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1. 发明公开

EP1120872A4 SEMICONDUCTOR LASER 有权
标题翻译： HALBLEITERLASER
公开(公告)号：EP1120872A4
公开(公告)日：2005-09-21
申请号：EP99943254
申请日：1999-09-09
申请人： SHARP KK
发明人： TANEYA MOTOTAKA , TAKATANI KUNIHIRO , OHMI SUSUMU
IPC分类号： H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAl semiconductor laser comprising a first layer of first conductivity type, an active layer whose forbidden band width is narrower than that of the first layer, and a second layer of second conductivity type whose forbidden band width is wider than that of the active layer, wherein the second layer has a planar portion and a stripelike projection structure, a stripelike optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripelike projection structure, a current-constricting layer of the first conductivity type or of a high resistance covering the top of the planar portion of the second layer, the side of the projection structure of the second layer, and the side of the optical waveguide is formed, and the difference between the thermal expansion coefficient of the current constricting layer and that of the second layer is in the range of -4x10-9/°C to +4x10-9/°C.
摘要翻译：一种InGaAl半导体激光器，其特征在于，具有第一导电型的第一层，禁带宽度比第一层窄的有源层，禁带宽度比有源层宽的第二导电型的第二层，其中所述第二层具有平面部分和条状突出结构，在所述条状突出结构上形成折射率大于所述第二层的第二导电类型的条状光波导形成层，电流约束层形成覆盖第二层的平面部分的顶部，第二层的投影结构的侧面和光波导的侧面的第一导电类型或高电阻，并且热膨胀系数目前的收缩层的厚度和第二层的收缩率在-4×10-9 /℃至+ 4×10-9 /℃的范围内。

2. 发明公开

EP0971465A4 COMPOUND SEMICONDUCTOR LASER 失效
标题翻译： HOCHLEISTUNGSDICHTES HALBLEITERLASER
公开(公告)号：EP0971465A4
公开(公告)日：2000-09-13
申请号：EP98910983
申请日：1998-03-25
申请人： SHARP KK
发明人： TAKATANI KUNIHIRO
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser made of a III nitride semiconductor, comprising a first clad layer (104) of first conductivity type on a substrate (101), an active layer (106) on the first clad layer, a second clad layer (108) of second conductivity type on the active layer (106), and a buried layer (110) formed on the second clad layer (108) and having an aperture for constricting a current into a selected region in the active layer. The second clad layer (108) has a ridge portion on an upper part thereof, and the ridge portion is located inside the aperture of the buried layer (110). The buried layer (110) does not substantially absorb a light emitted from the active layer (106) and has a refractive index of substantially the same as that of the second clad layer (108).
摘要翻译：激光由III族氮化物半导体构成，其具有在基板（101）上的第一导电类型的第一覆盖层（104），在第一覆盖层上的有源层（106），第二导电性的第二覆盖层（108）在所述有源层上形成的掩模层和形成在所述第二覆盖层上的掩埋层（11），所述掩埋层具有将所述电流限制在所述有源层中的选定区域中的孔径。第二覆层具有位于掩埋层的孔内的脊，其中掩埋层基本上不吸收从有源层发射的光，其折射率基本上与第二层的折射率相同。

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