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1. 发明公开

EP3400613A1 ELECTROSTATIC DISCHARGE GUARD STRUCTURE 有权
公开(公告)号：EP3400613A1
公开(公告)日：2018-11-14
申请号：EP16901001.4
申请日：2016-10-27
申请人： Huawei Technologies Co., Ltd.
发明人： CELO, Dritan , GOODWILL, Dominic John , BERNIER, Eric
IPC分类号： H01L31/02 , H01L31/075
CPC分类号： H01L27/1443 , G02B6/00 , G02B6/122 , G02B2006/121 , G02B2006/12123 , G02B2006/12145 , H01L27/0248 , H01L27/14643 , H01L27/14647 , H01L27/14652 , H01L31/02019 , H01L31/02325 , H01L31/105
摘要： The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.

2. 发明授权

EP2955759B1 Semiconductor device comprising an emitter of radiation and a photosensor and appertaining production method 有权转让
公开(公告)号：EP2955759B1
公开(公告)日：2018-09-05
申请号：EP14171940.1
申请日：2014-06-11
申请人： ams AG
发明人： Minixhofer, Rainer , Stering, Bernhard , Etschmaier, Harald
IPC分类号： H01L31/0203 , H01L31/12 , H01L27/146
CPC分类号： H01L31/02164 , H01L27/14678 , H01L31/02005 , H01L31/02019 , H01L31/0203 , H01L31/02325 , H01L31/153 , H01L31/167 , H01L31/1876 , H01L2224/05022 , H01L2224/05572 , H01L2224/13082 , H01L2224/13111 , H01L2224/16145 , H01L2224/16237 , H01L2224/48145 , H01L2224/48228 , H01L2224/73265 , H01L2924/00014 , H01L2224/32145 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

3. 发明公开

EP3316296A1 PRE-CONDITIONED SELF-DESTRUCTING SUBSTRATE 审中-实审
标题翻译：预处理的自毁基质
公开(公告)号：EP3316296A1
公开(公告)日：2018-05-02
申请号：EP17194476.2
申请日：2017-10-02
申请人： Palo Alto Research Center Incorporated
发明人： CHUA, Christopher L. , CHANG, Norine , WHITING, Gregory
IPC分类号： H01L23/58 , H05K1/02
CPC分类号： H01L23/573 , H01L23/5256 , H01L23/57 , H01L31/02019 , H01L31/105 , H03K17/94 , H05K1/0275
摘要： A self-destructing device (100) includes a frangible substrate (110) having at least one pre-weakened area (111). A heater (120) is thermally coupled to the frangible substrate proximate to or at the pre-weakened area. When activated, the heater generates heat sufficient to initiate self-destruction of the frangible substrate by fractures that propagate from the pre-weakened area and cause the frangible substrate to break into many pieces.
摘要翻译：自毁设备（100）包括具有至少一个预弱化区域（111）的易碎基板（110）。加热器（120）在靠近预弱化区域处或在预弱化区域处热耦合到易碎基底。当激活时，加热器产生的热量足以通过从预先弱化区域传播的裂缝引发易碎衬底的自毁，并使易碎衬底破碎成许多块。

