The active layer includes a first barrier layer, a second barrier layer, and a first well layer disposed between the first barrier layer and the second barrier layer, and including a non-uniform indium composition ratio in a first direction and a second direction intersecting the first direction, and including a non-uniform indium density in a third direction intersecting the first direction and the second direction.

7. 发明公开

EP4343863A1 LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT 审中-实审
公开(公告)号：EP4343863A1
公开(公告)日：2024-03-27
申请号：EP23177182.5
申请日：2023-06-05
申请人： Samsung Display Co., Ltd.
发明人： JEON, Sang Ho , CHAE, Ji Song
IPC分类号： H01L33/00 , H01L33/06 , H01L33/28 , H01L33/32 , H01L25/075
摘要： A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.

8. 发明公开

EP4216291A1 LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME 审中-实审
公开(公告)号：EP4216291A1
公开(公告)日：2023-07-26
申请号：EP23151908.3
申请日：2023-01-17
申请人： Nichia Corporation
发明人： ASADA, Koji , OKADA, Takuya
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01L33/04 , H01L33/24
摘要： A light emitting element (1) comprises a semiconductor structure (100) which includes an n-side layer (20 = 21, 22), a p-side layer (50), and an ultraviolet light emitting active layer (30) positioned between the n-side layer (20) and the p-side layer (50), each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer (60), and a p-electrode (70) electrically connected to the p-side layer (50). The active layer (30) has a well layer (31) containing Al, a barrier layer (32) containing Al, and holes (33) defined by the lateral faces of the well layer (31) and the lateral faces of the barrier layer (32). The p-side layer (50) has a first layer (51) containing Al, a second layer (52) containing Al disposed on the first layer (51) and in contact with the lateral faces of the well layer (31), and a third layer (53) disposed on the second layer (52). The third layer (53) is smaller in thickness than the first layer (51). The Al composition ratio difference between the second layer (52) and the well layer (31) is 10% or less, and the third layer (53) has a lower Al composition ratio than the Al composition ratio of the second layer (52) or contains no Al. The p-electrode (70) is disposed on the third layer (53).

9. 发明公开

EP4173045A1 DISPOSITIF OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION CORRESPONDANT 审中-实审
公开(公告)号：EP4173045A1
公开(公告)日：2023-05-03
申请号：EP21736610.3
申请日：2021-06-29
申请人： Aledia
发明人： AMSTATT, Benoît , TCHOULFIAN, Pierre , NAPIERALA, Jérôme
IPC分类号： H01L27/15 , H01L33/00 , H01L33/18 , H01L33/32 , H01L33/06 , H01L33/08 , H01L33/10

10. 发明公开

EP4166626A1 QUANTUM DOT LED DESIGN BASED ON RESONANT ENERGY TRANSFER 审中-实审转让
公开(公告)号：EP4166626A1
公开(公告)日：2023-04-19
申请号：EP22212652.6
申请日：2019-05-09
申请人： Nanosys, Inc.
发明人： DOHNER, Emma Rose , CHOW, Yeewah Annie , IPPEN, Christian Justus , TILLMAN, Jason Travis , TRUSKIER, Jonathan Andrew , GUO, Wenzhuo
IPC分类号： C09K11/02 , C09K11/70 , C09K11/62 , C09K11/88 , H01B1/08 , H01L33/06 , H10K50/115
摘要： Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

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