4. 发明公开

EP3144982A1 SKALIERBARE SPANNUNGSQUELLE 有权
公开(公告)号：EP3144982A1
公开(公告)日：2017-03-22
申请号：EP16001926.1
申请日：2016-09-02
申请人： AZUR SPACE Solar Power GmbH
发明人： Fuhrmann, Daniel , Khorenko, Victor , Guter, Wolfgang
IPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0304 , H01L31/02
CPC分类号： H01L29/88 , H01L29/205 , H01L31/02019 , H01L31/03046 , H01L31/0687 , H01L31/0693 , Y02E10/544
摘要： Skalierbare Spannungsquelle aufweisend eine Anzahl N zueinander in Serie geschalteten als Halbleiterdioden ausgebildete Teilspannungsquellen, wobei jede der Teilspannungsquellen eine Halbleiterdiode einen p-n Übergang aufweist, und jede Halbleiterdiode eine p-dotierte Absorptionsschicht aufweist, wobei die p-Absorptionsschicht von einer p-dotierten Passivierungsschicht mit einer größeren Bandlücke als die Bandlücke der p-Absorptionsschicht passiviert ist und die Halbleiterdiode eine n-Absorptionsschicht aufweist, wobei die n-Absorptionsschicht von einer n-dotierten Passivierungsschicht mit einer größeren Bandlücke als die Bandlücke der n-Absorptionsschicht passiviert ist, und die Teilquellenspannungen der einzelnen Teilspannungsquellen zueinander einer Abweichung kleiner als 20% aufweisen, und zwischen jeweils zwei aufeinanderfolgenden Teilspannungsquellen eine Tunneldiode ausgebildet ist, wobei die Tunneldiode mehrere Halbleiterschichten mit einer höheren Bandlücke als die Bandlücke der p / n Absorptionsschichten aufweist und die Halbleiterschichten mit der höheren Bandlücke jeweils aus einem Material mit geänderter Stöchiometrie und / oder anderer Elementzusammensetzung als die p / n -Absorptionsschichten der Halbleiterdiode bestehen, und die Teilspannungsquellen und die Tunneldioden zusammen monolithisch integriert sind, und gemeinsam einen ersten Stapel mit einer Oberseite und einer Unterseite ausbilden, und die Anzahl N der Teilspannungsquellen größer gleich zwei ist, und das Licht an der Oberseite auf den Stapel auftrifft und die Größe der Beleuchtungsfläche an der Stapeloberseite im Wesentlichen der Größe der Fläche des Stapels an der Oberseite ist, und der erste Stapel eine Gesamtdicke kleiner als 12µm aufweist, und bei 300 K der erste Stapel eine Quellenspannung von größer als 2,2 Volt aufweist, sofern der erste Stapel mit einem Photonenstrom mit einer bestimmten Wellenlänge bestrahlt ist, und wobei in Lichteinfallsrichtung von der Oberseite des Stapels hin zu der Unterseite des Stapels die Gesamtdicke der p und n -Absorptionsschichten einer Halbleiterdiode von der obersten Diode hin zu der untersten Diode zunimmt.
摘要翻译：具有N个部分电压源的可伸缩电压源，其被实现为串联连接的半导体二极管，其中每个部分电压源具有具有p-n结的半导体二极管。隧道二极管形成在连续的部分电压对之间，其中隧道二极管具有多个具有比p / n吸收层的带隙大的带隙的半导体层，并且具有较大带隙的半导体层各自由具有比半导体二极管的p / n吸收层具有改进的化学计量和/或不同元素组成的材料。部分电压源和隧道二极管单片集成在一起，共同形成具有顶部和底部的第一堆叠，并且部分电压源的数量N大于或等于2。

5. 发明公开

EP3000134A2 MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES 有权
标题翻译：显微结构增强吸收式光敏器件
公开(公告)号：EP3000134A2
公开(公告)日：2016-03-30
申请号：EP14801543.1
申请日：2014-05-22
申请人： Wang, Shih-Yuan , Wang, Shih-Ping
发明人： Wang, Shih-Yuan , Wang, Shih-Ping
IPC分类号： H01L31/02 , H01L31/0352 , H01L31/07
CPC分类号： H01L31/035272 , G02B6/122 , G02B2006/12097 , H01L23/66 , H01L31/02005 , H01L31/02019 , H01L31/022408 , H01L31/02327 , H01L31/02363 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/03046 , H01L31/035227 , H01L31/054 , H01L31/0745 , H01L31/075 , H01L31/1055 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/184 , H01L31/1844 , H01L2223/6627 , Y02E10/52 , Y02E10/548
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
摘要翻译：描述了使用微结构增强半导体中光子吸收的技术。微结构，例如柱和/或孔，有效地增加了有效吸收长度，导致光子更大的吸收。使用微结构来增强硅光电二极管和硅雪崩光电二极管的吸收能力，可以使波长为850纳米的光子的带宽超过10 Gb / s，并且量子效率可达90％或更高。

6. 发明公开

EP2875321A1 SOLID-STATE PHOTODETECTOR WITH VARIABLE SPECTRAL RESPONSE 审中-公开
标题翻译： FESTKÖRPER-FOTODETEKTOR MIT VARIABLER SPEKTRALER REAKING
公开(公告)号：EP2875321A1
公开(公告)日：2015-05-27
申请号：EP13819612.6
申请日：2013-07-17
申请人： Microsemi Corporation
发明人： MCNUTT, Michael, J.
IPC分类号： G01J3/00 , G01J3/02
CPC分类号： G01J3/50 , G01N21/55 , H01L27/144 , H01L27/1443 , H01L27/14647 , H01L31/02019 , H01L31/103
摘要： A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.
摘要翻译：具有可变光谱响应的固态光电探测器，可产生入射光的窄或宽响应谱。一些实施例包括固态器件结构，其包括共享公共阳极区域的第一光电二极管和第二光电二极管。施加到第一光电二极管和/或第二光电二极管的偏压可用于控制光电二极管和/或公共阳极区域的耗尽区的厚度，以改变光电检测器的光谱响应。可以基于公共阳极区域的多个触点和/或耗尽区域的电容之间的电阻来控制耗尽区域和/或公共阳极区域的厚度。实施例包括使用可变光谱响应光电检测器来确定入射光的光谱特性的控制电路和方法。

7. 发明公开

EP2337074A2 Improvements in or relating to compact fluorescent lamps 审中-公开
标题翻译：在Zusammenhang mit kompakten Fluoreszenzlampen的Verbesserungen von oder
公开(公告)号：EP2337074A2
公开(公告)日：2011-06-22
申请号：EP10194843.8
申请日：2010-12-14
申请人： STMicroelectronics (Research & Development) Limited
发明人： Raynor, Jeffrey M
IPC分类号： H01L27/144 , H01L31/02 , H01L31/14 , H01J61/32
CPC分类号： H01L31/02019 , H01J61/56 , H01J61/70 , H01L27/1446 , H01L31/02162 , H01L31/103 , H01L31/1032 , H01L31/145 , Y02B20/19
摘要： An ambient light sensor integrated in a compact fluorescent lamp (100) comprising a controller (120) and a radiation source (130), wherein the ambient light sensor comprises: a radiation receiver (112) to receive (150) and filter (140) incident radiation to obtain a value of the level of infrared radiation; an electronic module (114) to determine if the value is above a predetermined reference threshold value in order to enable the controller to switch the state of the radiation source.
摘要翻译：集成在紧凑型荧光灯（100）中的环境光传感器包括控制器（120）和辐射源（130），其中环境光传感器包括：辐射接收器（112），用于接收（150）和滤波器（140）入射辐射获得红外辐射水平值; 电子模块（114），用于确定该值是否高于预定的参考阈值，以使得控制器能够切换辐射源的状态。

8. 发明公开

EP1197735A4 PHOTODETECTOR 有权
标题翻译： PHOTODETEKTOR
公开(公告)号：EP1197735A4
公开(公告)日：2005-12-28
申请号：EP00921071
申请日：2000-04-27
申请人： HAMAMATSU PHOTONICS KK
发明人： MIZUNO SEIICHIRO
IPC分类号： H01L31/10 , G01J1/44 , G01J1/46 , H01L27/146 , H01L31/02 , G01C3/06 , G03B3/00 , H04N5/335
CPC分类号： H04N5/335 , G01J1/46 , H01L31/02019 , H04N5/243 , H04N5/3575 , H04N5/374 , H04N5/378
摘要： A photodiode (PD) produces signal current output corresponding to the amount of received light. An integrator circuit (10) stores a charge corresponding to the signal current and produces a signal voltage corresponding to the amount of the stored charge. In a CDS circuit (20), the signal voltage from the integrator circuit (10) is applied to a capacitor (C21), and a charge corresponding to the amount of the change of the applied voltage is stored in one selected from capacitors (C22, C23) by switches (SW21 to SW23). A differential amplifier (30) determines the difference in charge stored in the capacitors (C22, C23) of the CDS circuit (20), and produces a signal voltage corresponding to the difference.
摘要翻译：通过光电二极管PD输出与入射光强度对应的电信号电流，根据该电信号电流将电荷积分在积分电路10中，并输出与该电荷积分相对应的信号电压。在CDS电路20中，由积分电路10输出的信号电压输入到电容器C21，并且与输入信号电压的变化量对应的电荷被积分在由开关SW21-1选择的电容器C22或C23中， SW23。在差分计算电路30中，确定分别由电容器C22和C23或CDS电路20积分的电荷的差分，并输出与该差分相对应的信号电压。

9. 发明公开

EP1317789A1 LARGE CURRENT WATCHDOG CIRCUIT FOR A PHOTODETECTOR 审中-公开
标题翻译：光电探测器的大电流看门狗电路
公开(公告)号：EP1317789A1
公开(公告)日：2003-06-11
申请号：EP01968796.1
申请日：2001-09-12
申请人： PerkinElmer, Inc.
发明人： DESCHAMPS, Pierre, D. , TROTTIER, Claude, J.
IPC分类号： H02H3/00 , H02H9/00
CPC分类号： H01J43/30 , H01J40/14 , H01L31/02019 , H03G11/00
摘要： A large current watchdog circuit for a photodetector (12), the circuit including a current sensing device (52) responsive to current flowing through the photodetector (12), and a variable impedance transistor (50) responsive to the current sensing device and the photodetector (12) which increases in resistance in response to current flowing through the photodetector (12) to protect the photodetector and any front end sensing electronics (16) from high current levels.
摘要翻译：一种用于光电检测器（12）的大电流监视器电路，该电路包括响应于流过光电检测器（12）的电流的电流感测装置（52）以及响应于电流感测装置和光电检测器（12）的可变阻抗晶体管（50）（12），其响应于流经光电检测器（12）的电流而增加电阻，以保护光电检测器和任何前端感测电子器件（16）免受高电流电平的影响。

10. 发明公开

EP1197735A1 PHOTODETECTOR 有权
标题翻译：光电探测器
公开(公告)号：EP1197735A1
公开(公告)日：2002-04-17
申请号：EP00921071.7
申请日：2000-04-27
申请人： Hamamatsu Photonics K.K.
发明人： Mizuno, Seiichiro, Hamamatsu Photonics K.K.
IPC分类号： G01J1/44 , H01L31/10 , G01C3/06 , H04N5/335 , G03B3/00
CPC分类号： H04N5/335 , G01J1/46 , H01L31/02019 , H04N5/243 , H04N5/3575 , H04N5/374 , H04N5/378
摘要： An electric signal current corresponding to the intensity of the incident light is output by a photodiode PD, electric charge is integrated in an integrating circuit 10 according to this electric signal current, and a signal voltage corresponding to this quantity of electric charge thus integrated is output. In a CDS circuit 20, the signal voltage output by the integrating circuit 10 is input to the capacitor C 21 , and an electric charge corresponding to the amount of change in the input signal voltage is integrated in the capacitor C 22 or C 23 selected by switches SW21 - SW23. In the differential calculating circuit 30, the differential in the electric charges integrated respectively by the capacitors C 22 and C 23 of the CDS circuit 20 is determined, and a signal voltage corresponding to this differential is output.
摘要翻译：通过光电二极管PD输出与入射光的强度对应的电信号电流，根据该电信号电流将电荷积分在积分电路10中，输出与该积分后的电荷量对应的信号电压。在CDS电路20中，由积分电路10输出的信号电压被输入到电容器C21，并且与由输入信号电压的变化量相对应的电荷被积分在由开关SW21〜SW21选择的电容器C22或C23中， SW23。在差分计算电路30中，确定分别由CDS电路20的电容器C22和C23积分的电荷的差分，并且输出与该差分对应的信号电压。

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